JP5649378B2 - 表示装置 - Google Patents

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Publication number
JP5649378B2
JP5649378B2 JP2010196444A JP2010196444A JP5649378B2 JP 5649378 B2 JP5649378 B2 JP 5649378B2 JP 2010196444 A JP2010196444 A JP 2010196444A JP 2010196444 A JP2010196444 A JP 2010196444A JP 5649378 B2 JP5649378 B2 JP 5649378B2
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layer
oxide semiconductor
electrode layer
insulating layer
oxide
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Japanese (ja)
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JP2011077510A (ja
JP2011077510A5 (ja
Inventor
山崎　舜平
舜平 山崎
俊成 佐々木
俊成 佐々木
坂田　淳一郎
淳一郎 坂田
将志 津吹
将志 津吹
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010196444A 2009-09-04 2010-09-02 表示装置 Active JP5649378B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010196444A JP5649378B2 (ja) 2009-09-04 2010-09-02 表示装置

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JP2009204801 2009-09-04
JP2009204801 2009-09-04
JP2010196444A JP5649378B2 (ja) 2009-09-04 2010-09-02 表示装置

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JP2014229041A Division JP5965461B2 (ja) 2009-09-04 2014-11-11 トランジスタ

Publications (3)

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JP2011077510A JP2011077510A (ja) 2011-04-14
JP2011077510A5 JP2011077510A5 (ja) 2013-10-17
JP5649378B2 true JP5649378B2 (ja) 2015-01-07

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JP2010196444A Active JP5649378B2 (ja) 2009-09-04 2010-09-02 表示装置
JP2014229041A Active JP5965461B2 (ja) 2009-09-04 2014-11-11 トランジスタ
JP2016131623A Expired - Fee Related JP6294395B2 (ja) 2009-09-04 2016-07-01 半導体装置
JP2018025291A Withdrawn JP2018125536A (ja) 2009-09-04 2018-02-15 表示装置
JP2019129712A Active JP6625781B1 (ja) 2009-09-04 2019-07-12 表示装置
JP2019214329A Expired - Fee Related JP6676819B2 (ja) 2009-09-04 2019-11-27 表示装置
JP2020042668A Active JP6756937B2 (ja) 2009-09-04 2020-03-12 表示装置
JP2020143091A Withdrawn JP2020191480A (ja) 2009-09-04 2020-08-27 表示装置
JP2022039206A Withdrawn JP2022095639A (ja) 2009-09-04 2022-03-14 表示装置
JP2023016909A Withdrawn JP2023065405A (ja) 2009-09-04 2023-02-07 表示装置
JP2025001723A Pending JP2025039658A (ja) 2009-09-04 2025-01-06 表示装置

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JP2014229041A Active JP5965461B2 (ja) 2009-09-04 2014-11-11 トランジスタ
JP2016131623A Expired - Fee Related JP6294395B2 (ja) 2009-09-04 2016-07-01 半導体装置
JP2018025291A Withdrawn JP2018125536A (ja) 2009-09-04 2018-02-15 表示装置
JP2019129712A Active JP6625781B1 (ja) 2009-09-04 2019-07-12 表示装置
JP2019214329A Expired - Fee Related JP6676819B2 (ja) 2009-09-04 2019-11-27 表示装置
JP2020042668A Active JP6756937B2 (ja) 2009-09-04 2020-03-12 表示装置
JP2020143091A Withdrawn JP2020191480A (ja) 2009-09-04 2020-08-27 表示装置
JP2022039206A Withdrawn JP2022095639A (ja) 2009-09-04 2022-03-14 表示装置
JP2023016909A Withdrawn JP2023065405A (ja) 2009-09-04 2023-02-07 表示装置
JP2025001723A Pending JP2025039658A (ja) 2009-09-04 2025-01-06 表示装置

Country Status (4)

Country Link
US (12) US8389989B2 (enExample)
JP (11) JP5649378B2 (enExample)
TW (10) TWI895115B (enExample)
WO (1) WO2011027656A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9555026B2 (en) 2013-02-06 2017-01-31 Otsuka Pharmaceutical Co., Ltd. Solid dispersion comprising amorphous cilostazol

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011027656A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR20140054465A (ko) * 2010-09-15 2014-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
KR101899375B1 (ko) * 2011-01-28 2018-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5404963B2 (ja) * 2011-03-01 2014-02-05 シャープ株式会社 薄膜トランジスタおよび表示装置
KR20120138074A (ko) * 2011-06-14 2012-12-24 삼성디스플레이 주식회사 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법
WO2013042696A1 (en) * 2011-09-23 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104380473B (zh) * 2012-05-31 2017-10-13 株式会社半导体能源研究所 半导体装置
KR20130136063A (ko) 2012-06-04 2013-12-12 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
KR101991338B1 (ko) 2012-09-24 2019-06-20 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그 제조방법
KR102109166B1 (ko) 2013-01-15 2020-05-12 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 구비하는 표시 기판
KR102080065B1 (ko) * 2013-04-30 2020-04-07 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US9799772B2 (en) * 2013-05-29 2017-10-24 Joled Inc. Thin film transistor device, method for manufacturing same and display device
JP6286988B2 (ja) * 2013-09-26 2018-03-07 凸版印刷株式会社 薄膜トランジスタの製造方法
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JP6216668B2 (ja) * 2014-03-17 2017-10-18 株式会社ジャパンディスプレイ 表示装置の製造方法
US9337030B2 (en) 2014-03-26 2016-05-10 Intermolecular, Inc. Method to grow in-situ crystalline IGZO using co-sputtering targets
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TWM493712U (zh) * 2014-08-01 2015-01-11 Superc Touch Corp 具有遮罩功能的感應電極之生物辨識裝置
CN104253159B (zh) * 2014-08-19 2017-06-13 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法和显示装置
JP6412791B2 (ja) * 2014-12-18 2018-10-24 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US10403646B2 (en) * 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11155754B2 (en) * 2015-07-24 2021-10-26 Sumitomo Chemical Company, Limited Composition and display device
CN105046243B (zh) * 2015-08-25 2019-12-20 业成光电（深圳）有限公司 显示装置
JP6526215B2 (ja) * 2015-09-24 2019-06-05 シャープ株式会社 半導体装置およびその製造方法
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JP2018129430A (ja) * 2017-02-09 2018-08-16 株式会社ジャパンディスプレイ 半導体装置
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TWI648581B (zh) * 2018-01-24 2019-01-21 友達光電股份有限公司 畫素結構以及可切換顯示模式的驅動方法
JP7190729B2 (ja) 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
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US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
JP7387475B2 (ja) * 2020-02-07 2023-11-28 キオクシア株式会社 半導体装置及び半導体記憶装置
TWI893073B (zh) 2020-03-20 2025-08-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2022024671A1 (ja) 2020-07-27 2022-02-03 ソニーグループ株式会社 撮像装置、ピント位置設定方法、プログラム
US11335775B2 (en) 2020-08-27 2022-05-17 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
JP7612472B2 (ja) * 2021-03-22 2025-01-14 キオクシア株式会社 半導体装置及び半導体記憶装置
KR20230164006A (ko) * 2021-04-01 2023-12-01 하마마츠 포토닉스 가부시키가이샤 제조 방법, 검사 방법, 및 검사 장치
JP2024053987A (ja) * 2022-10-04 2024-04-16 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Family Cites Families (191)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH01117068A (ja) * 1987-10-29 1989-05-09 Toshiba Corp 薄膜半導体素子
US5334859A (en) * 1991-09-05 1994-08-02 Casio Computer Co., Ltd. Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film
GB9200293D0 (en) 1992-01-08 1992-02-26 Wyeth John & Brother Ltd Piperazine derivatives
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
DE69635107D1 (de) * 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
TW494266B (en) * 1996-05-13 2002-07-11 Nanya Technology Corp Manufacturing method of thin film transistor liquid crystal display
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2000216087A (ja) * 1999-01-20 2000-08-04 Sony Corp 半導体薄膜製造方法及びレ―ザ照射装置
TW457553B (en) 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
JP4730994B2 (ja) * 1999-06-04 2011-07-20 株式会社半導体エネルギー研究所 電気光学装置及びその作製方法並びに電子装置
TW527735B (en) 1999-06-04 2003-04-11 Semiconductor Energy Lab Electro-optical device
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP3961172B2 (ja) * 1999-11-26 2007-08-22 アルプス電気株式会社 酸化物透明導電膜と酸化物透明導電膜形成用ターゲットおよび先の酸化物透明導電膜を備えた基板の製造方法と電子機器および液晶表示装置
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
US6894674B2 (en) 2000-12-06 2005-05-17 Sony Corporation Timing generation circuit for display apparatus and display apparatus incorporating the same
JP2002175053A (ja) * 2000-12-07 2002-06-21 Sony Corp アクティブマトリクス型表示装置およびこれを用いた携帯端末
JP3997731B2 (ja) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
US6906344B2 (en) * 2001-05-24 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with plural channels and corresponding plural overlapping electrodes
JP2003051599A (ja) * 2001-05-24 2003-02-21 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
JP4069648B2 (ja) * 2002-03-15 2008-04-02 カシオ計算機株式会社 半導体装置および表示駆動装置
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
TWI276696B (en) 2002-04-02 2007-03-21 Sumitomo Titanium Corp Silicon monoxide sintered product and sputtering target comprising the same
JP4364481B2 (ja) * 2002-04-22 2009-11-18 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
KR100490322B1 (ko) 2003-04-07 2005-05-17 삼성전자주식회사 유기전계발광 표시장치
JP4305192B2 (ja) 2003-04-25 2009-07-29 セイコーエプソン株式会社 薄膜半導体装置の製造方法、電気光学装置の製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
TWI395996B (zh) * 2003-07-14 2013-05-11 半導體能源研究所股份有限公司 半導體裝置及顯示裝置
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP2005085830A (ja) * 2003-09-05 2005-03-31 Sony Corp 薄膜デバイスの製造方法および薄膜デバイス
JP4401826B2 (ja) * 2004-03-10 2010-01-20 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7868326B2 (en) * 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
CA2585063C (en) * 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN101057339B (zh) * 2004-11-10 2012-12-26 佳能株式会社 无定形氧化物和场效应晶体管
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI562380B (en) * 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI445178B (zh) * 2005-01-28 2014-07-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) * 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP2007073558A (ja) * 2005-09-02 2007-03-22 Kochi Prefecture Sangyo Shinko Center 薄膜トランジスタの製法
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) * 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
KR100729043B1 (ko) 2005-09-14 2007-06-14 삼성에스디아이 주식회사 투명 박막 트랜지스터 및 그의 제조방법
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
US7982215B2 (en) * 2005-10-05 2011-07-19 Idemitsu Kosan Co., Ltd. TFT substrate and method for manufacturing TFT substrate
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101117948B1 (ko) 2005-11-15 2012-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치 제조 방법
US7745798B2 (en) * 2005-11-15 2010-06-29 Fujifilm Corporation Dual-phosphor flat panel radiation detector
JP5089139B2 (ja) * 2005-11-15 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5099740B2 (ja) * 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
KR100732849B1 (ko) * 2005-12-21 2007-06-27 삼성에스디아이 주식회사 유기 발광 표시장치
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
JP2007212699A (ja) 2006-02-09 2007-08-23 Idemitsu Kosan Co Ltd 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP2006293385A (ja) * 2006-05-24 2006-10-26 Semiconductor Energy Lab Co Ltd 表示装置
KR100801961B1 (ko) 2006-05-26 2008-02-12 한국전자통신연구원 듀얼 게이트 유기트랜지스터를 이용한 인버터
US8330492B2 (en) 2006-06-02 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP5386069B2 (ja) 2006-06-02 2014-01-15 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5026019B2 (ja) 2006-08-08 2012-09-12 三菱電機株式会社 薄膜トランジスタ基板、薄膜トランジスタの製造方法、及び表示装置
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4404881B2 (ja) 2006-08-09 2010-01-27 日本電気株式会社 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
US7651896B2 (en) 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5216276B2 (ja) * 2006-08-30 2013-06-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP2008112136A (ja) * 2006-10-04 2008-05-15 Mitsubishi Electric Corp 表示装置及びその製造方法
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
TWI354967B (en) * 2006-10-27 2011-12-21 Chimei Innolux Corp Liquid crystal display
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
JP5305630B2 (ja) * 2006-12-05 2013-10-02 キヤノン株式会社 ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法
KR101146574B1 (ko) 2006-12-05 2012-05-16 캐논 가부시끼가이샤 산화물 반도체를 이용한 박막 트랜지스터의 제조방법 및 표시장치
WO2008069255A1 (en) 2006-12-05 2008-06-12 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
JP2008151963A (ja) 2006-12-15 2008-07-03 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP5196870B2 (ja) * 2007-05-23 2013-05-15 キヤノン株式会社 酸化物半導体を用いた電子素子及びその製造方法
WO2008105347A1 (en) 2007-02-20 2008-09-04 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP5121254B2 (ja) 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
KR100851215B1 (ko) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP2009031742A (ja) 2007-04-10 2009-02-12 Fujifilm Corp 有機電界発光表示装置
US7795613B2 (en) * 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) * 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
JP5215589B2 (ja) * 2007-05-11 2013-06-19 キヤノン株式会社 絶縁ゲート型トランジスタ及び表示装置
KR100873081B1 (ko) * 2007-05-29 2008-12-09 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5361249B2 (ja) * 2007-05-31 2013-12-04 キヤノン株式会社 酸化物半導体を用いた薄膜トランジスタの製造方法
JP5138276B2 (ja) * 2007-05-31 2013-02-06 株式会社ジャパンディスプレイイースト 表示装置の製造方法
KR100882909B1 (ko) 2007-06-27 2009-02-10 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR101333594B1 (ko) 2007-08-30 2013-11-26 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
JPWO2009034953A1 (ja) * 2007-09-10 2010-12-24 出光興産株式会社 薄膜トランジスタ
JP5354999B2 (ja) * 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
JP4759598B2 (ja) 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2009099847A (ja) 2007-10-18 2009-05-07 Canon Inc 薄膜トランジスタとその製造方法及び表示装置
KR101563692B1 (ko) 2007-10-19 2015-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그 구동 방법
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
KR100936874B1 (ko) * 2007-12-18 2010-01-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법
JP5291928B2 (ja) * 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
WO2009093625A1 (ja) * 2008-01-23 2009-07-30 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及びその製造方法、それを用いた表示装置、並びに半導体装置
JP5264197B2 (ja) * 2008-01-23 2013-08-14 キヤノン株式会社 薄膜トランジスタ
US8387569B2 (en) * 2008-01-24 2013-03-05 Kenneth S. Davis Raptor perch apparatus and system
US20090188445A1 (en) * 2008-01-24 2009-07-30 Joan Viehouser Jacobsen Equine cast cover and protective device
US8586979B2 (en) * 2008-02-01 2013-11-19 Samsung Electronics Co., Ltd. Oxide semiconductor transistor and method of manufacturing the same
KR20090089151A (ko) 2008-02-18 2009-08-21 삼성전자주식회사 유기 발광 표시 장치 및 그 제조 방법
JP5540517B2 (ja) 2008-02-22 2014-07-02 凸版印刷株式会社 画像表示装置
JP2009265271A (ja) 2008-04-23 2009-11-12 Nippon Shokubai Co Ltd 電気光学表示装置
JP5704790B2 (ja) 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR100963104B1 (ko) 2008-07-08 2010-06-14 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR101810699B1 (ko) * 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR102011616B1 (ko) 2009-06-30 2019-08-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
WO2011001879A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101968855B1 (ko) * 2009-06-30 2019-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
SG10201403913PA (en) * 2009-07-10 2014-10-30 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR101900653B1 (ko) * 2009-07-10 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
TWI596741B (zh) * 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
WO2011027656A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101767035B1 (ko) * 2009-10-01 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9555026B2 (en) 2013-02-06 2017-01-31 Otsuka Pharmaceutical Co., Ltd. Solid dispersion comprising amorphous cilostazol

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