DE69636088D1 - Halbleitervorrichtung aus einer Nitridverbindung - Google Patents

Halbleitervorrichtung aus einer Nitridverbindung

Info

Publication number
DE69636088D1
DE69636088D1 DE69636088T DE69636088T DE69636088D1 DE 69636088 D1 DE69636088 D1 DE 69636088D1 DE 69636088 T DE69636088 T DE 69636088T DE 69636088 T DE69636088 T DE 69636088T DE 69636088 D1 DE69636088 D1 DE 69636088D1
Authority
DE
Germany
Prior art keywords
semiconductor device
compound semiconductor
nitride compound
nitride
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69636088T
Other languages
English (en)
Other versions
DE69636088T2 (de
Inventor
Shuji Nakamura
Shinichi Nagahama
Naruhito Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30527995A external-priority patent/JP3235440B2/ja
Priority claimed from JP30528195A external-priority patent/JP2900990B2/ja
Priority claimed from JP33205695A external-priority patent/JP2891348B2/ja
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of DE69636088D1 publication Critical patent/DE69636088D1/de
Application granted granted Critical
Publication of DE69636088T2 publication Critical patent/DE69636088T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3206—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures ordering or disordering the natural superlattice in ternary or quaternary materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69636088T 1995-11-06 1996-11-06 Halbleitervorrichtung aus einer Nitridverbindung Expired - Lifetime DE69636088T2 (de)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
JP28718995 1995-11-06
JP28718995 1995-11-06
JP30528095 1995-11-24
JP30528195 1995-11-24
JP30527995 1995-11-24
JP30527995A JP3235440B2 (ja) 1995-11-24 1995-11-24 窒化物半導体レーザ素子とその製造方法
JP30528095 1995-11-24
JP30528195A JP2900990B2 (ja) 1995-11-24 1995-11-24 窒化物半導体発光素子
JP31785095 1995-12-06
JP31785095 1995-12-06
JP33205695A JP2891348B2 (ja) 1995-11-24 1995-12-20 窒化物半導体レーザ素子
JP33205695 1995-12-20
JP18633996 1996-07-16
JP18633996 1996-07-16
JP22814796 1996-08-29
JP22814796 1996-08-29

Publications (2)

Publication Number Publication Date
DE69636088D1 true DE69636088D1 (de) 2006-06-08
DE69636088T2 DE69636088T2 (de) 2006-11-23

Family

ID=27573376

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69636088T Expired - Lifetime DE69636088T2 (de) 1995-11-06 1996-11-06 Halbleitervorrichtung aus einer Nitridverbindung

Country Status (5)

Country Link
US (5) US5959307A (de)
EP (2) EP0772249B1 (de)
KR (1) KR100267839B1 (de)
CN (3) CN1264262C (de)
DE (1) DE69636088T2 (de)

Families Citing this family (204)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6900465B2 (en) * 1994-12-02 2005-05-31 Nichia Corporation Nitride semiconductor light-emitting device
EP0772249B1 (de) * 1995-11-06 2006-05-03 Nichia Corporation Halbleitervorrichtung aus einer Nitridverbindung
JP3448450B2 (ja) 1996-04-26 2003-09-22 三洋電機株式会社 発光素子およびその製造方法
JP3304787B2 (ja) 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子及びその製造方法
SG63757A1 (en) * 1997-03-12 1999-03-30 Hewlett Packard Co Adding impurities to improve the efficiency of allngan quantum well led's
JP4119501B2 (ja) * 1997-07-10 2008-07-16 ローム株式会社 半導体発光素子
JP3822318B2 (ja) * 1997-07-17 2006-09-20 株式会社東芝 半導体発光素子及びその製造方法
US7365369B2 (en) * 1997-07-25 2008-04-29 Nichia Corporation Nitride semiconductor device
US6476420B2 (en) 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
US6559467B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6849862B2 (en) * 1997-11-18 2005-02-01 Technologies And Devices International, Inc. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
US20020047135A1 (en) * 1997-11-18 2002-04-25 Nikolaev Audrey E. P-N junction-based structures utilizing HVPE grown III-V compound layers
US6479839B2 (en) 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
US6541797B1 (en) * 1997-12-04 2003-04-01 Showa Denko K. K. Group-III nitride semiconductor light-emitting device
DE69839300T2 (de) * 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Licht-emittierende Vorrichtung
US6593589B1 (en) * 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
KR100753147B1 (ko) * 1998-03-12 2007-08-30 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP4138930B2 (ja) * 1998-03-17 2008-08-27 富士通株式会社 量子半導体装置および量子半導体発光装置
US6249534B1 (en) 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
JPH11297631A (ja) 1998-04-14 1999-10-29 Matsushita Electron Corp 窒化物系化合物半導体の成長方法
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP2000156544A (ja) 1998-09-17 2000-06-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
WO2000021143A1 (de) * 1998-10-05 2000-04-13 Osram Opto Semiconductors Gmbh & Co. Ohg Strahlungsemittierender halbleiterchip
US6690700B2 (en) 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
JP2000124552A (ja) * 1998-10-16 2000-04-28 Agilent Technol Inc 窒化物半導体レーザ素子
US6366018B1 (en) 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6404125B1 (en) 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
AU1626400A (en) * 1998-11-16 2000-06-05 Emcore Corporation Iii-nitride quantum well structures with indium-rich clusters and methods of making the same
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP4037554B2 (ja) * 1999-03-12 2008-01-23 株式会社東芝 窒化物半導体発光素子およびその製造方法
US6838705B1 (en) * 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
JP2000286448A (ja) 1999-03-31 2000-10-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6389051B1 (en) * 1999-04-09 2002-05-14 Xerox Corporation Structure and method for asymmetric waveguide nitride laser diode
US6303404B1 (en) * 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation
JP4750238B2 (ja) * 1999-06-04 2011-08-17 ソニー株式会社 半導体発光素子
ES2149137B1 (es) * 1999-06-09 2001-11-16 Univ Madrid Politecnica Celula solar fotovoltaica de semiconductor de banda intermedia.
US6829273B2 (en) 1999-07-16 2004-12-07 Agilent Technologies, Inc. Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
JP2001053339A (ja) * 1999-08-11 2001-02-23 Toshiba Corp 半導体発光素子およびその製造方法
JP3511372B2 (ja) * 1999-08-31 2004-03-29 シャープ株式会社 半導体発光素子およびそれを使用した表示装置
JP2001119102A (ja) * 1999-10-15 2001-04-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体レーザダイオード
TW459371B (en) 1999-12-02 2001-10-11 United Epitaxy Co Ltd Quantum well device with anti-electrostatic discharge and the manufacturing method thereof
US6515313B1 (en) 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US6514782B1 (en) 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
US6903376B2 (en) 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
US6486499B1 (en) 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6504171B1 (en) 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
JP3686569B2 (ja) * 2000-03-02 2005-08-24 シャープ株式会社 半導体発光装置及びそれを用いた表示装置
JP3636976B2 (ja) * 2000-03-17 2005-04-06 日本電気株式会社 窒化物半導体素子およびその製造方法
JP2001298028A (ja) * 2000-04-17 2001-10-26 Tokyo Electron Ltd 半導体デバイス製造方法
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
JP3624794B2 (ja) 2000-05-24 2005-03-02 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
JP2002084000A (ja) * 2000-07-03 2002-03-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
KR100344103B1 (ko) * 2000-09-04 2002-07-24 에피밸리 주식회사 질화갈륨계 결정 보호막을 형성한 반도체 소자 및 그 제조방법
CA2444273C (en) * 2001-04-12 2012-05-22 Nichia Corporation Gallium nitride semiconductor device
JP3912043B2 (ja) 2001-04-25 2007-05-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US7132676B2 (en) * 2001-05-15 2006-11-07 Kabushiki Kaisha Toshiba Photon source and a method of operating a photon source
GB2376563A (en) * 2001-06-13 2002-12-18 Sharp Kk A method of growing a magnesium-doped nitride semiconductor material
TW550839B (en) * 2001-07-25 2003-09-01 Shinetsu Handotai Kk Light emitting element and method for manufacturing thereof
DE10142653A1 (de) * 2001-08-31 2003-04-30 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
TWI262606B (en) * 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
US6645885B2 (en) * 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
ATE387736T1 (de) * 2001-11-05 2008-03-15 Nichia Corp Halbleiterelement
AU2001297613A1 (en) * 2001-11-08 2003-06-10 Midwest Research Institute Reactive codoping of gaalinp compound semiconductors
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
JP2003289176A (ja) * 2002-01-24 2003-10-10 Sony Corp 半導体発光素子およびその製造方法
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
JPWO2003077391A1 (ja) * 2002-03-08 2005-07-07 松下電器産業株式会社 半導体レーザ及びその製造方法
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
TW200400608A (en) 2002-06-17 2004-01-01 Kopin Corp Bonding pad for gallium nitride-based light-emitting device
US7002180B2 (en) * 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
KR100568701B1 (ko) * 2002-06-19 2006-04-07 니폰덴신뎅와 가부시키가이샤 반도체 발광 소자
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US6955985B2 (en) 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
GB2392170A (en) * 2002-08-23 2004-02-25 Sharp Kk MBE growth of a semiconductor layer structure
KR100542720B1 (ko) * 2003-06-03 2006-01-11 삼성전기주식회사 GaN계 접합 구조
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
DE10329079B4 (de) * 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
TWI233697B (en) * 2003-08-28 2005-06-01 Genesis Photonics Inc AlInGaN light-emitting diode with wide spectrum and solid-state white light device
EP1670106A4 (de) 2003-09-25 2007-12-12 Matsushita Electric Ind Co Ltd Nitridhalbleiterbauelement und verfahren zu seiner herstellung
US7345297B2 (en) * 2004-02-09 2008-03-18 Nichia Corporation Nitride semiconductor device
US20050179042A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices
US20050179046A1 (en) * 2004-02-13 2005-08-18 Kopin Corporation P-type electrodes in gallium nitride-based light-emitting devices
CN100481540C (zh) 2004-02-24 2009-04-22 昭和电工株式会社 基于氮化镓的化合物半导体多层结构及其制造方法
JP2005294753A (ja) * 2004-04-05 2005-10-20 Toshiba Corp 半導体発光素子
JP3863177B2 (ja) * 2004-04-16 2006-12-27 ナイトライド・セミコンダクター株式会社 窒化ガリウム系発光装置
US7154163B2 (en) * 2004-05-05 2006-12-26 Supernova Optoelectronics Corp. Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
KR100558455B1 (ko) * 2004-06-25 2006-03-10 삼성전기주식회사 질화물 반도체 소자
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
KR100670531B1 (ko) * 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7829912B2 (en) 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
KR100649496B1 (ko) * 2004-09-14 2006-11-24 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
FI20041213A0 (fi) * 2004-09-17 2004-09-17 Optogan Oy Puolijohdeheterorakenne
CN100356596C (zh) * 2004-10-10 2007-12-19 晶元光电股份有限公司 高亮度氮化铟镓铝发光二极管及其制造方法
WO2006057485A1 (en) * 2004-11-29 2006-06-01 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device
CN100379042C (zh) * 2005-02-18 2008-04-02 乐清市亿昊科技发展有限公司 发光二极管管芯的基底结构体及制造基底结构体的方法
CN100380695C (zh) * 2005-03-03 2008-04-09 乐清市亿昊科技发展有限公司 发光二极管管芯及其制造方法
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US20090159869A1 (en) * 2005-03-11 2009-06-25 Ponce Fernando A Solid State Light Emitting Device
KR100631980B1 (ko) * 2005-04-06 2006-10-11 삼성전기주식회사 질화물 반도체 소자
KR100748247B1 (ko) * 2005-07-06 2007-08-09 삼성전기주식회사 질화물계 반도체 발광다이오드 및 그 제조방법
DE102005048196B4 (de) * 2005-07-29 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
US20070045638A1 (en) 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region
JP2007066981A (ja) * 2005-08-29 2007-03-15 Toshiba Corp 半導体装置
KR100691283B1 (ko) * 2005-09-23 2007-03-12 삼성전기주식회사 질화물 반도체 소자
JP5113330B2 (ja) * 2005-11-30 2013-01-09 ローム株式会社 窒化ガリウム半導体発光素子
JP2007294878A (ja) * 2006-03-31 2007-11-08 Fujifilm Corp 半導体層とその成膜方法、半導体発光素子、及び半導体発光装置
DE102006025964A1 (de) * 2006-06-02 2007-12-06 Osram Opto Semiconductors Gmbh Mehrfachquantentopfstruktur, strahlungsemittierender Halbleiterkörper und strahlungsemittierendes Bauelement
RU2306634C1 (ru) * 2006-08-08 2007-09-20 Закрытое Акционерное Общество "Светлана - Оптоэлектроника" Полупроводниковая светоизлучающая гетероструктура
KR20080023980A (ko) * 2006-09-12 2008-03-17 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
US8283699B2 (en) * 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
US7612362B2 (en) * 2006-11-22 2009-11-03 Sharp Kabushiki Kaisha Nitride semiconductor light emitting device
KR100868530B1 (ko) 2006-12-04 2008-11-13 한국전자통신연구원 질화물 반도체 발광 소자
JP2008226906A (ja) * 2007-03-08 2008-09-25 Sharp Corp 窒化物半導体発光素子
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US8039740B2 (en) * 2007-06-20 2011-10-18 Rosestreet Labs Energy, Inc. Single P-N junction tandem photovoltaic device
JP4341702B2 (ja) 2007-06-21 2009-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
CN101330118B (zh) * 2007-06-22 2010-06-09 晶能光电（江西）有限公司 用于制造p型半导体结构的方法
KR101393953B1 (ko) * 2007-06-25 2014-05-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
KR101316423B1 (ko) 2007-08-09 2013-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100887050B1 (ko) * 2007-12-06 2009-03-04 삼성전기주식회사 질화물 반도체 소자
JP4720834B2 (ja) * 2008-02-25 2011-07-13 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ
JP5279006B2 (ja) * 2008-03-26 2013-09-04 パナソニック株式会社 窒化物半導体発光素子
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
US8664747B2 (en) * 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
KR20090117538A (ko) * 2008-05-09 2009-11-12 삼성전기주식회사 질화물 반도체 발광소자
JP4572963B2 (ja) * 2008-07-09 2010-11-04 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子、及びエピタキシャルウエハ
WO2010101335A1 (en) 2009-03-06 2010-09-10 Chung Hoon Lee Light emitting device
US8207547B2 (en) 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
WO2011025149A2 (ko) * 2009-08-26 2011-03-03 서울옵토디바이스주식회사 반도체 기판 제조 방법 및 발광 소자 제조 방법
TWI405409B (zh) * 2009-08-27 2013-08-11 Novatek Microelectronics Corp 低電壓差動訊號輸出級
JP5916980B2 (ja) * 2009-09-11 2016-05-11 シャープ株式会社 窒化物半導体発光ダイオード素子の製造方法
US8525221B2 (en) * 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
WO2011084478A1 (en) * 2009-12-15 2011-07-14 Lehigh University Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
US8907321B2 (en) * 2009-12-16 2014-12-09 Lehigh Univeristy Nitride based quantum well light-emitting devices having improved current injection efficiency
KR101754900B1 (ko) * 2010-04-09 2017-07-06 엘지이노텍 주식회사 발광 소자
TW201532302A (zh) * 2010-06-24 2015-08-16 Hitachi Chemical Co Ltd 形成不純物擴散層的組成物、形成ｎ型擴散層的組成物、ｎ型擴散層的製造方法、形成ｐ型擴散層的組成物、ｐ型擴散層的製造方法及太陽能電池的製造方法
EP2408028B1 (de) * 2010-07-16 2015-04-08 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung
JP5852660B2 (ja) 2010-10-12 2016-02-03 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー 高効率なオプトエレクトロニクスのための大きなバンドギャップをもつｉｉｉ−ｖ族化合物
US20120180868A1 (en) * 2010-10-21 2012-07-19 The Regents Of The University Of California Iii-nitride flip-chip solar cells
US20120103419A1 (en) * 2010-10-27 2012-05-03 The Regents Of The University Of California Group-iii nitride solar cells grown on high quality group-iii nitride crystals mounted on foreign material
JP2012104528A (ja) * 2010-11-08 2012-05-31 Sharp Corp 窒化物半導体発光素子
RU2456711C1 (ru) * 2010-11-11 2012-07-20 Общество с ограниченной ответственностью "Галлий-Н" Полупроводниковый светоизлучающий элемент
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
CN102738340B (zh) * 2011-04-01 2015-07-22 山东华光光电子有限公司 一种采用AlInN量子垒提高GaN基LED内量子效率的LED结构及制备方法
KR101781435B1 (ko) 2011-04-13 2017-09-25 삼성전자주식회사 질화물 반도체 발광소자
CN102201505A (zh) * 2011-05-03 2011-09-28 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
CN102157646A (zh) * 2011-05-03 2011-08-17 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US8648384B2 (en) * 2011-07-25 2014-02-11 Lg Innotek Co., Ltd. Light emitting device
US20130026480A1 (en) 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US20130032810A1 (en) 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8669585B1 (en) 2011-09-03 2014-03-11 Toshiba Techno Center Inc. LED that has bounding silicon-doped regions on either side of a strain release layer
US8558247B2 (en) 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED
US8552465B2 (en) 2011-11-09 2013-10-08 Toshiba Techno Center Inc. Method for reducing stress in epitaxial growth
US9362719B2 (en) 2012-03-30 2016-06-07 The Regents Of The University Of Michigan GaN-based quantum dot visible laser
TW201401558A (zh) * 2012-06-28 2014-01-01 Lextar Electronics Corp 發光二極體結構及其製作方法
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
TW201513397A (zh) * 2013-09-26 2015-04-01 Lextar Electronics Corp 發光二極體之製造方法
US9337369B2 (en) 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
JP6306200B2 (ja) 2014-09-22 2018-04-04 シャープ株式会社 窒化物半導体発光素子
DE102014117611A1 (de) * 2014-12-01 2016-06-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US9793252B2 (en) 2015-03-30 2017-10-17 Emagin Corporation Method of integrating inorganic light emitting diode with oxide thin film transistor for display applications
KR102347387B1 (ko) * 2015-03-31 2022-01-06 서울바이오시스 주식회사 자외선 발광 소자
CN105957936B (zh) * 2016-06-24 2018-04-13 太原理工大学 一种duv led外延片结构
DE102016111929A1 (de) * 2016-06-29 2018-01-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Leuchtdiode
EP3712925A4 (de) * 2017-11-16 2020-11-25 Panasonic Corporation Gruppe-iii-nitrid-halbleiter
CN109599466A (zh) * 2018-12-03 2019-04-09 广东工业大学 一种双波长led外延结构及其制作方法
CN110676283B (zh) * 2019-10-16 2022-03-25 福州大学 一种基于纳米线的μLED显示设计方法

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115385A (ja) 1984-07-02 1986-01-23 Nec Corp 半導体レ−ザ
JPH0680859B2 (ja) 1984-12-27 1994-10-12 ソニー株式会社 半導体レーザー
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
GB9024332D0 (en) 1990-11-08 1990-12-19 British Telecomm Method of training a neural network
US5412226A (en) 1989-11-20 1995-05-02 British Telecommunications Public Limited Company Semi-conductor structures
JPH03290984A (ja) * 1990-04-06 1991-12-20 Matsushita Electron Corp 半導体レーザ
JP2564024B2 (ja) * 1990-07-09 1996-12-18 シャープ株式会社 化合物半導体発光素子
JPH04218994A (ja) * 1990-08-31 1992-08-10 Toshiba Corp 半導体発光装置
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
GB9123638D0 (en) * 1991-11-07 1992-01-02 Magill Alan R Apparel & fabric & devices suitable for health monitoring applications
US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser
US5308327A (en) * 1991-11-25 1994-05-03 Advanced Surgical Inc. Self-deployed inflatable retractor
US5309921A (en) * 1992-02-11 1994-05-10 Spectrum Medical Technologies Apparatus and method for respiratory monitoring
US5800360A (en) * 1992-02-11 1998-09-01 Spectrum Medical Technologies, Inc. Apparatus and method for respiratory monitoring
DE69331979T2 (de) * 1992-02-28 2003-01-23 Hitachi Ltd Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger
US5818072A (en) 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
JP3243768B2 (ja) * 1992-07-06 2002-01-07 日本電信電話株式会社 半導体発光素子
JP2917742B2 (ja) 1992-07-07 1999-07-12 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子とその製造方法
US5294883A (en) * 1992-08-04 1994-03-15 International Business Machines Corporation Test detector/shutoff and method for BiCMOS integrated circuit
EP0607435B1 (de) * 1992-08-07 1999-11-03 Asahi Kasei Kogyo Kabushiki Kaisha Halbleiteranordnung auf nitridbasis und verfahren zu ihrer herstellung
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JPH06164055A (ja) 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd 量子井戸型半導体レーザ
JPH06164085A (ja) 1992-11-27 1994-06-10 Nitto Denko Corp 複合フレキシブル基板
JP2827794B2 (ja) 1993-02-05 1998-11-25 日亜化学工業株式会社 ｐ型窒化ガリウムの成長方法
JPH0773140B2 (ja) 1993-02-09 1995-08-02 日本電気株式会社 半導体レーザ
JP2932467B2 (ja) 1993-03-12 1999-08-09 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2778405B2 (ja) 1993-03-12 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH0774431A (ja) 1993-06-23 1995-03-17 Furukawa Electric Co Ltd:The 半導体光素子
US5479932A (en) * 1993-08-16 1996-01-02 Higgins; Joseph Infant health monitoring system
US5383211A (en) * 1993-11-02 1995-01-17 Xerox Corporation TM-polarized laser emitter using III-V alloy with nitrogen
JPH07235729A (ja) 1994-02-21 1995-09-05 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体レーザ素子
JPH07235723A (ja) 1994-02-23 1995-09-05 Hitachi Ltd 半導体レーザ素子
JP3325380B2 (ja) 1994-03-09 2002-09-17 株式会社東芝 半導体発光素子およびその製造方法
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
DE69534387T2 (de) * 1994-03-22 2006-06-14 Toyoda Gosei Kk Lichtemittierende Halbleitervorrichtung, die eine Stickstoff enthaltende Verbindung der Gruppe III verwendet
US6005258A (en) 1994-03-22 1999-12-21 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
US5646953A (en) * 1994-04-06 1997-07-08 Matsushita Electronics Corporation Semiconductor laser device
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
JPH07297447A (ja) 1994-04-20 1995-11-10 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
JP2956489B2 (ja) 1994-06-24 1999-10-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
EP0772247B1 (de) * 1994-07-21 2004-09-15 Matsushita Electric Industrial Co., Ltd. Lichtemittierende halbleitervorrichtung und herstellungsverfahren
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
JP3561536B2 (ja) 1994-08-23 2004-09-02 三洋電機株式会社 半導体発光素子
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
US5693963A (en) * 1994-09-19 1997-12-02 Kabushiki Kaisha Toshiba Compound semiconductor device with nitride
JPH08116128A (ja) 1994-10-17 1996-05-07 Fujitsu Ltd 半導体量子井戸光素子
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
JPH08290218A (ja) 1995-04-19 1996-11-05 Hirata Corp 曲げ加工装置及び曲げ加工方法
JP3728332B2 (ja) 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JPH08316581A (ja) 1995-05-18 1996-11-29 Sanyo Electric Co Ltd 半導体装置および半導体発光素子
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
JP2839077B2 (ja) 1995-06-15 1998-12-16 日本電気株式会社 窒化ガリウム系化合物半導体発光素子
JPH0964419A (ja) 1995-08-28 1997-03-07 Sumitomo Chem Co Ltd ３−５族化合物半導体及び発光素子
JP2919788B2 (ja) 1995-08-31 1999-07-19 株式会社東芝 半導体装置、半導体装置の製造方法、及び窒化ガリウム系半導体の成長方法
US6258617B1 (en) 1995-08-31 2001-07-10 Kabushiki Kaisha Toshiba Method of manufacturing blue light emitting element
US6121638A (en) * 1995-09-12 2000-09-19 Kabushiki Kaisha Toshiba Multi-layer structured nitride-based semiconductor devices
US5789876A (en) * 1995-09-14 1998-08-04 The Regents Of The Univeristy Of Michigan Method and apparatus for generating and accelerating ultrashort electron pulses
JPH09116225A (ja) 1995-10-20 1997-05-02 Hitachi Ltd 半導体発光素子
JP3727091B2 (ja) 1995-10-31 2005-12-14 豊田合成株式会社 ３族窒化物半導体素子
JP3235440B2 (ja) 1995-11-24 2001-12-04 日亜化学工業株式会社 窒化物半導体レーザ素子とその製造方法
EP0772249B1 (de) * 1995-11-06 2006-05-03 Nichia Corporation Halbleitervorrichtung aus einer Nitridverbindung
JP2900990B2 (ja) 1995-11-24 1999-06-02 日亜化学工業株式会社 窒化物半導体発光素子
JP2877063B2 (ja) 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
US6009180A (en) 1996-09-17 1999-12-28 The Boeing Company Fluidic element noise and vibration control constructs and methods
AU7377698A (en) * 1997-05-13 1998-12-08 Ser-Tek Systems, Inc. Conveyor with integrated self-actuating clamp
JP4242985B2 (ja) 1999-10-26 2009-03-25 帝人株式会社 イソフタレート系ポリエステルの製造方法

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EP0772249B1 (de) 2006-05-03
EP0772249A2 (de) 1997-05-07
KR100267839B1 (ko) 2000-10-16
CN1525578A (zh) 2004-09-01
US20040101012A1 (en) 2004-05-27
CN1160801C (zh) 2004-08-04
US8304790B2 (en) 2012-11-06
EP0772249A3 (de) 1998-11-04
US7166869B2 (en) 2007-01-23
CN1525612A (zh) 2004-09-01
US20040183063A1 (en) 2004-09-23
US20030015724A1 (en) 2003-01-23
CN1156909A (zh) 1997-08-13
CN100350641C (zh) 2007-11-21
US7166874B2 (en) 2007-01-23
KR970026601A (ko) 1997-06-24
US20070272915A1 (en) 2007-11-29
DE69636088T2 (de) 2006-11-23
CN1264262C (zh) 2006-07-12
EP1653524A1 (de) 2006-05-03

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