200304954 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關一氧化矽燒結體及其所成之濺鍍靶。更 詳細而言，係指爲防止透明塑膠透氣之光學用保護膜，以 及防止玻璃內鈉之溶出或鏡片表面之保護膜等所用之一氧 化矽燒結體及其所成之濺鍍靶。 【先前技術】 二氧化矽膜及SiOx ( 1<X<2)膜等氧化矽系之薄膜， 因具有優異電絕緣性及高度機械性強度，因此應用爲各種 光學用零件之絕緣體；同時因其透明及對氣體之遮斷性良 好，也作爲透明塑膠防止氣體透過之保護膜。如此以二氧 化矽及SiOx爲基體材料製成薄膜時，矽，一氧化矽及二 氧化矽爲濺鍍靶，按反應性濺鍍法進行之。 這種反應性濺鍍法以兩極直流反應性濺鑛法以及高週 波反應性濺鍍法爲代表性方法運用。首先，兩極直流反應 性濺鍍法製成薄膜時，在減壓條件下，氬等惰性氣體與氮 或氧混合導入，外加直流高壓電於電極間，使之放電（輝 光放電）。 如此放電導致惰性氣體離子化，高速衝向陰極，使配 置於陰極上之物質（靶）飛出。這些飛出的物質遂堆積於 氮化物或氧化物等基體之表面，形成薄膜。 相對地高周波反應性濺鍍法，取代上述兩極直流反應 性濺鍍法外加之直流高壓電，施加5 0kHz以上之高週波電 (2) (2)200304954 壓’引起高週波輝光放電，與上述情形同樣於基體表面上 形成薄膜。 上述兩極直流反應性濺鍍法具有裝置及操作簡便，成 ' 膜快速等優點，但靶是高電阻物質或絕緣體時，它不可能 · 因正離子而帶電濺鍍。 另一方面，上述高週波反應性濺鍍法利用高週波放電 ’因此絕緣體等作靶時，也能維持輝光放電，可以形成薄 膜。但是高週波反應性濺鍍法成膜速度較兩極直流反應性 φ 濺鍍法慢’更甚者其電源構造複雜，導致設備製造費高， 電源之可靠性或維護性也令人不安。因此這種方法存有頗 能取得安定高周波電流之問題。 爲對付這樣的問題，嘗試以從來高週波反應性濺鑛法 得以成膜但具絕緣性之基體材料，按直流反應性濺鍍法使 之成膜。例如已知將主要材料（PLZT、ΡΖΤ系）缺損其 中一部份（含氧成份），降低其電阻後，可以直流反應性 濺鍍法處理而成膜。 · 又有人提案，爲了降低燒結體之電阻，將導電性物質 與絕緣性物質混合後燒結，可獲得高導電性燒結體，適用 直流反應性濺鍍法（日本特開2 0 0 0 - 2 6 4 7 3 1號公報、特 許200 1 — 5 8 7 1號公報等）。 但是上述方法中，利用缺損氧氣使燒結體具備導電性 · 的方法’適用之物質有限，本發明的對象氧化矽系的材料 . 即不適用本法。另外所提將絕緣的物質與導電物質混合燒 結，獲得高導電性燒結體的方法，因混有不同材枓之燒結 (3) (3)200304954 體，於濺鍍之際，不同材料同時成膜，膜特性發生變化。 甚至因爲是混合燒結體，濺鍍靶之電阻係數不均一，發生 成膜不安定等問題。 【發明內容】 如前所述，製造氧化矽系薄膜，以矽、一氧化矽及二 氧化矽作爲濺鍍靶之反應性濺鍍法進行之。但是當矽在單 晶之育成階段、吸附硼、磷或銻，容易造成低電阻化之可 能。 因此通常吸附完成的矽粉用於直流濺鍍裝置，導入氧 氣同時，能以直流反應性濺鍍法製成薄膜。相反地一氧化 矽、二氧化矽的燒結體作爲濺鍍靶時，因材料無導電性， 以高週波反應性濺鑛法使之成膜。 利用完成吸附之矽粉於直流反應性濺鑛法製成薄膜， 其成膜速度高，但反應性濺鍍條件容易變化，導致已成膜 之氧化矽系薄膜特性產生偏差。況且高輸出功率投入時， 吸附完成之矽發生容易破裂之問題。 此外形成SiOx ( 1<X<2 )膜與二氧化矽膜時，利用膜 組成附近之一氧化矽、二氧化矽作爲靶，因氧氣對大氣導 入量減少，膜特性均質化變成可能。如前所述，一氧化矽 及二氧化矽導電性低，層絕緣物質，故需要用於高週波反 應性濺鍍裝置。因此與直流反應性濺鍍法比較’成膜速度 緩慢，燒結體之大型化有困難。 本發明對於從來以反應性濺鎪法製造氧化矽系薄膜， -8- (4) (4)200304954 在成膜之際所發生的問題加以鑑明；降低燒結體之電阻， 使能適用於直流反應性濺鍍裝置，確保成膜速度，也使薄 膜特性安定化；更因不用異種材料，單一成份之薄膜可以 製成，提供一氧化矽燒結體及其所成之濺鍍靶爲目的。 ’ 本發明人著眼於解決上述課題，有關氧化矽系薄膜之 成膜方法加以種種檢討結果，探明若能製成具有導電性之 一氧化矽燒結體，即可適用於直流電流濺鍍裝置，並能製 成氧化矽系薄膜。 φ 據此結果，能確保成膜特性安定外，同時可提高成膜 速度，生產力向上，獲得良好成膜效率。 在上述的檢討中，得悉完成吸附之矽粉末和一氧化矽 粉末或一氧化矽與二氧化矽之混合粉末，混合燒結之際， 在一氧化矽粉末的內部或表面之部份「一氧化矽」，熱分 解成「砂十二氧化砂」。 換言之，就是絕緣體的一氧化矽，與完成強力吸附矽 變成的導電體混合，經由燒結，熱分解之矽與混合之矽相 ® 互作用，可獲得良好的導電性。 又，即使是將它們混合燒結，或矽、一氧化矽及二氧 化矽全用於反應濺鍍，因均屬同一成份氧化矽膜形成薄膜 之故，解決了向來混合燒結所發生諸如膜特性之變化，濺 鍍靶電阻率不均一等問題。 ~ 本發明基於上述的發現，主要完成如下所記（1 )至 (4 )之一氧化矽燒結體以及（5 )之由一氧化矽燒結體所 成之濺鍍靶。 -9 - (5) (5)200304954 (1 )以摻雜有硼、磷或銻之矽粉，和一氧化矽粉末 混合作爲原料粉末，進而製成產品爲特徵之一氧化矽燒結 體。 (2) 以含有質量百分比20〜80%摻雜有硼、磷或銻之 ’ 矽粉’和其餘之一氧化矽混合後作爲原料粉末而製成產品 爲特徵之一氧化矽燒結體。 (3) 以含有質量百分比20〜80%摻雜有硼、磷或銻之 矽粉，和其餘之一氧化矽與二氧化矽混合物（其中一氧化 φ 矽含量20%以上），充分混合後作爲原料粉末而製成產品 爲特徵之一氧化砂燒結體。 以上（1 )至（3 )項所記之一氧化矽燒結體，希望燒 結後的體密度至少95%。 (4) 以電阻比8Ω · cm〜4χ 10_3Ω · cm爲特徵之一氧 化矽燒結體。200304954 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to a silicon monoxide sintered body and a sputtering target formed therefrom. More specifically, it refers to a silicon oxide sintered body and a sputtering target formed therefor to prevent the transparent plastic from permeating the optical, and to prevent the dissolution of sodium in the glass or the protective film on the surface of the lens. [Prior technology] Silicon oxide films, such as silicon dioxide films and SiOx (1 < X < 2) films, are used as insulators for various optical parts because of their excellent electrical insulation and high mechanical strength; Transparent and good barrier to gas, it also serves as a protective film for transparent plastic to prevent gas from passing through. When a thin film is formed by using silicon dioxide and SiOx as a base material in this manner, silicon, silicon monoxide, and silicon dioxide are used as sputtering targets, and the sputtering is performed according to a reactive sputtering method. This reactive sputtering method is typified by a bipolar DC reactive sputtering method and a high frequency reactive sputtering method. First, when a bipolar DC reactive sputtering method is used to form a thin film, an inert gas such as argon is mixed with nitrogen or oxygen under reduced pressure, and a high-voltage direct current is applied between the electrodes to discharge it (glow discharge). This discharge causes the inert gas to ionize and rush towards the cathode at a high speed, so that the material (target) placed on the cathode flies out. These flying materials accumulate on the surface of a substrate such as nitride or oxide, forming a thin film. In contrast, the high-frequency reactive sputtering method replaces the above-mentioned two-pole direct-current reactive sputtering method with a high-voltage DC current and applies a high-frequency electric current of more than 50 kHz. (2) (2) 200304954 The high-frequency glow discharge caused by The situation is the same on the surface of the substrate. The above-mentioned bipolar DC reactive sputtering method has the advantages of simple device and operation, and rapid film formation. However, when the target is a high-resistance substance or insulator, it is impossible to be charged by positive ion sputtering. On the other hand, the above-mentioned high-frequency reactive sputtering method uses high-frequency discharge, so that even when an insulator or the like is used as a target, a glow discharge can be maintained and a thin film can be formed. However, the film formation speed of the high-frequency reactive sputtering method is slower than that of the bipolar DC reactive sputtering method. Moreover, the power supply structure is complicated, resulting in high equipment manufacturing costs, and the reliability or maintainability of the power supply is also disturbing. Therefore, this method has a problem that it can obtain stable high-frequency current. In order to cope with such a problem, an attempt was made to form a base material which was formed by a high-frequency reactive sputtering method but had an insulating property and a DC reactive sputtering method. For example, it is known that the main material (PLZT, PZT series) is missing a part of it (oxygen-containing component), and after reducing its resistance, it can be processed by DC reactive sputtering to form a film. · It has also been proposed that in order to reduce the resistance of the sintered body, a conductive material and an insulating material are mixed and sintered to obtain a highly conductive sintered body. A DC reactive sputtering method (Japanese Patent Application Laid-Open No. 2 0 0 0-2 6 4 7 3 Gazette No. 1, Patent 200 1 — 5 8 7 Gazette No. 1). However, in the above-mentioned method, the method of using the deficient oxygen to make the sintered body electrically conductive is limited. The applicable silicon oxide-based material of the present invention is not applicable to this method. In addition, the method for mixing and sintering an insulating substance and a conductive substance to obtain a highly conductive sintered body, because the sintering of different materials (3) (3) 200304954 body, at the same time sputtering, different materials are simultaneously formed The film characteristics change. Even because it is a mixed sintered body, the resistivity of the sputtering target is not uniform, and problems such as unstable film formation occur. [Summary of the Invention] As described above, a silicon oxide film is manufactured by a reactive sputtering method using silicon, silicon monoxide, and silicon dioxide as sputtering targets. However, when silicon is in the growth stage of a single crystal, boron, phosphorus, or antimony is adsorbed, which may cause a low resistance. Therefore, the adsorbed silicon powder is usually used in a DC sputtering device. At the same time as introducing oxygen, a thin film can be formed by a DC reactive sputtering method. Conversely, when a sintered body of silicon monoxide or silicon dioxide is used as a sputtering target, the material is non-conductive and is formed into a film by a high-frequency reactive sputtering method. The thin film is formed by using the adsorbed silicon powder in a DC reactive sputtering method. The film formation speed is high, but the reactive sputtering conditions are easy to change, which leads to deviations in the characteristics of the formed silicon oxide film. Moreover, when the high output power is input, the problem of easy cracking occurs in the completed silicon. In addition, when forming a SiOx (1 < X < 2) film and a silicon dioxide film, one of silicon oxide and silicon dioxide in the vicinity of the film composition is used as a target. Since the amount of oxygen introduced into the atmosphere is reduced, homogenization of the film characteristics becomes possible. As mentioned earlier, silicon monoxide and silicon dioxide have low conductivity and layer insulation materials, so they need to be used in high-frequency reactive sputtering equipment. Therefore, compared with the DC reactive sputtering method, the film formation speed is slow, and it is difficult to increase the size of the sintered body. In the present invention, the silicon oxide thin film has been manufactured by a reactive sputtering method. -8- (4) (4) 200304954 identifies problems that occur during film formation; reduces the resistance of the sintered body, and enables it to be applied to DC The reactive sputtering device ensures the film formation speed and stabilizes the thin film characteristics. Moreover, a single-component thin film can be made without using different materials, and the purpose is to provide a silicon oxide sintered body and a sputtering target formed by the same. '' The inventors focused on solving the above-mentioned problems, and performed various review results on the method of forming a silicon oxide thin film, and found out that if it can be made into a conductive silicon oxide sintered body, it can be applied to a DC current sputtering device. And can be made into silicon oxide film. φ Based on this result, it is possible to ensure stable film formation characteristics, increase film formation speed, increase productivity, and obtain good film formation efficiency. In the above review, it was learned that the adsorbed silicon powder and silicon monoxide powder or the mixed powder of silicon monoxide and silicon dioxide were mixed and sintered, and the part of the inside or surface of the silicon monoxide powder was "oxidized" "Silicon", thermal decomposition into "sand twelve oxide sand." In other words, it is the silicon monoxide of the insulator, which is mixed with the conductor that has strongly adsorbed the silicon, and through sintering, the thermally decomposed silicon interacts with the mixed silicon phase ® to obtain good conductivity. In addition, even if they are mixed and sintered, or silicon, silicon monoxide, and silicon dioxide are all used for reactive sputtering, they are all formed from silicon oxide films of the same composition, which solves problems such as film characteristics that have always occurred during mixed sintering. Changes, sputtering target uneven resistivity and other issues. Based on the above findings, the present invention mainly completes the silicon oxide sintered body of one of (1) to (4) and the sputtering target made of the silicon monoxide sintered body of (5). -9-(5) (5) 200304954 (1) A silicon oxide sintered body which is characterized by using silicon powder doped with boron, phosphorus or antimony and silicon oxide powder as a raw material powder. (2) A silicon oxide sintered body which is characterized in that a silicon dioxide doped with boron, phosphorus, or antimony containing 20 to 80% by mass and one of the other silicon oxides is mixed as a raw material powder. (3) 20 to 80% by mass of silicon powder doped with boron, phosphorus, or antimony, and one of the remaining silicon oxide and silicon dioxide mixture (of which the silicon dioxide content of silicon dioxide is more than 20%), as One of the characteristics is a sintered body of oxidized sand, which is produced by using raw material powder. It is desirable that the sintered silicon oxide body described in one of (1) to (3) above has a bulk density of at least 95% after sintering. (4) A sintered silicon oxide body characterized by a resistance ratio of 8Ω · cm to 4χ 10_3Ω · cm.
(5 )具有以上（1 )至（4 )項所記之一氧化矽燒結 體所製成爲特徵之一濺鍍靶。 I 【實施方式】 本發明以含有質量百分比20〜SO%摻雜有硼、磷或銻 爲特徵之一氧化矽燒結體。又其期望値是含量30〜60%。 由含有完成吸附之矽粉所製成的這種燒結體，因具有導電 性，所以可作爲直流電源濺鍍裝置的靶。 在反應濺鍍之際，作爲濺鍍裝置之陰極（靶），其所 製成之薄膜具有減少偏差之特性，可獲得良好的濺鍍率。 -10- (6) (6)200304954 由含有完成吸附之矽粉，也有部份顯示接觸導電性， 但混合燒結體，一氧化矽粉內部或表面的一部份發生熱分 解。 此時完成熱分解之矽內，具有導電性矽粉中所吸附之 元素如硼、磷或銻，因熱擴散作用而提高電氣傳導性。關 於這一點，據發明人所做實驗結果，確認燒結溫度提高時 燒結體的電阻率可急速下降。 本發明之燒結體，若所含完成吸附之矽量未達20%， 則高溫燒結也不能充分降低其電阻率。這是因爲被吸附矽 粉的粒子分佈過於粗放之故。因此完成吸附之矽末最低含 量爲20%，期望値是30%。 一方面完成吸附之矽粉含量超過8 0%時，一氧化矽之 特性消失，和矽靶同樣，所製成的薄膜產生膜特性偏差， 高輸出功率投入時容易割裂等缺點。因此完成吸附之矽量 最高含量爲80%，期望値是60%。 混合燒結之際，不混合一氧化矽，即使將完成吸附之 矽末與二氧化矽粉末混合後燒結，也無法達成作爲靶所要 求之9 5 %體密度。 但是熱壓時存有一氧化矽粉末，則體密度能充分達到 95%以上。推測其因，乃是因爲一氧化矽昇華溫度1 200°C 左右較低，熱壓同時變成玻璃狀，原料粉末中混合的一氧 化矽則浸透矽末與二氧化矽粉末的間隙，形成玻璃狀燒結 體之緣故。 從以上所述可知本發明的燒結體之原料粉末，需要完 -11 - (7) (7)200304954 成吸附的砂末和一氧化砂粉末混合。但是爲調節？E的氧氣 濃度，完成吸附之矽末及一氧化矽粉末的混合原料中混進 二氧化矽粉末，也有效果。這種場合一氧化矽之特性未消 失，爲謀求靶的膜特性均一化，一氧化矽粉末的含量需達 20%以上。期望値爲30%以上。 又此種一氧化矽燒結體，從燒結性的提高，導電特性 的均一化以及膜組成的均一化之觀點，期望原料粉末之平 均粒徑細小。一方面原料粉末過於微細，會發生混合不良 的問題。因此希望原料粉末的平均粒徑在1〜20μιη範圍內 〇 本發明之一氧化矽燒結體所含有的完成吸附之矽末， 希望其比電阻以0.01 Ω · cm (高電阻率）至0.0001 Ω · cm (低電阻率）爲目標。因超過高電阻時無法確保充分的 導電性，低於低電阻則材料費提高之故。 吸附硼、磷或銻之方法沒有特別限定，通常在矽單結 晶的育成階段採用的方法即可。硼、磷或銻的吸附量以滿 足育成的矽單結晶如上所記的比電阻添加之。 本發明之一氧化矽燒結體，以一氧化矽爲主成分之粉 末’即一氧化矽粉末與一氧化矽及二氧化矽之混合粉末中 含有20 - 80%完成吸附之矽粉，充分混合所得粉體施加 l〇〇〇kg/cm2以上壓力，同時希望在1250〜1400°C溫度下加 壓燒製而成。 燒結溫度過高，發生矽粉溶解，無法獲得良好的燒解 體；相反地’燒結溫度過低，燒結不充分，吸附的硼磷元 •12- (8) (8)200304954 素之熱擴散無法充分。因此製造本發明之一氧化矽，期望 的燒結溫度爲1 250〜1400°C，但1 300〜1400°C則較佳。 實例 以具體實施例用本發明如一氧化矽燒結體所得效果爲 例說明之。 實例中使用吸附硼，比電阻調整至0.0004 Ω · cm之 矽末。矽末及一氧化矽末微粉碎之平均粒徑達ΙΟμίη以下 。讓一氧化矽末中矽末含量在1〇〜90%範圍內，其粉體施 加9.8MPa ( 100kgf/cm2)之壓力，並於1400°C 2小時加壓 燒結後，以0 6inx 15mm機械加工，做成濺鍍靶。 測定按上記條件製成的各種燒結體之表面電阻率及密 度百分比’更進而利用這些燒結體作靶，使用直流電源反 應涵鍍法製造一氧化矽膜，測定單位時間內成膜厚度之濺 鍍速率’同時觀察膜特性偏差。 表面電阻率以四端法測定，又密度比（體密度/理想 密度）以X 100%表示。膜特性的偏差根據透過率及屈折率 的測定結果觀察。上述測定結果及觀察結果列於表一。 -13- 200304954 Ο) 表 1 試驗 次數 第1次 第2次 第3次 第4次 第5次 第6次 第7次 矽含 量（〇/〇) 10 20 30 50 80 90 30 二氧 化矽 含量 (%) 0 0 0 0 0 0 10 比電阻 (Ω · cm) 70 8 8 X 10·2 6 X 1〇-厂 4 X 1〇『 4 X l〇A 1 X 10·1 密度 比（％) 100 100 100 99 99 100 100 濺鍍 速率 Δ 〇 ◎ ◎ ◎ 〇 ◎ 膜特 性偏 差 〇 〇 〇 〇 〇 △ 〇 根據表一的結果，按本發明的規定，得悉在一氧化矽 粉末中完成吸附矽末的含量，在20 - 80%範圍內，濺鑛速 率及膜特性之偏差狀況均佳。 又作爲參考試驗，與上述同一條件下利用二氧化矽粉 末製作燒結體，機械加工所得之燒結體，並製成濺鍍靶’ 使之形成二氧化矽薄膜。這時進行同樣的測定及觀察，確 認燒結體的表面電阻率1〇7Ω · cm以上，濺鍍率不良，與 表一第一次試驗之情形一樣。 如上述，本發明之一氧化矽燒結體，其電阻率下降’ 適用於直流反應性濺鍍裝置，除確保成膜速度外，同時確 保安定的膜特性。 產業上利用之可能性 •14- (10) (10)200304954 應用本發明之一氧化矽燒結體，因燒結體之電阻率下 降，可適用於直流反應性濺鍍裝置，除確保成膜速度外， 也可促進成膜之膜特性安定化，更因不用異種材料，可以 製成單一成份之薄膜。因此利用這種一氧化矽燒結體及其 所成之濺鍍靶，保證獲得良好濺鍍率及少量膜特性偏差等 濺鍍反應。根據本成果，可以廣泛適用於能防止透明塑膠 透氣之光學保護膜、防止玻璃鈉溶出及鏡片表面保護膜所 用氧化矽系薄膜之成膜。(5) A sputtering target made of the silicon oxide sintered body described in any one of items (1) to (4) above. [Embodiment] The present invention is a silicon oxide sintered body characterized by containing 20 to SO% by mass doped with boron, phosphorus or antimony. The expected content of radon is 30 to 60%. The sintered body made of the silicon powder containing the adsorbed material is conductive and can be used as a target for a DC power sputtering device. In the case of reactive sputtering, as the cathode (target) of the sputtering device, the thin film produced has the characteristics of reducing variation, and a good sputtering rate can be obtained. -10- (6) (6) 200304954 The silicon powder containing the adsorbed material also shows contact conductivity, but when the sintered body is mixed, a part of the inside or surface of the silicon oxide powder is thermally decomposed. At this time, in the thermally decomposed silicon, elements such as boron, phosphorus, or antimony that are adsorbed in the conductive silicon powder can improve electrical conductivity due to thermal diffusion. Regarding this point, according to the results of experiments performed by the inventors, it was confirmed that the resistivity of the sintered body may decrease rapidly when the sintering temperature is increased. If the sintered body of the present invention contains less than 20% of the completed silicon, the high temperature sintering cannot sufficiently reduce the resistivity. This is because the particle distribution of the adsorbed silica powder is too coarse. Therefore, the minimum content of silicon that has been adsorbed is 20%, and the expected plutonium is 30%. On the one hand, when the content of silicon powder that has been adsorbed exceeds 80%, the characteristics of silicon monoxide disappear. Like the silicon target, the thin film produced has deviations in film characteristics and is easy to split when high output power is input. Therefore, the maximum amount of silicon to be adsorbed is 80%, and the expected radon is 60%. During mixed sintering, silicon monoxide is not mixed, and even if the adsorbed silicon powder and the silicon dioxide powder are mixed and sintered, the volume density of 95% required as a target cannot be achieved. However, when there is a silicon oxide powder during hot pressing, the bulk density can reach more than 95%. It is speculated that the reason is that the sublimation temperature of silicon monoxide is about 1 200 ° C, and the hot pressing becomes glassy at the same time. The silicon monoxide mixed in the raw material powder penetrates the gap between the silicon powder and the silicon dioxide powder to form a glassy shape. The reason for the sintered body. From the above, it can be seen that the raw material powder of the sintered body of the present invention needs to be mixed. But for regulation? The oxygen concentration of E is also effective when mixed with silicon dioxide powder in the mixed raw material of the adsorbed silicon powder and silicon monoxide powder. In this case, the characteristics of silicon monoxide have not disappeared. In order to achieve uniform target film characteristics, the content of silicon monoxide powder needs to be more than 20%. Expected 値 is more than 30%. In addition, such a silicon monoxide sintered body is desired to have a small average particle diameter of the raw material powder from the viewpoints of improvement in sinterability, uniformity of conductive characteristics, and uniformity of film composition. On the one hand, the raw material powder is too fine, which causes a problem of poor mixing. Therefore, it is desirable that the average particle diameter of the raw material powder is within the range of 1 to 20 μιη. The silicon oxide sintered body contained in the silicon oxide sintered body of the present invention has a specific resistance of 0.01 Ω · cm (high resistivity) to 0.0001 Ω · cm (low resistivity) is the target. When high resistance is exceeded, sufficient conductivity cannot be ensured. If it is lower than low resistance, the material cost increases. The method for adsorbing boron, phosphorus, or antimony is not particularly limited, and a method generally used at the growth stage of silicon single crystal may be used. The adsorption amount of boron, phosphorus, or antimony is added in such a way that the specific resistance of the silicon single crystals that have been developed is as described above. One of the silicon oxide sintered bodies of the present invention is a powder containing silicon monoxide as a main component, that is, a mixed powder of silicon monoxide powder, silicon monoxide and silicon dioxide, which contains 20-80% of the silicon powder that has been completely adsorbed. The powder is applied under a pressure of more than 1000 kg / cm2, and at the same time, it is desired to be fired under pressure at a temperature of 1250 ~ 1400 ° C. The sintering temperature is too high, the silicon powder dissolves, and a good calcined body cannot be obtained; on the contrary, the sintering temperature is too low, the sintering is insufficient, and the adsorbed boron and phosphorus element • 12- (8) (8) 200304954 The thermal diffusion of the element is not sufficient . Therefore, the desired sintering temperature for manufacturing the silicon oxide of the present invention is 1 250 to 1400 ° C, but 1 300 to 1400 ° C is more preferable. EXAMPLES The effect obtained by using the present invention, such as a silicon monoxide sintered body, will be described as an example. In the example, silicon powder was used, and the specific resistance was adjusted to 0.0004 Ω · cm. The average particle size of finely pulverized silicon powder and silicon monoxide powder is less than 10μίη. The silicon monoxide content in the silicon monoxide powder was in the range of 10 to 90%, and the powder was applied with a pressure of 9.8 MPa (100 kgf / cm2), and then pressed and sintered at 1400 ° C for 2 hours, and then machined at 0 6 inx 15 mm. To make a sputtering target. Measure the surface resistivity and density percentage of various sintered bodies made according to the conditions described above. Furthermore, using these sintered bodies as targets, a silicon monoxide film was produced using the direct current power source reaction method, and the sputtering thickness was measured in a unit time. Rate 'while observing deviations in film characteristics. The surface resistivity is measured by the four-terminal method, and the density ratio (bulk density / ideal density) is expressed as X 100%. Variations in film characteristics were observed from the measurement results of transmittance and flexion rate. The above measurement results and observation results are shown in Table 1. -13- 200304954 〇) Table 1 Number of tests 1st 2nd 3rd 4th 5th 6th 7th silicon content (0 / 〇) 10 20 30 50 80 90 30 Silicon dioxide content (%) 0 0 0 0 0 0 10 Specific resistance (Ω · cm) 70 8 8 X 10 · 2 6 X 1〇-factory 4 X 1〇 『4 X l〇A 1 X 10 · 1 Density ratio (%) 100 100 100 99 99 100 100 Sputtering rate Δ ◎ ◎ ◎ ◎ ◎ Film characteristics deviation 〇〇〇〇〇 △ 〇 According to the results of Table 1, according to the provisions of the present invention, it is learned that the content of silicon oxide powder in the completion of adsorption of silicon oxide in 20- In the range of 80%, the deviation of the ore spattering rate and the film characteristics are good. As a reference test, a sintered body was produced using silicon dioxide powder under the same conditions as above, and the sintered body obtained was machined to form a sputtering target to form a silicon dioxide film. At this time, the same measurement and observation were performed, and it was confirmed that the surface resistivity of the sintered body was 107 Ω · cm or more, and the sputtering rate was poor, as in the case of the first test in Table 1. As described above, the silicon oxide sintered body of the present invention has a reduced resistivity, and is suitable for a direct current reactive sputtering device. In addition to ensuring a film forming speed, the film characteristics are also secured. Possibility of industrial use • 14- (10) (10) 200304954 Applying one of the silicon oxide sintered bodies of the present invention can reduce the resistivity of the sintered bodies and can be applied to a DC reactive sputtering device. In addition to ensuring film formation speed It can also promote the stabilization of the film characteristics of the film formation, and because it does not use different materials, it can be made into a single-component film. Therefore, using this silicon monoxide sintered body and the sputtering target formed by it, it is ensured that a sputter reaction such as a good sputtering rate and a small deviation in film characteristics is obtained. Based on this achievement, it can be widely applied to the formation of optical protective films that prevent transparent plastics from permeable to air, prevent the dissolution of glass sodium, and the formation of silica-based films for lens surface protective films.
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