IN2015DN01663A - - Google Patents
Info
- Publication number
- IN2015DN01663A IN2015DN01663A IN1663DEN2015A IN2015DN01663A IN 2015DN01663 A IN2015DN01663 A IN 2015DN01663A IN 1663DEN2015 A IN1663DEN2015 A IN 1663DEN2015A IN 2015DN01663 A IN2015DN01663 A IN 2015DN01663A
- Authority
- IN
- India
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- stacked film
- transistor
- electrical characteristics
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 10
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/402—Amorphous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13069—Thin film transistor [TFT]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012173388 | 2012-08-03 | ||
| PCT/JP2013/070950 WO2014021442A1 (en) | 2012-08-03 | 2013-07-25 | Oxide semiconductor stacked film and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2015DN01663A true IN2015DN01663A (enrdf_load_stackoverflow) | 2015-07-03 |
Family
ID=50024598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN1663DEN2015 IN2015DN01663A (enrdf_load_stackoverflow) | 2012-08-03 | 2013-07-25 |
Country Status (8)
Families Citing this family (127)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101968855B1 (ko) * | 2009-06-30 | 2019-04-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| KR102113160B1 (ko) * | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9190525B2 (en) | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
| WO2014024808A1 (en) | 2012-08-10 | 2014-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR20150043307A (ko) * | 2012-08-10 | 2015-04-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP6220597B2 (ja) | 2012-08-10 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW202422663A (zh) | 2012-09-14 | 2024-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9263531B2 (en) | 2012-11-28 | 2016-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film, film formation method thereof, and semiconductor device |
| US9153649B2 (en) | 2012-11-30 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for evaluating semiconductor device |
| JP6320009B2 (ja) | 2012-12-03 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9190527B2 (en) | 2013-02-13 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| US9368636B2 (en) | 2013-04-01 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers |
| KR102264971B1 (ko) | 2013-05-20 | 2021-06-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP6400336B2 (ja) | 2013-06-05 | 2018-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6435124B2 (ja) | 2013-07-08 | 2018-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6322503B2 (ja) | 2013-07-16 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6401977B2 (ja) | 2013-09-06 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI646690B (zh) | 2013-09-13 | 2019-01-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102183763B1 (ko) * | 2013-10-11 | 2020-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR102220450B1 (ko) * | 2013-12-02 | 2021-02-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| US9401432B2 (en) | 2014-01-16 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US20150263140A1 (en) * | 2014-03-14 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP6486712B2 (ja) * | 2014-04-30 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜 |
| US9379190B2 (en) * | 2014-05-08 | 2016-06-28 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
| TWI772799B (zh) * | 2014-05-09 | 2022-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI672804B (zh) * | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| TWI663726B (zh) | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
| KR102437450B1 (ko) * | 2014-06-13 | 2022-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치를 포함하는 전자 기기 |
| DE112015003266T5 (de) * | 2014-07-15 | 2017-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür und Anzeigevorrichtung mit der Halbleitervorrichtung |
| TWI588978B (zh) * | 2014-08-18 | 2017-06-21 | 群創光電股份有限公司 | 薄膜電晶體及顯示面板 |
| US10396210B2 (en) * | 2014-12-26 | 2019-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device |
| US9633710B2 (en) | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
| US10199283B1 (en) | 2015-02-03 | 2019-02-05 | Pdf Solutions, Inc. | Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage |
| US9799575B2 (en) | 2015-12-16 | 2017-10-24 | Pdf Solutions, Inc. | Integrated circuit containing DOEs of NCEM-enabled fill cells |
| WO2016125052A1 (ja) * | 2015-02-06 | 2016-08-11 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| WO2016139551A1 (en) * | 2015-03-03 | 2016-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| JP6705663B2 (ja) * | 2015-03-06 | 2020-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US10008609B2 (en) * | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| KR20160114511A (ko) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| US9842938B2 (en) * | 2015-03-24 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including semiconductor device |
| US9806200B2 (en) | 2015-03-27 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10714633B2 (en) | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| US10978438B1 (en) | 2015-12-16 | 2021-04-13 | Pdf Solutions, Inc. | IC with test structures and E-beam pads embedded within a contiguous standard cell area |
| US10593604B1 (en) | 2015-12-16 | 2020-03-17 | Pdf Solutions, Inc. | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells |
| WO2017141140A1 (en) | 2016-02-18 | 2017-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, display device, and electronic device |
| WO2017149428A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
| WO2017153882A1 (en) | 2016-03-11 | 2017-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
| WO2017153862A1 (en) | 2016-03-11 | 2017-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Composite and transistor |
| US9929063B1 (en) | 2016-04-04 | 2018-03-27 | Pdf Solutions, Inc. | Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates |
| US9653446B1 (en) | 2016-04-04 | 2017-05-16 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, TS-short-configured, and AA-short-configured, NCEM-enabled fill cells |
| US9905553B1 (en) | 2016-04-04 | 2018-02-27 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells |
| KR102320483B1 (ko) * | 2016-04-08 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102506007B1 (ko) | 2016-04-13 | 2023-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터의 제작 방법 |
| CN106158978B (zh) * | 2016-07-08 | 2019-05-21 | 武汉华星光电技术有限公司 | 薄膜晶体管、阵列基板及其制备方法 |
| JP6558326B2 (ja) * | 2016-08-23 | 2019-08-14 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置 |
| KR102755727B1 (ko) * | 2016-12-30 | 2025-01-15 | 엘지디스플레이 주식회사 | 산화물 박막트랜지스터 및 그 제조 방법과, 이를 이용한 표시패널 및 표시장치 |
| US9748153B1 (en) | 2017-03-29 | 2017-08-29 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure |
| US9773774B1 (en) | 2017-03-30 | 2017-09-26 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells |
| CN107146816B (zh) * | 2017-04-10 | 2020-05-15 | 华南理工大学 | 一种氧化物半导体薄膜及由其制备的薄膜晶体管 |
| US9768083B1 (en) | 2017-06-27 | 2017-09-19 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells |
| US9786649B1 (en) | 2017-06-27 | 2017-10-10 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells |
| US9865583B1 (en) | 2017-06-28 | 2018-01-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells |
| US10096530B1 (en) | 2017-06-28 | 2018-10-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells |
| CN107611085B (zh) * | 2017-10-24 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Oled背板的制作方法 |
| US12020517B2 (en) | 2018-01-26 | 2024-06-25 | Tadano Ltd. | Wireless communication device, work vehicle, and work vehicle wireless communication system |
| JP7137979B2 (ja) * | 2018-07-09 | 2022-09-15 | キオクシア株式会社 | 半導体装置 |
| WO2020084406A1 (ja) | 2018-10-26 | 2020-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US10978563B2 (en) | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11107929B2 (en) | 2018-12-21 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102789312B1 (ko) | 2019-04-05 | 2025-04-03 | 소니그룹주식회사 | 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치, 및, 촬상 소자의 제조 방법 |
| JP7637619B2 (ja) | 2019-06-21 | 2025-02-28 | 株式会社半導体エネルギー研究所 | 金属酸化物および半導体装置 |
| KR102708310B1 (ko) * | 2019-07-05 | 2024-09-24 | 주성엔지니어링(주) | 박막 트랜지스터 |
| KR102815117B1 (ko) * | 2019-08-19 | 2025-06-04 | 주성엔지니어링(주) | 박막 트랜지스터 및 이의 제조 방법 |
| KR102216132B1 (ko) | 2019-08-26 | 2021-02-16 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
| US11379231B2 (en) | 2019-10-25 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing system and operation method of data processing system |
| JP7026717B2 (ja) * | 2020-04-01 | 2022-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN111785656B (zh) * | 2020-07-28 | 2023-08-15 | 哈尔滨工业大学 | 电子器件氧化层中固定负电荷陷阱的检测方法 |
| JP2022038209A (ja) * | 2020-08-26 | 2022-03-10 | キオクシア株式会社 | 半導体装置 |
| KR20230063666A (ko) | 2021-11-02 | 2023-05-09 | 삼성전자주식회사 | 반도체 소자 |
| CN114141788A (zh) * | 2021-11-17 | 2022-03-04 | 惠州华星光电显示有限公司 | 显示面板及其制作方法 |
| CN115050838B (zh) | 2021-12-09 | 2024-12-24 | 友达光电股份有限公司 | 半导体装置及其制造方法 |
| JPWO2023189002A1 (enrdf_load_stackoverflow) | 2022-03-30 | 2023-10-05 | ||
| KR20240151222A (ko) | 2022-03-30 | 2024-10-17 | 가부시키가이샤 재팬 디스프레이 | 산화물 반도체막, 박막 트랜지스터 및 전자 기기 |
| JP2023149085A (ja) | 2022-03-30 | 2023-10-13 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| JPWO2023189003A1 (enrdf_load_stackoverflow) | 2022-03-30 | 2023-10-05 | ||
| JP2023149086A (ja) | 2022-03-30 | 2023-10-13 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| JPWO2023223657A1 (enrdf_load_stackoverflow) | 2022-05-19 | 2023-11-23 | ||
| JP2025517297A (ja) * | 2022-05-24 | 2025-06-05 | ジュスン エンジニアリング カンパニー リミテッド | 酸化物トランジスタ及びその製造方法 |
| KR20240169711A (ko) | 2022-05-26 | 2024-12-03 | 가부시키가이샤 재팬 디스프레이 | 반도체 장치 |
| CN119422456A (zh) | 2022-06-10 | 2025-02-11 | 株式会社日本显示器 | 薄膜晶体管及电子设备 |
| JP2024008440A (ja) | 2022-07-08 | 2024-01-19 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2024011504A (ja) | 2022-07-14 | 2024-01-25 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JPWO2024029429A1 (enrdf_load_stackoverflow) | 2022-08-01 | 2024-02-08 | ||
| KR20250023567A (ko) | 2022-08-01 | 2025-02-18 | 가부시키가이샤 재팬 디스프레이 | 산화물 반도체막, 박막 트랜지스터, 및 전자 기기 |
| JPWO2024029437A1 (enrdf_load_stackoverflow) | 2022-08-01 | 2024-02-08 | ||
| JP2024039361A (ja) | 2022-09-09 | 2024-03-22 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2024040960A (ja) | 2022-09-13 | 2024-03-26 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2024048269A (ja) | 2022-09-27 | 2024-04-08 | 株式会社ジャパンディスプレイ | 半導体装置の製造方法 |
| JP2024051551A (ja) | 2022-09-30 | 2024-04-11 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2024053987A (ja) | 2022-10-04 | 2024-04-16 | 株式会社ジャパンディスプレイ | 半導体装置及びその製造方法 |
| JP2024077307A (ja) | 2022-11-28 | 2024-06-07 | 株式会社ジャパンディスプレイ | 半導体装置 |
| WO2024154544A1 (ja) | 2023-01-19 | 2024-07-25 | 株式会社ジャパンディスプレイ | 酸化物半導体膜、薄膜トランジスタ、および電子機器 |
| WO2024154543A1 (ja) | 2023-01-19 | 2024-07-25 | 株式会社ジャパンディスプレイ | 積層構造体、薄膜トランジスタ、および電子機器 |
| JP2024121394A (ja) | 2023-02-27 | 2024-09-06 | 株式会社ジャパンディスプレイ | 半導体装置 |
| WO2024195631A1 (ja) | 2023-03-17 | 2024-09-26 | 株式会社ジャパンディスプレイ | 酸化物半導体膜、積層構造体、薄膜トランジスタ、および電子機器 |
| WO2024195629A1 (ja) | 2023-03-17 | 2024-09-26 | 株式会社ジャパンディスプレイ | 薄膜トランジスタおよび電子機器 |
| WO2024195630A1 (ja) | 2023-03-17 | 2024-09-26 | 株式会社ジャパンディスプレイ | 薄膜トランジスタおよび電子機器 |
| JP2024139916A (ja) | 2023-03-28 | 2024-10-10 | 株式会社ジャパンディスプレイ | 半導体装置、表示装置、及び半導体装置の製造方法 |
| JP2024139917A (ja) | 2023-03-28 | 2024-10-10 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
| JP2024145744A (ja) | 2023-03-31 | 2024-10-15 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の作製方法 |
| JP2024145782A (ja) | 2023-03-31 | 2024-10-15 | 株式会社ジャパンディスプレイ | 半導体装置及びその製造方法 |
| JP2024163588A (ja) | 2023-05-12 | 2024-11-22 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2024163719A (ja) | 2023-05-12 | 2024-11-22 | 株式会社ジャパンディスプレイ | 半導体装置及びその製造方法 |
| JP2025012144A (ja) | 2023-07-12 | 2025-01-24 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
| JP2025058431A (ja) | 2023-09-28 | 2025-04-09 | 株式会社ジャパンディスプレイ | 半導体装置およびその製造方法 |
| JP2025058604A (ja) | 2023-09-28 | 2025-04-09 | 株式会社ジャパンディスプレイ | 放射線検出装置 |
| JP2025059891A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2025059551A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2025059912A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2025059911A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2025060044A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP2025059540A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
| JP2025059883A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2025059541A (ja) | 2023-09-29 | 2025-04-10 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
Family Cites Families (152)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JP3397928B2 (ja) * | 1995-03-08 | 2003-04-21 | 三洋電機株式会社 | 半導体デバイス |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Ｈｏｙａ株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| JP2000182976A (ja) * | 1998-12-18 | 2000-06-30 | Tdk Corp | 半導体の製造方法 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法 |
| CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| KR20060060696A (ko) * | 2003-08-29 | 2006-06-05 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Ｉｔｏ박막 및 그 제조방법 |
| EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| CA2585190A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| WO2006051994A2 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| RU2358355C2 (ru) | 2004-11-10 | 2009-06-10 | Кэнон Кабусики Кайся | Полевой транзистор |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機ｅｌ表示装置およびその製造方法 |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP4981283B2 (ja) * | 2005-09-06 | 2012-07-18 | キヤノン株式会社 | アモルファス酸化物層を用いた薄膜トランジスタ |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| KR101397571B1 (ko) | 2005-11-15 | 2014-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제조방법 |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ＺｎＯ ＴＦＴ |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140984A (ja) * | 2006-12-01 | 2008-06-19 | Sharp Corp | 半導体素子、半導体素子の製造方法、及び表示装置 |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーｅｌディスプレイおよびその製造方法 |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ＺｎＯ 계 박막 트랜지스터 및 그 제조방법 |
| US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
| JP4555358B2 (ja) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
| KR100941850B1 (ko) | 2008-04-03 | 2010-02-11 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| JP5345456B2 (ja) | 2008-08-14 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| JP5606682B2 (ja) | 2009-01-29 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタ、多結晶酸化物半導体薄膜の製造方法、及び薄膜トランジスタの製造方法 |
| JP4415062B1 (ja) | 2009-06-22 | 2010-02-17 | 富士フイルム株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| JP4571221B1 (ja) | 2009-06-22 | 2010-10-27 | 富士フイルム株式会社 | Ｉｇｚｏ系酸化物材料及びｉｇｚｏ系酸化物材料の製造方法 |
| KR102153841B1 (ko) | 2009-07-31 | 2020-09-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101506124B1 (ko) * | 2009-09-04 | 2015-03-25 | 가부시끼가이샤 도시바 | 박막 트랜지스터 및 그 제조 방법 |
| KR101980505B1 (ko) * | 2009-10-08 | 2019-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체층, 반도체 장치 및 그 제조 방법 |
| JP5497417B2 (ja) | 2009-12-10 | 2014-05-21 | 富士フイルム株式会社 | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
| KR101035357B1 (ko) * | 2009-12-15 | 2011-05-20 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
| WO2011081009A1 (en) | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
| JP2011187506A (ja) | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| CN105810752B (zh) | 2010-04-02 | 2019-11-19 | 株式会社半导体能源研究所 | 半导体装置 |
| KR102436902B1 (ko) | 2010-04-02 | 2022-08-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI443829B (zh) * | 2010-04-16 | 2014-07-01 | Ind Tech Res Inst | 電晶體及其製造方法 |
| JP5606787B2 (ja) * | 2010-05-18 | 2014-10-15 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法、並びに、薄膜トランジスタ、イメージセンサー、ｘ線センサー及びｘ線デジタル撮影装置 |
| US8759820B2 (en) * | 2010-08-20 | 2014-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2012029596A1 (en) | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR102637010B1 (ko) * | 2010-12-03 | 2024-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| KR101680768B1 (ko) * | 2010-12-10 | 2016-11-29 | 삼성전자주식회사 | 트랜지스터 및 이를 포함하는 전자장치 |
| JP2012160679A (ja) | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
| US9166055B2 (en) | 2011-06-17 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20130007426A (ko) | 2011-06-17 | 2013-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102546888B1 (ko) | 2011-06-17 | 2023-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 |
| US8748886B2 (en) | 2011-07-08 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9214474B2 (en) | 2011-07-08 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8847220B2 (en) | 2011-07-15 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5925634B2 (ja) * | 2011-08-18 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 半導体の欠陥評価方法 |
| TWI562361B (en) | 2012-02-02 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US8901556B2 (en) * | 2012-04-06 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Insulating film, method for manufacturing semiconductor device, and semiconductor device |
| KR101621644B1 (ko) * | 2012-05-09 | 2016-05-16 | 가부시키가이샤 고베 세이코쇼 | 박막 트랜지스터 및 표시 장치 |
| KR102119914B1 (ko) | 2012-05-31 | 2020-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102071545B1 (ko) | 2012-05-31 | 2020-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102113160B1 (ko) | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8901557B2 (en) | 2012-06-15 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102161077B1 (ko) | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9190525B2 (en) | 2012-07-06 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including oxide semiconductor layer |
| KR20140009023A (ko) | 2012-07-13 | 2014-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US20140027762A1 (en) | 2012-07-27 | 2014-01-30 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2013
- 2013-07-25 IN IN1663DEN2015 patent/IN2015DN01663A/en unknown
- 2013-07-25 EP EP13826223.3A patent/EP2880690B1/en not_active Not-in-force
- 2013-07-25 WO PCT/JP2013/070950 patent/WO2014021442A1/en active Application Filing
- 2013-07-25 SG SG10201700805WA patent/SG10201700805WA/en unknown
- 2013-07-25 KR KR1020157004700A patent/KR102243843B1/ko not_active Expired - Fee Related
- 2013-07-25 SG SG11201505225TA patent/SG11201505225TA/en unknown
- 2013-07-29 US US13/953,428 patent/US8890159B2/en active Active
- 2013-07-29 TW TW102127118A patent/TWI605591B/zh not_active IP Right Cessation
- 2013-07-29 JP JP2013156486A patent/JP5980737B2/ja active Active
-
2014
- 2014-10-29 US US14/527,076 patent/US9123573B2/en active Active
-
2015
- 2015-07-30 US US14/813,408 patent/US9583570B2/en active Active
-
2016
- 2016-07-27 JP JP2016147025A patent/JP6212179B2/ja active Active
-
2017
- 2017-09-14 JP JP2017176306A patent/JP6479118B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016184771A (ja) | 2016-10-20 |
| JP2014045178A (ja) | 2014-03-13 |
| US9583570B2 (en) | 2017-02-28 |
| US20150349133A1 (en) | 2015-12-03 |
| JP2018011077A (ja) | 2018-01-18 |
| JP5980737B2 (ja) | 2016-08-31 |
| KR102243843B1 (ko) | 2021-04-22 |
| US20140034946A1 (en) | 2014-02-06 |
| EP2880690B1 (en) | 2019-02-27 |
| SG11201505225TA (en) | 2015-08-28 |
| EP2880690A1 (en) | 2015-06-10 |
| TW201419537A (zh) | 2014-05-16 |
| US9123573B2 (en) | 2015-09-01 |
| US20150048368A1 (en) | 2015-02-19 |
| US8890159B2 (en) | 2014-11-18 |
| JP6212179B2 (ja) | 2017-10-11 |
| SG10201700805WA (en) | 2017-02-27 |
| EP2880690A4 (en) | 2016-03-30 |
| TWI605591B (zh) | 2017-11-11 |
| KR20150038279A (ko) | 2015-04-08 |
| WO2014021442A1 (en) | 2014-02-06 |
| JP6479118B2 (ja) | 2019-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IN2015DN01663A (enrdf_load_stackoverflow) | ||
| AU2019268163A1 (en) | Perovskite and other solar cell materials | |
| JP2014045178A5 (enrdf_load_stackoverflow) | ||
| MY181178A (en) | Bi- and tri- layer interfacial layers in perovskite material devices | |
| JP2014045173A5 (ja) | 半導体装置 | |
| JP2014103389A5 (ja) | 半導体装置 | |
| MY173875A (en) | Photovoltaic devices | |
| IN2013DN02549A (enrdf_load_stackoverflow) | ||
| JP2011119711A5 (enrdf_load_stackoverflow) | ||
| JP2013149965A5 (enrdf_load_stackoverflow) | ||
| JP2014143410A5 (ja) | 半導体装置 | |
| JP2013175715A5 (ja) | 半導体装置 | |
| JP2012023352A5 (enrdf_load_stackoverflow) | ||
| JP2013179276A5 (enrdf_load_stackoverflow) | ||
| GB2497451A (en) | Gate insulator layer for electronic devices | |
| JP2011233221A5 (ja) | 半導体装置 | |
| JP2010212671A5 (ja) | 半導体装置 | |
| WO2014051740A3 (en) | Non-planar iii-v field effect transistors with conformal metal gate electrode & nitrogen doping of gate dielectric interface | |
| JP2011258941A5 (enrdf_load_stackoverflow) | ||
| JP2013042143A5 (enrdf_load_stackoverflow) | ||
| JP2012164978A5 (ja) | 半導体装置 | |
| WO2014172159A8 (en) | Defective p-n junction for backgated fully depleted silicon on insulator mosfet | |
| GB2516194A (en) | Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures | |
| JP2013153148A5 (ja) | 半導体装置の作製方法 | |
| MY158676A (en) | Photovoltaic devices and method of making |