JP2001324725A - 液晶表示装置およびその製造方法 - Google Patents

液晶表示装置およびその製造方法

Info

Publication number
JP2001324725A
JP2001324725A JP2000144586A JP2000144586A JP2001324725A JP 2001324725 A JP2001324725 A JP 2001324725A JP 2000144586 A JP2000144586 A JP 2000144586A JP 2000144586 A JP2000144586 A JP 2000144586A JP 2001324725 A JP2001324725 A JP 2001324725A
Authority
JP
Japan
Prior art keywords
film
wiring
electrode
liquid crystal
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2000144586A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001324725A5 (enExample
Inventor
Kikuo Ono
記久雄 小野
Yoshiaki Nakayoshi
良彰 仲吉
Ryutaro Oke
隆太郎 桶
Toshiteru Kaneko
寿輝 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000144586A priority Critical patent/JP2001324725A/ja
Priority to TW090110435A priority patent/TWI286257B/zh
Priority to US09/851,942 priority patent/US6762802B2/en
Priority to KR10-2001-0025886A priority patent/KR100467993B1/ko
Priority to CNB011231068A priority patent/CN1268968C/zh
Priority to CNB2006100025019A priority patent/CN100435012C/zh
Priority to CNA2006101011916A priority patent/CN1920630A/zh
Publication of JP2001324725A publication Critical patent/JP2001324725A/ja
Priority to US10/879,587 priority patent/US20040232421A1/en
Priority to US10/879,635 priority patent/US20050007507A1/en
Priority to US11/522,466 priority patent/US20070159568A1/en
Publication of JP2001324725A5 publication Critical patent/JP2001324725A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000144586A 2000-05-12 2000-05-12 液晶表示装置およびその製造方法 Abandoned JP2001324725A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2000144586A JP2001324725A (ja) 2000-05-12 2000-05-12 液晶表示装置およびその製造方法
TW090110435A TWI286257B (en) 2000-05-12 2001-05-01 Liquid crystal display device
US09/851,942 US6762802B2 (en) 2000-05-12 2001-05-10 Liquid crystal display device and fabrication method thereof
KR10-2001-0025886A KR100467993B1 (ko) 2000-05-12 2001-05-11 액정 표시 장치
CNB2006100025019A CN100435012C (zh) 2000-05-12 2001-05-12 液晶显示装置及其制造方法
CNB011231068A CN1268968C (zh) 2000-05-12 2001-05-12 液晶显示装置及其制造方法
CNA2006101011916A CN1920630A (zh) 2000-05-12 2001-05-12 液晶显示装置及其制造方法
US10/879,587 US20040232421A1 (en) 2000-05-12 2004-06-30 Liquid crystal display device and fabrication method thereof
US10/879,635 US20050007507A1 (en) 2000-05-12 2004-06-30 Liquid crystal display device and fabrication method thereof
US11/522,466 US20070159568A1 (en) 2000-05-12 2006-09-18 Liquid crystal display device and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000144586A JP2001324725A (ja) 2000-05-12 2000-05-12 液晶表示装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001324725A true JP2001324725A (ja) 2001-11-22
JP2001324725A5 JP2001324725A5 (enExample) 2007-04-26

Family

ID=18651224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000144586A Abandoned JP2001324725A (ja) 2000-05-12 2000-05-12 液晶表示装置およびその製造方法

Country Status (5)

Country Link
US (4) US6762802B2 (enExample)
JP (1) JP2001324725A (enExample)
KR (1) KR100467993B1 (enExample)
CN (3) CN1268968C (enExample)
TW (1) TWI286257B (enExample)

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003297850A (ja) * 2002-04-02 2003-10-17 Advanced Display Inc 薄膜トランジスタアレイ及びその製造方法並びにこれを用いた液晶表示装置
JP2003347555A (ja) * 2002-05-28 2003-12-05 Chi Mei Electronics Corp 薄膜トランジスター液晶表示装置及びその薄膜トランジスター製作方法
JP2004038041A (ja) * 2002-07-05 2004-02-05 Chi Mei Electronics Corp 画像表示素子及び画像表示装置
JP2004070355A (ja) * 2002-07-31 2004-03-04 Lg Phillips Lcd Co Ltd 反射透過型液晶表示装置及びその製造方法
KR20040045598A (ko) * 2002-11-25 2004-06-02 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법
JP2004157543A (ja) * 2002-11-07 2004-06-03 Lg Philips Lcd Co Ltd 液晶表示装置用アレイ基板及びその製造方法
JP2004178839A (ja) * 2002-11-25 2004-06-24 Rohm Co Ltd 補助電極の形成方法
JP2005072135A (ja) * 2003-08-21 2005-03-17 Nec Lcd Technologies Ltd 液晶表示装置及び薄膜トランジスタの製造方法
JP2005086090A (ja) * 2003-09-10 2005-03-31 Advanced Display Inc Ｔｆｔアレイ基板の製造方法及び液晶表示装置
KR100494705B1 (ko) * 2002-01-18 2005-06-13 비오이 하이디스 테크놀로지 주식회사 액정표시소자의 박막트랜지스터 제조방법
JP2005173613A (ja) * 2003-12-10 2005-06-30 Samsung Electronics Co Ltd 薄膜トランジスタ表示板
JP2005173612A (ja) * 2003-12-10 2005-06-30 Samsung Electronics Co Ltd 薄膜トランジスタ表示板
JP2005201982A (ja) * 2004-01-13 2005-07-28 Nec Lcd Technologies Ltd 液晶表示装置及びその製造方法
JP2005257883A (ja) * 2004-03-10 2005-09-22 Nec Lcd Technologies Ltd 液晶表示装置
US6972434B2 (en) 2003-03-10 2005-12-06 Sharp Kabushiki Kaisha Substrate for display, method of manufacturing the same and display having the same
JP2006080487A (ja) * 2004-09-09 2006-03-23 Lg Phillips Lcd Co Ltd 薄膜トランジスタアレイ基板及びその製造方法
JP2006189768A (ja) * 2004-12-31 2006-07-20 Lg Phillips Lcd Co Ltd 液晶表示装置およびその製造方法
JP2006330201A (ja) * 2005-05-24 2006-12-07 Sharp Corp 液晶表示装置及びその製造方法
JP2006350327A (ja) * 2005-06-03 2006-12-28 Samsung Electronics Co Ltd 表示装置、その製造方法、及びその製造方法で使用されるマスク
US7161212B2 (en) 2004-02-10 2007-01-09 Nec Lcd Technologies, Ltd. Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
JP2007156442A (ja) * 2005-12-05 2007-06-21 Toppoly Optoelectronics Corp 低温ポリシリコン薄膜トランジスタ液晶ディスプレイ装置に用いられる積層蓄積容量構造
WO2007091405A1 (ja) * 2006-02-09 2007-08-16 Idemitsu Kosan Co., Ltd. 反射型ｔｆｔ基板及び反射型ｔｆｔ基板の製造方法
JP2007328066A (ja) * 2006-06-07 2007-12-20 Canon Inc 表示装置
JP2008003118A (ja) * 2006-06-20 2008-01-10 Epson Imaging Devices Corp 電気光学装置、電子機器、および電気光学装置の製造方法
JP2008310367A (ja) * 2003-06-30 2008-12-25 Hoya Corp グレートーンマスク及びその製造方法
US7476898B2 (en) 2004-04-14 2009-01-13 Nec Lcd Technologies, Ltd. Thin film and manufacturing method of the same
KR100891070B1 (ko) * 2002-12-03 2009-03-31 엘지디스플레이 주식회사 액정표시장치 제조방법
KR100897720B1 (ko) * 2002-11-27 2009-05-15 엘지디스플레이 주식회사 액정표시장치의 제조방법
JP2009124122A (ja) * 2007-10-23 2009-06-04 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010028103A (ja) * 2008-06-17 2010-02-04 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法
JP2011028285A (ja) * 2010-09-17 2011-02-10 Sharp Corp 液晶表示装置及びその製造方法
JP2012119659A (ja) * 2010-11-29 2012-06-21 Samsung Electronics Co Ltd 薄膜トランジスタ表示板の製造方法
KR101308454B1 (ko) 2007-02-21 2013-09-16 엘지디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
KR101319334B1 (ko) 2007-03-20 2013-10-16 엘지디스플레이 주식회사 액정표시패널 및 그의 제조방법
JP2013238718A (ja) * 2012-05-15 2013-11-28 Panasonic Corp 半導体装置及び半導体装置の製造方法
WO2014038501A1 (ja) * 2012-09-07 2014-03-13 シャープ株式会社 アクティブマトリクス基板、及び製造方法
JP2014068024A (ja) * 2007-12-21 2014-04-17 Semiconductor Energy Lab Co Ltd 表示装置
US8785934B2 (en) 2005-12-28 2014-07-22 Samsung Display Co., Ltd. Thin film transistor substrate for display panel
WO2014136612A1 (ja) * 2013-03-07 2014-09-12 シャープ株式会社 半導体装置およびその製造方法
US8835928B2 (en) 2010-09-21 2014-09-16 Sharp Kabushiki Kaisha Semiconductor device and process for production thereof
US8866142B2 (en) 2011-02-09 2014-10-21 Samsung Display Co., Ltd. Display device and manufacturing method thereof
JP2015029109A (ja) * 2009-02-25 2015-02-12 株式会社半導体エネルギー研究所 半導体装置
JP2015108836A (ja) * 2008-01-30 2015-06-11 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングＯＳＲＡＭ ＯＬＥＤ ＧｍｂＨ カプセル封入ユニットを有する装置
CN104952878A (zh) * 2014-03-28 2015-09-30 群创光电股份有限公司 显示面板
JP2016192563A (ja) * 2007-07-27 2016-11-10 株式会社半導体エネルギー研究所 表示装置
JP2017022389A (ja) * 2010-12-01 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
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JP2018022907A (ja) * 2008-07-31 2018-02-08 株式会社半導体エネルギー研究所 半導体装置
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US20010040648A1 (en) 2001-11-15
US20070159568A1 (en) 2007-07-12
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