TWI475717B - A semiconductor element that emits radiation - Google Patents
A semiconductor element that emits radiation Download PDFInfo
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- TWI475717B TWI475717B TW097117098A TW97117098A TWI475717B TW I475717 B TWI475717 B TW I475717B TW 097117098 A TW097117098 A TW 097117098A TW 97117098 A TW97117098 A TW 97117098A TW I475717 B TWI475717 B TW I475717B
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- radiation
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- conductive layer
- semiconductor component
- ohmic contact
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 230000005855 radiation Effects 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 8
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 123
- 239000000463 material Substances 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910001257 Nb alloy Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- NDNKRACDDKGFIP-UHFFFAOYSA-N gold niobium Chemical compound [Nb].[Nb].[Nb].[Au] NDNKRACDDKGFIP-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 defects Substances 0.000 description 1
- MWRJCEDXZKNABM-UHFFFAOYSA-N germanium tungsten Chemical compound [Ge].[W] MWRJCEDXZKNABM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本發明係有關於一種發出輻射之半導體元件,特別是有關於一種可降低操作電壓之發出輻射的半導體元件。
發光二極體為一利用半導體材料所製作而成的元件,係為一種可將電能轉換為光能之微細固態光源。由於發光二極體其具有體積小、壽命長、驅動電壓低、發熱量低、耗電量小、反應速度快、無汞污染等環保問題以及單性光發光之特性及優點,且能夠配合各種應用設備其輕、薄、以及小型化之需求,因此,已成為日常生活中普及的電子產品。
近年來,許多的焦點集中在以三族氮化物為主的半導體所形成的發光元件,例如氮化鎵(GaN)、氮化鋁(AlN)、氮化鋁鎵(AlGaN)、氮化銦鎵(InGaN)、氮化鋁銦鎵(AlInGaN)等。
在以三族氮化物為主的半導體元件中,通常以p型GaN材料為p型導電層。p型傳導層之材質為p型摻雜之三族氮化物材料,而因p型氮化物半導體材料的摻雜濃度無法像n型材料那麼高,使得p型電極不易與p型半導體形成良好的歐姆接觸,因此往往需要在p型傳導層上額外形成金屬氧化透明傳導電極層,以面電極的方式降低接觸電阻。
金屬氧化透明傳導材料,如銦錫氧化物(ITO)與氧化鎳(NiO)等,已被廣泛用於光電元件中,例如薄膜電晶體(TFT-LCD)、有機發光二極體元件(OLED)與發光二極體等,且特別是以三族氮化物為主的發光二極體元件中,金屬氧化透明傳導材料的使用更是多見。此金屬氧化透明傳導材料在光電元件中所扮演的角色係為一電子傳導層與一光傳輸層。對於光電元件而言,主要的技術改進仍在於尋找如何讓元件具有更低且更穩定的順向操作電壓,因此,上述以透明電極層做為面電極以降低接觸電阻的方式仍然不夠。然而,要在ITO與p型GaN膜層間形成一歐姆傳導之接觸層並非容易之事。
一般常見之用以降低接觸電阻的傳統技術大多以高摻雜之p型接觸層做為解決方法,然而,此高摻雜之p型接觸層可能因摻雜材料的能隙大小而造成吸光的情形,且因摻雜濃度太高而造成載子的擴散,導致操作電壓的不穩定情形。
有鑑於此,仍有必要開發新的發光二極體結構,以達到降低操作電壓的目的,並改善光取出的效率,提升發光二極體的亮度,以符合市場需求。
本發明提供一種非p型歐姆(ohmic)接觸層,用以降低發出輻射之半導體元件其操作電壓。
本發明所提供之非p型歐姆(ohmic)接觸層,其材料不包含鎂金屬,因此更能降低膜層對光的吸收。
本發明所提供之Al x Ga y In(1-x-y)N非p型歐姆(ohmic)接觸層係為單一磊晶成長層,除了能得到穩定的傳導特性,更能避免多表面所誘發生成的光反射現象。
本發明提供一種發出輻射之半導體元件,包含:一用以產生輻射之活性層(active layer)、一p型傳導層、一透明傳導層(transparent conductive layer,TCL),與一非p型歐姆(ohmic)接觸層。其中,p型傳導層形成於活性層上,透明傳導層形成於p型傳導層上,而非p型歐姆接觸層介於p型傳導層與透明傳導層之間。
100‧‧‧發出輻射之半導體元件
110‧‧‧基板
120‧‧‧n型傳導層
130‧‧‧活化層
140‧‧‧p型傳導層
150‧‧‧n型接觸層
160‧‧‧透明傳導氧化層
170‧‧‧p型電極層
180‧‧‧n型電極層
第一圖係為根據本發明所建構之半導體元件剖面結構示意圖;第二圖係為本發明所提供之發出輻射的半導體元件(此處以發光二極體為例)與傳統發光二極體之電流-電壓特性圖,圖中圓形點狀曲線與方塊點狀曲線分別為傳統發光二極體與本發明所提供之發光二極體元件。
本發明在此所探討的方向為一種發出輻射之半導體元件。為了能徹底地瞭解本發明,將在下列的描述中提出詳盡的步驟及其組成。顯然地,本發明的施行並未限定於發出輻射的半導體元件之技藝者所熟習的特殊細節。另一方面,眾所周知的組成或步驟並未描述於細節中,以避免造成本發明不必要之限制。本發明的較佳實施例會詳細描述如下,然而除了這
些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,且本發明的範圍不受限定,其以之後的專利範圍為準。
在以GaN、AlGaN、InGaN為主的半導體元件中,通常以p型GaN材料為p型導電層。然而由於p型導電層與透明導電層或金屬等p型電極層的接觸界面間會產生較高的接觸電阻,接觸電阻上所消耗的電功率會轉換成熱損耗,且會影響此元件於功能上的操作。在以GaN為主的半導體元件中,接觸電阻所消耗的功率佔總電功率之50%或更多。此外,所產生的熱損耗會使此元件的溫度升高,然而太高的溫度則會使此元件受損,因此,須盡可能使接觸電阻降低。且在以GaN為主之半導體元件中,與n型傳導層連接之膜層間的接觸電阻相較與p型傳導層連接之膜層間的接觸電阻小很多,然而總消耗功率以半導體元件之各個接觸電阻間的串聯總值為主,因此則特別需要降低與p型傳導層連接之膜層間的接觸電阻,以使總接觸電阻下降。以下所列舉的四件先前技術各提出其所主張的方法,以解決上述問題。
如美國專利US7105850,提出成長一p型接觸層於p型披覆層上(p型披覆層位於主動發光層上),並以鎂和鋁共摻雜之氮化銦鎵(In1-yGayN)作為p型接觸層之材料,以此方式降低發光二極體的操作電壓。。然而此發明所提供之p型接觸層的材料中,由於鎂金屬其能隙的緣故,會造成光取出效率的降低。
美國專利US7005681,提出以鎂或鋅高摻雜之氮化銦鎵為p型
接觸層之材料,以降低接觸電阻。此發明所提供之以氮化銦鎵為p型接觸層的半導體元件,若要得到0.08Amp的電流,則其操作電壓需6伏特才能達到,雖較傳統以p-GaN-接觸層之半導體元件所得測量值還小,但6伏特的操作電壓仍嫌過高。此外,與上述美國專利US7105850相同的是,此專利亦使用摻雜鎂金屬的材料為p型接觸層,因此仍會受到鎂本身能隙的影響,降低光子取出效率。
美國專利US7132695,提出以p型材料與n型材料共同摻雜之雙摻雜接觸層來降低接觸電阻,其所提出之p型摻雜材料為鎂(Mg)、鋅(Zn)、鈹(Be)、鈣(Ca),n型摻雜材料為矽(Si)、鍺(Ge)、錫(Sn)、碲(Te)、氧(O)、碳(C)等。然而此種雙摻雜之膜層其傳導特性不易控制,且亦無法確保傳導率的穩定性。
美國專利US6995403,提出以寬能帶與窄能帶之氮化物半導體材料重複堆疊而成的膜層,為透明傳導層與p型傳導層間的接觸層,以此降低接觸電阻。然而,由菲涅耳損失(Fresnel loss)效應得知,光線傳遞至兩介質的邊界時,會因為在邊界處產生的多重反射而造成光子能量的損失。因此,越多界面則使得光線的反射情形更加嚴重,並阻礙光子從發光二極體元件中射出的機會。
綜觀上述先前專利之缺失:以鎂為摻雜物的接觸層其吸光情形,以及p型與n型材料混合摻雜之接觸層其所造成傳導特性不易控制且傳導率不穩定的情形,以及多界面之膜層造成光
線多重反射而使光子能量損失的情形等問題,因此,本發明提供一可用以降低接觸電阻並避免上述問題產生的解決方法。
本發明主要利用磊晶方式成長一個將與透明傳導層(transparent conductive layer,TCL)接觸之非p型歐姆接觸層(non-p-type doping ohmic contact layer),以降低LED的操作電壓(operating voltage),並減少p型傳導層與透明傳導層之間因電阻而產生之熱量,進而減少此熱量對量子井造成焦爾熱效應(Joule heating effect)情形,使得LED在整體發光效率及電光轉換效率(wall plug efficiency)等其他效率,可以有較佳的表現。而電光轉換效率主要與元件本身的特性如元件材料的能帶、缺陷、雜質及元件的磊晶組成及結構等相關。同時,在其成分不包含鎂的情形下,本發明所提供之非p型歐姆接觸層更能降低膜層對光的吸收。此外,本發明所提供之非p型歐姆接觸層適用於各種透明傳導層[如銦錫氧化物(ITO)、銦鋅氧化物(IZO)、氧化鋅(ZnO)、氧化鎳(NiO)、鎘錫氧化物(CTO)或上述族群之組合,以及ZnO:Al、ZnGa2O4、SnO2:Sb、Ga2O3:Sn、AgInO2:Sn、In2O3:Zn、CuAlO2、LaCuOS、CuGaO2與SrCu2O2等]製程。
請參考第一圖所示,係為本發明所提供的一種發出輻射之半導體元件100的剖面圖,從基板110開始由下而上依序包含:一n型傳導層120、一用以產生輻射之活性層(active
layer)130、一p型傳導層140、一非p型歐姆(ohmic)接觸層150、一透明傳導層(transparent conductive layer,TCL)160與一p型電極層170,以及一另外與n型傳導層120接觸之n型電極層180。其中,n型傳導層120位於基板110表面,活性層130位於n型傳導層120上,p型傳導層140形成於活性層130上,透明傳導層160形成於p型傳導層140上,非p型歐姆(ohmic)接觸層150則介於p型傳導層140與透明傳導層160之間。
上述發出輻射之半導體元件100係為發光二極體或為雷射二極體,且前述之基板110係為C-Plane、R-Plane、A-Plane之單晶三氧化二鋁(藍寶石,sapphire),或碳化矽(6H-SiC或4H-SiC),亦可為Si、ZnO、GaAs、尖晶石(MgAl 204),或是晶格常數接近於三族氮化物半導體之單晶氧化物等材料。另外,n型傳導層120、活性層130、p型傳導層140等係為三族氮化物等材料,p型電極層170之材料係為鎳(Ni)、鈀(Pd)、鉑(Pt)、鉻(Cr)、金(Au)、鈦(Ti)、銀(Ag)、鋁(Al)、鍺(Ge)、鎢(W)、矽化鎢(SiW)、鉭(Ta)、金鋅合金(AuZn)、金鈹合金(AuBe)、金鍺合金(AuGe)、以及金鍺鎳合金(AuGeNi)所組成之一族群。
而於本發明中所提供之非p型歐姆接觸層150係為AlxGayIn(1-x-y)N四元合金,此AlxGayIn(1-x-y)N係為單一磊晶成長層,且此非p型歐姆接觸層150係用以降低發出輻射之半導體元件100其操作電壓。其中,x值與y值的範圍係為0≦
x≦1,0≦y≦1,厚度範圍值係為10Å~1000Å。本發明所提供之AlxGayIn(1-x-y)N非p型歐姆接觸層150除了能得到穩定的傳導特性,且單層磊晶成長能避免多表面所誘發生成的光反射現象。此外,本發明所提供之AlxGayIn(1-x-y)N四元合金中的鋁成分能調變此四元合金材料的能隙,並使得非p型歐姆接觸層之能隙大於活性層,以此降低非p型歐姆接觸層的吸光效應。
請參考第二圖所示,係為本發明所提供之發出輻射的半導體元件(此處以發光二極體為例)與傳統發光二極體之電流-電壓特性圖,圖中圓形點狀曲線與方塊點狀曲線分別為傳統發光二極體與本發明所提供之發光二極體元件。由圖中的圓形點狀曲線與方塊點狀曲線可清楚看出,若要得到相同的電流值,例如0.08Amp,則本發明所提供之發光二極體元件(方塊點狀曲線)只需3.6伏特即可達成,而傳統發光二極體(圓形點狀曲線)卻要4.0伏特才能達成。因此本發明所提供之發出輻射的半導體元件確實能達成降低操作電壓的效果。
本發明提供一種可降低發出輻射之半導體元件其操作電壓的方法,包含:提供一基板,並於基板上依序形成一n型傳導層、一用以產生輻射之活性層(active layer)、一p型傳導層;再於p型傳導層上依序形成一非p型歐姆(ohmic)接觸層與一透明傳導層(transparent conductive layer,TCL),最後在透明傳導層與n型傳導層上分別形成一p型電極層與一n型電極層。其中非p型歐姆(ohmic)接觸層係用以降低半
導體元件之操作電壓。
本發明中所提供之發出輻射的半導體元件係為發光二極體或雷射二極體。而上述所提及之非p型歐姆接觸層係為AlxGayIn(1-x-y)N四元合金,此AlxGayIn(1-x-y)N係為單一磊晶成長層。其中,x值與y值的範圍係為0≦x≦1,0≦y≦1,且非p型歐姆接觸層之厚度範圍值係為10Å~1000Å。
另外,本方法所提及之基板係為C-Plane、R-Plane、A-Plane之三氧化二鋁單晶(藍寶石,sapphire),或碳化矽(6H-SiC或4H-SiC),亦可為Si、ZnO、GaAs、尖晶石(MgAl2O4),或是晶格常數接近於氮化物半導體之單晶氧化物等材料,n型傳導層、活性層、p型傳導層等係為三族氮化物等材料。
顯然地,依照上面實施例中的描述,本發明可能有許多的修正與差異。因此需要在其附加的權利要求項之範圍內加以理解,除了上述詳細的描述外,本發明還可以廣泛地在其他的實施例中施行。上述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離本發明所揭示之精神下所完成的等效改變或修飾,均應包含在下述申請專利範圍內。
100‧‧‧發出輻射之半導體元件
110‧‧‧基板
120‧‧‧n型傳導層
130‧‧‧活化層
140‧‧‧p型傳導層
150‧‧‧n型接觸層
160‧‧‧透明傳導氧化層
170‧‧‧p型電極層
180‧‧‧n型電極層
Claims (16)
- 一種發出輻射之半導體元件,包含:一用以產生輻射之活性層(active layer);一p型傳導層,該p型傳導層形成於該活性層上;一透明傳導層(transparent conductive layer,TCL),該透明傳導層形成於該p型傳導層上;與一非故意摻雜歐姆(ohmic)接觸層形成於該p型傳導層與該透明傳導層之間,該非故意摻雜歐姆接觸層與p型傳導層直接接觸。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該半導體元件係為發光二極體。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該半導體元件係為雷射二極體。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該非故意摻雜歐姆接觸層係為AlxGayIn(1-x-y)N四元合金,x值與y值的範圍係為0≦x≦1,0≦y≦1,且上述該AlxGayIn(1-x-y)N四元合金中的能隙大於活化層的能隙,以此特性降低該非故意摻雜歐姆接觸層的吸光效應。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該非故意摻雜歐姆接觸層之厚度範圍值係為10Å~1000Å。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該非故意摻雜歐姆接觸層係用以降低該發出輻射之半導體元件其操作電壓。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該非故意摻雜歐姆接觸層係為單一磊晶成長層。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該半導體元件更包含一基板與一n型傳導層,該n型傳導層位於該基板與該活性層之間。
- 如申請專利範圍第8項所述之發出輻射之半導體元件,該基板係為藍寶石(Al2O3)或為碳化矽(SiC)。
- 如申請專利範圍第1項所述之發出輻射之半導體元件,該透明傳導層係為下列族群之一者或其組合:銦錫氧化物(ITO)、銦鋅氧化物(IZO)、氧化鋅(ZnO)、氧化鎳(NiO)、鎘錫氧化物(CTO)、ZnO:Al、ZnGa2O4、SnO2:Sb、Ga2O3:Sn、AgInO2:Sn、In2O3:Zn、CuAlO2、LaCuOS、CuGaO2與SrCu2O2等。
- 一種降低發出輻射之半導體元件其操作電壓的方法,包含:提供一基板;於該基板上依序形成一n型傳導層、一用以產生輻射之活性層(active layer)、一p型傳導層;於該p型傳導層上依序形成一非故意摻雜歐姆(ohmic)接觸層以及一透明傳導層(transparent conductive layer,TCL),該非故意摻雜歐姆接觸層與p型傳導層直接接觸,其中該非故意摻雜歐姆(ohmic)接觸層係用以降低該半導體元件之操作電壓。
- 如申請專利範圍第11項所述之降低發出輻射之半導體元件其操作電壓的方法,該半導體元件係為發光二極體或雷射二極體。
- 如申請專利範圍第11項所述之降低發出輻射之半導體元件其操作電壓的方法,該非故意摻雜歐姆接觸層係為AlxGayIn(1-x-y)N四元合金,x值與y值的範圍係為0≦x≦1,0≦y≦1,且上述該AlxGayIn(1-x-y)N四元合金的能隙大於活化層的能隙,以此特性降低該非故意摻雜歐姆接觸層的吸光效應。
- 如申請專利範圍第11項所述之降低發出輻射之半導體元件其操作電壓的方法,該非故意摻雜歐姆接觸層之厚度範圍值係為10Å~1000Å。
- 如申請專利範圍第11項所述之降低發出輻射之半導體元件其操作電壓的方法,該非故意摻雜歐姆接觸層係為單一磊晶成長層。
- 如申請專利範圍第11項所述之降低發出輻射之半導體元件其操作電壓的方法,該透明傳導層係為下列族群之一者或其組合:銦錫氧化物(ITO)、銦鋅氧化物(IZO)、氧化鋅(ZnO)、氧化鎳(NiO)、鎘錫氧化物(CTO)、ZnO:Al、ZnGa2O4、SnO2:Sb、Ga2O3:Sn、AgInO2:Sn、In2O3:Zn、CuAlO2、LaCuOS、CuGaO2與SrCu2O2等。
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