CN103779208B - 一种低噪声GaN HEMT器件的制备方法 - Google Patents
一种低噪声GaN HEMT器件的制备方法 Download PDFInfo
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- CN103779208B CN103779208B CN201410001507.9A CN201410001507A CN103779208B CN 103779208 B CN103779208 B CN 103779208B CN 201410001507 A CN201410001507 A CN 201410001507A CN 103779208 B CN103779208 B CN 103779208B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
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- 238000005036 potential barrier Methods 0.000 claims abstract description 22
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- 238000012360 testing method Methods 0.000 claims abstract description 5
- 239000003989 dielectric material Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
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- 229940008309 acetone / ethanol Drugs 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
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- 238000010894 electron beam technology Methods 0.000 claims description 5
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
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- 238000004544 sputter deposition Methods 0.000 claims description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (7)
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CN201410001507.9A CN103779208B (zh) | 2014-01-02 | 2014-01-02 | 一种低噪声GaN HEMT器件的制备方法 |
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CN201410001507.9A CN103779208B (zh) | 2014-01-02 | 2014-01-02 | 一种低噪声GaN HEMT器件的制备方法 |
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CN103779208A CN103779208A (zh) | 2014-05-07 |
CN103779208B true CN103779208B (zh) | 2016-04-06 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157679B (zh) * | 2014-08-27 | 2017-11-14 | 电子科技大学 | 一种氮化镓基增强型异质结场效应晶体管 |
US10205024B2 (en) * | 2016-02-05 | 2019-02-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure having field plate and associated fabricating method |
CN106407629A (zh) * | 2016-11-25 | 2017-02-15 | 成都海威华芯科技有限公司 | 基于蒙特卡洛算法的GaN HEMT噪声模型建立方法 |
WO2018129642A1 (zh) * | 2017-01-10 | 2018-07-19 | 成都海威华芯科技有限公司 | 一种GaN HEMT器件 |
CN107768249A (zh) * | 2017-08-24 | 2018-03-06 | 北京大学深圳研究生院 | 一种高电子迁移率晶体管及其制造方法 |
CN109326522B (zh) * | 2018-11-20 | 2022-09-09 | 中国电子科技集团公司第五十五研究所 | 一种金刚石异质结二极管器件的制备方法 |
CN109638066A (zh) * | 2018-11-28 | 2019-04-16 | 中国科学院半导体研究所 | 含有组分渐变高阻缓冲层的双异质结hemt及其制作方法 |
CN110581170A (zh) * | 2019-08-13 | 2019-12-17 | 中山市华南理工大学现代产业技术研究院 | 具有Г型栅的GaN基MIS-HEMT器件及制备方法 |
CN110911478B (zh) * | 2019-10-22 | 2021-01-05 | 清华大学 | 一种具有亚1nm栅长的二维薄膜场效应晶体管 |
CN110983276A (zh) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | 一种氮化钽薄膜电阻器的制备方法及制备设备 |
CN111933523B (zh) * | 2020-07-08 | 2023-09-08 | 中电科工程建设有限公司 | 一种用于化合物半导体器件的t型栅制作方法 |
CN112380659A (zh) * | 2020-11-11 | 2021-02-19 | 天津大学 | 基于新型电阻模型的GaN HEMT等效电路拓扑结构 |
CN116137286A (zh) * | 2023-04-17 | 2023-05-19 | 江苏能华微电子科技发展有限公司 | 一种增强型GaN HEMT器件及其制备方法 |
CN116544275B (zh) * | 2023-04-18 | 2024-06-11 | 山东大学 | 一种GaN HEMTs及降低器件欧姆接触阻值的方法 |
CN117423694B (zh) * | 2023-12-19 | 2024-02-13 | 扬州扬杰电子科技股份有限公司 | 一种高频通流稳定的GaN HEMT器件及其制备方法 |
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CN1950945A (zh) * | 2004-05-11 | 2007-04-18 | 美商克立股份有限公司 | 具有多个场板的宽能带隙晶体管 |
CN101414624B (zh) * | 2008-12-01 | 2010-06-30 | 西安电子科技大学 | Г栅异质结场效应晶体管及其制作方法 |
CN102646700A (zh) * | 2012-05-07 | 2012-08-22 | 中国电子科技集团公司第五十五研究所 | 复合缓冲层的氮化物高电子迁移率晶体管外延结构 |
CN102916046A (zh) * | 2012-11-02 | 2013-02-06 | 程凯 | 硅衬底上氮化物高压器件及其制造方法 |
CN103117303A (zh) * | 2013-02-07 | 2013-05-22 | 苏州晶湛半导体有限公司 | 一种氮化物功率器件及其制造方法 |
CN103337517A (zh) * | 2013-06-09 | 2013-10-02 | 中国电子科技集团公司第十三研究所 | 基于iii族氮化物材料含多层背势垒的器件结构 |
Family Cites Families (1)
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US20130146943A1 (en) * | 2011-12-12 | 2013-06-13 | John P. EDWARDS | In situ grown gate dielectric and field plate dielectric |
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2014
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Patent Citations (6)
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CN1950945A (zh) * | 2004-05-11 | 2007-04-18 | 美商克立股份有限公司 | 具有多个场板的宽能带隙晶体管 |
CN101414624B (zh) * | 2008-12-01 | 2010-06-30 | 西安电子科技大学 | Г栅异质结场效应晶体管及其制作方法 |
CN102646700A (zh) * | 2012-05-07 | 2012-08-22 | 中国电子科技集团公司第五十五研究所 | 复合缓冲层的氮化物高电子迁移率晶体管外延结构 |
CN102916046A (zh) * | 2012-11-02 | 2013-02-06 | 程凯 | 硅衬底上氮化物高压器件及其制造方法 |
CN103117303A (zh) * | 2013-02-07 | 2013-05-22 | 苏州晶湛半导体有限公司 | 一种氮化物功率器件及其制造方法 |
CN103337517A (zh) * | 2013-06-09 | 2013-10-02 | 中国电子科技集团公司第十三研究所 | 基于iii族氮化物材料含多层背势垒的器件结构 |
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Application publication date: 20140507 Assignee: Nanjing Zhongdian Core Valley High Frequency Device Industry Technology Research Institute Co., Ltd. Assignor: China Electronics Technology Group Corporation No.55 Research Institute Contract record no.: X2020980000164 Denomination of invention: Preparation method of low noise GaN HEMT device Granted publication date: 20160406 License type: Common License Record date: 20200119 |
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