DE60034841D1 - Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung - Google Patents

Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung

Info

Publication number
DE60034841D1
DE60034841D1 DE60034841T DE60034841T DE60034841D1 DE 60034841 D1 DE60034841 D1 DE 60034841D1 DE 60034841 T DE60034841 T DE 60034841T DE 60034841 T DE60034841 T DE 60034841T DE 60034841 D1 DE60034841 D1 DE 60034841D1
Authority
DE
Germany
Prior art keywords
iii
emitting device
semiconductor light
device consisting
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60034841T
Other languages
English (en)
Other versions
DE60034841T2 (de
Inventor
Naoki Kaneyama
Makoto Asai
Katsuhisa Sawazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Application granted granted Critical
Publication of DE60034841D1 publication Critical patent/DE60034841D1/de
Publication of DE60034841T2 publication Critical patent/DE60034841T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE60034841T 1999-03-31 2000-03-09 Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung Expired - Lifetime DE60034841T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9071899 1999-03-31
JP9071899A JP3567790B2 (ja) 1999-03-31 1999-03-31 Ｉｉｉ族窒化物系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
DE60034841D1 true DE60034841D1 (de) 2007-06-28
DE60034841T2 DE60034841T2 (de) 2008-02-07

Family

ID=14006337

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60034841T Expired - Lifetime DE60034841T2 (de) 1999-03-31 2000-03-09 Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung

Country Status (4)

Country Link
US (2) US6452214B2 (de)
EP (1) EP1041650B1 (de)
JP (1) JP3567790B2 (de)
DE (1) DE60034841T2 (de)

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JP3567790B2 (ja) * 1999-03-31 2004-09-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
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ATE448589T1 (de) * 2001-04-12 2009-11-15 Nichia Corp Halbleiterelement aus galliumnitridzusammensetzung
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP3812366B2 (ja) * 2001-06-04 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
EP1453160B1 (de) 2001-11-05 2008-02-27 Nichia Corporation Halbleiterelement
JP2003163373A (ja) * 2001-11-26 2003-06-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR100497890B1 (ko) * 2002-08-19 2005-06-29 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP4143732B2 (ja) 2002-10-16 2008-09-03 スタンレー電気株式会社 車載用波長変換素子
JP4292925B2 (ja) * 2003-09-16 2009-07-08 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP3979378B2 (ja) * 2003-11-06 2007-09-19 住友電気工業株式会社 半導体発光素子
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
JP2005244207A (ja) * 2004-01-30 2005-09-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP4896024B2 (ja) * 2004-08-25 2012-03-14 オムノバ ソリューソンズ インコーポレーティッド 凝集中空粒子ラテックスを使用した紙の製造
US7291865B2 (en) * 2004-09-29 2007-11-06 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device
JP5138873B2 (ja) 2005-05-19 2013-02-06 日亜化学工業株式会社 窒化物半導体素子
US7731693B2 (en) * 2005-10-27 2010-06-08 Cook Incorporated Coupling wire guide
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KR20070102114A (ko) * 2006-04-14 2007-10-18 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
EP2070123A2 (de) 2006-10-02 2009-06-17 Illumitex, Inc. Led-system und -verfahren
JP4191227B2 (ja) * 2007-02-21 2008-12-03 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ
JP4962130B2 (ja) * 2007-04-04 2012-06-27 三菱化学株式会社 ＧａＮ系半導体発光ダイオードの製造方法
KR20100122485A (ko) 2008-02-08 2010-11-22 일루미텍스, 인크. 발광체층 쉐이핑을 위한 시스템 및 방법
TWI475717B (zh) * 2008-05-09 2015-03-01 Advanced Optoelectronic Tech A semiconductor element that emits radiation
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
WO2010100689A1 (ja) * 2009-03-03 2010-09-10 パナソニック株式会社 窒化ガリウム系化合物半導体の製造方法、および半導体発光素子
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
KR101747349B1 (ko) * 2011-12-07 2017-06-28 삼성전자주식회사 반도체 발광소자
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI536606B (zh) * 2013-12-25 2016-06-01 新世紀光電股份有限公司 發光二極體結構
CN104779328B (zh) * 2014-01-13 2018-02-02 新世纪光电股份有限公司 发光二极管结构
JP6701628B2 (ja) * 2015-05-29 2020-05-27 日亜化学工業株式会社 半導体装置及びその製造方法
JP6434878B2 (ja) * 2015-09-10 2018-12-05 株式会社東芝 発光装置
TWI738640B (zh) * 2016-03-08 2021-09-11 新世紀光電股份有限公司 半導體結構
TWI717386B (zh) 2016-09-19 2021-02-01 新世紀光電股份有限公司 含氮半導體元件
KR102603411B1 (ko) 2017-12-18 2023-11-16 엘지디스플레이 주식회사 마이크로led 표시장치

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JPH1168158A (ja) * 1997-08-20 1999-03-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
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Also Published As

Publication number Publication date
JP2000286447A (ja) 2000-10-13
US6762070B2 (en) 2004-07-13
DE60034841T2 (de) 2008-02-07
JP3567790B2 (ja) 2004-09-22
US6452214B2 (en) 2002-09-17
EP1041650B1 (de) 2007-05-16
EP1041650A2 (de) 2000-10-04
US20020175332A1 (en) 2002-11-28
EP1041650A3 (de) 2001-10-10
US20020014632A1 (en) 2002-02-07

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