TWI276696B - Silicon monoxide sintered product and sputtering target comprising the same - Google Patents

Silicon monoxide sintered product and sputtering target comprising the same Download PDF

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Publication number
TWI276696B
TWI276696B TW92106660A TW92106660A TWI276696B TW I276696 B TWI276696 B TW I276696B TW 92106660 A TW92106660 A TW 92106660A TW 92106660 A TW92106660 A TW 92106660A TW I276696 B TWI276696 B TW I276696B
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Taiwan
Prior art keywords
cerium oxide
film
powder
sintered body
cerium
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Application number
TW92106660A
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Chinese (zh)
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TW200304954A (en
Inventor
Yoshitake Natsume
Tadashi Ogasawara
Munetoshi Watanabe
Kazuomi Azuma
Toshiharu Iwase
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Sumitomo Titanium Corp
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Publication of TW200304954A publication Critical patent/TW200304954A/en
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Publication of TWI276696B publication Critical patent/TWI276696B/en

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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40Metallic constituents or additives not added as binding phase
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
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    • C04B2235/42Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/421Boron
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428Silicon
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    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

A silicon monoxide sintered product prepared through forming a raw material powder which consists of 20 to 80 mass % of a silicon powder doped with boron, phosphorus or antimony and the balanced amount of silicon monoxide or a mixture of silicon monoxide and silicon dioxide, wherein the content of silicon monoxide in the mixture is 20% or more; and a sputtering target using the silicon monoxide sintered product. The sputtering target can be used for securing a satisfactorily high rate of film formation while providing a film reduced in variations of film characteristics, and thus can be widely and advantageously used for forming a silicon oxide thin film as a film for optical use, for example, for use in the prevention of gas permeation in a transparent plastic and the prevention of dissolution of Na from a glass and the protection of the surface of a lens.

Description

1276696 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關一氧化矽燒結體及其所成之濺鍍靶。更 詳細而言,係指爲防止透明塑膠透氣之光學用膜,以及防 止玻璃內鈉之溶出或鏡片表面之保護膜等所用之一氧化矽 燒結體及其所成之濺鍍靶。 【先前技術】 二氧化矽膜及SiOx ( 1<X<2 )膜等氧化矽系之薄膜, 因具有優異電絕緣性及高度機械性強度,因此應用爲各種 光學用零件之絕緣體;同時因其透明及對氣體之遮斷性良 好,也作爲透明塑膠防止氣體透過之保護膜。如此以二氧 化矽及SiOx爲基體材料製成薄膜時,矽,一氧化矽及二 氧化矽爲濺鍍靶,按反應性濺鍍法進行之。 這種反應性濺鍍法以兩極直流反應性濺鍍法以及高週 波反應性濺鍍法爲代表性方法運用。首先,兩極直流反應 性濺鍍法製成薄膜時,在減壓條件下,氬等惰性氣體與氮 或氧混合導入,外加直流高壓電於電極間,使之放電(輝 光放電)。 如此放電導致惰性氣體離子化,高速衝向陰極,使配 置於陰極上之物質(靶)飛出。這些飛出的物質遂堆積於 氮化物或氧化物等基體之表面,形成薄膜。 相對地高周波反應性濺鍍法,取代上述兩極直流反應 性濺鍍法外加之直流高壓電,施加50kHz以上之高週波電 1276696 (2) 壓,引起高週波輝光放電,與上述情形同樣於基體表面上 形成薄膜。 上述兩極直流反應性濺鍍法具有裝置及操作簡便’成 膜快速等優點,但靶是高電阻物質或絕緣體時,它不可能 因正離子而帶電濺鍍。 另一方面,上述高週波反應性濺鍍法利用高週波放電 ,因此絕緣體等作靶時,也能維持輝光放電,可以形成薄 膜。但是高週波反應性濺鍍法成膜速度較兩極直流反應性 濺鍍法慢,更甚者其電源構造複雜,導致設備製造費高, 電源之可靠性或維護性也令人不安。因此這種方法存有頗 能取得安定高周波電流之問題。 爲對付這樣的問題,嘗試以從來高週波反應性濺鍍法 得以成膜但具絕緣性之基體材料,按直流反應性濺鍍法使 之成膜。例如已知將主要材料(P L Z T、P Z T系)缺損其 中一部份(含氧成份),降低其電阻後,可以直流反應性 濺鍍法處理而成膜。 又有人提案,爲了降低燒結體之電阻,將導電性物質 與絕緣性物質混合後燒結,可獲得高導電性燒結體,適用 直流反應性濺鍍法(日本特開2 0 0 0 — 2 6 4 7 3 1號公報、特 許200 1 - 5 8 7 1號公報等)。 但是上述方法中’利用缺損氧氣使燒結體具備導電性 的方法,適用之物質有限,本發明的對象氧化矽系的材料 即不適用本法。另外所提將絕緣的物質與導電物質混合燒 結’獲得高導電性燒結體的方法,因混有不同材枓之燒結 -7 - 1276696 (3) 體,於濺鍍之際’不同材料同時成膜,膜特性發 甚至因爲是混合燒結體’縣鍍祀之電阻係數不均 成膜不安定等問題。 【發明內容】 如前所述,製造氧化砂系薄膜,以形7、_氧 氧化矽作爲濺鍍靶之反應性濺鍍法進行之。但是 晶之育成階段、摻雜硼、磷或銻,容易造成低電 會b 。 因此通常摻雜完成的矽粉用於直流濺鍍裝置 氣同時,能以直流反應性濺鍍法製成薄膜。相反 矽、二氧化矽的燒結體作爲濺鍍靶時,因材料無 以高週波反應性濺鍍法使之成膜。 利用摻雜之矽粉於直流反應性濺鍍法製成薄 膜速度高,但反應性濺鍍條件容易變化,導致已 化矽系薄膜特性產生偏差。況且高輸出功率投入 完成之矽發生容易破裂之問題。 此外形成SiOx(l<X<2)膜與二氧化矽膜時 組成附近之一氧化矽、二氧化矽作爲靶,因氧氣 入量減少,膜特性均質化變成可能。如前所述, 及二氧化矽導電性低,層絕緣物質,故需要用於 應性濺鍍裝置。因此與直流反應性濺鍍法比較, 緩慢,燒結體之大型化有困難。 本發明對於從來以反應性濺鍍法製造氧化石夕 生變化。 一,發生 化矽及二 當矽在單 阻化之可 ,導入氧 地一氧化 導電性, 膜,其成 成膜之氧 時,摻雜 ,利用膜 對大氣導 —氧化Ϊ夕 高週波反 成膜速度 系薄膜, -8- 1276696 (4) 在成膜之際所發生的問題加以鑑明;降低燒結體之電阻, 使能適用於直流反應性濺鍍裝置,確保成膜速度,也使薄 膜特性安定化;更因不用異種材料,單一成份之薄膜可以 製成,提供一氧化矽燒結體及其所成之濺鍍靶爲目的。 本發明人著眼於解決上述課題,有關氧化矽系薄膜之 成膜方法加以種種檢討結果,探明若能製成具有導電性之 一氧化矽燒結體,即可適用於直流電流濺鍍裝置,並能製 成氧化矽系薄膜。 據此結果,能確保成膜特性安定外,同時可提高成膜 速度,生產力向上,獲得良好成膜效率。 在上述的檢討中,得悉摻雜之矽粉末和一氧化矽粉末 或一氧化矽與二氧化矽之混合粉末,混合燒結之際,在一 氧化砂粉末的內部或表面之部份「一氧化砍」,熱分解成 「石夕十二氧化砂」。 換言之,就是絕緣體的一氧化矽,與完成強力摻雜矽 變成的導電體混合,經由燒結,熱分解之砂與混合之砂相 互作用,可獲得良好的導電性。 又,即使是將它們混合燒結,或矽、一氧化矽及二氧 化矽全用於反應濺鍍’因均屬同一成份氧化矽膜形成薄膜 之故,解決了向來混合燒結所發生諸如膜特性之變化,濺 鍍靶電阻率不均一等問題。 本發明基於上述的發現,主要完成如下所記(1 )至 (4 )之一氧化矽燒結體以及(5 )之由一氧化矽燒結體所 成之濺鍍靶。 -9- 1276696 (5) (1 )以摻雜有硼、磷或銻之矽粉,和一氧化 混合作爲原料粉末,進而製成產品爲特徵之一氧化 體。 (2 )以含有質量百分比20〜80 %摻雜有硼、磷 矽粉,和其餘之一氧化矽混合後作爲原料粉末而製 爲特徵之一氧化矽燒結體。 (3 )以含有質量百分比20〜80 %摻雜有硼、磷 矽粉,和其餘之一氧化矽與二氧化矽混合物(其中 矽含量20%以上),充分混合後作爲原料粉末而製 爲特徵之一氧化矽燒結體。 以上(1 )至(3 )項所記之一氧化矽燒結體, 結後的體密度至少95%。 (4)以電阻比 8 Ω · cm〜4 X 1 Ο·3 Ω · cm爲特 氧化矽燒結體。 (5 )具有以上(1 )至(4 )項所記之一氧化 體所製成爲特徵之一濺鍍靶。 【實施方式】 本發明以含有質量百分比20〜80%摻雜有硼、 爲特徵之一氧化矽燒結體。又其期望値是含量3 由含有摻雜之矽粉所製成的這種燒結體’因具有導 所以可作爲直流電源濺鍍裝置的靶。 在反應濺鍍之際,作爲濺鍍裝置之陰極(靶) 製成之薄膜具有減少偏差之特性’可獲得良好的濺! 矽粉末 矽燒結 或銻之 成產品 或銻之 一氧化 成產品 希望燒 徵之一 矽燒結 磷或銻 - 6 0 % 〇 電性, ,其所 度率。 -10- 1276696 (6) 由含有摻雜之矽粉,也有部份Si粉末彼此之 觸而顯示導電性之部分,但在混合燒結時,一氧化 部或表面SiO之一部份發生熱分解。 此時完成熱分解之矽內,具有導電性矽粉中所 元素如硼、磷或銻,因熱擴散作用而提高電氣傳導 於這一點,據發明人所做實驗結果,確認燒結溫度 燒結體的電阻率可急速下降。 本發明之燒結體,若所含摻雜之矽量未達20% 溫燒結也不能充分降低其電阻率。這是因爲被摻雜 粒子分佈過於粗放之故。因此摻雜之矽末最低含量: ,期望値是30%。 一方面摻雜之矽粉含量超過80%時,一氧化矽 消失,和矽靶同樣,所製成的薄膜產生膜特性偏差 出功率投入時容易割裂等缺點。因此摻雜之矽量最 爲80%,期望値是60%。 混合燒結之際,不混合一氧化矽,即使將摻雜 與二氧化矽粉末混合後燒結,也無法達成作爲靶所 95%體密度。 但是熱壓時存有一氧化矽粉末,則體密度能充 9 5 %以上。推測其因,乃是因爲一氧化矽昇華溫度 左右較低,熱壓同時變成玻璃狀,原料粉末中混合 化矽則浸透矽末與二氧化矽粉末的間隙,形成玻璃 體之緣故。 從以上所述可知本發明的燒結體之原料粉末, 間爲接 矽粉內 摻雜之 性。關 提局時 ,則高 矽粉的 爲20% 之特性 ,高輸 高含量 之石夕末 要求之 分達到 1 2 0 0 °C 的一氧 狀燒結 需要摻 -11 - 1276696 (7) 雜的矽末和一氧化矽粉末混合。但是爲調節靶的氧氣濃度 ’摻雜之矽末及一氧化矽粉末的混合原料中混進二氧化:5夕 粉末,也有效果。這種場合一氧化矽之特性未消失,爲謀 求革E的膜特性均一化,一氧化矽粉末的含量需達2 0 %以上 。期望値爲30%以上。 又此種一氧化砂燒結體,從燒結性的提高,導電特性 的均一化以及膜組成的均一化之觀點,期望原料粉末之平 均粒徑細小。一方面原料粉末過於微細,會發生混合不良 的問題。因此希望原料粉末的平均粒徑在1〜2 〇 μ m範圍內 〇 本發明之一氧化砂燒結體所含有的摻雜之5夕末,希望 其比電阻以0.01Ω · cm (局電阻率)至0.0001Ω · cm( 低電阻率)爲目標。因超過高電阻時無法確保充分的導電 性,低於低電阻則材料費提高之故。 摻雜硼、磷或銻之方法沒有特別限定,通常在矽單結 晶的育成階段採用的方法即可。硼、磷或銻的摻雜量以滿 足育成的矽單結晶如上所記的比電阻添加之。 本發明之一氧化矽燒結體,以一氧化矽爲主成分之粉 末’即一氧化矽粉末與一氧化矽及二氧化矽之混合粉末中 含有20 - 8 0%摻雜之矽粉,充分混合所得粉體施加 1000kg/cm2以上壓力,同時希望在1250〜1400 °C溫度下加 壓燒製而成。 燒結溫度過高,發生矽粉溶解,無法獲得良好的燒解 體;相反地’燒結溫度過低,燒結不充分,摻雜的硼磷元 -12 - 1276696 (8) 素之熱擴散無法充分。因此製造本發明之一氧化矽’期望 的燒結溫度爲1 2 5 0〜140(TC,但1 3 00〜1 400°C則較佳。 實例 以具體實施例用本發明如一氧化矽燒結體所得效果爲 例說明之。1276696 (1) Description of the Invention [Technical Field] The present invention relates to a niobium oxide sintered body and a sputtering target therefor. More specifically, it refers to an optical film for preventing the transparent plastic from being ventilated, and a yttria sintered body which is used for preventing dissolution of sodium in the glass or a protective film on the surface of the lens, and a sputtering target thereof. [Prior Art] A ruthenium oxide film such as a ruthenium dioxide film or a SiOx (1<X<2) film is used as an insulator for various optical parts because of its excellent electrical insulation and high mechanical strength; It is transparent and has good barrier properties to gases. It is also used as a protective film for transparent plastics to prevent gas permeation. When a film is formed by using ruthenium dioxide and SiOx as a base material, ruthenium, ruthenium oxide and ruthenium dioxide are sputtering targets, which are carried out by reactive sputtering. This reactive sputtering method is applied by a two-pole DC reactive sputtering method and a high-frequency reactive sputtering method. First, when a film is formed by a two-pole DC reactive sputtering method, an inert gas such as argon is mixed with nitrogen or oxygen under reduced pressure, and a direct current high voltage is applied between the electrodes to discharge (glow discharge). This discharge causes the inert gas to ionize and rushes toward the cathode at a high speed to fly the substance (target) disposed on the cathode. These flying substances are deposited on the surface of a substrate such as a nitride or an oxide to form a film. The relatively high-frequency reactive sputtering method replaces the DC high-voltage electricity applied by the above-mentioned two-pole DC reactive sputtering method, and applies a high-frequency electric wave of 1276696 (2) above 50 kHz, causing high-cycle glow discharge, which is the same as the above case. A film is formed on the surface. The above two-pole DC reactive sputtering method has the advantages of simple device and easy operation, and rapid film formation. However, when the target is a high-resistance substance or an insulator, it is unlikely to be charged and sputtered by positive ions. On the other hand, since the high-frequency reactive sputtering method utilizes high-frequency discharge, it is possible to maintain a glow discharge even when an insulator or the like is used as a target, and a thin film can be formed. However, the high-period reactive sputtering method is slower than the two-pole DC reactive sputtering method, and even more complicated in its power supply structure, resulting in high equipment manufacturing costs, and the reliability or maintainability of the power supply is also disturbing. Therefore, this method has the problem of achieving stable high-cycle current. In order to cope with such a problem, it has been attempted to form a film by a DC reactive sputtering method using a base material which is formed by a high-frequency reactive sputtering method and which is formed into an insulating film. For example, it is known that a main material (P L Z T, P Z T system) is deficient in a part (oxygen-containing component), and after reducing its electric resistance, it can be processed by DC reactive sputtering. In order to reduce the electric resistance of the sintered body, a conductive material and an insulating material are mixed and sintered to obtain a highly conductive sintered body, which is suitable for DC reactive sputtering (JP-200-256) 7 3 Bulletin No. 1, No. 200 1 - 5 8 7 1 , etc.). However, in the above method, the method of using the defective oxygen to make the sintered body electrically conductive is limited, and the material to be used in the present invention is not applicable to the material of the present invention. In addition, the method of obtaining a highly conductive sintered body by mixing the insulating material with the conductive material is carried out, and the sintered -7 - 1276696 (3) body of different materials is mixed, and the different materials are simultaneously formed at the time of sputtering. The film properties are caused by problems such as unevenness in the resistivity of the mixed sintered body's plated crucible. SUMMARY OF THE INVENTION As described above, an oxidized sand-based film is produced by a reactive sputtering method using a shape of 7, yttrium oxide oxide as a sputtering target. However, the stage of crystal growth, doping with boron, phosphorus or antimony, is likely to cause low electricity. Therefore, the doped powder which is usually doped is used for the DC sputtering apparatus gas, and the film can be formed by DC reactive sputtering. On the other hand, when a sintered body of cerium or cerium oxide is used as a sputtering target, the material is not formed by high-frequency reactive sputtering. The use of doped bismuth powder in a DC reactive sputtering method produces a high film speed, but the reactive sputtering conditions are easily changed, resulting in variations in the characteristics of the ruthenium-based film. Moreover, the high output power is discharged and the problem is easily broken. Further, when SiOx (l < X < 2) film and cerium oxide film are formed, one of cerium oxide and cerium oxide is used as a target, and the oxygenation amount is reduced, and the film characteristics are homogenized. As described above, and ruthenium dioxide have low conductivity and a layer of insulating material, it is required to be used in a reactive sputtering apparatus. Therefore, compared with the DC reactive sputtering method, it is slow, and it is difficult to enlarge the sintered body. The present invention is a versatile change in the production of oxidized stone by reactive sputtering. First, the occurrence of bismuth and bismuth in the mono-resistance can be introduced into the oxygen-oxidized conductivity, the film, which forms the film of oxygen, doping, using the membrane to the atmosphere to conduct oxidation Film speed film, -8- 1276696 (4) Identify the problems that occur during film formation; reduce the resistance of the sintered body, make it suitable for DC reactive sputtering devices, ensure the film formation speed, and also make the film The characteristics are stabilized; more than a different material, a single-component film can be produced to provide a cerium oxide sintered body and a sputtering target thereof. The inventors of the present invention have focused on solving the above-mentioned problems, and have conducted various review results on a film formation method of a ruthenium oxide-based film, and have found that it is applicable to a DC current sputtering apparatus if a sintered body of yttria having conductivity can be produced. Can be made into a ruthenium oxide film. According to this result, it is possible to ensure the film forming property to be stable, and at the same time, the film forming speed can be increased, the productivity is improved, and good film forming efficiency is obtained. In the above review, it was learned that the doped cerium powder and the cerium oxide powder or the mixed powder of cerium oxide and cerium oxide were mixed and sintered, and the inside or the surface of the oxidized sand powder was oxidized. Cut, the heat is broken down into "Shi Xi 12 oxidized sand." In other words, the cerium oxide of the insulator is mixed with the conductor which becomes strongly doped, and the thermal decomposition sand interacts with the mixed sand through sintering to obtain good conductivity. Moreover, even if they are mixed and sintered, or yttrium, lanthanum oxide and cerium oxide are all used for reactive sputtering, since the films of the same composition are formed by the ruthenium oxide film, the occurrence of the conventional mixed sintering, such as film properties, is solved. Change, sputtering target resistance is not uniform. The present invention is based on the above findings, and mainly completes a sputtering target of a cerium oxide sintered body of (1) to (4) and a sintered body of cerium oxide (5). -9- 1276696 (5) (1) A powder of boron, phosphorus or cerium doped with cerium, and a mixture of oxidizing and oxidizing is used as a raw material powder to form an oxide. (2) A cerium oxide sintered body characterized by being doped with boron, phosphorus cerium powder and containing the remaining cerium oxide in a mass percentage of 20 to 80% as a raw material powder. (3) It is characterized in that boron, phosphonium powder is doped with 20% to 80% by mass, and the other cerium oxide and cerium oxide mixture (in which the cerium content is 20% or more) is sufficiently mixed and used as a raw material powder. One of the yttria sintered bodies. The cerium oxide sintered body as recited in the above items (1) to (3) has a bulk density of at least 95% after the knot. (4) A sintered body of yttrium oxide having a specific resistance ratio of 8 Ω · cm to 4 X 1 Ο·3 Ω · cm. (5) A sputtering target having one of the characteristics described in the above items (1) to (4). [Embodiment] The present invention is a sintered body of cerium oxide characterized by being doped with boron in an amount of 20 to 80% by mass. Further, it is desirable that the sintered body of the content 3 which is made of the doped strontium powder can be used as a target of a direct current power source sputtering apparatus because of its conductivity. At the time of reactive sputtering, a film made of a cathode (target) as a sputtering device has a characteristic of reducing variation, and good sputtering can be obtained!矽 Powder 矽 Sintered or 锑 成 成 锑 锑 锑 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 希望 6 6 6 6 6 6 6 6 6 6 6 6 6 6 -10- 1276696 (6) A part containing doped yttrium powder and some of the Si powders are in contact with each other to exhibit conductivity, but in the case of mixed sintering, one part of the oxidized portion or the surface SiO is thermally decomposed. At this time, in the crucible where the thermal decomposition is completed, the elements in the conductive niobium powder such as boron, phosphorus or antimony are increased in electrical conductivity due to thermal diffusion. According to the experimental results of the inventors, the sintering temperature of the sintered body is confirmed. The resistivity can drop rapidly. In the sintered body of the present invention, if the amount of doping contained is less than 20%, the electrical resistivity cannot be sufficiently lowered. This is because the doped particles are too coarsely distributed. Therefore, the minimum content of doping at the end of the doping: is expected to be 30%. On the one hand, when the content of the tantalum powder is more than 80%, the ruthenium oxide disappears, and like the target of the ruthenium, the film produced has a defect in film characteristics, which is easy to be cut when the power is input. Therefore, the amount of doping is up to 80%, and the desired enthalpy is 60%. At the time of the mixed sintering, the cerium oxide was not mixed, and even if the doping was mixed with the cerium oxide powder and sintered, 95% of the bulk density as a target could not be achieved. However, if there is a cerium oxide powder during hot pressing, the bulk density can be charged above 95%. It is presumed that the reason is that the temperature of sublimation of nitric oxide is low, and the hot pressing becomes glassy at the same time, and the mixed cerium in the raw material powder is soaked in the gap between the powder and the cerium oxide powder to form a glass body. From the above, it is understood that the raw material powder of the sintered body of the present invention is doped in the tantalum powder. When the pick-up is made, the sorghum powder has a characteristic of 20%, and the high-transmission and high-content Shishi end requirement reaches 1 200 °C. The oxygen-like sintering needs to be mixed with -11 - 1276696 (7) The sputum is mixed with the cerium oxide powder. However, in order to adjust the oxygen concentration of the target, the mixed raw material of the doped cerium oxide and the cerium oxide powder is mixed with the dioxide: 5 powder, which is also effective. In this case, the characteristics of cerium oxide are not lost, and in order to uniformize the film properties of leather E, the content of cerium oxide powder needs to be more than 20%. The expectation is 30% or more. Further, in the sintered body of the oxidized sand, the average particle diameter of the raw material powder is desirably small from the viewpoints of improvement in sinterability, uniformization of electric conductivity, and uniformity of film composition. On the one hand, the raw material powder is too fine, and the problem of poor mixing may occur. Therefore, it is desirable that the average particle diameter of the raw material powder is in the range of 1 to 2 〇μm. At the end of the doping of the oxidized sand sintered body of the present invention, it is desirable that the specific resistance is 0.01 Ω · cm (local resistivity). The target is 0.0001 Ω · cm (low resistivity). When the high resistance is exceeded, sufficient conductivity cannot be ensured, and when the resistance is lower than the low resistance, the material cost is increased. The method of doping boron, phosphorus or antimony is not particularly limited, and it is usually a method employed in the breeding stage of monoclinic crystals. The doping amount of boron, phosphorus or antimony is added by the specific resistance as noted above for the singly grown single crystal. In the cerium oxide sintered body of the present invention, the powder containing cerium oxide as a main component, that is, the powder of cerium oxide and the mixed powder of cerium oxide and cerium oxide, contains 20 - 80% doped cerium powder, and is thoroughly mixed. The obtained powder is applied at a pressure of 1000 kg/cm 2 or more, and it is desired to be pressure-fired at a temperature of 1,250 to 1,400 ° C. When the sintering temperature is too high, the bismuth powder is dissolved, and a good burned body cannot be obtained; on the contrary, the sintering temperature is too low, the sintering is insufficient, and the thermal diffusion of the doped borophosphide-12-12276696 (8) is insufficient. Therefore, it is preferred to produce a cerium oxide of the present invention having a sintering temperature of from 1,250 to 140 (TC, but preferably from 1 300 to 1400 ° C. Examples of the present invention are obtained by using the present invention as a cerium oxide sintered body. The effect is illustrated as an example.

實例中使用摻雜硼,比電阻調整至0.0004 Ω · cm之 矽末。矽末及一氧化矽末微粉碎之平均粒徑達1 0 μ m以下 。讓一氧化矽末中矽末含量在10〜90%範圍內,其粉體施 加9.8MPa ( l〇〇kgf/cm2 )之壓力,並於1 400°C 2小時加壓 燒結後,以0 6inxt5mm機械加工,做成濺鍍靶。 測定按上記條件製成的各種燒結體之表面電阻率及密 度百分比,更進而利用這些燒結體作靶,使用直流電源反 應濺鍍法製造一氧化矽膜,測定單位時間內成膜厚度之濺 鍍速率,同時觀察膜特性偏差。In the example, boron is doped and the specific resistance is adjusted to 0.0004 Ω · cm. The average particle size of the finely pulverized powder at the end of the sputum and the end of the cerium oxide is less than 10 μm. The content of cerium in the end of cerium oxide is in the range of 10 to 90%, and the powder is applied with a pressure of 9.8 MPa (10 〇〇 kgf/cm 2 ), and after being pressed and sintered at 1 400 ° C for 2 hours, it is 0 6 in x t 5 mm. Machining, making a sputtering target. The surface resistivity and the percentage of density of various sintered bodies prepared under the above conditions were measured, and further, these sintered bodies were used as targets, and a tantalum oxide film was produced by DC power source reactive sputtering, and sputtering of a film thickness per unit time was measured. Rate while observing membrane property deviations.

表面電阻率以四端法測定,又密度比(體密度/理想 密度)以X 1 0 0 %表示。膜特性的偏差根據透過率及屈折率 的測定結果觀察。上述測定結果及觀察結果列於表一。 -13- 1276696 (9) 表 1 試驗次數 第1次 第2次 第3次 第4次 第5次 第6次 第7次 矽含量 (%) 10 20 30 50 80 90 30 二氧化矽 含量(%) 0 0 0 0 0 0 10 比電阻 (Ω · cm) 70 8 8 xlO·2 6 xlO·2 4 χΚΤ3 4 xlO'4 1 xlO'1 密度比 (%) 100 100 100 99 99 100 100 濺鍍速率 Δ 〇 ◎ ◎ ◎ 〇 ◎ 膜特性偏 差 〇 〇 〇 〇 〇 Δ 〇 根據表一的結果,按本發明的規定,得悉在一氧化石夕 粉末中摻雜矽末的含量,在20 - 80 %範圍內,濺鍍速率及 膜特性之偏差狀況均佳。 又作爲參考試驗,與上述同一條件下利用二氧化矽粉 末製作燒結體,機械加工所得之燒結體,並製成濺鍍靶, 使之形成二氧化矽薄膜。這時進行同樣的測定及觀察,確 認燒結體的表面電阻率1 Ο7 Ω · cm以上,濺鍍率不良,與 表一第一次試驗之情形~樣。 如上述,本發明之一氧化矽燒結體,其電阻率下降, 適用於直流反應性濺鍍裝置,除確保成膜速度外,同時確 -14- 1276696 (10) 保安定的膜特性。 產業上利用之可能性The surface resistivity is measured by the four-terminal method, and the density ratio (body density/ideal density) is represented by X 1 0 0 %. The variation in film properties was observed based on the measurement results of the transmittance and the yield. The above measurement results and observation results are shown in Table 1. -13- 1276696 (9) Table 1 Number of trials 1st 2nd 3rd 4th 5th 6th 7th 矽 content (%) 10 20 30 50 80 90 30 cerium oxide content (%) 0 0 0 0 0 0 10 specific resistance (Ω · cm) 70 8 8 xlO·2 6 xlO·2 4 χΚΤ3 4 xlO'4 1 xlO'1 Density ratio (%) 100 100 100 99 99 100 100 Sputtering rate Δ 〇 ◎ ◎ ◎ 〇 ◎ Membrane characteristic deviation 〇〇〇〇〇Δ 〇 According to the results of Table 1, according to the provisions of the present invention, it is known that the content of doping in the oxidized powder is in the range of 20 - 80%, the sputtering rate And the deviation of the film characteristics is good. Further, as a reference test, a sintered body was produced by using cerium oxide powder under the same conditions as described above, and the obtained sintered body was machined to form a sputtering target to form a ruthenium dioxide film. At this time, the same measurement and observation were carried out, and the surface resistivity of the sintered body was confirmed to be 1 Ο 7 Ω · cm or more, and the sputtering rate was poor, which was the same as in the first test of Table 1. As described above, the yttria sintered body of the present invention has a reduced electrical resistivity and is suitable for use in a DC reactive sputtering apparatus, in addition to ensuring the film forming speed, and at the same time ensuring the film properties of -14-1276696 (10). Industrial use possibility

應用本發明之一氧化矽燒結體,因燒結體之電阻率下 降,可適用於直流反應性濺鍍裝置,除確保成膜速度外, 也可促進成膜之膜特性安定化,更因不用異種材料,可以 製成單一成份之薄膜。因此利用這種一氧化矽燒結體及其 所成之濺鍍靶,保證獲得良好濺鍍率及少量膜特性偏差等 鍍反應。根據本成果,可以廣泛適用於能防止透明塑膠 胃m之光學用膜、防止玻璃鈉溶出及鏡片表面保護膜所用 氧化矽系薄膜之成膜。When the yttria sintered body of the present invention is applied, the resistivity of the sintered body is lowered, and it can be applied to a DC reactive sputtering apparatus. In addition to ensuring the film formation rate, the film properties of the film formation can be promoted, and the heterogeneous species are not used. The material can be made into a single component film. Therefore, such a niobium oxide sintered body and a sputtering target thereof are used to ensure a plating reaction such as a good sputtering rate and a small variation in film characteristics. According to the present invention, it can be widely applied to film formation for preventing the optical film of the transparent plastic stomach m, preventing the dissolution of the glass sodium and the yttrium oxide film for the surface protective film of the lens.

-15--15-

Claims (1)

J276696\ χ.J276696\ χ. 請專利範圍 第92 1 06660號專利申請案 中文申請專利範圍修择-车Patent scope No. 92 1 06660 Patent application Chinese patent scope selection - car 民圏兮曰 1 · 一種一氧化矽燒結體,其特徵爲使以質量%計,含 有20〜8 0%摻雜有硼、磷或銻之矽粉,其餘爲一氧化矽或 一氧化矽與二氧化矽之混合物所成,此混合物中一氧化矽 含量爲20%以上,在混合二氧化矽之情形,二氧化矽之含 量爲10%以下之原料粉末予以成形,此原料粉末之平均粒 徑爲1〜20μπι,燒結後之體密度95 %以上,且比電阻爲8 Ω · c m 〜4 X 1 (Γ3 Ω · c m 者。 2 · —種一氧化矽燒結體,其特徵爲使以質量%計, 含有20〜8 0%摻雜有硼、磷或銻之矽粉,其餘爲一氧化矽 所成之原料粉末予以充分混合成形,將所得粉體在 1 000kg/cm2以上之壓力加壓,同時在1 25 0〜1400°C之溫度 加壓燒成,燒結後之體密度95 %以上,上述原料粉末之平 均粒徑爲1〜20μιη者。 3·—種一氧化矽燒結體,其特徵爲使以質量%計,含 有20〜80 %摻雜有硼、磷或銻之矽粉,其餘爲—氧化矽或 一氧化矽與二氧化矽之混合物所成,此混合物中一氧化矽 含量爲20%以上之原料粉末予以充分混合而成形,將所得 粉體在l〇〇kg/cm2以上之壓力加壓,同時在1 25 0〜1 400。(: 之溫度加壓燒成,燒結後之體密度95%以上,該原料粉末 1276696 (2) 之平均粒徑爲1〜20μιη者。 4 .如申請專利範圍第2或3項之一氧化矽燒結體,其 比電阻爲 8Ω · cm〜4χ10'3Ω · cm。 5 . —種濺鍍靶,其特徵爲由如申請專利範圍第1〜3 項中任一項之一氧化矽燒結體所成。 6.如申請專利範圍第5項之濺鍍靶,其係使用於運用 直流電源之反應性濺鍍。圏兮曰1 · A niobium monoxide sintered body characterized in that it contains 20 to 80% of cerium powder doped with boron, phosphorus or cerium in the mass%, and the balance is cerium oxide or cerium oxide a mixture of cerium oxide having a cerium oxide content of 20% or more. In the case of mixing cerium oxide, a raw material powder having a cerium oxide content of 10% or less is formed, and an average particle diameter of the raw material powder is formed. It is 1 to 20 μm, the bulk density after sintering is 95% or more, and the specific resistance is 8 Ω · cm 〜 4 X 1 (Γ3 Ω · cm. 2 · a cerium oxide sintered body characterized by mass % The raw material powder containing 20 to 80% of boron, phosphorus or strontium doped with cerium oxide is thoroughly mixed and formed, and the obtained powder is pressurized at a pressure of 1 000 kg/cm 2 or more. At the same time, it is pressed and fired at a temperature of 1,500 to 1400 ° C, and the bulk density after sintering is 95% or more, and the average particle diameter of the raw material powder is 1 to 20 μm. 3·-one cerium oxide sintered body, characteristics thereof In order to obtain, by mass%, 20 to 80% of cerium powder doped with boron, phosphorus or cerium, The remainder is formed by a mixture of cerium oxide or cerium oxide and cerium oxide, and the raw material powder having a cerium oxide content of 20% or more in the mixture is sufficiently mixed and formed, and the obtained powder is above l〇〇kg/cm2. The pressure is pressurized and simultaneously pressed at a temperature of 1,500 to 1 400. (:: the body density after sintering is 95% or more, and the average particle diameter of the raw material powder 1276696 (2) is 1 to 20 μm. The yttria sintered body according to claim 2 or 3, wherein the specific resistance is 8 Ω · cm 〜 4 χ 10' 3 Ω · cm. 5 - a sputtering target, which is characterized by the first scope of the patent application. A sintered body of cerium oxide according to any one of the three items. 6. A sputtering target according to claim 5 of the patent application, which is used for reactive sputtering using a DC power source. -2--2-
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US7749406B2 (en) 2005-08-11 2010-07-06 Stevenson David E SiOx:Si sputtering targets and method of making and using such targets
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