JP2007537594A - 複数のフィールドプレートを有するワイドバンドギャップトランジスタ - Google Patents
複数のフィールドプレートを有するワイドバンドギャップトランジスタ Download PDFInfo
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/41725—Source or drain electrodes for field effect devices
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Abstract
Description
Claims (33)
- チャネルを有する活性領域と、
前記活性領域と接触して形成されたソース電極およびドレイン電極と、
前記ソース電極とドレイン電極との間に、前記活性領域上に形成されたゲートと、
複数のスペーサ層と、
複数のフィールドプレートと
を備え、前記スペーサ層のうちの第1のスペーサ層は、前記ゲートと前記ドレイン電極およびソース電極との間の前記活性領域の表面の少なくとも一部の上にあり、前記フィールドプレートのうちの第1のフィールドプレートは、前記スペーサ層のうちの前記第1のスペーサ層上にあり、前記スペーサ層とフィールドプレートのうちの残りのスペーサ層とフィールドプレートは、前記スペーサ層のうちの前記第1のスペーサ層と前記フィールドプレートのうちの前記第1のフィールドプレートの上に交互に配置され、前記フィールドプレートのうちの最上部のフィールドプレートは、前記ソース電極に電気的に接続され、前記フィールドプレートのうちの前記最上部のフィールドプレートの下の前記フィールドプレートのそれぞれは、前記ゲートまたはソース電極に電気的に接続されていることを特徴とするトランジスタ。 - 前記第1のフィールドプレート上の前記フィールドプレートのそれぞれは、前記スペーサ層のうちの1つのスペーサ層によって下のフィールドプレートから分離されていることを特徴とする請求項1に記載のトランジスタ。
- 前記フィールドプレートのそれぞれは、少なくとも1つの電気的に接続する導電性経路によって前記ソース電極またはゲートに接続されていることを特徴とする請求項1に記載のトランジスタ。
- 前記フィールドプレートのうちの前記第1のフィールドプレートは、前記ゲートのエッジから前記ドレイン電極に向かって延びる、前記スペーサ層のうちの前記第1のスペーサ層上に延びていることを特徴とする請求項1に記載のトランジスタ。
- 前記フィールドプレートのうちの第2のフィールドプレートは、前記フィールドプレートのうちの前記第1のフィールドプレートのエッジから前記ドレイン電極に向かって前記スペーサ層のうちの第2のスペーサ層上に延びていることを特徴とする請求項4に記載のトランジスタ。
- 前記スペーサ層のうちの前記第1のスペーサ層は、前記ゲートを少なくとも部分的に覆い、前記フィールドプレートのうちの前記第1のフィールドプレートは、前記ゲートと少なくとも部分的にオーバーラップし、前記ゲートのエッジから前記ドレイン電極に向かって前記スペーサ層のうちの前記第1のスペーサ層上で距離Lfだけ延びていることを特徴とする請求項1に記載のトランジスタ。
- 少なくとも1つの導電性経路をさらに備え、前記フィールドプレートのうちの少なくとも1つのフィールドプレートは、前記少なくとも1つの導電性経路によって前記ソース電極に電気的に接続され、前記経路のそれぞれは、前記活性領域の外側を走っていることを特徴とする請求項1に記載のトランジスタ。
- 少なくとも1つの導電性経路をさらに備え、前記スペーサ層のうちの1つのスペーサ層は、前記ゲート、ならびに前記ゲートとソース電極との間の前記活性領域の表面を覆い、前記フィールドプレートのうちの少なくとも1つのフィールドプレートは、前記少なくとも1つの導電性経路によって前記ソース電極に電気的に接続され、前記経路は、前記スペーサ層のうちの前記1つのスペーサ層上を走っていることを特徴とする請求項1に記載のトランジスタ。
- 高電子移動度トランジスタ(HEMT)を備えることを特徴とする請求項1に記載のトランジスタ。
- 電界効果トランジスタを備えることを特徴とする請求項1に記載のトランジスタ。
- 前記ゲートは、ガンマ形状をしていることを特徴とする請求項1に記載のトランジスタ。
- 前記ゲートは、前記活性領域中に少なくとも部分的にリセス化されていることを特徴とする請求項1に記載のトランジスタ。
- 前記フィールドプレートは、前記トランジスタ中のピーク動作電界を低減させることを特徴とする請求項1に記載のトランジスタ。
- ピーク動作電界の前記低減は、前記トランジスタの破壊電圧を増大させることを特徴とする請求項13に記載のトランジスタ。
- ピーク動作電界の前記低減は、前記トランジスタ中のトラッピングを低減させることを特徴とする請求項13に記載のトランジスタ。
- ピーク動作電界の前記低減は、前記トランジスタ中の漏れ電流を低減させることを特徴とする請求項13に記載のトランジスタ。
- 前記スペーサ層は、前記ゲートを完全には覆っておらず、前記第1のフィールドプレートは、前記ゲートと一体化して形成され、前記スペーサ層上で前記ドレイン電極に向かって距離Lfだけ延びていることを特徴とする請求項1に記載のトランジスタ。
- 前記スペーサ層は、誘電体材料を含むことを特徴とする請求項1に記載のトランジスタ。
- 前記スペーサ層のうちの少なくとも1つのスペーサ層は、エピタキシャル材料を含むことを特徴とする請求項1に記載のトランジスタ。
- 前記スペーサ層のうちの前記第1のスペーサ層は、エピタキシャル材料を含むことを特徴とする請求項1に記載のトランジスタ。
- チャネルを有する活性領域と、
前記活性領域と接触したソース電極およびドレイン電極と、
前記ソース電極とドレイン電極との間の、前記活性領域上のゲートと、
前記活性領域上に配置された複数のフィールドプレートと
を備え、フィールドプレートのそれぞれは、前記ゲートのエッジから前記ドレイン電極に向かって延びており、フィールドプレートのそれぞれは、前記活性領域から、また前記フィールドプレートのうちの他のフィールドプレートから分離され、前記フィールドプレートのうちの最上部のフィールドプレートは、前記ソース電極に電気的に接続され、前記フィールドプレートのうちの他のフィールドプレートのそれぞれは、前記ゲートまたは前記ソース電極に電気的に接続されていることを特徴とするトランジスタ。 - 前記活性領域上にやはり配置され、前記フィールドプレートの前記分離を実現する複数のスペーサ層をさらに備えることを特徴とする請求項21に記載のトランジスタ。
- 前記各スペーサ層は、前記フィールドプレートのそれぞれ1つのフィールドプレートと前記フィールドプレートの前記それぞれ1つのフィールドプレートの下の表面との間で挟まれることを特徴とする請求項22に記載のトランジスタ。
- 前記スペーサ層のうちの第1のスペーサ層は、前記フィールドプレートのうちの第1のフィールドプレートと前記活性領域の表面との間にあり、前記スペーサ層のうちの他のスペーサ層は、前記スペーサ層とフィールドプレートのうちの第1のスペーサ層とフィールドプレート上に交互に積み重なっていることを特徴とする請求項22に記載のトランジスタ。
- 前記フィールドプレートのそれぞれは、少なくとも1つの電気的に接続する導電性経路によって前記ソース電極またはゲートに電気的に接続されていることを特徴とする請求項21に記載のトランジスタ。
- 前記スペーサ層のうちの前記第1のスペーサ層は、前記ゲート、ならびに前記ゲートとドレイン電極との間の前記活性領域の表面の少なくとも一部分を少なくとも部分的に覆っており、前記フィールドプレートのうちの前記第1のフィールドプレートは、前記ゲートと少なくとも部分的にオーバーラップしており、前記ゲートのエッジから前記ドレイン電極に向かって前記スペーサ層のうちの前記第1のスペーサ層上で距離Lfだけ延びていることを特徴とする請求項21に記載のトランジスタ。
- 少なくとも1つの導電性経路をさらに備え、前記フィールドプレートのうちの少なくとも1つのフィールドプレートは、前記少なくとも1つの導電性経路によって前記ソース電極に電気的に接続され、前記経路のそれぞれは、前記スペーサ層の外側を走っていることを特徴とする請求項21に記載のトランジスタ。
- 少なくとも1つの導電性経路をさらに備え、前記スペーサ層のうちの1つのスペーサ層は、前記ゲート、ならびに前記ゲートとソース電極との間の前記活性領域の表面を覆っており、前記フィールドプレートのうちの少なくとも1つのフィールドプレートは、前記少なくとも1つの導電性経路によって前記ソース電極に電気的に接続され、前記経路は、前記スペーサ層のうちの前記1つのスペーサ層上を走っていることを特徴とする請求項21に記載のトランジスタ。
- 高電子移動度トランジスタ(HEMT)を備えることを特徴とする請求項21に記載のトランジスタ。
- 電界効果トランジスタを備えることを特徴とする請求項21に記載のトランジスタ。
- 前記ゲートは、ガンマ形状をしていることを特徴とする請求項21に記載のトランジスタ。
- 前記ゲートは、前記活性領域中に少なくとも部分的にリセス化されていることを特徴とする請求項21に記載のトランジスタ。
- 前記フィールドプレートは、前記トランジスタ中のピーク動作電界を低減させることを特徴とする請求項21に記載のトランジスタ。
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Also Published As
Publication number | Publication date |
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EP2538446A2 (en) | 2012-12-26 |
CN1950945B (zh) | 2016-11-16 |
JP5755671B2 (ja) | 2015-07-29 |
WO2005114743A2 (en) | 2005-12-01 |
US20050253168A1 (en) | 2005-11-17 |
JP2013153189A (ja) | 2013-08-08 |
US20090267116A1 (en) | 2009-10-29 |
CA2566361C (en) | 2016-08-23 |
US8664695B2 (en) | 2014-03-04 |
EP2538446A3 (en) | 2014-01-15 |
EP1751804B1 (en) | 2020-11-18 |
US7573078B2 (en) | 2009-08-11 |
KR20070009737A (ko) | 2007-01-18 |
EP1751804A2 (en) | 2007-02-14 |
TW200607092A (en) | 2006-02-16 |
KR101057439B1 (ko) | 2011-08-19 |
WO2005114743A3 (en) | 2006-05-04 |
EP2538446B1 (en) | 2021-06-16 |
CA2566361A1 (en) | 2005-12-01 |
CN1950945A (zh) | 2007-04-18 |
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