JP2003317971A - 発光装置およびその作製方法 - Google Patents
発光装置およびその作製方法Info
- Publication number
- JP2003317971A JP2003317971A JP2002125970A JP2002125970A JP2003317971A JP 2003317971 A JP2003317971 A JP 2003317971A JP 2002125970 A JP2002125970 A JP 2002125970A JP 2002125970 A JP2002125970 A JP 2002125970A JP 2003317971 A JP2003317971 A JP 2003317971A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light
- emitting device
- light emitting
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 90
- 239000012212 insulator Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000010408 film Substances 0.000 claims description 198
- 238000000034 method Methods 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000003566 sealing material Substances 0.000 claims description 8
- -1 tungsten nitride Chemical class 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000004040 coloring Methods 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 141
- 230000006870 function Effects 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 238000007789 sealing Methods 0.000 description 17
- 239000011159 matrix material Substances 0.000 description 15
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 11
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000000975 dye Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000565 sealant Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 239000011135 tin Substances 0.000 description 7
- 150000005072 1,3,4-oxadiazoles Chemical class 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000002274 desiccant Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910017073 AlLi Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910017911 MgIn Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000012992 electron transfer agent Substances 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910019794 NbN Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical group 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-UHFFFAOYSA-N 4-(dicyanomethylene)-2-methyl-6-(4-(dimethylamino)styryl)-4H-pyran Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- SMFLPHCNEUPBKV-UHFFFAOYSA-N n,n-dimethyl-4-[2-(4h-pyran-2-yl)ethenyl]aniline Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CCC=CO1 SMFLPHCNEUPBKV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000002990 reinforced plastic Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002125970A JP2003317971A (ja) | 2002-04-26 | 2002-04-26 | 発光装置およびその作製方法 |
| US10/422,380 US7402948B2 (en) | 2002-04-26 | 2003-04-24 | Light emitting device |
| US12/157,594 US8044580B2 (en) | 2002-04-26 | 2008-06-11 | Light emitting device and manufacturing method of the same |
| US13/279,478 US8497628B2 (en) | 2002-04-26 | 2011-10-24 | Light emitting device and manufacturing method of the same |
| US13/952,863 US8803418B2 (en) | 2002-04-26 | 2013-07-29 | Light emitting device and manufacturing method of the same |
| US14/456,261 US9412804B2 (en) | 2002-04-26 | 2014-08-11 | Light emitting device and manufacturing method of the same |
| US15/226,251 US9853098B2 (en) | 2002-04-26 | 2016-08-02 | Light emitting device and manufacturing method of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002125970A JP2003317971A (ja) | 2002-04-26 | 2002-04-26 | 発光装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003317971A true JP2003317971A (ja) | 2003-11-07 |
| JP2003317971A5 JP2003317971A5 (enExample) | 2005-09-22 |
Family
ID=29243781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002125970A Withdrawn JP2003317971A (ja) | 2002-04-26 | 2002-04-26 | 発光装置およびその作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (6) | US7402948B2 (enExample) |
| JP (1) | JP2003317971A (enExample) |
Cited By (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005209633A (ja) * | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 表示装置及び表示装置の作製方法 |
| JP2005331665A (ja) * | 2004-05-19 | 2005-12-02 | Seiko Epson Corp | 電気光学装置及びその製造方法、並びに電子機器 |
| JP2006012585A (ja) * | 2004-06-25 | 2006-01-12 | Kyocera Corp | 有機ｅｌ表示パネルとその製法 |
| JP2006049393A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006049394A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006049395A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006049396A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006066379A (ja) * | 2004-07-30 | 2006-03-09 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006066380A (ja) * | 2004-07-30 | 2006-03-09 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006098663A (ja) * | 2004-09-29 | 2006-04-13 | Casio Comput Co Ltd | ディスプレイパネル |
| JP2006114499A (ja) * | 2004-10-11 | 2006-04-27 | Samsung Sdi Co Ltd | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
| JP2006156828A (ja) * | 2004-11-30 | 2006-06-15 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006210845A (ja) * | 2005-01-31 | 2006-08-10 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2007141821A (ja) * | 2005-10-17 | 2007-06-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2007149605A (ja) * | 2005-11-30 | 2007-06-14 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2007273409A (ja) * | 2006-03-31 | 2007-10-18 | Tdk Corp | 画像表示装置及びその製造方法 |
| WO2008047716A1 (fr) * | 2006-10-18 | 2008-04-24 | Toshiba Matsushita Display Technology Co., Ltd. | Dispositif d'affichage |
| US7446338B2 (en) | 2004-09-29 | 2008-11-04 | Casio Computer Co., Ltd. | Display panel |
| US7449833B2 (en) | 2003-11-07 | 2008-11-11 | Seiko Epson Corporation | Light-emitting device having openings in electrode |
| JP2009151955A (ja) * | 2007-12-18 | 2009-07-09 | Sony Corp | 面発光光源およびその製造方法 |
| US7579767B2 (en) | 2004-05-28 | 2009-08-25 | Samsung Mobile Display Co., Ltd. | Organic light emitting device having triple layered pixel electrode |
| JP2009206041A (ja) * | 2008-02-29 | 2009-09-10 | Sony Corp | 有機発光装置およびその製造方法 |
| US7663142B2 (en) | 2002-06-28 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| JP2011134706A (ja) * | 2009-11-24 | 2011-07-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | エレクトロルミネッセンス画面を有する電子表示装置と電子表示装置の製造方法 |
| JP2011171053A (ja) * | 2010-02-17 | 2011-09-01 | Hitachi Displays Ltd | 表示装置 |
| JP2012230928A (ja) * | 2006-06-19 | 2012-11-22 | Sony Corp | 発光表示装置およびその製造方法 |
| JP2013020986A (ja) * | 2005-03-25 | 2013-01-31 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8441185B2 (en) | 2005-10-17 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with improved pixel arrangement |
| KR101296657B1 (ko) * | 2007-09-13 | 2013-08-14 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| KR101308466B1 (ko) | 2007-10-08 | 2013-09-16 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| JP2013186448A (ja) * | 2012-03-12 | 2013-09-19 | Sony Corp | 表示パネル、表示装置および電子機器 |
| KR101319343B1 (ko) | 2007-10-23 | 2013-10-16 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| US8659021B2 (en) | 2010-12-14 | 2014-02-25 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
| US8716758B2 (en) | 2010-10-01 | 2014-05-06 | Samsung Display Co., Ltd. | Thin film transistor and organic light-emitting display |
| JP2014107266A (ja) * | 2012-11-29 | 2014-06-09 | Samsung Display Co Ltd | 有機電界発光装置 |
| KR20140116024A (ko) * | 2013-03-21 | 2014-10-01 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 인캡슐레이션 방법 및 관련 장치 |
| US8927970B2 (en) | 2007-09-13 | 2015-01-06 | Lg Display Co., Ltd. | Organic electroluminescence device and method for manufacturing the same |
| JP2015046239A (ja) * | 2013-08-27 | 2015-03-12 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法、電子機器 |
| WO2024052950A1 (ja) * | 2022-09-05 | 2024-03-14 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
| JP2024526457A (ja) * | 2022-06-16 | 2024-07-19 | 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 | 表示パネル及びその製造方法、表示装置 |
Families Citing this family (128)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| US7786496B2 (en) * | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| JP2003317971A (ja) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| US7164155B2 (en) | 2002-05-15 | 2007-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| JP4216008B2 (ja) | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末 |
| US7109650B2 (en) * | 2002-07-08 | 2006-09-19 | Lg.Philips Lcd Co., Ltd. | Active matrix organic electroluminescent display device and method of fabricating the same |
| WO2004053816A1 (ja) * | 2002-12-10 | 2004-06-24 | Semiconductor Energy Laboratory Co., Ltd. | 発光装置およびその作製方法 |
| JP4373086B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP3915734B2 (ja) * | 2003-05-12 | 2007-05-16 | ソニー株式会社 | 蒸着マスクおよびこれを用いた表示装置の製造方法、ならびに表示装置 |
| KR100527193B1 (ko) * | 2003-06-03 | 2005-11-08 | 삼성에스디아이 주식회사 | 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 |
| JP2005019211A (ja) * | 2003-06-26 | 2005-01-20 | Casio Comput Co Ltd | Ｅｌ表示パネル及びｅｌ表示パネルの製造方法 |
| EP1505666B1 (en) * | 2003-08-05 | 2018-04-04 | LG Display Co., Ltd. | Top-emission active matrix organic electroluminescent display device and method for fabricating the same |
| KR100552972B1 (ko) * | 2003-10-09 | 2006-02-15 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
| KR100611152B1 (ko) * | 2003-11-27 | 2006-08-09 | 삼성에스디아이 주식회사 | 평판표시장치 |
| KR100581901B1 (ko) * | 2004-02-06 | 2006-05-22 | 삼성에스디아이 주식회사 | 액티브 매트릭스형 유기전계발광소자 |
| JP2005317476A (ja) * | 2004-04-30 | 2005-11-10 | Toshiba Matsushita Display Technology Co Ltd | 表示装置 |
| JP4761425B2 (ja) * | 2004-05-12 | 2011-08-31 | 株式会社 日立ディスプレイズ | 表示装置および表示装置の製造方法 |
| KR100635065B1 (ko) * | 2004-05-17 | 2006-10-16 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조방법 |
| JP2006012786A (ja) * | 2004-06-22 | 2006-01-12 | Samsung Sdi Co Ltd | 有機電界発光素子、並びに該製造方法 |
| KR100611652B1 (ko) * | 2004-06-28 | 2006-08-11 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 소자 및 그 제조방법 |
| US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
| KR100607520B1 (ko) * | 2004-11-11 | 2006-08-02 | 엘지전자 주식회사 | 유기 전계발광표시소자 및 그 제조방법 |
| KR100700643B1 (ko) * | 2004-11-29 | 2007-03-27 | 삼성에스디아이 주식회사 | 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법 |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US8026531B2 (en) | 2005-03-22 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2006318910A (ja) * | 2005-05-11 | 2006-11-24 | Lg Electronics Inc | 電界発光素子及びその製造方法、電界発光表示装置及びその製造方法 |
| KR101143006B1 (ko) | 2005-10-28 | 2012-05-08 | 삼성전자주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| US7990047B2 (en) * | 2005-10-28 | 2011-08-02 | Samsung Electronics Co., Ltd. | Organic light emitting diode display and method of manufacturing the same |
| KR101252083B1 (ko) * | 2005-12-22 | 2013-04-12 | 엘지디스플레이 주식회사 | 유기 전계발광 표시장치 및 그 제조방법 |
| JP5117001B2 (ja) * | 2006-07-07 | 2013-01-09 | 株式会社ジャパンディスプレイイースト | 有機ｅｌ表示装置 |
| KR100787461B1 (ko) * | 2006-11-10 | 2007-12-26 | 삼성에스디아이 주식회사 | 다층 구조의 애노드를 채용한 유기 발광 디스플레이 장치 |
| US20080150421A1 (en) * | 2006-12-21 | 2008-06-26 | Canon Kabushiki Kaisha | Organic light-emitting apparatus |
| JP2008234922A (ja) * | 2007-03-19 | 2008-10-02 | Seiko Epson Corp | 有機ｅｌ装置、ラインヘッド、及び電子機器 |
| JP2009026619A (ja) * | 2007-07-20 | 2009-02-05 | Hitachi Displays Ltd | 有機ｅｌ表示装置 |
| KR101432110B1 (ko) * | 2007-09-11 | 2014-08-21 | 삼성디스플레이 주식회사 | 유기 발광 장치 및 그 제조 방법 |
| US20090091254A1 (en) * | 2007-10-08 | 2009-04-09 | Lg.Display Co., Ltd. | Organic electroluminescence device and method for manufacturing the same |
| JP5244378B2 (ja) * | 2007-12-21 | 2013-07-24 | 株式会社日立製作所 | 有機発光表示装置 |
| KR100943948B1 (ko) * | 2008-01-08 | 2010-02-26 | 삼성모바일디스플레이주식회사 | 표시 장치 |
| US8933625B2 (en) | 2008-03-18 | 2015-01-13 | Samsung Display Co., Ltd. | Organic light emitting display apparatus that can function as a mirror |
| KR100937865B1 (ko) | 2008-03-18 | 2010-01-21 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
| JP5291378B2 (ja) * | 2008-05-15 | 2013-09-18 | スタンレー電気株式会社 | フォトカソード装置 |
| KR101415794B1 (ko) * | 2008-06-12 | 2014-07-11 | 삼성디스플레이 주식회사 | 유기전계 발광 표시장치 및 그 제조방법 |
| KR20100001597A (ko) * | 2008-06-27 | 2010-01-06 | 삼성전자주식회사 | 표시 장치와 그 제조 방법 |
| KR20100037876A (ko) * | 2008-10-02 | 2010-04-12 | 삼성전자주식회사 | 유기발광 표시장치 및 이의 제조방법 |
| JP2010093068A (ja) * | 2008-10-08 | 2010-04-22 | Hitachi Displays Ltd | 有機ｅｌ表示装置およびその製造方法 |
| KR100963076B1 (ko) * | 2008-10-29 | 2010-06-14 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
| KR20100048608A (ko) * | 2008-10-31 | 2010-05-11 | 삼성전자주식회사 | 유기발광 표시장치 및 이의 제조 방법 |
| JP4871344B2 (ja) * | 2008-11-25 | 2012-02-08 | 株式会社東芝 | 発光装置及びその製造方法 |
| JP2010157493A (ja) * | 2008-12-02 | 2010-07-15 | Sony Corp | 表示装置およびその製造方法 |
| JP5377985B2 (ja) * | 2009-01-13 | 2013-12-25 | 株式会社東芝 | 半導体発光素子 |
| US20100224878A1 (en) | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5126159B2 (ja) * | 2009-05-07 | 2013-01-23 | 日立電線株式会社 | ネットワーク中継機器及びリングネットワーク |
| KR101097337B1 (ko) * | 2010-03-05 | 2011-12-21 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
| JP5437895B2 (ja) | 2010-04-20 | 2014-03-12 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
| JP2012169189A (ja) * | 2011-02-15 | 2012-09-06 | Koito Mfg Co Ltd | 発光モジュールおよび車両用灯具 |
| KR101890876B1 (ko) * | 2011-03-23 | 2018-08-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치의 제작 방법 |
| JP5796344B2 (ja) * | 2011-05-13 | 2015-10-21 | セイコーエプソン株式会社 | センサー装置 |
| JP2013054863A (ja) * | 2011-09-01 | 2013-03-21 | Sony Corp | 有機ｅｌ表示装置、有機ｅｌ表示装置の製造方法および電子機器 |
| KR101904012B1 (ko) * | 2011-09-30 | 2018-10-04 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
| US10446629B2 (en) | 2011-10-14 | 2019-10-15 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
| WO2013057873A1 (ja) * | 2011-10-18 | 2013-04-25 | 凸版印刷株式会社 | 有機エレクトロルミネセンスディスプレイパネル及びその製造方法 |
| KR20140014682A (ko) * | 2012-07-25 | 2014-02-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조방법 |
| JP6302186B2 (ja) | 2012-08-01 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6204012B2 (ja) | 2012-10-17 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP6076683B2 (ja) | 2012-10-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
| KR20140050994A (ko) * | 2012-10-22 | 2014-04-30 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
| US20140166991A1 (en) * | 2012-12-17 | 2014-06-19 | Dmitri E. Nikonov | Transparent light-emitting display |
| JP6155020B2 (ja) | 2012-12-21 | 2017-06-28 | 株式会社半導体エネルギー研究所 | 発光装置及びその製造方法 |
| JP6216125B2 (ja) | 2013-02-12 | 2017-10-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP6104649B2 (ja) | 2013-03-08 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US9246133B2 (en) | 2013-04-12 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module, light-emitting panel, and light-emitting device |
| KR102039685B1 (ko) * | 2013-04-17 | 2019-11-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR20140143631A (ko) * | 2013-06-07 | 2014-12-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR20150006125A (ko) * | 2013-07-08 | 2015-01-16 | 삼성디스플레이 주식회사 | 유기 발광 표시장치 및 유기 발광 표시장치의 제조 방법 |
| JP6424456B2 (ja) | 2013-07-17 | 2018-11-21 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法、受発光装置、電子機器 |
| CN103715230B (zh) * | 2013-12-31 | 2018-12-07 | 北京维信诺科技有限公司 | 一种透明oled器件及其显示装置 |
| USRE48695E1 (en) | 2013-12-31 | 2021-08-17 | Beijing Visionox Technology Co., Ltd. | Transparent OLED device and display device employing same |
| CN103681775B (zh) * | 2013-12-31 | 2016-06-08 | 京东方科技集团股份有限公司 | Amoled显示装置 |
| KR20150101508A (ko) * | 2014-02-26 | 2015-09-04 | 삼성디스플레이 주식회사 | 유기 발광 표시장치 및 그의 제조방법 |
| TWI790965B (zh) | 2014-05-30 | 2023-01-21 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
| WO2015186741A1 (ja) * | 2014-06-03 | 2015-12-10 | シャープ株式会社 | 有機ｅｌ素子、及び製造方法 |
| US10680017B2 (en) * | 2014-11-07 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device |
| KR102303433B1 (ko) * | 2014-11-24 | 2021-09-17 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그 제조방법 |
| JP6584099B2 (ja) * | 2015-03-10 | 2019-10-02 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
| JP6577224B2 (ja) | 2015-04-23 | 2019-09-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102540372B1 (ko) * | 2015-05-28 | 2023-06-05 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR102555656B1 (ko) * | 2015-05-29 | 2023-07-14 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR102472642B1 (ko) * | 2015-06-16 | 2022-11-30 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
| US10270033B2 (en) | 2015-10-26 | 2019-04-23 | Oti Lumionics Inc. | Method for patterning a coating on a surface and device including a patterned coating |
| US10312310B2 (en) * | 2016-01-19 | 2019-06-04 | Diftek Lasers, Inc. | OLED display and method of fabrication thereof |
| KR102528300B1 (ko) * | 2016-03-10 | 2023-05-04 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| KR102627284B1 (ko) * | 2016-05-12 | 2024-01-22 | 엘지디스플레이 주식회사 | 캐소드 전극과 보조 캐소드 전극의 접속구조 형성 방법과 그를 이용한 유기발광 다이오드 표시장치 |
| KR102491880B1 (ko) | 2016-06-16 | 2023-01-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| US10020351B2 (en) * | 2016-06-24 | 2018-07-10 | Lg Display Co., Ltd. | Electroluminescence display device |
| KR102608419B1 (ko) * | 2016-07-12 | 2023-12-01 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치의 제조방법 |
| WO2018033860A1 (en) | 2016-08-15 | 2018-02-22 | Oti Lumionics Inc. | Light transmissive electrode for light emitting devices |
| KR102553981B1 (ko) * | 2016-08-16 | 2023-07-12 | 삼성디스플레이 주식회사 | 표시 장치용 백플레인 및 이의 제조 방법 |
| CN106299145A (zh) * | 2016-10-17 | 2017-01-04 | 京东方科技集团股份有限公司 | 有机发光二极管器件及其制作方法和显示面板 |
| WO2018100559A1 (en) | 2016-12-02 | 2018-06-07 | Oti Lumionics Inc. | Device including a conductive coating disposed over emissive regions and method therefor |
| KR102781934B1 (ko) | 2016-12-30 | 2025-03-19 | 삼성디스플레이 주식회사 | 도전 패턴 및 이를 구비하는 표시 장치 |
| JP2020518107A (ja) | 2017-04-26 | 2020-06-18 | オーティーアイ ルミオニクス インコーポレーテッドＯｔｉ Ｌｕｍｉｏｎｉｃｓ Ｉｎｃ． | 表面上のコーティングをパターン化する方法およびパターン化されたコーティングを含むデバイス |
| KR102685809B1 (ko) | 2017-05-17 | 2024-07-18 | 오티아이 루미오닉스 인크. | 패턴화 코팅 위에 전도성 코팅을 선택적으로 증착시키는 방법 및 전도성 코팅을 포함하는 디바이스 |
| CN107316949B (zh) | 2017-07-11 | 2020-07-31 | 京东方科技集团股份有限公司 | 显示面板及其制造方法、显示装置 |
| KR102451538B1 (ko) * | 2017-12-05 | 2022-10-07 | 삼성디스플레이 주식회사 | 표시 패널 및 그 제조 방법 |
| US11751415B2 (en) | 2018-02-02 | 2023-09-05 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
| KR102560100B1 (ko) * | 2018-03-08 | 2023-07-26 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| KR20250150689A (ko) | 2018-05-07 | 2025-10-20 | 오티아이 루미오닉스 인크. | 보조 전극을 제공하는 방법 및 보조 전극을 포함하는 장치 |
| CN109148727B (zh) | 2018-08-31 | 2021-01-29 | 京东方科技集团股份有限公司 | Oled显示基板及制备方法、显示装置 |
| KR102733293B1 (ko) * | 2018-10-08 | 2024-11-25 | 엘지디스플레이 주식회사 | 표시장치 |
| CN112889162A (zh) | 2018-11-23 | 2021-06-01 | Oti照明公司 | 包括光透射区域的光电装置 |
| WO2020178804A1 (en) | 2019-03-07 | 2020-09-10 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
| KR20250110358A (ko) | 2019-04-18 | 2025-07-18 | 오티아이 루미오닉스 인크. | 핵 생성 억제 코팅 형성용 물질 및 이를 포함하는 디바이스 |
| US12069938B2 (en) | 2019-05-08 | 2024-08-20 | Oti Lumionics Inc. | Materials for forming a nucleation-inhibiting coating and devices incorporating same |
| CN110323356B (zh) * | 2019-05-08 | 2021-11-02 | 京东方科技集团股份有限公司 | Oled显示基板及制造方法、显示装置 |
| KR20240134240A (ko) | 2019-06-26 | 2024-09-06 | 오티아이 루미오닉스 인크. | 광 회절 특성을 갖는 광 투과 영역을 포함하는 광전자 디바이스 |
| US11832473B2 (en) | 2019-06-26 | 2023-11-28 | Oti Lumionics Inc. | Optoelectronic device including light transmissive regions, with light diffraction characteristics |
| US12302691B2 (en) | 2019-08-09 | 2025-05-13 | Oti Lumionics Inc. | Opto-electronic device including an auxiliary electrode and a partition |
| US11444139B2 (en) | 2019-08-28 | 2022-09-13 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel providing planarization layer on pixel defining layer around light emitting functional layer, display device, and manufacturing method of the display panel |
| CN110600513B (zh) * | 2019-08-28 | 2021-01-15 | 武汉华星光电半导体显示技术有限公司 | 显示面板、显示装置及显示面板的制作方法 |
| CN110828694A (zh) * | 2019-10-31 | 2020-02-21 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及触控显示装置 |
| US11737298B2 (en) | 2019-12-24 | 2023-08-22 | Oti Lumionics Inc. | Light emitting device including capping layers on respective emissive regions |
| CN111244326A (zh) * | 2020-01-22 | 2020-06-05 | 合肥鑫晟光电科技有限公司 | Oled显示基板及其制作方法、显示装置 |
| CN111403452A (zh) * | 2020-03-26 | 2020-07-10 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板、显示模组及电子装置 |
| US11296163B2 (en) * | 2020-05-27 | 2022-04-05 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED display panel and OLED display device |
| CN111864106B (zh) * | 2020-07-10 | 2021-06-22 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板、显示面板的制作方法及显示装置 |
| CA3240373A1 (en) | 2020-12-07 | 2022-06-16 | Michael HELANDER | Patterning a conductive deposited layer using a nucleation inhibiting coating and an underlying metallic coating |
| CN113327971B (zh) | 2021-06-30 | 2022-10-04 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999039393A1 (en) * | 1998-02-02 | 1999-08-05 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
| JP2000021566A (ja) * | 1998-06-30 | 2000-01-21 | Nippon Seiki Co Ltd | エレクトロルミネセンス |
| JP2001043980A (ja) * | 1999-07-29 | 2001-02-16 | Sony Corp | 有機エレクトロルミネッセンス素子及び表示装置 |
| JP2001076868A (ja) * | 1999-06-28 | 2001-03-23 | Semiconductor Energy Lab Co Ltd | Ｅｌ表示装置及び電子装置 |
| JP2001230086A (ja) * | 2000-02-16 | 2001-08-24 | Idemitsu Kosan Co Ltd | アクティブ駆動型有機ｅｌ発光装置およびその製造方法 |
| WO2001063975A1 (en) * | 2000-02-25 | 2001-08-30 | Seiko Epson Corporation | Organic el device and method of manufacture thereof |
| JP2001351787A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | 有機ｌｅｄ素子とその製造方法および有機ｌｅｄディスプレイ |
| JP2002093586A (ja) * | 2000-09-19 | 2002-03-29 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
Family Cites Families (133)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4411735A (en) | 1982-05-06 | 1983-10-25 | National Semiconductor Corporation | Polymeric insulation layer etching process and composition |
| US5063327A (en) | 1988-07-06 | 1991-11-05 | Coloray Display Corporation | Field emission cathode based flat panel display having polyimide spacers |
| CA1302547C (en) | 1988-12-02 | 1992-06-02 | Jerzy A. Dobrowolski | Optical interference electroluminescent device having low reflectance |
| US5047687A (en) * | 1990-07-26 | 1991-09-10 | Eastman Kodak Company | Organic electroluminescent device with stabilized cathode |
| US5232549A (en) | 1992-04-14 | 1993-08-03 | Micron Technology, Inc. | Spacers for field emission display fabricated via self-aligned high energy ablation |
| JP3587537B2 (ja) | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO1996008122A1 (fr) | 1994-09-08 | 1996-03-14 | Idemitsu Kosan Co., Ltd. | Procede d'enrobage d'un element electroluminescent organique et d'un autre element electroluminescent organique |
| US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
| DE69535970D1 (de) | 1994-12-14 | 2009-08-06 | Eastman Kodak Co | Elektrolumineszente Vorrichtung mit einer organischen elektrolumineszenten Schicht |
| JP3401356B2 (ja) | 1995-02-21 | 2003-04-28 | パイオニア株式会社 | 有機エレクトロルミネッセンスディスプレイパネルとその製造方法 |
| US5640067A (en) | 1995-03-24 | 1997-06-17 | Tdk Corporation | Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
| US5786664A (en) * | 1995-03-27 | 1998-07-28 | Youmin Liu | Double-sided electroluminescent device |
| JP2824411B2 (ja) | 1995-08-25 | 1998-11-11 | 株式会社豊田中央研究所 | 有機薄膜発光素子 |
| US6037712A (en) | 1996-06-10 | 2000-03-14 | Tdk Corporation | Organic electroluminescence display device and producing method thereof |
| JP3392672B2 (ja) | 1996-11-29 | 2003-03-31 | 三洋電機株式会社 | 表示装置 |
| US6091195A (en) | 1997-02-03 | 2000-07-18 | The Trustees Of Princeton University | Displays having mesa pixel configuration |
| KR100226548B1 (ko) | 1996-12-24 | 1999-10-15 | 김영환 | 웨이퍼 습식 처리 장치 |
| US5882982A (en) | 1997-01-16 | 1999-03-16 | Vlsi Technology, Inc. | Trench isolation method |
| US6462722B1 (en) | 1997-02-17 | 2002-10-08 | Seiko Epson Corporation | Current-driven light-emitting display apparatus and method of producing the same |
| TW578130B (en) | 1997-02-17 | 2004-03-01 | Seiko Epson Corp | Display unit |
| TW477907B (en) | 1997-03-07 | 2002-03-01 | Toshiba Corp | Array substrate, liquid crystal display device and their manufacturing method |
| JPH10289784A (ja) | 1997-04-14 | 1998-10-27 | Mitsubishi Chem Corp | 有機電界発光素子 |
| JP3541625B2 (ja) | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
| JP3520396B2 (ja) | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | アクティブマトリクス基板と表示装置 |
| JPH1131590A (ja) * | 1997-07-09 | 1999-02-02 | Tdk Corp | 有機ｅｌ素子 |
| US6753584B1 (en) | 1997-08-21 | 2004-06-22 | Micron Technology, Inc. | Antireflective coating layer |
| FR2767939B1 (fr) | 1997-09-04 | 2001-11-02 | Bull Sa | Procede d'allocation de memoire dans un systeme de traitement de l'information multiprocesseur |
| JPH1197182A (ja) | 1997-09-24 | 1999-04-09 | Pioneer Electron Corp | 発光ディスプレイパネル |
| US6403289B1 (en) | 1997-10-31 | 2002-06-11 | Nippon Zeon Co., Ltd. | Developer for photosensitive polyimide resin composition |
| US6396208B1 (en) | 1998-01-27 | 2002-05-28 | Nec Corporation | Organic electroluminescent device and its manufacturing process |
| US6501217B2 (en) | 1998-02-02 | 2002-12-31 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
| GB9803764D0 (en) | 1998-02-23 | 1998-04-15 | Cambridge Display Tech Ltd | Display devices |
| DE69939514D1 (de) | 1998-03-17 | 2008-10-23 | Seiko Epson Corp | Verfahren zur herstellung einer strukturierten dünnschichtvorrichtung |
| KR100582328B1 (ko) | 1998-04-09 | 2006-05-23 | 이데미쓰 고산 가부시키가이샤 | 유기 전자 발광 소자 |
| JPH11307264A (ja) | 1998-04-17 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 有機電界発光素子 |
| WO1999059379A2 (en) | 1998-05-14 | 1999-11-18 | Fed Corporation | An organic light emitting diode device for use with opaque substrates |
| JP3951445B2 (ja) | 1998-05-15 | 2007-08-01 | セイコーエプソン株式会社 | 有機ｅｌ素子、表示装置、光学装置、有機ｅｌ素子の製造方法、表示装置の製造方法、および光学装置の製造方法 |
| JPH11339970A (ja) | 1998-05-26 | 1999-12-10 | Tdk Corp | 有機ｅｌ表示装置 |
| CN1271892C (zh) | 1998-06-30 | 2006-08-23 | 日本精机株式会社 | 电致发光元件 |
| US6114158A (en) * | 1998-07-17 | 2000-09-05 | University Of Georgia Research Foundation, Inc. | Orpinomyces cellulase celf protein and coding sequences |
| JP2000077181A (ja) | 1998-09-01 | 2000-03-14 | Denso Corp | Ｅｌ素子 |
| JP2000091083A (ja) | 1998-09-09 | 2000-03-31 | Sony Corp | 有機ｅｌディスプレイ |
| EP1029336A1 (en) | 1998-09-11 | 2000-08-23 | Fed Corporation | Top emitting oled with refractory metal compounds as bottom cathode |
| US6351010B1 (en) * | 1998-09-22 | 2002-02-26 | Sony Corporation | Electrooptical device, substrate for driving electrooptical device and methods for making the same |
| GB9821311D0 (en) | 1998-10-02 | 1998-11-25 | Koninkl Philips Electronics Nv | Reflective liquid crystal display device |
| JP2000164716A (ja) | 1998-11-26 | 2000-06-16 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2000193994A (ja) | 1998-12-25 | 2000-07-14 | Victor Co Of Japan Ltd | 反射型液晶表示装置 |
| US6306559B1 (en) | 1999-01-26 | 2001-10-23 | Mitsubishi Chemical Corporation | Organic electroluminescent device comprising a patterned photosensitive composition and a method for producing same |
| JP3125777B2 (ja) | 1999-01-28 | 2001-01-22 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子及びパネル |
| JP2000269473A (ja) | 1999-03-17 | 2000-09-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6475836B1 (en) | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6512504B1 (en) * | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
| JP2001043981A (ja) | 1999-05-24 | 2001-02-16 | Toray Ind Inc | 表示装置およびその製造方法 |
| JP2001052870A (ja) | 1999-06-03 | 2001-02-23 | Tdk Corp | 有機ｅｌ素子 |
| US8853696B1 (en) * | 1999-06-04 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and electronic device |
| TWI232595B (en) | 1999-06-04 | 2005-05-11 | Semiconductor Energy Lab | Electroluminescence display device and electronic device |
| JP4627822B2 (ja) | 1999-06-23 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US6720572B1 (en) | 1999-06-25 | 2004-04-13 | The Penn State Research Foundation | Organic light emitters with improved carrier injection |
| TW515109B (en) | 1999-06-28 | 2002-12-21 | Semiconductor Energy Lab | EL display device and electronic device |
| US6411019B1 (en) | 1999-07-27 | 2002-06-25 | Luxell Technologies Inc. | Organic electroluminescent device |
| JP4472073B2 (ja) | 1999-09-03 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| TW522453B (en) | 1999-09-17 | 2003-03-01 | Semiconductor Energy Lab | Display device |
| US6641933B1 (en) | 1999-09-24 | 2003-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting EL display device |
| TW468283B (en) | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
| US6384427B1 (en) | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| JP2001148291A (ja) | 1999-11-19 | 2001-05-29 | Sony Corp | 表示装置及びその製造方法 |
| JP2001154001A (ja) | 1999-11-30 | 2001-06-08 | Fuji Photo Optical Co Ltd | 導電性反射防止膜 |
| TWI252592B (en) | 2000-01-17 | 2006-04-01 | Semiconductor Energy Lab | EL display device |
| US6639265B2 (en) | 2000-01-26 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| TW495812B (en) | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, method of forming a thin film, and self-light-emitting device |
| US6881501B2 (en) | 2000-03-13 | 2005-04-19 | Seiko Epson Corporation | Organic electro-luminescence element and the manufacturing method thereof |
| US6853130B2 (en) | 2000-03-21 | 2005-02-08 | Seiko Epson Corporation | Organic electroluminescent device and manufacturing method therefor |
| JP4810739B2 (ja) | 2000-03-21 | 2011-11-09 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
| US7301276B2 (en) * | 2000-03-27 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method of manufacturing the same |
| TW484238B (en) | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
| JP4004709B2 (ja) | 2000-03-30 | 2007-11-07 | パイオニア株式会社 | 有機エレクトロルミネッセンス表示パネル及びその製造方法 |
| US6515310B2 (en) | 2000-05-06 | 2003-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electric apparatus |
| US6608449B2 (en) * | 2000-05-08 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent apparatus and method of manufacturing the same |
| US6692845B2 (en) | 2000-05-12 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| KR100623989B1 (ko) | 2000-05-23 | 2006-09-13 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 수리 방법 |
| JP2001332741A (ja) | 2000-05-25 | 2001-11-30 | Sony Corp | 薄膜トランジスタの製造方法 |
| JP4581187B2 (ja) | 2000-06-13 | 2010-11-17 | ソニー株式会社 | 表示装置の製造方法 |
| JP2002008566A (ja) | 2000-06-19 | 2002-01-11 | Asahi Glass Co Ltd | 光吸収性反射防止ガラス基体とその製造方法 |
| US6528824B2 (en) | 2000-06-29 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2002015860A (ja) | 2000-06-30 | 2002-01-18 | Sony Corp | 有機エレクトロルミネッセンス素子 |
| JP4626018B2 (ja) | 2000-06-30 | 2011-02-02 | ソニー株式会社 | 有機エレクトロルミネッセンス表示装置 |
| US6690034B2 (en) | 2000-07-31 | 2004-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US6956324B2 (en) | 2000-08-04 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| US6605826B2 (en) | 2000-08-18 | 2003-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
| JP4423767B2 (ja) | 2000-08-22 | 2010-03-03 | ソニー株式会社 | 有機電界発光素子及びその製造方法 |
| US6261913B1 (en) | 2000-08-23 | 2001-07-17 | Micron Technology, Inc. | Method for using thin spacers and oxidation in gate oxides |
| JP2002071902A (ja) | 2000-08-25 | 2002-03-12 | Asahi Glass Co Ltd | 光吸収性反射防止体 |
| JP2002076352A (ja) * | 2000-08-31 | 2002-03-15 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2002083691A (ja) | 2000-09-06 | 2002-03-22 | Sharp Corp | アクティブマトリックス駆動型有機ｌｅｄ表示装置及びその製造方法 |
| JP2002082627A (ja) * | 2000-09-07 | 2002-03-22 | Sony Corp | 表示装置 |
| US6739931B2 (en) * | 2000-09-18 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
| TWI286349B (en) | 2000-10-02 | 2007-09-01 | Ibm | Electrode, fabricating method thereof, and organic electroluminescent device |
| JP2002131506A (ja) | 2000-10-20 | 2002-05-09 | Sony Corp | 反射防止体及び陰極線管 |
| JP3695308B2 (ja) | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機ｅｌ表示装置及びその製造方法 |
| JP3943900B2 (ja) | 2000-11-09 | 2007-07-11 | 株式会社東芝 | 自己発光型表示装置 |
| TW535137B (en) | 2000-11-09 | 2003-06-01 | Toshiba Corp | Self-illuminating display device |
| JP4954366B2 (ja) | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2002198182A (ja) | 2000-12-25 | 2002-07-12 | Sony Corp | 有機ｅｌ素子 |
| TW545080B (en) | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP4798322B2 (ja) | 2001-01-26 | 2011-10-19 | ソニー株式会社 | 表示装置及び表示装置の製造方法 |
| US6717181B2 (en) | 2001-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device having thin film transistor |
| JP3608613B2 (ja) | 2001-03-28 | 2005-01-12 | 株式会社日立製作所 | 表示装置 |
| US6900470B2 (en) * | 2001-04-20 | 2005-05-31 | Kabushiki Kaisha Toshiba | Display device and method of manufacturing the same |
| JP4801278B2 (ja) | 2001-04-23 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP2002352963A (ja) | 2001-05-23 | 2002-12-06 | Sony Corp | 表示装置 |
| JP2003017272A (ja) | 2001-07-03 | 2003-01-17 | Sony Corp | 表示装置および表示装置の製造方法 |
| JP2003017273A (ja) | 2001-07-05 | 2003-01-17 | Sony Corp | 表示装置および表示装置の製造方法 |
| JP4024526B2 (ja) | 2001-08-29 | 2007-12-19 | 富士フイルム株式会社 | 縮合八環芳香族化合物並びにそれを用いた有機ｅｌ素子及び有機ｅｌディスプレイ |
| SG111968A1 (en) | 2001-09-28 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| JP2003139932A (ja) | 2001-10-31 | 2003-05-14 | Seiko Epson Corp | カラーフィルタ基板、カラーフィルタ基板の製造方法、電気光学装置、電気光学装置の製造方法、及び、電子機器 |
| US6822264B2 (en) | 2001-11-16 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US6597111B2 (en) | 2001-11-27 | 2003-07-22 | Universal Display Corporation | Protected organic optoelectronic devices |
| JP4101511B2 (ja) | 2001-12-27 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| US7098069B2 (en) | 2002-01-24 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
| KR100581850B1 (ko) | 2002-02-27 | 2006-05-22 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치와 그 제조 방법 |
| EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
| JP2003303684A (ja) | 2002-04-09 | 2003-10-24 | Canon Inc | 有機発光素子アレイおよび有機発光素子アレイパッケージ |
| KR100563675B1 (ko) | 2002-04-09 | 2006-03-28 | 캐논 가부시끼가이샤 | 유기 발광소자 및 유기 발광소자 패키지 |
| US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| US7786496B2 (en) | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| JP2003317971A (ja) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| TWI263339B (en) | 2002-05-15 | 2006-10-01 | Semiconductor Energy Lab | Light emitting device and method for manufacturing the same |
| US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| KR100477746B1 (ko) | 2002-06-22 | 2005-03-18 | 삼성에스디아이 주식회사 | 다층 구조의 애노드를 채용한 유기 전계 발광 소자 |
| JP4216008B2 (ja) | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末 |
| JP4373086B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US9312392B2 (en) * | 2013-05-16 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2002
- 2002-04-26 JP JP2002125970A patent/JP2003317971A/ja not_active Withdrawn
-
2003
- 2003-04-24 US US10/422,380 patent/US7402948B2/en not_active Expired - Fee Related
-
2008
- 2008-06-11 US US12/157,594 patent/US8044580B2/en not_active Expired - Fee Related
-
2011
- 2011-10-24 US US13/279,478 patent/US8497628B2/en not_active Expired - Fee Related
-
2013
- 2013-07-29 US US13/952,863 patent/US8803418B2/en not_active Expired - Fee Related
-
2014
- 2014-08-11 US US14/456,261 patent/US9412804B2/en not_active Expired - Fee Related
-
2016
- 2016-08-02 US US15/226,251 patent/US9853098B2/en not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999039393A1 (en) * | 1998-02-02 | 1999-08-05 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
| JP2000021566A (ja) * | 1998-06-30 | 2000-01-21 | Nippon Seiki Co Ltd | エレクトロルミネセンス |
| JP2001076868A (ja) * | 1999-06-28 | 2001-03-23 | Semiconductor Energy Lab Co Ltd | Ｅｌ表示装置及び電子装置 |
| JP2001043980A (ja) * | 1999-07-29 | 2001-02-16 | Sony Corp | 有機エレクトロルミネッセンス素子及び表示装置 |
| JP2001230086A (ja) * | 2000-02-16 | 2001-08-24 | Idemitsu Kosan Co Ltd | アクティブ駆動型有機ｅｌ発光装置およびその製造方法 |
| WO2001063975A1 (en) * | 2000-02-25 | 2001-08-30 | Seiko Epson Corporation | Organic el device and method of manufacture thereof |
| JP2001351787A (ja) * | 2000-06-07 | 2001-12-21 | Sharp Corp | 有機ｌｅｄ素子とその製造方法および有機ｌｅｄディスプレイ |
| JP2002093586A (ja) * | 2000-09-19 | 2002-03-29 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
Cited By (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7663142B2 (en) | 2002-06-28 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| US7868543B2 (en) | 2003-11-07 | 2011-01-11 | Seiko Epson Corporation | Light-emitting device having openings in electrode |
| US7449833B2 (en) | 2003-11-07 | 2008-11-11 | Seiko Epson Corporation | Light-emitting device having openings in electrode |
| JP2005209633A (ja) * | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 表示装置及び表示装置の作製方法 |
| JP2005331665A (ja) * | 2004-05-19 | 2005-12-02 | Seiko Epson Corp | 電気光学装置及びその製造方法、並びに電子機器 |
| US8183063B2 (en) | 2004-05-28 | 2012-05-22 | Samsung Mobile Display Co., Ltd. | Organic light emitting device and method of fabricating the same |
| US7579767B2 (en) | 2004-05-28 | 2009-08-25 | Samsung Mobile Display Co., Ltd. | Organic light emitting device having triple layered pixel electrode |
| JP2006012585A (ja) * | 2004-06-25 | 2006-01-12 | Kyocera Corp | 有機ｅｌ表示パネルとその製法 |
| JP2006066380A (ja) * | 2004-07-30 | 2006-03-09 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006049396A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006049393A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006049394A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006066379A (ja) * | 2004-07-30 | 2006-03-09 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006049395A (ja) * | 2004-07-30 | 2006-02-16 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006098663A (ja) * | 2004-09-29 | 2006-04-13 | Casio Comput Co Ltd | ディスプレイパネル |
| US7446338B2 (en) | 2004-09-29 | 2008-11-04 | Casio Computer Co., Ltd. | Display panel |
| US7498733B2 (en) | 2004-09-29 | 2009-03-03 | Casio Computer Co., Ltd. | Display panel |
| JP2006114499A (ja) * | 2004-10-11 | 2006-04-27 | Samsung Sdi Co Ltd | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
| US7915821B2 (en) | 2004-10-11 | 2011-03-29 | Samsung Mobile Display Co., Ltd. | OLED comprising an organic insulating layer with grooves and an inorganic layer filling the grooves |
| JP2006156828A (ja) * | 2004-11-30 | 2006-06-15 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2006210845A (ja) * | 2005-01-31 | 2006-08-10 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2015057792A (ja) * | 2005-03-25 | 2015-03-26 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2013020986A (ja) * | 2005-03-25 | 2013-01-31 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US9246056B2 (en) | 2005-03-25 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US11171315B2 (en) | 2005-10-17 | 2021-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a structure which prevents a defect due to precision and bending and manufacturing method thereof |
| US11770965B2 (en) | 2005-10-17 | 2023-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US12127466B2 (en) | 2005-10-17 | 2024-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10199612B2 (en) | 2005-10-17 | 2019-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having reduced upper surface shape of a partition in order to improve definition and manufacturing method thereof |
| US9893325B2 (en) | 2005-10-17 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a structure that prevents defects due to precision, bending and the like of a mask without increasing manufacturing steps |
| JP2007141821A (ja) * | 2005-10-17 | 2007-06-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US9536932B2 (en) | 2005-10-17 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a semiconductor lighting emitting device that prevents defect of the mask without increasing steps |
| US8441185B2 (en) | 2005-10-17 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with improved pixel arrangement |
| US9224792B2 (en) | 2005-10-17 | 2015-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2007149605A (ja) * | 2005-11-30 | 2007-06-14 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| JP2007273409A (ja) * | 2006-03-31 | 2007-10-18 | Tdk Corp | 画像表示装置及びその製造方法 |
| JP2012230928A (ja) * | 2006-06-19 | 2012-11-22 | Sony Corp | 発光表示装置およびその製造方法 |
| WO2008047716A1 (fr) * | 2006-10-18 | 2008-04-24 | Toshiba Matsushita Display Technology Co., Ltd. | Dispositif d'affichage |
| US8927970B2 (en) | 2007-09-13 | 2015-01-06 | Lg Display Co., Ltd. | Organic electroluminescence device and method for manufacturing the same |
| KR101296657B1 (ko) * | 2007-09-13 | 2013-08-14 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| KR101308466B1 (ko) | 2007-10-08 | 2013-09-16 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| KR101319343B1 (ko) | 2007-10-23 | 2013-10-16 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| JP2009151955A (ja) * | 2007-12-18 | 2009-07-09 | Sony Corp | 面発光光源およびその製造方法 |
| JP2009206041A (ja) * | 2008-02-29 | 2009-09-10 | Sony Corp | 有機発光装置およびその製造方法 |
| JP2011134706A (ja) * | 2009-11-24 | 2011-07-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | エレクトロルミネッセンス画面を有する電子表示装置と電子表示装置の製造方法 |
| JP2011171053A (ja) * | 2010-02-17 | 2011-09-01 | Hitachi Displays Ltd | 表示装置 |
| US8817200B2 (en) | 2010-02-17 | 2014-08-26 | Japan Display Inc. | Liquid crystal display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein the first layer is denser than the second layer |
| US8947610B2 (en) | 2010-02-17 | 2015-02-03 | Japan Display Inc. | Display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein an amount of oxygen in the first layer is larger than in the second layer |
| US9281319B2 (en) | 2010-10-01 | 2016-03-08 | Samsung Display Co., Ltd. | Thin film transistor and organic light-emitting display |
| US8716758B2 (en) | 2010-10-01 | 2014-05-06 | Samsung Display Co., Ltd. | Thin film transistor and organic light-emitting display |
| US8659021B2 (en) | 2010-12-14 | 2014-02-25 | Samsung Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
| JP2013186448A (ja) * | 2012-03-12 | 2013-09-19 | Sony Corp | 表示パネル、表示装置および電子機器 |
| JP2014107266A (ja) * | 2012-11-29 | 2014-06-09 | Samsung Display Co Ltd | 有機電界発光装置 |
| KR20140116024A (ko) * | 2013-03-21 | 2014-10-01 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 인캡슐레이션 방법 및 관련 장치 |
| JP2014197677A (ja) * | 2013-03-21 | 2014-10-16 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 封止方法及びそれに関連するデバイス |
| KR102164586B1 (ko) | 2013-03-21 | 2020-10-12 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 인캡슐레이션 방법 및 관련 장치 |
| US11374077B2 (en) | 2013-08-27 | 2022-06-28 | Seiko Epson Corporation | Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes |
| US10074708B2 (en) | 2013-08-27 | 2018-09-11 | Seiko Epson Corporation | Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes |
| US11557637B2 (en) | 2013-08-27 | 2023-01-17 | Seiko Epson Corporation | Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes |
| US10714555B2 (en) | 2013-08-27 | 2020-07-14 | Seiko Epson Corporation | Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes |
| US11895871B2 (en) | 2013-08-27 | 2024-02-06 | Seiko Epson Corporation | Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes |
| JP2015046239A (ja) * | 2013-08-27 | 2015-03-12 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法、電子機器 |
| US12178080B2 (en) | 2013-08-27 | 2024-12-24 | Seiko Epson Corporation | Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes |
| JP2024526457A (ja) * | 2022-06-16 | 2024-07-19 | 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 | 表示パネル及びその製造方法、表示装置 |
| JP7672416B2 (ja) | 2022-06-16 | 2025-05-07 | 深▲セン▼市▲華▼星光▲電▼半▲導▼体▲顕▼示技▲術▼有限公司 | 表示パネル及びその製造方法、表示装置 |
| US12364143B2 (en) | 2022-06-16 | 2025-07-15 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel, manufacturing method thereof, and display device |
| WO2024052950A1 (ja) * | 2022-09-05 | 2024-03-14 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140027803A1 (en) | 2014-01-30 |
| US9853098B2 (en) | 2017-12-26 |
| US9412804B2 (en) | 2016-08-09 |
| US20120098013A1 (en) | 2012-04-26 |
| US8803418B2 (en) | 2014-08-12 |
| US7402948B2 (en) | 2008-07-22 |
| US20080252207A1 (en) | 2008-10-16 |
| US8497628B2 (en) | 2013-07-30 |
| US8044580B2 (en) | 2011-10-25 |
| US20160343793A1 (en) | 2016-11-24 |
| US20030201716A1 (en) | 2003-10-30 |
| US20140346492A1 (en) | 2014-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9853098B2 (en) | Light emitting device and manufacturing method of the same | |
| US8309976B2 (en) | Light emitting device and manufacturing method thereof | |
| US9978811B2 (en) | Light emitting device and method of manufacturing the same | |
| JP4401688B2 (ja) | 発光装置およびその作製方法、並びに電子機器 | |
| JP4373086B2 (ja) | 発光装置 | |
| US7663305B2 (en) | Light emitting device and method of manufacturing the same | |
| KR100968512B1 (ko) | 발광장치 및 그의 제조방법 | |
| JP4156431B2 (ja) | 発光装置およびその作製方法 | |
| JP4683825B2 (ja) | 半導体装置およびその作製方法 | |
| JP4339000B2 (ja) | 半導体装置およびその作製方法 | |
| JP2004220870A (ja) | 発光装置の製造方法 | |
| JP2003297574A (ja) | 発光装置 | |
| JP2004047446A (ja) | 発光装置およびその作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050411 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050411 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070605 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070703 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070829 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071113 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20071203 |