JP4293471B2 - 超臨界二酸化炭素処理を用いて基板を処理するための方法 - Google Patents

超臨界二酸化炭素処理を用いて基板を処理するための方法 Download PDF

Info

Publication number
JP4293471B2
JP4293471B2 JP2007519198A JP2007519198A JP4293471B2 JP 4293471 B2 JP4293471 B2 JP 4293471B2 JP 2007519198 A JP2007519198 A JP 2007519198A JP 2007519198 A JP2007519198 A JP 2007519198A JP 4293471 B2 JP4293471 B2 JP 4293471B2
Authority
JP
Japan
Prior art keywords
substrate
supercritical
fluid
solvent
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007519198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008505484A5 (enExample
JP2008505484A (ja
Inventor
グレン・ダブリュー・ゲイル
ジョゼフ・ティー・ヒルマン
ガニラ・ヤコブソン
ベントレー・パルマー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2008505484A publication Critical patent/JP2008505484A/ja
Publication of JP2008505484A5 publication Critical patent/JP2008505484A5/ja
Application granted granted Critical
Publication of JP4293471B2 publication Critical patent/JP4293471B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2007519198A 2004-06-30 2005-04-22 超臨界二酸化炭素処理を用いて基板を処理するための方法 Expired - Fee Related JP4293471B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/881,456 US7250374B2 (en) 2004-06-30 2004-06-30 System and method for processing a substrate using supercritical carbon dioxide processing
PCT/US2005/013885 WO2006007005A1 (en) 2004-06-30 2005-04-22 A system and method for processing a substrate using supercritical carbon dioxide processing

Publications (3)

Publication Number Publication Date
JP2008505484A JP2008505484A (ja) 2008-02-21
JP2008505484A5 JP2008505484A5 (enExample) 2008-06-26
JP4293471B2 true JP4293471B2 (ja) 2009-07-08

Family

ID=34980085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007519198A Expired - Fee Related JP4293471B2 (ja) 2004-06-30 2005-04-22 超臨界二酸化炭素処理を用いて基板を処理するための方法

Country Status (4)

Country Link
US (1) US7250374B2 (enExample)
JP (1) JP4293471B2 (enExample)
TW (1) TWI276167B (enExample)
WO (1) WO2006007005A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180122517A (ko) * 2017-05-02 2018-11-13 세메스 주식회사 챔버 세정 방법, 기판 처리 방법, 그리고 기판 처리 장치

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001255656A1 (en) * 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
JP2005516405A (ja) * 2002-01-25 2005-06-02 東京エレクトロン株式会社 超臨界二酸化炭素プロセス中の汚染物の形成を低減する方法
CN1296771C (zh) * 2002-03-04 2007-01-24 东京毅力科创株式会社 在晶片处理中低电介质材料的钝化方法
US7387868B2 (en) * 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US20050227187A1 (en) * 2002-03-04 2005-10-13 Supercritical Systems Inc. Ionic fluid in supercritical fluid for semiconductor processing
CN1642665A (zh) * 2002-03-22 2005-07-20 东京毅力科创株式会社 用超临界工艺清除杂质
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US7163380B2 (en) * 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060102208A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited System for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102204A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102282A1 (en) * 2004-11-15 2006-05-18 Supercritical Systems, Inc. Method and apparatus for selectively filtering residue from a processing chamber
US7462561B2 (en) * 2005-01-27 2008-12-09 David Lu Contact structure formed using supercritical cleaning fluid and ALCVD
US20060185694A1 (en) * 2005-02-23 2006-08-24 Richard Brown Rinsing step in supercritical processing
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
US20060225769A1 (en) * 2005-03-30 2006-10-12 Gentaro Goshi Isothermal control of a process chamber
US20060223899A1 (en) * 2005-03-30 2006-10-05 Hillman Joseph T Removal of porogens and porogen residues using supercritical CO2
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) * 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7789971B2 (en) * 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US20070000519A1 (en) * 2005-06-30 2007-01-04 Gunilla Jacobson Removal of residues for low-k dielectric materials in wafer processing
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
JP2007095863A (ja) * 2005-09-28 2007-04-12 Elpida Memory Inc 半導体シリコン基板の製造方法
DE102006015382A1 (de) * 2006-04-03 2007-10-04 Robert Bosch Gmbh Verfahren zur Behandlung von nanoskalige Poren aufweisendem Material
US20070240740A1 (en) * 2006-04-13 2007-10-18 Mcdermott Wayne T Cleaning of contaminated articles by aqueous supercritical oxidation
KR100829923B1 (ko) * 2006-08-30 2008-05-16 세메스 주식회사 스핀헤드 및 이를 이용하는 기판처리방법
US20080067651A1 (en) * 2006-09-15 2008-03-20 International Business Machines Corporation Method and apparatus for prevention of solder corrosion utilizing forced air
US7651890B2 (en) * 2006-09-15 2010-01-26 International Business Machines Corporation Method and apparatus for prevention of solder corrosion
US20080206949A1 (en) * 2007-02-28 2008-08-28 Semiconductor Technology Academic Research Center Apparatus for forming conductor, method for forming conductor, and method for manufacturing semiconductor device
JP4555881B2 (ja) * 2008-03-18 2010-10-06 株式会社日立国際電気 基板処理装置及び表示方法
US8961701B2 (en) * 2008-09-24 2015-02-24 Lam Research Corporation Method and system of drying a microelectronic topography
US8153533B2 (en) * 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
US9620410B1 (en) 2009-01-20 2017-04-11 Lam Research Corporation Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process
US20100184301A1 (en) * 2009-01-20 2010-07-22 Lam Research Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process
US9565766B2 (en) * 2011-10-07 2017-02-07 Intel Corporation Formation of DRAM capacitor among metal interconnect
KR20190005741A (ko) * 2017-07-07 2019-01-16 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법 및 금속 산화물 막의 형성 방법
WO2019067538A1 (en) * 2017-09-29 2019-04-04 Tokyo Electron Limited METHODS AND SYSTEMS FOR COATING A SUBSTRATE WITH A FLUID
JP7197396B2 (ja) * 2019-02-06 2022-12-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN112144042B (zh) * 2020-09-11 2021-09-24 大连理工大学 一种基于超临界流体脉冲的半导体薄膜可控生长系统
JP7620444B2 (ja) * 2021-02-16 2025-01-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Family Cites Families (321)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH251213A (fr) 1946-02-05 1947-10-15 Hanvag Ges Fuer Tech Vervollko Pompe à membrane.
US2625886A (en) 1947-08-21 1953-01-20 American Brake Shoe Co Pump
US2617719A (en) 1950-12-29 1952-11-11 Stanolind Oil & Gas Co Cleaning porous media
FR1499491A (fr) 1966-09-30 1967-10-27 Albert Handtmann Metallgiesser Robinet de passage et de fermeture, en particulier pour boisson
US3744660A (en) 1970-12-30 1973-07-10 Combustion Eng Shield for nuclear reactor vessel
US3968885A (en) 1973-06-29 1976-07-13 International Business Machines Corporation Method and apparatus for handling workpieces
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4029517A (en) 1976-03-01 1977-06-14 Autosonics Inc. Vapor degreasing system having a divider wall between upper and lower vapor zone portions
US4091643A (en) 1976-05-14 1978-05-30 Ama Universal S.P.A. Circuit for the recovery of solvent vapor evolved in the course of a cleaning cycle in dry-cleaning machines or plants, and for the de-pressurizing of such machines
GB1594935A (en) 1976-11-01 1981-08-05 Gen Descaling Co Ltd Closure for pipe or pressure vessel and seal therefor
DE2741024A1 (de) 1977-09-12 1979-03-22 Wilms Gmbh Membranpumpe
JPS5448172A (en) 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
US4367140A (en) 1979-11-05 1983-01-04 Sykes Ocean Water Ltd. Reverse osmosis liquid purification apparatus
JPS56142629A (en) 1980-04-09 1981-11-07 Nec Corp Vacuum device
US4355937A (en) 1980-12-24 1982-10-26 International Business Machines Corporation Low shock transmissive antechamber seal mechanisms for vacuum chamber type semi-conductor wafer electron beam writing apparatus
DE3112434A1 (de) 1981-03-28 1982-10-07 Depa GmbH, 4000 Düsseldorf Druckluftgetriebene doppelmembran-pumpe
JPS6117151Y2 (enExample) 1981-05-19 1986-05-26
US4682937A (en) 1981-11-12 1987-07-28 The Coca-Cola Company Double-acting diaphragm pump and reversing mechanism therefor
DE3145815C2 (de) 1981-11-19 1984-08-09 AGA Gas GmbH, 2102 Hamburg Verfahren zum Entfernen von ablösungsfähigen Materialschichten von beschichteten Gegenständen,
US4522788A (en) 1982-03-05 1985-06-11 Leco Corporation Proximate analyzer
FR2536433A1 (fr) 1982-11-19 1984-05-25 Privat Michel Procede et installation de nettoyage et decontamination particulaire de vetements, notamment de vetements contamines par des particules radioactives
JPS604007U (ja) 1983-06-20 1985-01-12 株式会社ヨコオ 伸縮多段ロツドアンテナ
US4626509A (en) 1983-07-11 1986-12-02 Data Packaging Corp. Culture media transfer assembly
US4865061A (en) 1983-07-22 1989-09-12 Quadrex Hps, Inc. Decontamination apparatus for chemically and/or radioactively contaminated tools and equipment
US4549467A (en) 1983-08-03 1985-10-29 Wilden Pump & Engineering Co. Actuator valve
GB8332394D0 (en) 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
JPS60246635A (ja) 1984-05-22 1985-12-06 Anelva Corp 自動基板処理装置
JPS60192333U (ja) 1984-05-31 1985-12-20 日本メクトロン株式会社 キ−ボ−ドスイツチ
US4693777A (en) 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4960140A (en) 1984-11-30 1990-10-02 Ishijima Industrial Co., Ltd. Washing arrangement for and method of washing lead frames
JPS61231166A (ja) 1985-04-08 1986-10-15 Hitachi Ltd 複合超高真空装置
US4788043A (en) 1985-04-17 1988-11-29 Tokuyama Soda Kabushiki Kaisha Process for washing semiconductor substrate with organic solvent
US4778356A (en) 1985-06-11 1988-10-18 Hicks Cecil T Diaphragm pump
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US5044871A (en) 1985-10-24 1991-09-03 Texas Instruments Incorporated Integrated circuit processing system
US4827867A (en) 1985-11-28 1989-05-09 Daikin Industries, Ltd. Resist developing apparatus
JPS62111442U (enExample) 1985-12-28 1987-07-16
JPS62125619U (enExample) 1986-01-31 1987-08-10
DE3608783A1 (de) 1986-03-15 1987-09-17 Telefunken Electronic Gmbh Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung
CA1287594C (en) 1986-04-04 1991-08-13 Miroslav Eror Method and apparatus for handling and processing wafer like materials
GB8709064D0 (en) 1986-04-28 1987-05-20 Varian Associates Wafer handling arm
US4670126A (en) 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
WO1987007309A1 (en) 1986-05-19 1987-12-03 Novellus Systems, Inc. Deposition apparatus with automatic cleaning means and method of use
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPS63157870A (ja) 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
JPS63252439A (ja) 1986-12-19 1988-10-19 アプライド　マテリアルズインコーポレーテッド 多チャンバの統合処理システム
US4759917A (en) 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic
JPS63256326A (ja) 1987-04-15 1988-10-24 Hitachi Ltd 真空チヤツクおよびその製造方法
JPS63303059A (ja) 1987-05-30 1988-12-09 Tokuda Seisakusho Ltd 真空処理装置
US4924892A (en) 1987-07-28 1990-05-15 Mazda Motor Corporation Painting truck washing system
DE3725611A1 (de) 1987-08-01 1989-02-09 Henkel Kgaa Verfahren zur gemeinsamen abtrennung von stoerelementen aus wertmetall-elektrolytloesungen
DE3725565A1 (de) 1987-08-01 1989-02-16 Peter Weil Verfahren und anlage zum entlacken von gegenstaenden mit einem tauchbehaelter mit loesungsmittel
US5105556A (en) 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
US4838476A (en) 1987-11-12 1989-06-13 Fluocon Technologies Inc. Vapour phase treatment process and apparatus
US4789077A (en) 1988-02-24 1988-12-06 Public Service Electric & Gas Company Closure apparatus for a high pressure vessel
JP2663483B2 (ja) 1988-02-29 1997-10-15 勝 西川 レジストパターン形成方法
JPH01246835A (ja) 1988-03-29 1989-10-02 Toshiba Corp ウエハ処理装置
US4823976A (en) 1988-05-04 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Quick actuating closure
US5224504A (en) 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5185296A (en) 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
DE3836731A1 (de) 1988-10-28 1990-05-03 Henkel Kgaa Verfahren zur abtrennung von stoerelementen aus wertmetall-elektrolytloesungen
JP2927806B2 (ja) 1988-11-30 1999-07-28 山形日本電気株式会社 半導体装置の製造装置
US5013366A (en) 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5051135A (en) 1989-01-30 1991-09-24 Kabushiki Kaisha Tiyoda Seisakusho Cleaning method using a solvent while preventing discharge of solvent vapors to the environment
JPH02209729A (ja) 1989-02-09 1990-08-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び異物除去装置
DE3904514C2 (de) 1989-02-15 1999-03-11 Oeffentliche Pruefstelle Und T Verfahren zum Reinigen bzw. Waschen von Bekleidungsteilen o. dgl.
DE4004111C2 (de) 1989-02-15 1999-08-19 Deutsches Textilforschzentrum Verfahren zur Vorbehandlung von textilen Flächengebilden oder Garnen
EP0409972B1 (en) 1989-02-16 1992-10-21 PAWLISZYN, Janusz B. Apparatus and method for delivering supercritical fluid
DE3906724C2 (de) 1989-03-03 1998-03-12 Deutsches Textilforschzentrum Verfahren zum Färben von textilen Substraten
DE3906735C2 (de) 1989-03-03 1999-04-15 Deutsches Textilforschzentrum Verfahren zum Bleichen
DE3906737A1 (de) 1989-03-03 1990-09-13 Deutsches Textilforschzentrum Verfahren zum mercerisieren, laugieren oder abkochen
US4879431A (en) 1989-03-09 1989-11-07 Biomedical Research And Development Laboratories, Inc. Tubeless cell harvester
US5169296A (en) 1989-03-10 1992-12-08 Wilden James K Air driven double diaphragm pump
US5213485A (en) 1989-03-10 1993-05-25 Wilden James K Air driven double diaphragm pump
US5068040A (en) 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5288333A (en) 1989-05-06 1994-02-22 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefore
DE3915586A1 (de) 1989-05-12 1990-11-15 Henkel Kgaa Verfahren zur zweiphasen-extraktion von metallionen aus feste metalloxide enthaltenden phasen, mittel und verwendung
JPH02304941A (ja) 1989-05-19 1990-12-18 Seiko Epson Corp 半導体装置の製造方法
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5062770A (en) 1989-08-11 1991-11-05 Systems Chemistry, Inc. Fluid pumping apparatus and system with leak detection and containment
US4983223A (en) 1989-10-24 1991-01-08 Chenpatents Apparatus and method for reducing solvent vapor losses
US5226441A (en) 1989-11-13 1993-07-13 Cmb Industries Backflow preventor with adjustable outflow direction
US5213619A (en) 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
US5169408A (en) 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
US5186594A (en) 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
US5217043A (en) 1990-04-19 1993-06-08 Milic Novakovic Control valve
ES2062595T3 (es) 1990-04-20 1994-12-16 Applied Materials Inc Aparato y metodo de una valvula de hendidura.
US5370741A (en) 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
DE4018464A1 (de) 1990-06-08 1991-12-12 Ott Kg Lewa Membran fuer eine hydraulisch angetriebene membranpumpe
US5071485A (en) 1990-09-11 1991-12-10 Fusion Systems Corporation Method for photoresist stripping using reverse flow
US5236669A (en) 1990-09-12 1993-08-17 E. I. Du Pont De Nemours And Company Pressure vessel
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
DE4106180A1 (de) 1990-10-08 1992-04-09 Dirk Dipl Ing Budde Doppel-membranpumpe
US5306350A (en) 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
US5143103A (en) 1991-01-04 1992-09-01 International Business Machines Corporation Apparatus for cleaning and drying workpieces
AT395951B (de) 1991-02-19 1993-04-26 Union Ind Compr Gase Gmbh Reinigung von werkstuecken mit organischen rueckstaenden
CH684402A5 (de) 1991-03-04 1994-09-15 Xorella Ag Wettingen Vorrichtung zum Verschieben und Schwenken eines Behälter-Verschlusses.
JPH04284648A (ja) 1991-03-14 1992-10-09 Fujitsu Ltd ウエーハ支持用ドライチャックラバー
US5195878A (en) 1991-05-20 1993-03-23 Hytec Flow Systems Air-operated high-temperature corrosive liquid pump
US5730874A (en) 1991-06-12 1998-03-24 Idaho Research Foundation, Inc. Extraction of metals using supercritical fluid and chelate forming legand
US5279615A (en) 1991-06-14 1994-01-18 The Clorox Company Method and composition using densified carbon dioxide and cleaning adjunct to clean fabrics
US5243821A (en) 1991-06-24 1993-09-14 Air Products And Chemicals, Inc. Method and apparatus for delivering a continuous quantity of gas over a wide range of flow rates
US5251776A (en) 1991-08-12 1993-10-12 H. William Morgan, Jr. Pressure vessel
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
US5213622A (en) 1991-10-11 1993-05-25 Air Products And Chemicals, Inc. Cleaning agents for fabricating integrated circuits and a process for using the same
DE9112761U1 (de) 1991-10-14 1992-04-09 Krones Ag Hermann Kronseder Maschinenfabrik, 8402 Neutraubling Gefäßverschließmaschine
US5221019A (en) 1991-11-07 1993-06-22 Hahn & Clay Remotely operable vessel cover positioner
KR930019861A (ko) 1991-12-12 1993-10-19 완다 케이. 덴슨-로우 조밀상 기체를 이용한 코팅 방법
US5550211A (en) 1991-12-18 1996-08-27 Schering Corporation Method for removing residual additives from elastomeric articles
US5190373A (en) 1991-12-24 1993-03-02 Union Carbide Chemicals & Plastics Technology Corporation Method, apparatus, and article for forming a heated, pressurized mixture of fluids
DE4200352A1 (de) 1992-01-09 1993-08-19 Deutsches Textilforschzentrum Verfahren zum aufbringen von substanzen auf fasermaterialien und textile substrate
DE4200498A1 (de) 1992-01-10 1993-07-15 Amann & Soehne Verfahren zum auftragen einer avivage
US5688879A (en) 1992-03-27 1997-11-18 The University Of North Carolina At Chapel Hill Method of making fluoropolymers
DE69334213T2 (de) 1992-03-27 2009-06-18 University Of North Carolina At Chapel Hill Verfahren zur Herstellung von Fluoropolymeren
US5240390A (en) 1992-03-27 1993-08-31 Graco Inc. Air valve actuator for reciprocable machine
US5404894A (en) 1992-05-20 1995-04-11 Tokyo Electron Kabushiki Kaisha Conveyor apparatus
US5313965A (en) 1992-06-01 1994-05-24 Hughes Aircraft Company Continuous operation supercritical fluid treatment process and system
JPH0613361A (ja) 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
US5401322A (en) 1992-06-30 1995-03-28 Southwest Research Institute Apparatus and method for cleaning articles utilizing supercritical and near supercritical fluids
US5267455A (en) 1992-07-13 1993-12-07 The Clorox Company Liquid/supercritical carbon dioxide dry cleaning system
US5285352A (en) 1992-07-15 1994-02-08 Motorola, Inc. Pad array semiconductor device with thermal conductor and process for making the same
US5368171A (en) 1992-07-20 1994-11-29 Jackson; David P. Dense fluid microwave centrifuge
US5746008A (en) 1992-07-29 1998-05-05 Shinko Electric Co., Ltd. Electronic substrate processing system using portable closed containers
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
US5339844A (en) 1992-08-10 1994-08-23 Hughes Aircraft Company Low cost equipment for cleaning using liquefiable gases
US5456759A (en) 1992-08-10 1995-10-10 Hughes Aircraft Company Method using megasonic energy in liquefied gases
US5316591A (en) 1992-08-10 1994-05-31 Hughes Aircraft Company Cleaning by cavitation in liquefied gas
DE4230485A1 (de) 1992-09-11 1994-03-17 Linde Ag Anlage zur Reinigung mit verflüssigten oder überkritischen Gasen
US5589224A (en) 1992-09-30 1996-12-31 Applied Materials, Inc. Apparatus for full wafer deposition
EP0591595A1 (en) 1992-10-08 1994-04-13 International Business Machines Corporation Molecular recording/reproducing method and recording medium
US5355901A (en) 1992-10-27 1994-10-18 Autoclave Engineers, Ltd. Apparatus for supercritical cleaning
US5337446A (en) 1992-10-27 1994-08-16 Autoclave Engineers, Inc. Apparatus for applying ultrasonic energy in precision cleaning
US5328722A (en) 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
JP2548062B2 (ja) 1992-11-13 1996-10-30 日本エー・エス・エム株式会社 縦型熱処理装置用ロードロックチャンバー
US5514220A (en) 1992-12-09 1996-05-07 Wetmore; Paula M. Pressure pulse cleaning
WO1994014240A1 (en) 1992-12-11 1994-06-23 The Regents Of The University Of California Microelectromechanical signal processors
KR100251873B1 (ko) 1993-01-21 2000-04-15 마쓰바 구니유키 종형 열처리 장치
NZ260144A (en) 1993-04-12 1995-10-26 Colgate Palmolive Co Cleaning composition; contains three liquid phases which merge at a tricritical point; use for removing tar or grease from articles
JPH07142333A (ja) 1993-06-29 1995-06-02 Kawasaki Steel Corp レジストの現像・リンス方法及びその装置
US5312882A (en) 1993-07-30 1994-05-17 The University Of North Carolina At Chapel Hill Heterogeneous polymerization in carbon dioxide
DE4429470A1 (de) 1993-08-23 1995-03-02 Ciba Geigy Ag Verfahren zur Verbesserung der Stabilität von Färbungen auf hydrophoben Textilmaterial
US5433334A (en) 1993-09-08 1995-07-18 Reneau; Raymond P. Closure member for pressure vessel
US5377705A (en) 1993-09-16 1995-01-03 Autoclave Engineers, Inc. Precision cleaning system
US5370740A (en) 1993-10-01 1994-12-06 Hughes Aircraft Company Chemical decomposition by sonication in liquid carbon dioxide
US5656097A (en) 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5417768A (en) 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
US5509431A (en) 1993-12-14 1996-04-23 Snap-Tite, Inc. Precision cleaning vessel
DE4344021B4 (de) 1993-12-23 2006-06-29 Deutsches Textilforschungszentrum Nord-West E.V. Färbung von beschlichteten textilen Flächengebilden aus Synthesefasermaterial in überkritischem Medien
TW274630B (enExample) 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5641887A (en) 1994-04-01 1997-06-24 University Of Pittsburgh Extraction of metals in carbon dioxide and chelating agents therefor
US5872257A (en) 1994-04-01 1999-02-16 University Of Pittsburgh Further extractions of metals in carbon dioxide and chelating agents therefor
DE69523208T2 (de) 1994-04-08 2002-06-27 Texas Instruments Inc., Dallas Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase
JP3320549B2 (ja) 1994-04-26 2002-09-03 岩手東芝エレクトロニクス株式会社 被膜除去方法および被膜除去剤
US5467492A (en) 1994-04-29 1995-11-21 Hughes Aircraft Company Dry-cleaning of garments using liquid carbon dioxide under agitation as cleaning medium
US5934856A (en) 1994-05-23 1999-08-10 Tokyo Electron Limited Multi-chamber treatment system
KR0137841B1 (ko) 1994-06-07 1998-04-27 문정환 식각잔류물 제거방법
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5637151A (en) 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
US5522938A (en) 1994-08-08 1996-06-04 Texas Instruments Incorporated Particle removal in supercritical liquids using single frequency acoustic waves
US5501761A (en) 1994-10-18 1996-03-26 At&T Corp. Method for stripping conformal coatings from circuit boards
EP0711864B1 (en) 1994-11-08 2001-06-13 Raytheon Company Dry-cleaning of garments using gas-jet agitation
DE69520687T2 (de) 1994-11-09 2001-08-23 R.R. Street & Co., Inc. Verfahren und system zur aufbereitung von unter druck stehenden flüssigen lösungsmitteln zur reinigung von substraten
US5505219A (en) 1994-11-23 1996-04-09 Litton Systems, Inc. Supercritical fluid recirculating system for a precision inertial instrument parts cleaner
DE4443778A1 (de) 1994-12-08 1996-06-20 Abel Gmbh & Co Doppelmembranpumpe
JPH08186140A (ja) 1994-12-27 1996-07-16 Toshiba Corp 樹脂封止型半導体装置の製造方法および製造装置
US5556497A (en) 1995-01-09 1996-09-17 Essef Corporation Fitting installation process
US5629918A (en) 1995-01-20 1997-05-13 The Regents Of The University Of California Electromagnetically actuated micromachined flap
DE69610652T2 (de) 1995-01-26 2001-05-10 Texas Instruments Inc., Dallas Verfahren zur Entfernung von Oberflächenkontamination
WO1996025760A1 (en) 1995-02-15 1996-08-22 Hitachi, Ltd. Method and device for manufacturing semiconductor
JPH08222508A (ja) 1995-02-15 1996-08-30 Fuji Photo Film Co Ltd 感光性組成物のパターン形成方法
EP0727711A3 (en) 1995-02-17 1997-04-09 Ocg Microelectronic Materials Photoresist compositions containing supercritical fluid fractionated polymeric resin binders
JP3277114B2 (ja) 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 陰画調レジスト像の作製方法
DE19506404C1 (de) 1995-02-23 1996-03-14 Siemens Ag Verfahren zum Freiätzen (Separieren) und Trocknen mikromechanischer Komponenten
US5683977A (en) 1995-03-06 1997-11-04 Lever Brothers Company, Division Of Conopco, Inc. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
WO1996027704A1 (en) 1995-03-06 1996-09-12 Unilever N.V. Dry cleaning system using densified carbon dioxide and a surfactant adjunct
US5676705A (en) 1995-03-06 1997-10-14 Lever Brothers Company, Division Of Conopco, Inc. Method of dry cleaning fabrics using densified carbon dioxide
US5681398A (en) 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
JPH08264500A (ja) 1995-03-27 1996-10-11 Sony Corp 基板の洗浄方法
US5644855A (en) 1995-04-06 1997-07-08 Air Products And Chemicals, Inc. Cryogenically purged mini environment
JPH08306632A (ja) 1995-04-27 1996-11-22 Shin Etsu Handotai Co Ltd 気相エピタキシャル成長装置
US6097015A (en) 1995-05-22 2000-08-01 Healthbridge, Inc. Microwave pressure vessel and method of sterilization
JP3983831B2 (ja) 1995-05-30 2007-09-26 シグマメルテック株式会社 基板ベーキング装置及び基板ベーキング方法
JPH08330266A (ja) 1995-05-31 1996-12-13 Texas Instr Inc <Ti> 半導体装置等の表面を浄化し、処理する方法
US6454945B1 (en) 1995-06-16 2002-09-24 University Of Washington Microfabricated devices and methods
WO1997000442A1 (en) 1995-06-16 1997-01-03 The University Of Washington Microfabricated differential extraction device and method
JP2676334B2 (ja) 1995-07-31 1997-11-12 住友重機械工業株式会社 ロボットアーム
US6239038B1 (en) 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US5783082A (en) 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5955140A (en) 1995-11-16 1999-09-21 Texas Instruments Incorporated Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates
US5736425A (en) 1995-11-16 1998-04-07 Texas Instruments Incorporated Glycol-based method for forming a thin-film nanoporous dielectric
US6037277A (en) 1995-11-16 2000-03-14 Texas Instruments Incorporated Limited-volume apparatus and method for forming thin film aerogels on semiconductor substrates
US5807607A (en) 1995-11-16 1998-09-15 Texas Instruments Incorporated Polyol-based method for forming thin film aerogels on semiconductor substrates
US6159295A (en) 1995-11-16 2000-12-12 Texas Instruments Incorporated Limited-volume apparatus for forming thin film aerogels on semiconductor substrates
US5679169A (en) 1995-12-19 1997-10-21 Micron Technology, Inc. Method for post chemical-mechanical planarization cleaning of semiconductor wafers
JPH09213772A (ja) 1996-01-30 1997-08-15 Dainippon Screen Mfg Co Ltd 基板保持装置
US5804607A (en) 1996-03-21 1998-09-08 International Business Machines Corporation Process for making a foamed elastomeric polymer
US5726211A (en) 1996-03-21 1998-03-10 International Business Machines Corporation Process for making a foamed elastometric polymer
JP3955340B2 (ja) 1996-04-26 2007-08-08 株式会社神戸製鋼所 高温高圧ガス処理装置
DK9600149U3 (da) 1996-05-01 1997-09-12 Moerch & Soenner A S Dækselaggregat
US5766367A (en) 1996-05-14 1998-06-16 Sandia Corporation Method for preventing micromechanical structures from adhering to another object
JPH09303557A (ja) 1996-05-21 1997-11-25 Kobe Steel Ltd 高圧容器の密封装置
US5618751A (en) 1996-05-23 1997-04-08 International Business Machines Corporation Method of making single-step trenches using resist fill and recess
US6203582B1 (en) 1996-07-15 2001-03-20 Semitool, Inc. Modular semiconductor workpiece processing tool
US5868856A (en) 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
US5669251A (en) 1996-07-30 1997-09-23 Hughes Aircraft Company Liquid carbon dioxide dry cleaning system having a hydraulically powered basket
US5868862A (en) 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
US5706319A (en) 1996-08-12 1998-01-06 Joseph Oat Corporation Reactor vessel seal and method for temporarily sealing a reactor pressure vessel from the refueling canal
US5881577A (en) 1996-09-09 1999-03-16 Air Liquide America Corporation Pressure-swing absorption based cleaning methods and systems
US5798438A (en) 1996-09-09 1998-08-25 University Of Massachusetts Polymers with increased order
US5908510A (en) 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5797719A (en) 1996-10-30 1998-08-25 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5888050A (en) 1996-10-30 1999-03-30 Supercritical Fluid Technologies, Inc. Precision high pressure control assembly
US5725987A (en) 1996-11-01 1998-03-10 Xerox Corporation Supercritical processes
US5714299A (en) 1996-11-04 1998-02-03 Xerox Corporation Processes for toner additives with liquid carbon dioxide
JPH10144757A (ja) 1996-11-08 1998-05-29 Dainippon Screen Mfg Co Ltd 基板処理システム
JPH10144650A (ja) 1996-11-11 1998-05-29 Mitsubishi Electric Corp 半導体材料の洗浄装置
US5906866A (en) 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
JP3437734B2 (ja) 1997-02-26 2003-08-18 富士通株式会社 製造装置
US5896870A (en) 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
JPH10261687A (ja) 1997-03-18 1998-09-29 Furontetsuku:Kk 半導体等製造装置
JP4246804B2 (ja) 1997-03-26 2009-04-02 株式会社神戸製鋼所 加熱・加圧処理装置
JPH10288158A (ja) 1997-04-10 1998-10-27 Kobe Steel Ltd ピストン式ガス圧縮機及びガス圧縮設備
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
JP3764247B2 (ja) 1997-05-27 2006-04-05 株式会社神戸製鋼所 板状物の加圧処理装置
TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6164297A (en) 1997-06-13 2000-12-26 Tokyo Electron Limited Cleaning and drying apparatus for objects to be processed
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
TW524873B (en) 1997-07-11 2003-03-21 Applied Materials Inc Improved substrate supporting apparatus and processing chamber
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
US5893756A (en) 1997-08-26 1999-04-13 Lsi Logic Corporation Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing
JP3194036B2 (ja) 1997-09-17 2001-07-30 東京エレクトロン株式会社 乾燥処理装置及び乾燥処理方法
US6056008A (en) 1997-09-22 2000-05-02 Fisher Controls International, Inc. Intelligent pressure regulator
US6235634B1 (en) 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US5872061A (en) 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6005226A (en) 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
US5904737A (en) 1997-11-26 1999-05-18 Mve, Inc. Carbon dioxide dry cleaning system
JPH11200035A (ja) 1998-01-19 1999-07-27 Anelva Corp スパッタ化学蒸着複合装置
US5934991A (en) 1998-02-01 1999-08-10 Fortrend Engineering Corporation Pod loader interface improved clean air system
US6067728A (en) 1998-02-13 2000-05-30 G.T. Equipment Technologies, Inc. Supercritical phase wafer drying/cleaning system
US6122566A (en) 1998-03-03 2000-09-19 Applied Materials Inc. Method and apparatus for sequencing wafers in a multiple chamber, semiconductor wafer processing system
US6244121B1 (en) 1998-03-06 2001-06-12 Applied Materials, Inc. Sensor device for non-intrusive diagnosis of a semiconductor processing system
US6453924B1 (en) 2000-07-24 2002-09-24 Advanced Technology Materials, Inc. Fluid distribution system and process, and semiconductor fabrication facility utilizing same
WO1999049998A1 (en) 1998-03-30 1999-10-07 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
KR100452542B1 (ko) 1998-04-14 2004-10-12 가부시끼가이샤가이죠 세정물 건조장치 및 건조방법
US6017820A (en) 1998-07-17 2000-01-25 Cutek Research, Inc. Integrated vacuum and plating cluster system
US6085935A (en) 1998-08-10 2000-07-11 Alliance Laundry Systems Llc Pressure vessel door operating apparatus
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
JP2000106358A (ja) 1998-09-29 2000-04-11 Mitsubishi Electric Corp 半導体製造装置および半導体基板の処理方法
US6110232A (en) 1998-10-01 2000-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for preventing corrosion in load-lock chambers
US6449428B2 (en) 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
DE19860084B4 (de) 1998-12-23 2005-12-22 Infineon Technologies Ag Verfahren zum Strukturieren eines Substrats
US6344174B1 (en) 1999-01-25 2002-02-05 Mine Safety Appliances Company Gas sensor
EP1024524A2 (en) 1999-01-27 2000-08-02 Matsushita Electric Industrial Co., Ltd. Deposition of dielectric layers using supercritical CO2
US6305677B1 (en) 1999-03-30 2001-10-23 Lam Research Corporation Perimeter wafer lifting
US6241825B1 (en) 1999-04-16 2001-06-05 Cutek Research Inc. Compliant wafer chuck
US6520767B1 (en) 1999-04-26 2003-02-18 Supercritical Combusion Corporation Fuel delivery system for combusting fuel mixtures
US6128830A (en) 1999-05-15 2000-10-10 Dean Bettcher Apparatus and method for drying solid articles
US6245849B1 (en) 1999-06-02 2001-06-12 Sandia Corporation Fabrication of ceramic microstructures from polymer compositions containing ceramic nanoparticles
US6436824B1 (en) 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene
US6487994B2 (en) 1999-07-23 2002-12-03 Supercritical Combustion Corporation Sub-critical water-fuel composition and combustion system
AU6893600A (en) 1999-08-05 2001-03-05 S. C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6334266B1 (en) 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
KR100791864B1 (ko) 1999-08-05 2008-01-07 동경 엘렉트론 주식회사 세정 기구, 세정 시스템, 처리 기구 및 세정 방법
US6508259B1 (en) 1999-08-05 2003-01-21 S.C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6180533B1 (en) * 1999-08-10 2001-01-30 Applied Materials, Inc. Method for etching a trench having rounded top corners in a silicon substrate
US6251250B1 (en) 1999-09-03 2001-06-26 Arthur Keigler Method of and apparatus for controlling fluid flow and electric fields involved in the electroplating of substantially flat workpieces and the like and more generally controlling fluid flow in the processing of other work piece surfaces as well
US6228563B1 (en) 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6355072B1 (en) 1999-10-15 2002-03-12 R.R. Street & Co. Inc. Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
CA2387341A1 (en) 1999-11-02 2001-05-10 Tokyo Electron Limited Method and apparatus for supercritical processing of multiple workpieces
US6286231B1 (en) 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
WO2001055628A1 (en) 2000-01-26 2001-08-02 Tokyo Electron Limited High pressure lift valve for use in semiconductor processing environment
WO2001074538A1 (en) 2000-03-13 2001-10-11 The Deflex Llc Dense fluid spray cleaning process and apparatus
WO2001068279A2 (en) 2000-03-13 2001-09-20 The Deflex Llc Dense fluid cleaning centrifugal phase shifting separation process and apparatus
US6558475B1 (en) 2000-04-10 2003-05-06 International Business Machines Corporation Process for cleaning a workpiece using supercritical carbon dioxide
EP1425115A4 (en) 2000-04-18 2006-03-01 S C Fluids Inc SUPERCRITICAL FLUID DELIVERY AND RECOVERY SYSTEM FOR PROCESSING SEMICONDUCTOR WAFERS
AU2001255656A1 (en) 2000-04-25 2001-11-07 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
AU2001257564A1 (en) 2000-05-08 2001-11-20 Tokyo Electron Limited Method and apparatus for agitation of workpiece in high pressure environment
WO2001094782A2 (en) 2000-06-02 2001-12-13 Tokyo Electron Limited Dual diaphragm pump
US6319858B1 (en) 2000-07-11 2001-11-20 Nano-Architect Research Corporation Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film
JP4724353B2 (ja) 2000-07-26 2011-07-13 東京エレクトロン株式会社 半導体基板のための高圧処理チャンバー
AU2001279136A1 (en) 2000-07-31 2002-02-13 The Deflex Corporation Near critical and supercritical ozone substrate treatment and apparatus for same
WO2002009894A2 (en) 2000-08-01 2002-02-07 The Deflex Llc Gas-vapor cleaning method and system therefor
AU2000266442A1 (en) 2000-08-14 2002-02-25 Tokyo Electron Limited Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
AU2001288402A1 (en) 2000-08-23 2002-03-04 Deflex Llc Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays
NZ524685A (en) 2000-09-07 2004-10-29 Cmb Ind Short-length reduced-pressure backflow preventor
US6388317B1 (en) 2000-09-25 2002-05-14 Lockheed Martin Corporation Solid-state chip cooling by use of microchannel coolant flow
US6418956B1 (en) 2000-11-15 2002-07-16 Plast-O-Matic Valves, Inc. Pressure controller
US6596093B2 (en) 2001-02-15 2003-07-22 Micell Technologies, Inc. Methods for cleaning microelectronic structures with cyclical phase modulation
US6905555B2 (en) 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
US6561220B2 (en) 2001-04-23 2003-05-13 International Business Machines, Corp. Apparatus and method for increasing throughput in fluid processing
US6852194B2 (en) 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
US6561767B2 (en) 2001-08-01 2003-05-13 Berger Instruments, Inc. Converting a pump for use in supercritical fluid chromatography
US6561481B1 (en) 2001-08-13 2003-05-13 Filonczuk Michael A Fluid flow control apparatus for controlling and delivering fluid at a continuously variable flow rate
US20040040660A1 (en) 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
US6550484B1 (en) 2001-12-07 2003-04-22 Novellus Systems, Inc. Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing
JP2005516405A (ja) 2002-01-25 2005-06-02 東京エレクトロン株式会社 超臨界二酸化炭素プロセス中の汚染物の形成を低減する方法
JP2003224099A (ja) 2002-01-30 2003-08-08 Sony Corp 表面処理方法
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
WO2003070846A2 (en) 2002-02-15 2003-08-28 Supercritical Systems Inc. Drying resist with a solvent bath and supercritical co2
CN1296771C (zh) 2002-03-04 2007-01-24 东京毅力科创株式会社 在晶片处理中低电介质材料的钝化方法
US6953654B2 (en) 2002-03-14 2005-10-11 Tokyo Electron Limited Process and apparatus for removing a contaminant from a substrate
US6521466B1 (en) 2002-04-17 2003-02-18 Paul Castrucci Apparatus and method for semiconductor wafer test yield enhancement
US20030196679A1 (en) 2002-04-18 2003-10-23 International Business Machines Corporation Process and apparatus for contacting a precision surface with liquid or supercritical carbon dioxide
JP4026750B2 (ja) 2002-04-24 2007-12-26 東京エレクトロン株式会社 基板処理装置
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US20040011386A1 (en) 2002-07-17 2004-01-22 Scp Global Technologies Inc. Composition and method for removing photoresist and/or resist residue using supercritical fluids
US6722642B1 (en) 2002-11-06 2004-04-20 Tokyo Electron Limited High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism
US6913968B2 (en) * 2003-07-30 2005-07-05 International Business Machines Corporation Method and structure for vertical DRAM devices with self-aligned upper trench shaping
US7345000B2 (en) 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US7553769B2 (en) 2003-10-10 2009-06-30 Tokyo Electron Limited Method for treating a dielectric film
JP2005187879A (ja) 2003-12-25 2005-07-14 Tokyo Electron Ltd 成膜装置および成膜方法
US20050216228A1 (en) 2004-03-15 2005-09-29 Tokyo Electron Limited Method and system for correcting a fault in a semiconductor manufacturing system
US20050203789A1 (en) 2004-03-15 2005-09-15 Tokyo Electron Limited Activity management system and method of using
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180122517A (ko) * 2017-05-02 2018-11-13 세메스 주식회사 챔버 세정 방법, 기판 처리 방법, 그리고 기판 처리 장치
KR102030056B1 (ko) * 2017-05-02 2019-11-11 세메스 주식회사 챔버 세정 방법, 기판 처리 방법, 그리고 기판 처리 장치

Also Published As

Publication number Publication date
US20060003592A1 (en) 2006-01-05
TW200610044A (en) 2006-03-16
WO2006007005A1 (en) 2006-01-19
JP2008505484A (ja) 2008-02-21
TWI276167B (en) 2007-03-11
US7250374B2 (en) 2007-07-31

Similar Documents

Publication Publication Date Title
JP4293471B2 (ja) 超臨界二酸化炭素処理を用いて基板を処理するための方法
TWI455203B (zh) 開孔之硬遮罩及藉由開孔之硬遮罩施行之蝕刻輪廓控制
JP3515521B2 (ja) 半導体ウェーハなどのワークピースの処理方法および処理装置
US20060130966A1 (en) Method and system for flowing a supercritical fluid in a high pressure processing system
CN101479831B (zh) 利用弯液面的蚀刻后晶片表面清洁
JP5424848B2 (ja) 半導体基板の表面処理装置及び方法
KR20020093896A (ko) 물체의 미세구조로부터 잔사를 제거하는 방법 및 장치
US7291565B2 (en) Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
KR100505693B1 (ko) 미세 전자 소자 기판으로부터 포토레지스트 또는 유기물을세정하는 방법
TWI272693B (en) Method of treatment of porous dielectric films to reduce damage during cleaning
JP4848376B2 (ja) 高圧処理システム用超臨界流体均質化方法及びシステム
TW200820338A (en) Semiconductor process and chamber used
US7582181B2 (en) Method and system for controlling a velocity field of a supercritical fluid in a processing system
JP2004186530A (ja) 洗浄装置及び洗浄方法
US7524383B2 (en) Method and system for passivating a processing chamber
JP2004089971A (ja) オゾン水の加熱処理方法
TWI279858B (en) Supercritical fluid processing system having a coating on internal members and a method of using
US20060180572A1 (en) Removal of post etch residue for a substrate with open metal surfaces
US7491036B2 (en) Method and system for cooling a pump
US20060102591A1 (en) Method and system for treating a substrate using a supercritical fluid
US20060180174A1 (en) Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
JP5252918B2 (ja) 超臨界流体に化学物質を注入する方法及びシステム
US20060255012A1 (en) Removal of particles from substrate surfaces using supercritical processing
US20060102590A1 (en) Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry
US20040134885A1 (en) Etching and cleaning of semiconductors using supercritical carbon dioxide

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080421

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20080421

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080509

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20080509

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080603

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20080530

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090303

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

RD12 Notification of acceptance of power of sub attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7432

Effective date: 20090224

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090402

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120417

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120417

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120417

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120417

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150417

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees