EP2507299A2 - Oligogermanes chlorés et procédé de production associé - Google Patents
Oligogermanes chlorés et procédé de production associéInfo
- Publication number
- EP2507299A2 EP2507299A2 EP10787451A EP10787451A EP2507299A2 EP 2507299 A2 EP2507299 A2 EP 2507299A2 EP 10787451 A EP10787451 A EP 10787451A EP 10787451 A EP10787451 A EP 10787451A EP 2507299 A2 EP2507299 A2 EP 2507299A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- chlorinated
- mixture
- oligogermanes
- oligogerman
- chlorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
- C08G79/14—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing two or more elements other than carbon, oxygen, nitrogen, sulfur and silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Definitions
- the invention relates to chlorinated oligogermans and mixtures of chlorinated Oligogermanen having a molar ratio germanium: chlorine of 1: 2 to 1: 3 and a method for producing such chlorinated oligogermans and
- Germanium dichloride can be particularly thermally
- WO 08/110386 A1 discloses a process and an apparatus for the production of halogenated polygermanes from halogen germanes by plasma chemical means.
- Chlorpolygermanen with chlorine gas is described; Chloropolygermanes are degraded to pure GeCl 4 .
- chlorinated oligogermans according to the invention (as pure compound) or the mixture according to the invention of such chlorinated oligogermans have at least one direct bond germanium-germanium whose substituents comprise either chlorine or chlorine and hydrogen
- Chlorinated oligogermans as pure compound have a germanium: chlorine ratio of 1: 2 to 1: 2.67.
- Ratio of germanium chlorine 1: 1 to 1: 3, in particular from 1: 2 to 1: 3, and also an average number of
- Germanium atoms per molecule from 2 to less than or equal to 8.
- the inventive mixture of chlorinated oligogermans is to be understood in particular that only a portion of the compounds contained therein must have at least one direct bond germanium-germanium with the abovementioned substituents. As a rule, at least two such compounds with direct binding Germanium-germanium in the mixture will be included, but often three or more. in the
- chlorinated oligogermanes in particular compounds of the formula Ge n 2n + 2 with n less than or equal to 8 or mixtures
- chlorinated Oligogermane with an average n is less than or equal to 8, where X is in particular chlorine or chlorine and hydrogen. In individual cases can
- the chlorine content of the pure compounds or the average chlorine content of a mixture is determined in the context of this application by complete digestion of the sample and subsequent titration of the chlorides to Mohr.
- the determination of the hydrogen content is carried out by
- Oligogermans or the average molar masses of the mixtures thereof are determined by means of freezing point depression.
- chlorine content, molecular weight and optionally hydrogen content can be the same
- Chlorine Directly determine germanium ratio as well as the mean number of germanium atoms per molecule.
- the chlorinated oligogermans according to the invention may, according to one embodiment, be chlorinated by chlorination
- Polygermanen be prepared. Thus produced
- Chlorinated oligogermans then generally have an increased kinetic stability, in particular what the other
- the chlorinated oligogermans are particularly suitable for applications where the chlorinated
- German be further processed under oxidizing conditions.
- oxidizing atmospheres such as chlorine gas-containing atmospheres
- the invention provides a plurality of the invention. According to one embodiment, the invention
- Oligogermans can be obtained by cleaving chlorinated polygermans (PCG) using an oxidizing agent.
- Oxidizing agent can be used in particular chlorine and / or HCl, wherein the cleavage can also be carried out so that either an excess of the
- Oxidizing agent is present or that the oxidizing agent is always present only in low concentration.
- the chlorinated polygermans used as starting material can in particular thermally according to Holleman Wiberg, Textbook of Inorganic Chemistry, Walter De Gruyter Verlag, 102.
- HECls Trichlorogerman distilled at about 75 ° C and decomposes in GeCl2 and HCl.
- plasma-chemically obtained chlorinated polygermanes can also be used as starting material, in particular chlorinated polygermanes as described in WO 2008/110386 A1, with regard to the content of the preparation process described therein
- chlorinated polygermanes can also be produced in a plasma-chemical manner analogous to the chlorinated polysilanes, the
- this is a power density to be mentioned, which corresponds to about 50 to 67% of the power density (in watts per cm 3 ), which is described in the aforementioned two publications.
- Solubility in inert solvents as at least one, usually more of the respective individual components of the mixture, if these individual components more than 3
- the individual components are in particular all the components which are contained in the mixture at least to a proportion of 1% by weight. Further are in particular, the perchlorinated compounds n-tetragerman, isotetragerman, n-pentagerman, isopentagerman and / or neopentagerman should be mentioned here as individual components. Usually, the solubility of the mixture of oligogermanes is at least one of these compounds, usually three or more than three of them
- Solvents include toluene, benzene and cyclohexane.
- the above-mentioned mixture of oligogermanes according to the invention preferably has a higher one in at least one or more of said preferred solvents
- Solvents is mentioned, this means that in the specific solvent at room temperature, a larger amount of the chemical compound or the mixture of chemical compounds can be solved until saturation is reached, with a maximum of 5 wt .-% of the amount used may remain as a solid ,
- the relevant amount here is not the molar amount, but the mass used (in g) of just barely soluble Oligogermans
- Solubilizers act.
- the mixture according to the invention of oligo -ermanes is also superior to the pure individual compounds, since not only the higher kinetic stability is advantageous, but - if working in solution - as a rule even more solvent has to be used for a specific further use.
- chlorinated Oligogermangemische invention higher solubility in inert solvents than the thermally prepared chlorinated polygermane according to the prior art according to Holleman Wiberg, textbook of inorganic
- Solvent but usually in several or all of the solvents mentioned have a better solubility.
- a particularly interesting fraction of the chlorinated oligomer mixtures according to the invention is the fraction which essentially contains no germanium tetrachloride, no Ge 2 Cl 6 and no GesCIs.
- This fraction can be fractionated by Distillation can be isolated from an obtained crude mixture of chlorinated oligogermans according to the invention and is hereinafter referred to as "fraction of compounds having more than three germanium atoms".
- germanium tetrachloride, Ge2Cl6 and GesCls may be replaced by a
- Distillation at 0.01 to 0.1 hPa ie, for example, in an oil pump vacuum
- room temperature are removed in order to separate the fraction of compounds having more than three germanium atoms can.
- germanium atoms can be obtained by distillation or else by crystallization and thus substantially no longer has germanium tetrachloride, hexachlorodigerman and octachlorotrigerman. Essentially, this means that a maximum of 10 wt .-% of said compounds are contained, usually the proportion of these three
- Germanium atoms usually has an elevated
- Branching degree (as can be demonstrated by IR or Raman spectroscopy) and possesses
- germanium atoms which have bonds to three further germanium atoms (ie tertiary germanium atoms) and with
- Germanium atoms the bonds to four others
- germanium atoms that is, are quaternary germanium atoms. Further, for certain applications (e.g. the deposition of germanium layers) such branched chlorinated Oligogermane with respect to GeCl 4 , Ge 2 Cl6 and GesCls reduced chlorine content or higher
- Germanium content is preferred because they have an increased reactivity over these.
- the fraction comprises
- Compounds having more than three germanium atoms have a proportion of branching points of more than 8 atomic%, in particular more than 11 atomic%. In other words, at least 8% and in particular more than 11% of the germanium atoms contained in the mixture are tertiary or quaternary germanium atoms.
- the degree of branching points can hereby be determined by means of the Raman spectra on the basis of the significant bands for vibrations of germanium-germanium bonds in which tertiary or quaternary germanium atoms are involved.
- the perchlorinated neopentagerman has a fraction of at least 10 atomic%, in particular more than 18 atomic%, in particular more than 25 atomic%. Due to the highly symmetric structure of the neopentagermane and the associated relatively low half - width of the signals obtained, the proportion of this compound can be measured quantitatively by means of the signal for the quaternary germanium atom can be determined by Ge-NMR. The content can be compared with an internal reference substance known amount (for example, an ampoule with
- Tetramethylgermanium can be determined by integration.
- the fraction of the chlorinated oligogermin mixtures has more than 3
- Germanium atoms have a germanium: chlorine ratio of 1: 2.2 to 1: 2.5, in particular from 1: 2.25 to 1: 2.4.
- Ge 2 Cl6 is particularly high.
- the proportion of Ge 2 Cl 6 can then be at least 70% by weight, in particular more than 85% by weight and preferably more than 95% by weight. If HCl is used as the chlorinating agent, then in particular a significant proportion of Ge 2 ClsH may also be present. According to a further embodiment, the
- chlorinated oligogermans have an average number of germanium atoms per molecule of 3 to 8. According to a further embodiment, the chlorinated oligogerman or the mixture thereof one
- Hydrogen content which is less than 2 atomic%, in particular less than 1 atomic%.
- the hydrogen substituents in the chlorinated oligogerman may originate in particular from the oxidation by means of HCl or already from the starting material as well as the chlorinated polygermanes
- production-dependent hydrogen substituents may have.
- all compounds mentioned in the context of the present application are subject to the usual purity levels. This means that the purity of a compound which consists of certain types of atom or a mixture of several such individual compounds (which may include GeCl 4 ) is at least 99.5%, often at least 99, 95% and that the proportion of In particular, impurities are less than 10 ppm (always meaning% by weight).
- impurities are less than 10 ppm (always meaning% by weight).
- chlorine atoms may be replaced in part by bromine substituents. These then do not apply as contamination in the above sense.
- chloro-oligogerman according to the invention as a single compound more than 2 atomic%, in particular more than 2.8 atomic%
- S1 2 Cl 5 H can also be produced by reaction with HCl and obtained by distillation as a pure substance.
- the hydrogen contents mentioned in the context of this application can be determined as described above by means of 1 H-NMR spectroscopy. The observed
- the chlorinated oligogermans or the mixtures thereof have significant bands in the Raman spectrum at less than 600 wavenumbers, in particular between 500 and 370, furthermore especially at ⁇ 320 wavenumbers.
- a significant band here and hereinafter is generally to be understood as a band whose intensity is greater than 10% of the intensity-strongest band of the Raman spectrum.
- the mixture of the chlorinated oligogermans may in particular be colorless to pale yellow or ivory white in color. It is particularly noticeable as a liquid or at least partially crystalline substance.
- the viscosity of the liquid fraction at room temperature is less than 1000 mPas, preferably less than 400 mPas.
- the crystallinity can be determined by means of X-ray powder diffractometry, since crystalline signals give rise to significant signals which naturally can not occur with liquid or viscous compounds.
- this is chlorinated
- Solvent easily soluble. Easily soluble means that concentrations of at least 10% by weight can be brought into solution.
- the concentrations of at least 10% by weight can be brought into solution.
- chlorinated oligogermanes or oligogerman mixtures according to the invention in at least one of the solvents benzene, toluene and cyclohexane, often even in all three solvents, the solubility properties according to this embodiment.
- the solubility properties according to this embodiment As slightly soluble in the sense of
- This application also applies chlorinated Oligogermangemische in which a non-soluble residue of not more than 5 wt .-% of the amount used remains (in a solution with 10 wt .-% dissolved chlorinated oligosilane means that a maximum of 0.5 wt .-% may remain as undissolved solid) , Frequently, however, a complete dissolution of the chlorinated Oligogermangemisches done.
- At least 20% by weight of the above soluble fraction is distillable under reduced pressure, in particular at a pressure of from 0.01 to 1 hPa, without decomposition. This requirement is fulfilled in particular
- the invention further relates to a process for the preparation of the chlorinated Oligogermane or
- Oligogermangemische according to one of the aforementioned embodiments.
- the process comprises the following steps: A) providing a chlorinated polygerman;
- Chlorination of the chlorinated polygerman with chlorine, a chlorine-releasing compound and / or a chlorine-containing gas is considered to be the chlorine-containing gas.
- Chlorine is in particular present as Cl 2 and chlorine-releasing compounds are in particular
- the following temperature conditions and / or pressure conditions prevail in process step B), wherein in most cases both the following pressure conditions and the following temperature conditions are present.
- the temperature in process step B) is -60 ° C to 200 ° C, especially -30 to 40 ° C, for example -10 to 25 ° C.
- the pressure is in particular 200 to 2000 hPa, for example 800 to 1500 hPa.
- the chlorination according to process step B) is followed by fractional distillation, with which
- germanium atoms are separated in the molecule.
- GeCl 4 , Ge2Cl6 and GesCls are thus used
- Chlorination in step B) take place.
- the diluents may subsequently be distilled off again and optionally also the distilled-off diluents (recycled as it were) again serve as a diluent.
- the diluents may subsequently be distilled off again and optionally also the distilled-off diluents (recycled as it were) again serve as a diluent.
- Processes according to the invention are carried out in such a way that an excess of the chlorinating agent, in particular an excess of HCl, is present during step B).
- an excess may be present according to the invention if free HCl is continuously present in the reaction mixture, for example in such a way that the solution is saturated with HCl.
- step B) continuously further
- Chlorinating agent is frequently Cl 2 in such molar
- the chlorination can be carried out so that a particularly long reaction time with the - as stated above - steadily in the molar deficit
- present Cl 2 is selected. If a significant proportion of Ge 2 ClsH is to be formed, then HCl instead of Cl 2 (or another non-hydrogen-containing chlorinating agent) should be used as the chlorinating agent. If a particularly low proportion of Ge 2 Cl6 is desired, then the
- Reaction can be carried out at low temperatures and a be careful to add the Cl 2 .
- the total supplied molar amount of chlorine should be adjusted accordingly, for example so that the supplied amount of chlorine at known chlorine: germanium ratio of Chlorpoylgermans used is chosen so that automatically a certain chlorine: germanium ratio of the obtained Chloroligogermangemisch must result.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Silicon Polymers (AREA)
- Chemical Vapour Deposition (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Catalysts (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
La présente invention concerne des oligogermanes chlorés sous forme de composé pur ou de mélange de composés, ainsi qu'un procédé de production desdits oligogermanes. Ces oligogermanes chlorés sous forme de composés purs ou de mélange de composés comportent chacun au moins une liaison directe Ge-Ge dont les substituants comprennent le chlore ou le chlore et l'hydrogène, et dans leur composition, le rapport atomique substituant/germanium est d'au moins 1/1, le mélange présentant en moyenne un rapport Ge/Cl de 1/2 à 1/3 ou le composé pur présentant un rapport Ge/Cl de 1/2 à 1/2,67, de préférence de 1/2 à 1/2,5, et les mélanges présentant un nombre moyen d'atomes de germanium de 2 à 10.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009056731A DE102009056731A1 (de) | 2009-12-04 | 2009-12-04 | Halogenierte Polysilane und Polygermane |
PCT/EP2010/068986 WO2011067413A2 (fr) | 2009-12-04 | 2010-12-06 | Oligogermanes chlorés et procédé de production associé |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2507299A2 true EP2507299A2 (fr) | 2012-10-10 |
Family
ID=43499339
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10787448A Withdrawn EP2507169A1 (fr) | 2009-12-04 | 2010-12-06 | Procédé d'extraction d'impuretés contenues dans du silicium |
EP10792879.8A Not-in-force EP2507172B1 (fr) | 2009-12-04 | 2010-12-06 | Procede de preparation d'un polygermasilane hydrogene et polygermasilane hydrogene |
EP10787123A Withdrawn EP2507317A1 (fr) | 2009-12-04 | 2010-12-06 | Procédé de production de polygermane hydrogéné et polygermane hydrogéné ainsi obtenu |
EP10787451A Withdrawn EP2507299A2 (fr) | 2009-12-04 | 2010-12-06 | Oligogermanes chlorés et procédé de production associé |
EP10787124.6A Revoked EP2507296B1 (fr) | 2009-12-04 | 2010-12-06 | Polysilanes chlorés cinétiquement stables et leur production et utilisation |
EP10793199.0A Revoked EP2507174B1 (fr) | 2009-12-04 | 2010-12-06 | Procédé de préparation de polysilanes halogénés |
EP10788316A Withdrawn EP2507171A1 (fr) | 2009-12-04 | 2010-12-06 | Procédé de préparation de polygermasilane hydrogéné et polygermasilane hydrogéné |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10787448A Withdrawn EP2507169A1 (fr) | 2009-12-04 | 2010-12-06 | Procédé d'extraction d'impuretés contenues dans du silicium |
EP10792879.8A Not-in-force EP2507172B1 (fr) | 2009-12-04 | 2010-12-06 | Procede de preparation d'un polygermasilane hydrogene et polygermasilane hydrogene |
EP10787123A Withdrawn EP2507317A1 (fr) | 2009-12-04 | 2010-12-06 | Procédé de production de polygermane hydrogéné et polygermane hydrogéné ainsi obtenu |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10787124.6A Revoked EP2507296B1 (fr) | 2009-12-04 | 2010-12-06 | Polysilanes chlorés cinétiquement stables et leur production et utilisation |
EP10793199.0A Revoked EP2507174B1 (fr) | 2009-12-04 | 2010-12-06 | Procédé de préparation de polysilanes halogénés |
EP10788316A Withdrawn EP2507171A1 (fr) | 2009-12-04 | 2010-12-06 | Procédé de préparation de polygermasilane hydrogéné et polygermasilane hydrogéné |
Country Status (9)
Country | Link |
---|---|
US (7) | US20130043429A1 (fr) |
EP (7) | EP2507169A1 (fr) |
JP (6) | JP6297778B2 (fr) |
CN (3) | CN102639609B (fr) |
BR (2) | BR112012014106A2 (fr) |
CA (2) | CA2782247A1 (fr) |
DE (1) | DE102009056731A1 (fr) |
TW (7) | TW201139283A (fr) |
WO (7) | WO2011067416A1 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
JP5856609B2 (ja) | 2010-05-28 | 2016-02-10 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | リチウム硫黄電流生成セルの正極に使用される固体複合材料及びその製造方法並びにリチウム硫黄電流生成セル |
KR101250172B1 (ko) * | 2012-08-20 | 2013-04-05 | 오씨아이머티리얼즈 주식회사 | 고수율로 모노 게르만 가스를 제조하는 방법 |
DE102012224202A1 (de) * | 2012-12-21 | 2014-07-10 | Evonik Industries Ag | Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen |
DE102013207447A1 (de) * | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan |
DE102013207444A1 (de) * | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen |
US9174853B2 (en) | 2013-12-06 | 2015-11-03 | Gelest Technologies, Inc. | Method for producing high purity germane by a continuous or semi-continuous process |
DE102014007685B4 (de) | 2014-05-21 | 2022-04-07 | Sven Holl | Verfahren zur Herstellung von Hexachlordisilan |
DE102014007766A1 (de) * | 2014-05-21 | 2015-11-26 | Psc Polysilane Chemicals Gmbh | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
DE102014007767A1 (de) * | 2014-05-21 | 2015-11-26 | Psc Polysilane Chemicals Gmbh | Verfahren und Vorrichtung zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
DE102014007768A1 (de) | 2014-05-21 | 2015-11-26 | Psc Polysilane Chemicals Gmbh | Verfahren zur Herstellung von Mischungen chlorierter Silane mit erhöhten Anteilen von Si4Cl10 und/oder Si5Cl12 |
KR20170035981A (ko) * | 2014-07-22 | 2017-03-31 | 모멘티브 퍼포먼스 머티리얼즈 게엠베하 | 모노실란, 폴리실란, 및/또는 올리고실란에서 규소-규소 결합 및/또는 규소-염소 결합의 분해 방법 |
DE102014013250B4 (de) * | 2014-09-08 | 2021-11-25 | Christian Bauch | Verfahren zur Aufreinigung halogenierter Oligosilane |
EP3233728A1 (fr) * | 2014-12-15 | 2017-10-25 | Nagarjuna Fertilizers and Chemicals Limited | Procédé de production d'oligosilanes chlorés |
DE102016014900A1 (de) * | 2016-12-15 | 2018-06-21 | Psc Polysilane Chemicals Gmbh | Verfahren zur Erhöhung der Reinheit von Oligosilanen und Oligosilanverbindungen |
DE102016225872A1 (de) * | 2016-12-21 | 2018-06-21 | Evonik Degussa Gmbh | Verfahren zur Trennung von Gemischen höherer Silane |
EP3596117A4 (fr) | 2017-03-17 | 2021-01-13 | The Johns Hopkins University | Thérapie épigénétique ciblée contre l'élément de régulation distale d'expression du tgfb2 |
BR112020022271A2 (pt) * | 2018-05-02 | 2021-02-23 | Hysilabs, Sas | processo para produzir e regenerar compostos carreadores de hidrogênio |
JP7125062B2 (ja) * | 2019-01-25 | 2022-08-24 | 株式会社東芝 | 判定方法及び処理方法 |
Family Cites Families (109)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1049835B (de) | 1959-02-05 | Kali-Chemie Aktiengesellschaft, Hannover | Verfahren zur Herstellung von Siliciumhydriden | |
DE108077C (fr) | ||||
DE340912C (de) | 1916-04-15 | 1921-09-21 | Frank Robert Mc Berty | Einrichtung fuer Fernsprechanlagen |
GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
GB793718A (en) | 1955-08-16 | 1958-04-23 | Standard Telephones Cables Ltd | Improvements in or relating to methods of producing silicon of high purity |
GB832333A (en) | 1956-09-28 | 1960-04-06 | Standard Telephones Cables Ltd | Improvements in methods of producing silane of high purity |
DE1034159B (de) | 1956-11-03 | 1958-07-17 | Kali Chemie Ag | Verfahren zur Herstellung von Siliciumhydriden |
DE1061302B (de) | 1956-12-12 | 1959-07-16 | Kali Chemie Ag | Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. und V. Gruppe des Periodischen Systems |
DE1055511B (de) | 1956-12-15 | 1959-04-23 | Kali Chemie Ag | Verfahren zur Herstellung von Wasserstoffverbindungen der Elemente der IV. Hauptgruppe des Periodischen Systems mit den Ordnungszahlen 14 bis 50 |
GB823496A (en) | 1957-12-27 | 1959-11-11 | Metal Hydrides Inc | Improvements in method of preparing high purity silicon |
GB851962A (en) | 1958-06-09 | 1960-10-19 | Allied Chem | Production of pure silane |
DE1098931B (de) | 1958-07-03 | 1961-02-09 | Wacker Chemie Gmbh | Verfahren zur Reinigung von geschmolzenem Silicium |
US3050366A (en) | 1959-07-15 | 1962-08-21 | Du Pont | Production of silane by the use of a zinc catalyst |
DE1096341B (de) | 1959-10-15 | 1961-01-05 | Kali Chemie Ag | Verfahren zur Herstellung von Monosilan |
DE1187614B (de) | 1963-07-02 | 1965-02-25 | Bayer Ag | Verfahren zur Herstellung von vorzugsweise organisch substituierten Wasserstoffverbindungen der Elemente Bor und Silicium |
FR1429930A (fr) | 1964-04-17 | 1966-02-25 | Thomson Houston Comp Francaise | Perfectionnements aux méthodes de préparation des hydrures |
DE1568255A1 (de) | 1965-03-03 | 1970-03-19 | Ceskoslovenska Akademie Ved | Verfahren zur Reduktion von Halosiliciumverbindungen |
US3401183A (en) | 1965-12-23 | 1968-09-10 | Gen Electric | Method for preparing organo germanium, tin and silicon hydrides |
US3704261A (en) | 1971-10-18 | 1972-11-28 | Gen Electric | Preparation of silicon hydrides |
BE794871A (fr) | 1972-02-02 | 1973-08-01 | Rhone Poulenc Sa | Nouvelles sulfones isopreniques |
US3926833A (en) | 1973-03-21 | 1975-12-16 | Lithium Corp | Preparation of mixed chlorohydrides of aluminum |
FR2430917A1 (fr) | 1978-07-11 | 1980-02-08 | Comp Generale Electricite | Procede et dispositif d'elaboration de silicium polycristallin |
US4200621A (en) | 1978-07-18 | 1980-04-29 | Motorola, Inc. | Sequential purification and crystal growth |
US4295986A (en) | 1979-05-14 | 1981-10-20 | Gordon Roy G | Low temperature catalytic reduction |
US4309259A (en) | 1980-05-09 | 1982-01-05 | Motorola, Inc. | High pressure plasma hydrogenation of silicon tetrachloride |
US4312849A (en) | 1980-09-09 | 1982-01-26 | Aluminum Company Of America | Phosphorous removal in silicon purification |
DE3034957C2 (de) | 1980-09-17 | 1983-01-13 | Degussa Ag, 6000 Frankfurt | Verfahren und Vorrichtung zum Innenbeschichten von Kontaktrohren |
US4374111A (en) | 1980-11-21 | 1983-02-15 | Allied Corporation | Production of silane |
EP0054650B1 (fr) | 1980-12-24 | 1986-01-29 | Hüls Troisdorf Aktiengesellschaft | Procédé pour la purification de chlorosilanes |
US4374110A (en) * | 1981-06-15 | 1983-02-15 | Motorola, Inc. | Purification of silicon source materials |
JPS58156522A (ja) | 1982-03-11 | 1983-09-17 | Mitsui Toatsu Chem Inc | ジシランの製造方法 |
JPS59500416A (ja) | 1982-03-18 | 1984-03-15 | ゼネラル・エレクトリック・カンパニイ | ハロゲン化けい素の精製法 |
US4755370A (en) | 1982-03-18 | 1988-07-05 | General Electric Company | Purification of silicon halides |
US4407783A (en) | 1982-08-16 | 1983-10-04 | Allied Corporation | Producing silane from silicon tetrafluoride |
FR2532293A1 (fr) | 1982-08-31 | 1984-03-02 | Rhone Poulenc Spec Chim | Procede continu de preparation de silane |
US4529707A (en) | 1982-09-21 | 1985-07-16 | General Electric Company | Detection of boron impurities in chlorosilanes |
FR2533906A1 (fr) | 1982-09-30 | 1984-04-06 | Rhone Poulenc Spec Chim | Procede et dispositif pour la preparation de silane pur par reaction de chlorosilanes avec l'hydrure de lithium |
JPS60500251A (ja) | 1982-12-13 | 1985-02-28 | エシル コ−ポレ−シヨン | シランの製造方法 |
US4632816A (en) * | 1982-12-13 | 1986-12-30 | Ethyl Corporation | Process for production of silane |
DE3247362A1 (de) | 1982-12-22 | 1984-06-28 | Studiengesellschaft Kohle mbH, 4330 Mülheim | Verfahren zur herstellung von silicium-wasserstoff-verbindungen, insbesondere des silans |
DE3342496A1 (de) | 1983-11-24 | 1985-06-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum reinigen von mg-silicium |
JPS60176915A (ja) | 1984-02-21 | 1985-09-11 | Central Glass Co Ltd | ジシランの製造法 |
JPS60221322A (ja) * | 1984-04-13 | 1985-11-06 | Mitsui Toatsu Chem Inc | ゲルマン類の製法 |
FR2576902B1 (fr) | 1985-02-04 | 1987-02-13 | Rhone Poulenc Spec Chim | Procede de fabrication d'hydrogeno-silanes |
US4778692A (en) * | 1985-02-20 | 1988-10-18 | Canon Kabushiki Kaisha | Process for forming deposited film |
JPS61191022A (ja) * | 1985-02-20 | 1986-08-25 | Canon Inc | 堆積膜形成法 |
JPS61191512A (ja) | 1985-02-20 | 1986-08-26 | Toagosei Chem Ind Co Ltd | ジシランの製造方法 |
JPH0688773B2 (ja) * | 1985-03-08 | 1994-11-09 | 三井東圧化学株式会社 | ヘキサクロロジシランの製造方法 |
US4725419A (en) | 1985-05-17 | 1988-02-16 | Ethyl Corporation | Silane production from magnesium hydride |
EP0316472A1 (fr) | 1987-11-17 | 1989-05-24 | Ethyl Corporation | Production de silane à partir d'hydrure de magnésium |
JPS6217004A (ja) * | 1985-07-12 | 1987-01-26 | Mitsui Toatsu Chem Inc | ゲルマン類の製造方法 |
US4824657A (en) | 1985-11-27 | 1989-04-25 | E. I. Du Pont De Nemours And Company | Process for reducing silicon, germanium and tin halides |
US4777023A (en) | 1986-02-18 | 1988-10-11 | Solarex Corporation | Preparation of silicon and germanium hydrides containing two different group 4A atoms |
US4792460A (en) * | 1986-07-15 | 1988-12-20 | Electric Power Research Institute, Inc. | Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium |
DE3635064A1 (de) | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
US4762808A (en) | 1987-06-22 | 1988-08-09 | Dow Corning Corporation | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes |
US4847061A (en) | 1987-07-20 | 1989-07-11 | Ethyl Corporation | Process for preparation of silane |
JP2536027B2 (ja) | 1988-03-16 | 1996-09-18 | 東亞合成株式会社 | ジシランの製造方法 |
US4855120A (en) | 1988-10-24 | 1989-08-08 | Ethyl Corporation | Production of silane and useful coproducts |
DE3926595A1 (de) | 1989-08-11 | 1991-02-14 | Degussa | Verfahren zur hydrierung halogensubstituierter verbindungen |
JPH03205055A (ja) | 1990-01-04 | 1991-09-06 | Hara Herusu Kogyo Kk | 浴槽の気泡発生装置 |
US5061470A (en) | 1990-08-03 | 1991-10-29 | Ethyl Corporation | Silane production from hydridomagnesium chloride |
JPH04130010A (ja) | 1990-09-20 | 1992-05-01 | Toagosei Chem Ind Co Ltd | ジシランの製造方法 |
JP2965094B2 (ja) * | 1991-06-28 | 1999-10-18 | キヤノン株式会社 | 堆積膜形成方法 |
DE4239246C1 (de) * | 1992-11-21 | 1993-12-16 | Goldschmidt Ag Th | Verfahren zur Herstellung von SiH-Gruppen aufweisenden Organopolysiloxanen |
DE4306106A1 (de) | 1993-02-27 | 1994-09-01 | Thomas Dipl Chem Lobreyer | Verfahren zur Herstellung von Silylgermanen |
DE4313130C1 (de) | 1993-04-22 | 1994-05-26 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
JPH08231949A (ja) * | 1995-02-22 | 1996-09-10 | Osaka Gas Co Ltd | 有機電界発光素子 |
JPH09237927A (ja) * | 1995-12-26 | 1997-09-09 | Toshiba Corp | 半導体薄膜形成方法および太陽電池の製造方法 |
US5866471A (en) * | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
DE19812587C1 (de) | 1998-03-23 | 1999-09-23 | Wolfgang Sundermeyer | Verfahren zur Hydrierung halogensubstituierter Siliziumverbindungen |
JP2002246384A (ja) | 2001-02-21 | 2002-08-30 | Jsr Corp | シリコン酸化膜の形成方法および形成用組成物 |
FR2827592B1 (fr) | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
KR100434698B1 (ko) * | 2001-09-05 | 2004-06-07 | 주식회사 하이닉스반도체 | 반도체소자의 선택적 에피성장법 |
TWI231750B (en) | 2002-07-17 | 2005-05-01 | Delta Tooling Co Ltd | Seat structure |
WO2005015609A2 (fr) | 2003-06-13 | 2005-02-17 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Sixsnyge1- x-y et heterostructures d'alliage associees a base de si, de ge et de sn |
US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
DE10337309A1 (de) | 2003-08-14 | 2005-03-10 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
US7498015B1 (en) * | 2004-02-27 | 2009-03-03 | Kovio, Inc. | Method of making silane compositions |
US7314513B1 (en) * | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
US7485691B1 (en) * | 2004-10-08 | 2009-02-03 | Kovio, Inc | Polysilane compositions, methods for their synthesis and films formed therefrom |
EP1867604B1 (fr) | 2005-04-07 | 2013-05-15 | Toagosei Co., Ltd. | Procede de purification d hexachlorure de disilicium et hexachlorure de disilicium de purete elevee |
DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
US7943721B2 (en) | 2005-10-05 | 2011-05-17 | Kovio, Inc. | Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions |
EP1960310B1 (fr) | 2005-11-23 | 2013-08-21 | THE ARIZONA BOARD OF REGENTS, a body corporate acting on behalf of ARIZONA STATE UNIVERSITY | Nouveaux hydrures de silicium-germanium et leurs méthodes de production et d'utilisation |
US8133802B2 (en) | 2005-11-23 | 2012-03-13 | Arizona Board Of Regents | Silicon-germanium hydrides and methods for making and using same |
NO326254B1 (no) * | 2005-12-22 | 2008-10-27 | Sinvent As | Fremgangsmate for fremstilling av silan |
JP2007254593A (ja) * | 2006-03-23 | 2007-10-04 | Jsr Corp | ゲルマニウムポリマー、その製造法およびゲルマニウム膜の形成方法 |
KR101269201B1 (ko) * | 2006-06-30 | 2013-05-28 | 삼성전자주식회사 | 폐 루프 방식의 다중 안테나 시스템에서 데이터송/수신장치 및 방법 |
DE102006034061A1 (de) * | 2006-07-20 | 2008-01-24 | REV Renewable Energy Ventures, Inc., Aloha | Polysilanverarbeitung und Verwendung |
AU2007298104A1 (en) | 2006-09-29 | 2008-03-27 | Shin-Etsu Chemical Co., Ltd. | Method for purification of silicon, silicon, and solar cell |
WO2008045327A2 (fr) * | 2006-10-06 | 2008-04-17 | Kovio, Inc. | Polymères de silicium, procédés pour polymériser des composés de silicium, et procédés pour former des films minces de polymères de silicium |
WO2008051328A1 (fr) | 2006-10-24 | 2008-05-02 | Dow Corning Corporation | Composition comprenant du néopentasilane et procédé de préparation |
DE102007007874A1 (de) | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Silane |
DE102007013219A1 (de) | 2007-03-15 | 2008-09-18 | Rev Renewable Energy Ventures, Inc. | Plasmagestützte Synthese |
CN101687651B (zh) * | 2007-03-30 | 2013-04-24 | 斯伯恩特私人有限公司 | 催化氢化 |
US8530589B2 (en) * | 2007-05-04 | 2013-09-10 | Kovio, Inc. | Print processing for patterned conductor, semiconductor and dielectric materials |
JP4714198B2 (ja) | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | クロロシラン類の精製方法 |
DE102007000841A1 (de) | 2007-10-09 | 2009-04-16 | Wacker Chemie Ag | Verfahren zur Herstellung von hochreinem Hexachlordisilan |
DE102008025263B4 (de) | 2008-05-27 | 2015-08-06 | Spawnt Private S.À.R.L. | Verfahren zum Aufreinigen von metallurgischem Silicium |
DE102008025260B4 (de) * | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung |
DE102008025261B4 (de) | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung |
KR101687420B1 (ko) | 2008-05-27 | 2016-12-20 | 나가유나 퍼틸라이저스 앤 케미칼스 리미티드 | 할로겐화물을 함유한 실리콘, 그의 제조방법 및 용도 |
DE102008036143A1 (de) | 2008-08-01 | 2010-02-04 | Berlinsolar Gmbh | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
WO2010031390A1 (fr) | 2008-09-17 | 2010-03-25 | Rev Renewable Energy Ventures, Inc. | Procédé de production d'oligomères halogénés et/ou de polymères halogénés d'éléments du 3ème au 5ème groupe principal |
JP5206334B2 (ja) * | 2008-11-07 | 2013-06-12 | 東亞合成株式会社 | クロロポリシランの製造方法 |
DE102008054537A1 (de) * | 2008-12-11 | 2010-06-17 | Evonik Degussa Gmbh | Entfernung von Fremdmetallen aus Siliciumverbindungen durch Adsorption und/oder Filtration |
DE102009056437B4 (de) | 2009-12-02 | 2013-06-27 | Spawnt Private S.À.R.L. | Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen |
DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
-
2009
- 2009-12-04 DE DE102009056731A patent/DE102009056731A1/de not_active Withdrawn
-
2010
- 2010-12-06 CN CN201080055163.XA patent/CN102639609B/zh not_active Expired - Fee Related
- 2010-12-06 CN CN201080054817.7A patent/CN102666381B/zh not_active Expired - Fee Related
- 2010-12-06 EP EP10787448A patent/EP2507169A1/fr not_active Withdrawn
- 2010-12-06 BR BR112012014106A patent/BR112012014106A2/pt not_active IP Right Cessation
- 2010-12-06 WO PCT/EP2010/068993 patent/WO2011067416A1/fr active Application Filing
- 2010-12-06 WO PCT/EP2010/068974 patent/WO2011067410A1/fr active Application Filing
- 2010-12-06 TW TW099142326A patent/TW201139283A/zh unknown
- 2010-12-06 TW TW099142328A patent/TWI580710B/zh not_active IP Right Cessation
- 2010-12-06 TW TW099142320A patent/TW201132587A/zh unknown
- 2010-12-06 WO PCT/EP2010/068995 patent/WO2011067418A1/fr active Application Filing
- 2010-12-06 CA CA2782247A patent/CA2782247A1/fr not_active Abandoned
- 2010-12-06 EP EP10792879.8A patent/EP2507172B1/fr not_active Not-in-force
- 2010-12-06 EP EP10787123A patent/EP2507317A1/fr not_active Withdrawn
- 2010-12-06 JP JP2012541533A patent/JP6297778B2/ja not_active Expired - Fee Related
- 2010-12-06 US US13/512,760 patent/US20130043429A1/en not_active Abandoned
- 2010-12-06 US US13/513,611 patent/US9458294B2/en not_active Expired - Fee Related
- 2010-12-06 JP JP2012541537A patent/JP5731531B2/ja not_active Expired - Fee Related
- 2010-12-06 WO PCT/EP2010/068994 patent/WO2011067417A1/fr active Application Filing
- 2010-12-06 EP EP10787451A patent/EP2507299A2/fr not_active Withdrawn
- 2010-12-06 TW TW099142321A patent/TW201132708A/zh unknown
- 2010-12-06 CN CN2010800551644A patent/CN102639644A/zh active Pending
- 2010-12-06 US US13/513,036 patent/US20130004666A1/en not_active Abandoned
- 2010-12-06 JP JP2012541535A patent/JP2013512842A/ja active Pending
- 2010-12-06 TW TW099142324A patent/TW201134764A/zh unknown
- 2010-12-06 US US13/512,999 patent/US9139702B2/en not_active Expired - Fee Related
- 2010-12-06 WO PCT/EP2010/068979 patent/WO2011067411A1/fr active Application Filing
- 2010-12-06 JP JP2012541539A patent/JP2013512845A/ja active Pending
- 2010-12-06 US US13/513,217 patent/US20120315392A1/en not_active Abandoned
- 2010-12-06 WO PCT/EP2010/068986 patent/WO2011067413A2/fr active Application Filing
- 2010-12-06 JP JP2012541538A patent/JP2013512844A/ja not_active Ceased
- 2010-12-06 EP EP10787124.6A patent/EP2507296B1/fr not_active Revoked
- 2010-12-06 US US13/513,384 patent/US20120321540A1/en not_active Abandoned
- 2010-12-06 US US13/513,018 patent/US9040009B2/en not_active Expired - Fee Related
- 2010-12-06 TW TW099142322A patent/TWI589527B/zh not_active IP Right Cessation
- 2010-12-06 BR BR112012013500A patent/BR112012013500A2/pt not_active IP Right Cessation
- 2010-12-06 CA CA2782226A patent/CA2782226A1/fr not_active Abandoned
- 2010-12-06 EP EP10793199.0A patent/EP2507174B1/fr not_active Revoked
- 2010-12-06 TW TW099142323A patent/TWI561559B/zh not_active IP Right Cessation
- 2010-12-06 WO PCT/EP2010/068991 patent/WO2011067415A1/fr active Application Filing
- 2010-12-06 EP EP10788316A patent/EP2507171A1/fr not_active Withdrawn
-
2016
- 2016-04-28 JP JP2016090381A patent/JP2016179935A/ja active Pending
Non-Patent Citations (1)
Title |
---|
See references of WO2011067413A2 * |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2011067413A2 (fr) | Oligogermanes chlorés et procédé de production associé | |
DE102008025261B4 (de) | Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung | |
EP2296804B1 (fr) | Polysilane halogéné et son procédé thermique de production | |
EP2507173B1 (fr) | Procede de la preparation du hexachloruredsilane | |
EP2588411A1 (fr) | Polysilanes à longueur de chaîne moyenne et procédé pour leur préparation | |
WO2015135698A1 (fr) | Procédé de fabrication de trisylamine pure | |
WO2016079164A1 (fr) | Procédé de production de méthyldichlorophosphane | |
WO2020099242A1 (fr) | Tétrakis(trichlorosilyl)germane, son procédé de fabrication et son utilisation | |
EP0632050B1 (fr) | Procédé de préparation de 6H-dibenz-(c,e)(1,2)-oxaphosphorin-6-one | |
DE1420422A1 (de) | Verfahren zur Herstellung von loeslichen Chlorierungsprodukten des Polypropylens und dessen AEthylencopolymerisaten | |
EP0743282B1 (fr) | Procédé de préparation de fullérènes polyfluorés et leurs utilisations | |
DE102014007685A1 (de) | Verfahren zur Herstellung von Hexachlordisilan | |
DE3629381C2 (fr) | ||
EP4011830A1 (fr) | Synthèse de phosgène par mise en réaction d'un mélange gazeux contenant du chlore et du monoxyde de carbone pour obtenir un catalyseur organique contenant l'anion de chlore | |
DE10311724B4 (de) | Verfahren zur Herstellung von Hydrogenmethylpolysiloxanen mit Trimethylsilyl-Endgruppen | |
EP4011829A1 (fr) | Procédé de production de phosgène par mise en réaction des anions polychlore et du monoxyde de carbone | |
DE10338731B4 (de) | Verfahren zur Herstellung einer (RO)(R'O)(R''O)M=O-Verbindung, dünnschichtbildendes Material, Dünnschicht und Halbleiterelement | |
DE841151C (de) | Verfahren zur elektrochemischen Herstellung von Fluoramin-verbindungen | |
DE2738303B2 (de) | Verfahren zur Herstellung von Chlor enthaltenden Siloxanen und derartige Verbindungen | |
DE2109472C3 (de) | 2,4,6-Trinitrophenolester | |
DE2350803B2 (de) | Perfluorcyclohexylaether und verfahren zu ihrer herstellung | |
DE102013111124A1 (de) | Verfahren zur Herstellung von chlorierten Oligosilanen | |
EP4107199A1 (fr) | Procédé de carbodiimidation | |
WO2016095953A1 (fr) | Procédé de production d'oligosilanes chlorés | |
EP3428123A1 (fr) | Procédé de réduction de halogénures métalliques |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20120703 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20160701 |