HK1179048A1 - 有機矽樹脂製反射基材及其製造方法、以及用於該反射基材的原材料組合物 - Google Patents

有機矽樹脂製反射基材及其製造方法、以及用於該反射基材的原材料組合物

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Publication number
HK1179048A1
HK1179048A1 HK13106030.4A HK13106030A HK1179048A1 HK 1179048 A1 HK1179048 A1 HK 1179048A1 HK 13106030 A HK13106030 A HK 13106030A HK 1179048 A1 HK1179048 A1 HK 1179048A1
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HK
Hong Kong
Prior art keywords
reflective substrate
manufacturing
base material
same
silicone resin
Prior art date
Application number
HK13106030.4A
Other languages
English (en)
Inventor
田崎益次
五十嵐直人
市川明
小田喜勉
吉田舞美
Original Assignee
株式會社朝日橡膠
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Application filed by 株式會社朝日橡膠 filed Critical 株式會社朝日橡膠
Publication of HK1179048A1 publication Critical patent/HK1179048A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/61—Additives non-macromolecular inorganic
    • C09D7/62—Additives non-macromolecular inorganic modified by treatment with other compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/001—Combinations of extrusion moulding with other shaping operations
    • B29C48/002—Combinations of extrusion moulding with other shaping operations combined with surface shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
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    • B29C48/001—Combinations of extrusion moulding with other shaping operations
    • B29C48/0022—Combinations of extrusion moulding with other shaping operations combined with cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/04—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
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    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
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    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/004—Reflecting paints; Signal paints
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    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Optical Elements (AREA)
HK13106030.4A 2010-03-23 2013-05-21 有機矽樹脂製反射基材及其製造方法、以及用於該反射基材的原材料組合物 HK1179048A1 (zh)

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Families Citing this family (169)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101713087B1 (ko) * 2010-02-19 2017-03-07 도레이 카부시키가이샤 형광체 함유 실리콘 경화물, 그 제조 방법, 형광체 함유 실리콘 조성물, 그 조성물 전구체, 시트상 성형물, ｌｅｄ 패키지, 발광 장치 및 ｌｅｄ 실장 기판의 제조 방법
CN103328575A (zh) * 2010-12-08 2013-09-25 道康宁公司 适合形成封装物的包含二氧化钛纳米粒子的硅氧烷组合物
MY175544A (en) 2010-12-13 2020-07-01 Toray Industries Phosphor sheet, led and light emitting device using the same and method for manufacturing led
US9232634B2 (en) 2011-01-17 2016-01-05 Canon Components, Inc. Flexible circuit board for mounting light emitting element, illumination apparatus, and vehicle lighting apparatus
JP2013157592A (ja) * 2012-01-05 2013-08-15 Canon Components Inc 発光素子実装用フレキシブル回路基板
JP5274586B2 (ja) 2011-01-17 2013-08-28 キヤノン・コンポーネンツ株式会社 フレキシブル回路基板
GB2491209B (en) * 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
JP5764423B2 (ja) * 2011-08-02 2015-08-19 日東電工株式会社 光半導体装置用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレームまたは光半導体装置用基板、ならびに光半導体装置
JP5897862B2 (ja) * 2011-10-13 2016-04-06 シチズン電子株式会社 半導体発光装置
CN103115282A (zh) * 2011-11-16 2013-05-22 苏州通亮照明科技有限公司 一种背光模组及用于背光模组上的扩散构件
US10115862B2 (en) 2011-12-27 2018-10-30 eLux Inc. Fluidic assembly top-contact LED disk
JP2013157341A (ja) * 2012-01-05 2013-08-15 Canon Components Inc Ｌｅｄ照明装置
TWI641726B (zh) * 2012-01-16 2018-11-21 日立化成股份有限公司 Silver surface treatment agent and illuminating device
JP5948890B2 (ja) * 2012-01-20 2016-07-06 住友電気工業株式会社 集光型太陽光発電モジュール、集光型太陽光発電パネル、及び、集光型太陽光発電モジュール用フレキシブルプリント配線板
JP6258227B2 (ja) * 2012-02-10 2018-01-10 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 薄膜ブロックコポリマーの配向性の制御のための無水コポリマートップコート
JP2013175528A (ja) * 2012-02-24 2013-09-05 Stanley Electric Co Ltd 発光装置及びその製造方法
JP5926986B2 (ja) * 2012-03-05 2016-05-25 株式会社朝日ラバー 回路付白色反射シートロール、及びその製造方法
EP2717331A4 (en) * 2012-03-29 2015-03-04 Dainippon Printing Co Ltd COLLECTOR PLATE FOR A SOLAR CELL AND SOLAR CELL MODULE WITH A COLLECTOR FILM FOR A SOLAR CELL
KR20130111155A (ko) * 2012-03-30 2013-10-10 주식회사 엘지화학 유기전자소자용 기판
US20130273259A1 (en) * 2012-04-13 2013-10-17 Mélanie Emilie Céline Depardieu Marking coating
JP2013226769A (ja) * 2012-04-27 2013-11-07 Asahi Rubber Inc 白色反射膜付基材、それを用いた白色反射膜付カバーレイシート及び白色反射膜付回路基板
JP5234209B1 (ja) * 2012-07-20 2013-07-10 東洋インキＳｃホールディングス株式会社 太陽電池封止材用樹脂組成物
US20140043814A1 (en) * 2012-08-07 2014-02-13 Toshiba Lighting & Technology Corporation Light emitting module and lighting system
JP2014053582A (ja) * 2012-08-07 2014-03-20 Toshiba Lighting & Technology Corp 発光モジュール及び照明装置
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US9203002B2 (en) * 2012-10-19 2015-12-01 Osram Sylvania Inc. Ultraviolet reflective silicone compositions, reflectors, and light sources incorporating the same
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WO2014109293A1 (ja) * 2013-01-10 2014-07-17 コニカミノルタ株式会社 Ｌｅｄ装置およびその製造に用いられる塗布液
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TWI616489B (zh) * 2013-02-18 2018-03-01 可應用於發光二極體元件之聚矽氧烷組合物、基座配方及其發光二極體元件
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US9115870B2 (en) 2013-03-14 2015-08-25 Cree, Inc. LED lamp and hybrid reflector
EP2970666B1 (en) * 2013-03-15 2016-10-19 Dow Corning Corporation Aryl group-containing siloxane compositions including alkaline earth metal
JP6047674B2 (ja) * 2013-06-06 2016-12-21 フィリップス ライティング ホールディング ビー ヴィ 反射性組成物
JP2016528029A (ja) 2013-07-05 2016-09-15 日東電工株式会社 光触媒シート
JP6301602B2 (ja) * 2013-07-22 2018-03-28 ローム株式会社 パワーモジュールおよびその製造方法
US9666733B2 (en) 2013-09-04 2017-05-30 Hyeon Woo AHN Solar cell using printed circuit board
EP2846361B1 (en) * 2013-09-04 2020-05-13 SOFTPV Inc. Solar cell using printed circuit board
JP6352613B2 (ja) * 2013-10-24 2018-07-04 帝人フィルムソリューション株式会社 白色反射フィルム
JP5954295B2 (ja) * 2013-10-28 2016-07-20 住友電気工業株式会社 フラットケーブルとその製造方法
CN105705200A (zh) * 2013-11-12 2016-06-22 皮奇泰克株式会社 Led垫、用于制造led垫的方法以及包括led垫的个人用治疗器
JP6244857B2 (ja) * 2013-11-26 2017-12-13 日亜化学工業株式会社 発光装置
CN104730606A (zh) * 2013-12-24 2015-06-24 鸿富锦精密工业（深圳）有限公司 光反射片及其制造方法
CN104804660B (zh) * 2014-01-23 2017-03-15 台虹科技股份有限公司 具耐高温性及高反射率的印刷电路板用覆盖保护胶片
JP2015138704A (ja) * 2014-01-23 2015-07-30 スリーエム イノベイティブ プロパティズ カンパニー 発光素子モジュール
JP6332787B2 (ja) * 2014-02-17 2018-05-30 住友電工プリントサーキット株式会社 カバーレイ及びプリント配線板
CN106029333B (zh) * 2014-02-24 2018-06-12 英派尔科技开发有限公司 增加的三维打印物品的层间粘附性
US10743412B2 (en) * 2014-02-27 2020-08-11 Shin-Etsu Chemical Co., Ltd. Substrate and semiconductor apparatus
JP5702482B2 (ja) * 2014-03-05 2015-04-15 帝人デュポンフィルム株式会社 白色反射フィルム
EP2916628A1 (en) * 2014-03-07 2015-09-09 Taiflex Scientific Co., Ltd. Cover layer with high thermal resistance and high reflectivity for a printed circuit board
US20150257296A1 (en) * 2014-03-07 2015-09-10 Taiflex Scientific Co., Ltd. Cover layer with high thermal resistance and high reflectivity for a printed circuit board
WO2015133599A1 (ja) * 2014-03-07 2015-09-11 富士フイルム株式会社 加飾材付き基材およびその製造方法、タッチパネル、ならびに情報表示装置
CN103895615A (zh) * 2014-03-14 2014-07-02 金少青 一种汽车大灯翻新工艺
TWI651017B (zh) * 2014-03-28 2019-02-11 日商日產化學工業股份有限公司 表面粗化方法
FR3019314B1 (fr) * 2014-03-28 2017-08-11 Gaggione Sas Collimateur de lumiere
US9671085B2 (en) 2014-04-22 2017-06-06 Dow Corning Corporation Reflector for an LED light source
JP2015216353A (ja) * 2014-04-23 2015-12-03 日東電工株式会社 波長変換接合部材、波長変換放熱部材および発光装置
JP5894352B1 (ja) * 2014-05-09 2016-03-30 京セラ株式会社 発光素子搭載用基板および発光装置
KR20170002618A (ko) * 2014-05-15 2017-01-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 반사성 기판 상의 가요성 회로
CN105322433B (zh) * 2014-05-28 2020-02-04 深圳光峰科技股份有限公司 波长转换装置及其相关发光装置
JP6484972B2 (ja) * 2014-06-20 2019-03-20 大日本印刷株式会社 発光部品が実装された実装基板、および発光部品が実装される配線基板
JP2016009690A (ja) * 2014-06-20 2016-01-18 大日本印刷株式会社 実装基板および実装基板の製造方法
JP2016009689A (ja) * 2014-06-20 2016-01-18 大日本印刷株式会社 実装基板の製造方法および実装基板
US9356185B2 (en) 2014-06-20 2016-05-31 Heptagon Micro Optics Pte. Ltd. Compact light sensing modules including reflective surfaces to enhance light collection and/or emission, and methods of fabricating such modules
RU2571176C1 (ru) * 2014-07-14 2015-12-20 Гиа Маргович Гвичия Светодиодная матрица
JP6425945B2 (ja) * 2014-08-21 2018-11-21 東洋アルミニウム株式会社 インターコネクタ用光拡散部材及びこれを備える太陽電池用インターコネクタ、並びに太陽電池モジュール
JP6634668B2 (ja) * 2014-08-29 2020-01-22 大日本印刷株式会社 実装基板の製造方法および実装基板
JP6579419B2 (ja) * 2014-09-03 2019-09-25 大日本印刷株式会社 配線基板および実装基板
JP6590445B2 (ja) * 2014-09-10 2019-10-16 ダウ・東レ株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6378020B2 (ja) * 2014-09-26 2018-08-22 株式会社Ｔ＆Ｋ Ｔｏｋａ 積層シート
KR20160038568A (ko) * 2014-09-30 2016-04-07 (주)포인트엔지니어링 복수의 곡면 캐비티를 포함하는 칩 기판
CN107112400A (zh) * 2014-10-27 2017-08-29 汉高股份有限及两合公司 制造光学半导体装置的方法及用于该方法的有机硅树脂组合物
CN105732118B (zh) * 2014-12-11 2020-03-24 深圳光峰科技股份有限公司 漫反射材料、漫反射层、波长转换装置以及光源系统
KR101640588B1 (ko) * 2015-01-13 2016-07-19 주식회사 베이스 광균일도가 우수한 led용 색변환 유리
DE102015001902A1 (de) * 2015-02-18 2016-08-18 Continental Reifen Deutschland Gmbh Verfahren zur Verbesserung der Haftung zwischen einem Verstärkungselement und einem elastomeren Matrixmaterial
JP2016171199A (ja) * 2015-03-12 2016-09-23 イビデン株式会社 発光素子搭載基板
CN107406681B (zh) * 2015-03-31 2020-02-07 太阳油墨制造株式会社 固化性树脂组合物、干膜、固化物及印刷电路板
WO2016172290A1 (en) * 2015-04-21 2016-10-27 Salk Institute For Biological Studies Methods of treating lipodystrophy using fgf-1 compounds
CN106206904B (zh) * 2015-04-29 2019-05-03 深圳光峰科技股份有限公司 一种波长转换装置、荧光色轮及发光装置
JP6596920B2 (ja) 2015-05-21 2019-10-30 コニカミノルタ株式会社 音響レンズ、その製造方法、超音波探触子および超音波撮像装置
KR101788381B1 (ko) * 2015-06-18 2017-10-20 삼성에스디아이 주식회사 윈도우 필름용 조성물, 이로부터 형성된 플렉시블 윈도우 필름 및 이를 포함하는 플렉시블 디스플레이 장치
WO2016205468A1 (en) * 2015-06-18 2016-12-22 Nusil Technology Llc High strength silicone elastomers and compositions therefor
CN106317894B (zh) * 2015-06-30 2019-03-29 比亚迪股份有限公司 有机硅组合物、反光涂层及其制备方法与包括其的光伏组件
CN105086381B (zh) * 2015-07-31 2017-04-26 深圳市兴盛迪新材料有限公司 聚对苯二甲酸丁二醇酯复合材料及其制备方法
JP6718132B2 (ja) * 2015-11-06 2020-07-08 セイコーエプソン株式会社 三次元構造物の製造方法及びその製造装置
JP2017088776A (ja) * 2015-11-13 2017-05-25 信越化学工業株式会社 付加硬化型シリコーン樹脂組成物、該組成物の製造方法、及び光学半導体装置
KR102450574B1 (ko) 2015-11-19 2022-10-11 삼성전자주식회사 반도체 패키지용 본딩 와이어 및 이를 포함하는 반도체 패키지
DE102016202103A1 (de) * 2016-02-11 2017-08-17 Osram Gmbh Verfahren zum Herstellen eines Leuchtmoduls, Leuchtmodul sowie Verwendung eines Optikelements in einem Leuchtmodul
MA43805A (fr) * 2016-02-23 2018-11-28 Advanced Environmental Recycling Tech Inc Compositions et procédés pour réduire la température de surface d'articles composites
JP6089144B1 (ja) * 2016-03-30 2017-03-01 日本タングステン株式会社 銅張積層板およびその製造方法
KR20180128921A (ko) * 2016-03-30 2018-12-04 히타치가세이가부시끼가이샤 열경화성 수지 조성물, 광 반도체 소자 탑재용 기판 및 그의 제조 방법 및 광 반도체 장치
EP3226290B1 (en) * 2016-04-01 2024-04-17 Nichia Corporation Method of manufacturing a light emitting element mounting base member, and light emitting element mounting base member
JP2017191839A (ja) * 2016-04-12 2017-10-19 株式会社カネカ 赤外ｌｅｄ発光装置の半導体パッケージ用熱硬化性樹脂組成物、タブレット、半導体パッケージ、赤外ｌｅｄ発光装置。
CN105895719B (zh) * 2016-05-13 2017-12-26 广东大粤新能源科技股份有限公司 一种太阳能光伏组件
JP6658295B2 (ja) * 2016-05-19 2020-03-04 株式会社オートネットワーク技術研究所 止水用シリコーンゴム組成物、止水用シリコーンゴム成形体およびワイヤーハーネス
JP6680081B2 (ja) * 2016-05-30 2020-04-15 日亜化学工業株式会社 発光装置及びその製造方法
JP6418200B2 (ja) 2016-05-31 2018-11-07 日亜化学工業株式会社 発光装置及びその製造方法
US10074626B2 (en) * 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
CN106085214B (zh) * 2016-06-12 2019-01-11 上海宜瓷龙新材料股份有限公司 一种用于玻璃基太阳能背板的陶瓷涂料及其制备方法
CN105949998B (zh) * 2016-06-12 2018-12-04 上海宜瓷龙新材料股份有限公司 用于太阳能背板高反射率的陶瓷涂料及其制备方法
US20200313049A1 (en) * 2016-06-21 2020-10-01 Soraa, Inc. Light emitting diode package
CN107546301B (zh) * 2016-06-29 2019-12-06 江西省晶能半导体有限公司 一种白胶、led灯珠及其的封装方法
JP7065381B2 (ja) * 2016-07-19 2022-05-12 パナソニックＩｐマネジメント株式会社 光反射体、ベース体、発光装置及びベース体の製造方法
KR102543179B1 (ko) * 2016-08-22 2023-06-14 삼성전자주식회사 발광다이오드 모듈 제조방법
KR20190053876A (ko) * 2016-09-07 2019-05-20 스미또모 가가꾸 가부시키가이샤 파장 변환 재료 함유 실리콘 수지 조성물 및 파장 변환 재료 함유 시트
US9837390B1 (en) * 2016-11-07 2017-12-05 Corning Incorporated Systems and methods for creating fluidic assembly structures on a substrate
CN106542820A (zh) * 2016-11-08 2017-03-29 泰州职业技术学院 一种用于降低沥青路面温度的红外热辐射功能降温粉体
JP6536560B2 (ja) 2016-12-27 2019-07-03 日亜化学工業株式会社 発光装置及びその製造方法
CN106775167B (zh) * 2017-01-13 2020-12-18 京东方科技集团股份有限公司 触控基板及其制备方法、显示装置
DE102017101729A1 (de) * 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
JP6867203B2 (ja) * 2017-03-17 2021-04-28 旭化成株式会社 硬化性組成物
WO2018194572A1 (en) * 2017-04-19 2018-10-25 Covestro Llc Relective coatings and in-mold processes for their application to polymer substrates
US10153416B1 (en) * 2017-05-23 2018-12-11 Radiant Choice Limited Package body and light emitting device using same
EP3637158A4 (en) * 2017-06-06 2020-06-10 Panasonic Intellectual Property Management Co., Ltd. WAVELENGTH CONVERTER AND MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE USING THE WAVELENGTH CONVERTER
JP6965040B2 (ja) 2017-06-26 2021-11-10 テクノＵｍｇ株式会社 熱可塑性樹脂組成物並びにその樹脂成形品及び塗装加工品
WO2019003775A1 (ja) * 2017-06-29 2019-01-03 京セラ株式会社 回路基板およびこれを備える発光装置
DE102017117150A1 (de) * 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
DE102017117441A1 (de) * 2017-08-01 2019-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI633645B (zh) * 2017-08-04 2018-08-21 鼎展電子股份有限公司 可撓性led元件與可撓性led顯示面板
JP6988295B2 (ja) * 2017-09-14 2022-01-05 京セラドキュメントソリューションズ株式会社 照明装置及び該照明装置を備えた画像読取装置
CN112180488A (zh) * 2017-09-29 2021-01-05 日立化成株式会社 波长转换构件、背光单元、图像显示装置、波长转换用树脂组合物和波长转换用树脂固化物
US10897824B2 (en) * 2017-10-30 2021-01-19 Baker Hughes, A Ge Company, Llc Encapsulation of downhole microelectronics and method the same
KR102542426B1 (ko) * 2017-12-20 2023-06-12 삼성전자주식회사 파장변환 필름과, 이를 구비한 반도체 발광장치
TWI642047B (zh) * 2018-01-26 2018-11-21 鼎展電子股份有限公司 可撓性微發光二極體顯示模組
CN110120623B (zh) * 2018-02-05 2021-06-08 深圳光峰科技股份有限公司 密封件及发光装置
CN110299441A (zh) * 2018-03-22 2019-10-01 中国科学院半导体研究所 可提高led出光效率的硅基反射圈、制备方法及led器件
JP6992654B2 (ja) * 2018-03-30 2022-01-13 Jnc株式会社 積層シート、放熱部品、発光デバイス、発光装置
JP6680311B2 (ja) * 2018-06-04 2020-04-15 日亜化学工業株式会社 発光装置および面発光光源
KR102567653B1 (ko) * 2018-06-11 2023-08-17 삼성디스플레이 주식회사 백라이트 유닛 및 이를 포함하는 표시 장치
JP7206746B2 (ja) * 2018-09-26 2023-01-18 富士フイルムビジネスイノベーション株式会社 定着部材、定着装置、プロセスカートリッジ及び画像形成装置
CN111087819A (zh) * 2018-10-23 2020-05-01 北京科化新材料科技有限公司 一种液体硅材料复合物及其制备方法和应用
US20200163209A1 (en) * 2018-11-20 2020-05-21 Wen Yao Chang Circuit board with substrate made of silicone
WO2020111180A1 (ja) * 2018-11-30 2020-06-04 デンカ株式会社 積層体
KR20210098452A (ko) * 2018-12-04 2021-08-10 하리마카세이 가부시기가이샤 하드 코트층 부가 몰드 수지 및 그의 제조 방법
KR102127425B1 (ko) * 2019-01-10 2020-06-26 미르텍알앤디 주식회사 마이크로 콘택트 핀 조립체
CN109825212A (zh) * 2019-03-07 2019-05-31 昆山雅森电子材料科技有限公司 Led用高反射性超薄覆盖膜及其制备方法
JP7111041B2 (ja) * 2019-03-25 2022-08-02 信越化学工業株式会社 積層体の製造方法
EP3956724A4 (en) 2019-04-19 2022-11-30 Materion Precision Optics (Shanghai) Limited HIGH TEMPERATURE RESISTANT REFLECTIVE COATING FOR WAVELENGTH CONVERSION DEVICES
KR102149426B1 (ko) * 2019-05-13 2020-08-31 주식회사 레다즈 엘씨디 모듈 및 그 제조방법
US11447659B2 (en) * 2019-06-24 2022-09-20 The Johns Hopkins University Low solar absorptance coatings
CN110469787A (zh) * 2019-08-19 2019-11-19 深圳市百柔新材料技术有限公司 一种可印制led背光板的制作方法
JP7121294B2 (ja) * 2019-09-10 2022-08-18 日亜化学工業株式会社 発光装置の製造方法
CN110964323A (zh) * 2019-10-30 2020-04-07 安徽康宁油脂科技有限公司 一种高性能工业复合甘油及其制备方法
JP2021076753A (ja) * 2019-11-11 2021-05-20 株式会社朝日ラバー シリコーン樹脂製紫外線反射保護基材、その製造方法、及びそれに用いる原材料組成物
CN114730823A (zh) * 2019-12-11 2022-07-08 新唐科技日本株式会社 半导体装置
DE102019134728A1 (de) * 2019-12-17 2021-06-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optische komponente, optoelektronisches halbleiterbauteil und verfahren zur herstellung einer optischen komponente
US11842944B2 (en) * 2019-12-26 2023-12-12 Intel Corporation IC assemblies including die perimeter frames suitable for containing thermal interface materials
WO2021149497A1 (ja) * 2020-01-20 2021-07-29 岡本硝子株式会社 レジストインク
WO2021166433A1 (ja) 2020-02-18 2021-08-26 富士フイルム株式会社 光源ユニット、表示装置、及び光源ユニット製造装置
WO2021166431A1 (ja) 2020-02-18 2021-08-26 富士フイルム株式会社 光源ユニット、表示装置、及び光源ユニット製造装置
JP7078863B2 (ja) * 2020-04-01 2022-06-01 日亜化学工業株式会社 発光装置及びその製造方法
CN111552166B (zh) * 2020-04-03 2021-05-25 维沃移动通信有限公司 电子设备、交互方法及装置
JP7337025B2 (ja) * 2020-05-01 2023-09-01 株式会社小糸製作所 車両用灯具
WO2021235310A1 (ja) * 2020-05-22 2021-11-25 東レ株式会社 Ｌｅｄ基板、積層体、およびｌｅｄ基板の製造方法
US11806425B2 (en) 2020-10-02 2023-11-07 Michael E. Stein Chemical composition and related methods
CN115702503A (zh) * 2020-10-05 2023-02-14 株式会社朝日橡胶 紫外线led光学元件
CN112251088B (zh) * 2020-10-22 2022-03-11 重庆建谊祥科技有限公司 双氟处理液、制备方法及镁合金建筑模板表面处理方法
CN112266571A (zh) * 2020-10-26 2021-01-26 东莞市鑫聚光电科技股份有限公司 一种pdlc调光膜
CN114958063B (zh) * 2021-02-25 2023-11-17 合肥京东方光电科技有限公司 组合物、基板及反光层的制备方法
WO2022209840A1 (ja) * 2021-03-30 2022-10-06 株式会社朝日ラバー 紫外線反射材、その製造方法、及びそれの原材料組成物
CN113443487B (zh) * 2021-08-30 2021-11-23 常州欣盛半导体技术股份有限公司 Fpc烘烤箱用转向调节装置
CN115212591B (zh) * 2021-09-27 2023-09-29 江门市尚逸家居用品有限公司 一种拼图玩具组件
CN114023899A (zh) * 2021-10-25 2022-02-08 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
JP2023173245A (ja) * 2022-05-25 2023-12-07 北陽電機株式会社 反射ミラー部材、光電センサ、および光測距装置
CN115248469B (zh) * 2022-07-11 2023-09-12 中国科学院上海技术物理研究所 一种长波红外宽波段吸收结构
CN115407554A (zh) * 2022-08-16 2022-11-29 昆山锦林光电材料有限公司 一种小型led背光模组反光白胶封装结构
CN115418164B (zh) * 2022-09-16 2024-03-26 奥创特新(苏州)科技有限公司 一种高温热反射材料及其施工工艺
WO2024084965A1 (ja) * 2022-10-18 2024-04-25 東京エレクトロン株式会社 回折格子の形成方法

Family Cites Families (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087585A (en) * 1977-05-23 1978-05-02 Dow Corning Corporation Self-adhering silicone compositions and preparations thereof
JPS61103931A (ja) * 1984-10-26 1986-05-22 Shin Etsu Polymer Co Ltd シリコ−ンゴム成形体の製造方法
US4544696A (en) * 1984-10-29 1985-10-01 Sws Silicones Corporation Silicone elastomers having thermally conductive properties
JPS62223722A (ja) * 1986-03-25 1987-10-01 Canon Inc 光変調素子用材料
JP3029680B2 (ja) * 1991-01-29 2000-04-04 東レ・ダウコーニング・シリコーン株式会社 オルガノペンタシロキサンおよびその製造方法
JPH05315654A (ja) * 1992-05-08 1993-11-26 Denki Kagaku Kogyo Kk 発光ダイオードランプ
JPH06329803A (ja) * 1993-05-24 1994-11-29 Shin Etsu Chem Co Ltd 電気接点障害のないシリコーン製品
JP2879773B2 (ja) * 1993-05-31 1999-04-05 京セラ株式会社 画像装置及びその製造方法
US5599894A (en) * 1994-06-07 1997-02-04 Shin-Etsu Chemical Co., Ltd. Silicone gel compositions
JP3031184B2 (ja) * 1994-11-22 2000-04-10 株式会社コスモテック シリコーンゴム粘着シート及びその製造方法
JPH1077413A (ja) * 1996-08-30 1998-03-24 Toray Dow Corning Silicone Co Ltd 加熱硬化性シリコーンゴム組成物
US6468638B2 (en) 1999-03-16 2002-10-22 Alien Technology Corporation Web process interconnect in electronic assemblies
JP3704286B2 (ja) 1999-11-17 2005-10-12 信越化学工業株式会社 酸化チタン充填付加反応硬化型シリコーンゴム組成物及びその硬化物
JP4735910B2 (ja) * 2000-09-28 2011-07-27 Ｄｉｃ株式会社 水性インク組成物
JP2002258020A (ja) * 2001-02-19 2002-09-11 Three M Innovative Properties Co 反射シート及び反射膜
JP2002265901A (ja) * 2001-03-15 2002-09-18 Fujimori Kogyo Co Ltd 剥離シートの製造方法
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
US6632892B2 (en) * 2001-08-21 2003-10-14 General Electric Company Composition comprising silicone epoxy resin, hydroxyl compound, anhydride and curing catalyst
JP2003185813A (ja) * 2001-12-21 2003-07-03 Mitsui Chemicals Inc 反射体およびその用途
JP4121874B2 (ja) * 2002-03-13 2008-07-23 日世株式会社 生分解性成形物の製造方法およびそれに用いる成形型
JP4180844B2 (ja) 2002-06-06 2008-11-12 昭和電工株式会社 硬化性難燃組成物、その硬化物及びその製造方法
US6800373B2 (en) * 2002-10-07 2004-10-05 General Electric Company Epoxy resin compositions, solid state devices encapsulated therewith and method
US7445769B2 (en) * 2002-10-31 2008-11-04 Cadbury Adams Usa Llc Compositions for removing stains from dental surfaces and methods of making and using the same
JP4774201B2 (ja) 2003-10-08 2011-09-14 日亜化学工業株式会社 パッケージ成形体及び半導体装置
WO2006015379A2 (en) * 2004-08-02 2006-02-09 Cornell Research Foundation, Inc. Electron spin resonance microscope for imaging with micron resolution
JP4803342B2 (ja) * 2004-10-19 2011-10-26 信越化学工業株式会社 耐擦傷性表面被膜形成用シリコーンコーティング組成物及びそれを用いた被覆物品
JP2006124600A (ja) 2004-11-01 2006-05-18 Teijin Chem Ltd 光高反射性ポリカーボネート樹脂組成物およびその製造方法
JP4634810B2 (ja) * 2005-01-20 2011-02-16 信越化学工業株式会社 シリコーン封止型ｌｅｄ
US8293849B2 (en) * 2005-01-24 2012-10-23 Momentive Performance Materials Japan Llc Silicone composition for sealing light emitting element, and light emittying device
AT501491B1 (de) * 2005-02-18 2007-03-15 Knorr Bremse Gmbh Dichtungsprofil
JP4371234B2 (ja) 2005-03-03 2009-11-25 信越化学工業株式会社 フレキシブル金属箔ポリイミド積層板
US7745818B2 (en) * 2005-04-08 2010-06-29 Nichia Corporation Light emitting device with silicone resin layer formed by screen printing
JP4634856B2 (ja) 2005-05-12 2011-02-16 利昌工業株式会社 白色プリプレグ、白色積層板、及び金属箔張り白色積層板
TWI256737B (en) * 2005-05-19 2006-06-11 Pi-Fu Yang One-block light-emitting device and manufacturing method thereof
JP2006343445A (ja) 2005-06-08 2006-12-21 Mitsubishi Engineering Plastics Corp 光反射材及びその製造法
EP2323178B1 (en) * 2005-08-04 2015-08-19 Nichia Corporation Light-emitting device, method for manufacturing same, molded body and sealing member
WO2007034919A1 (ja) * 2005-09-22 2007-03-29 Mitsubishi Chemical Corporation 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス
JP5066333B2 (ja) * 2005-11-02 2012-11-07 シチズン電子株式会社 Ｌｅｄ発光装置。
US8017687B2 (en) * 2005-11-15 2011-09-13 Momentive Performance Materials Inc. Swollen silicone composition and process of producing same
US7863361B2 (en) * 2005-11-15 2011-01-04 Momentive Performance Materials Inc. Swollen silicone composition, process of producing same and products thereof
JP4518013B2 (ja) * 2005-12-14 2010-08-04 Ｔｄｋ株式会社 電子部品
WO2007072659A1 (ja) 2005-12-20 2007-06-28 Toshiba Lighting & Technology Corporation 発光装置
CN101346415B (zh) * 2005-12-26 2012-06-27 株式会社钟化 固化性组合物
WO2007074892A1 (ja) 2005-12-26 2007-07-05 Teijin Limited 透明フィルム
JP5232369B2 (ja) * 2006-02-03 2013-07-10 日立化成株式会社 光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法
JP2007270054A (ja) 2006-03-31 2007-10-18 Jsr Corp 金属酸化物微粒子含有ポリシロキサン組成物およびその製造方法
EP2024998A1 (en) * 2006-06-05 2009-02-18 Dow Corning Corporation Electronic package and method of preparing same
US8348456B2 (en) * 2006-08-11 2013-01-08 Mitsubishi Chemical Corporation Illuminating device
ATE530946T1 (de) 2006-08-22 2011-11-15 Konica Minolta Holdings Inc Anzeigeelement
TWI472595B (zh) * 2006-08-22 2015-02-11 Mitsubishi Chem Corp Semiconductor component components and semiconductor light emitting components
JPWO2008023605A1 (ja) * 2006-08-23 2010-01-07 三井化学株式会社 光反射体、およびそれを含む光源
CN101522838B (zh) * 2006-10-05 2012-07-04 陶氏康宁公司 有机硅树脂膜及其制备方法
US20080117619A1 (en) 2006-11-21 2008-05-22 Siew It Pang Light source utilizing a flexible circuit carrier and flexible reflectors
JP2008143981A (ja) 2006-12-07 2008-06-26 Three M Innovative Properties Co 光反射性樹脂組成物、発光装置及び光学表示装置
US20080144322A1 (en) * 2006-12-15 2008-06-19 Aizar Abdul Karim Norfidathul LED Light Source Having Flexible Reflectors
JP2008159713A (ja) 2006-12-21 2008-07-10 Momentive Performance Materials Japan Kk 発光装置
JP2008187030A (ja) 2007-01-30 2008-08-14 Stanley Electric Co Ltd 発光装置
JP2008222828A (ja) * 2007-03-12 2008-09-25 Momentive Performance Materials Japan Kk 凸レンズ形成用シリコーンゴム組成物及びそれを用いた光半導体装置
JP2008225326A (ja) * 2007-03-15 2008-09-25 Mitsubishi Plastics Ind Ltd 反射フィルム及び反射板
JP4973279B2 (ja) 2007-03-29 2012-07-11 豊田合成株式会社 発光装置及びその製造方法
JP2008251316A (ja) * 2007-03-30 2008-10-16 Hitachi Ltd プラズマディスプレイパネル及びその製造方法
JP4771179B2 (ja) * 2007-05-31 2011-09-14 東芝ライテック株式会社 照明装置
JP2009021394A (ja) * 2007-07-12 2009-01-29 Nitto Denko Corp 光半導体素子収納用実装パッケージ用樹脂組成物およびそれを用いて得られる光半導体発光装置
JP2009046658A (ja) * 2007-07-23 2009-03-05 Sony Corp 硬化性樹脂材料−微粒子複合材料及びその製造方法、光学材料、並びに発光装置
US20090032829A1 (en) 2007-07-30 2009-02-05 Tong Fatt Chew LED Light Source with Increased Thermal Conductivity
US7968899B2 (en) 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
JP5315654B2 (ja) 2007-09-20 2013-10-16 横浜ゴム株式会社 空気入りタイヤ
JP2009103915A (ja) * 2007-10-23 2009-05-14 Fuji Xerox Co Ltd 光導波路フィルム及びその製造方法、並びに、光送受信モジュール
JP2009135485A (ja) * 2007-11-07 2009-06-18 Mitsubishi Chemicals Corp 半導体発光装置及びその製造方法
US8017246B2 (en) * 2007-11-08 2011-09-13 Philips Lumileds Lighting Company, Llc Silicone resin for protecting a light transmitting surface of an optoelectronic device
JP2009129801A (ja) 2007-11-27 2009-06-11 Denki Kagaku Kogyo Kk 金属ベース回路基板
JP4623322B2 (ja) * 2007-12-26 2011-02-02 信越化学工業株式会社 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法
JP5221122B2 (ja) 2007-12-28 2013-06-26 株式会社朝日ラバー シリコーン樹脂基材
JP2009173773A (ja) * 2008-01-24 2009-08-06 Toshiba Corp シリコーン樹脂組成物および半導体装置
JP5064254B2 (ja) 2008-01-30 2012-10-31 日東電工株式会社 光半導体素子封止用樹脂シートおよび光半導体装置
JP2009224538A (ja) * 2008-03-17 2009-10-01 Citizen Holdings Co Ltd 半導体発光装置
JP2009235279A (ja) * 2008-03-27 2009-10-15 Shin Etsu Chem Co Ltd 熱伝導性成形体およびその製造方法
JP2009244551A (ja) 2008-03-31 2009-10-22 Konica Minolta Business Technologies Inc 画像表示装置用表示粒子および画像表示装置
JP5355030B2 (ja) * 2008-04-24 2013-11-27 シチズンホールディングス株式会社 Ｌｅｄ光源及びｌｅｄ光源の色度調整方法
JP4966915B2 (ja) * 2008-05-09 2012-07-04 株式会社タイカ 熱伝導性シート、熱伝導性シート積層体及びその製造方法
JP2009275196A (ja) * 2008-05-19 2009-11-26 Sony Corp 硬化性樹脂材料組成物、光学材料、発光装置及びその製造方法、並びに電子デバイス
JP2010004035A (ja) * 2008-05-22 2010-01-07 Mitsubishi Chemicals Corp 半導体発光装置、照明装置、および画像表示装置
JP5289835B2 (ja) 2008-06-25 2013-09-11 シャープ株式会社 発光装置およびその製造方法
KR101277778B1 (ko) 2008-12-03 2013-06-24 신닛테츠스미킨 카부시키카이샤 도장 금속재 및 그 제조 방법
JP2010232252A (ja) 2009-03-26 2010-10-14 Unon Giken:Kk 白色反射層を有するカバーレイフィルム
JP5230532B2 (ja) * 2009-05-29 2013-07-10 三菱樹脂株式会社 白色フィルム、金属積層体、ｌｅｄ搭載用基板及び光源装置
JP5332921B2 (ja) * 2009-06-05 2013-11-06 三菱化学株式会社 半導体発光装置、照明装置、及び画像表示装置
EP2448026A4 (en) 2009-06-26 2013-08-14 Asahi Rubber Inc REFLECTIVE MATERIAL OF WHITE COLOR AND PRODUCTION PROCESS

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