AU2001294309A1 - Semiconductor light-emitting diode - Google Patents

Semiconductor light-emitting diode

Info

Publication number
AU2001294309A1
AU2001294309A1 AU2001294309A AU9430901A AU2001294309A1 AU 2001294309 A1 AU2001294309 A1 AU 2001294309A1 AU 2001294309 A AU2001294309 A AU 2001294309A AU 9430901 A AU9430901 A AU 9430901A AU 2001294309 A1 AU2001294309 A1 AU 2001294309A1
Authority
AU
Australia
Prior art keywords
emitting diode
semiconductor light
semiconductor
light
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001294309A
Inventor
Chang Tae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EpiValley Co Ltd
Original Assignee
EpiValley Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EpiValley Co Ltd filed Critical EpiValley Co Ltd
Publication of AU2001294309A1 publication Critical patent/AU2001294309A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
AU2001294309A 2000-10-05 2001-10-05 Semiconductor light-emitting diode Abandoned AU2001294309A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020000058637A KR20010000545A (en) 2000-10-05 2000-10-05 The multiple wavelength AlGaInN LED device with pumping layer
KR0058637 2000-10-05
PCT/KR2001/001671 WO2002029907A1 (en) 2000-10-05 2001-10-05 Semiconductor light-emitting diode

Publications (1)

Publication Number Publication Date
AU2001294309A1 true AU2001294309A1 (en) 2002-04-15

Family

ID=19692068

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001294309A Abandoned AU2001294309A1 (en) 2000-10-05 2001-10-05 Semiconductor light-emitting diode

Country Status (4)

Country Link
US (1) US6828599B2 (en)
KR (1) KR20010000545A (en)
AU (1) AU2001294309A1 (en)
WO (1) WO2002029907A1 (en)

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US8829546B2 (en) * 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
KR100422944B1 (en) * 2001-05-31 2004-03-12 삼성전기주식회사 Semiconductor LED device
KR100433989B1 (en) * 2001-09-11 2004-06-04 삼성전기주식회사 Semiconductor LED device and manufacturing metheod thereof
US7569863B2 (en) * 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
US7323721B2 (en) * 2004-09-09 2008-01-29 Blue Photonics Inc. Monolithic multi-color, multi-quantum well semiconductor LED
CN101385145B (en) 2006-01-05 2011-06-08 伊鲁米特克斯公司 Separate optical device for directing light from an LED
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
JP2011512037A (en) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド System and method for emitter layer shaping
CN102017203B (en) 2008-05-02 2013-04-10 Lg伊诺特有限公司 Light-emitting element and a production method therefor
KR101459770B1 (en) * 2008-05-02 2014-11-12 엘지이노텍 주식회사 group 3 nitride-based semiconductor devices
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
TW201129850A (en) * 2009-08-31 2011-09-01 3M Innovative Properties Co Projection and display system
EP2362207A1 (en) 2010-01-28 2011-08-31 F. Hoffmann-La Roche AG Measuring system and method, in particular for determining blood sugar
US8421433B2 (en) 2010-03-31 2013-04-16 Maxim Integrated Products, Inc. Low noise bandgap references
CN102738341B (en) * 2011-04-01 2014-12-10 山东华光光电子有限公司 LED structure using AlGaInN quaternary material as quantum well and quantum barrier and manufacturing method thereof
WO2020005827A1 (en) * 2018-06-26 2020-01-02 Lumileds Llc Led utilizing internal color conversion with light extraction enhancements
US10868213B2 (en) * 2018-06-26 2020-12-15 Lumileds Llc LED utilizing internal color conversion with light extraction enhancements
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
KR102478355B1 (en) 2022-09-16 2022-12-19 넥스트원 주식회사 Battery for electric vehicle using flexible planar heating element

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5696359A (en) * 1995-11-13 1997-12-09 Lucent Technologies Inc. Portable loudspeaker/directional microphone peripheral
US5977566A (en) * 1996-06-05 1999-11-02 Kabushiki Kaisha Toshiba Compound semiconductor light emitter
JPH10173219A (en) * 1996-12-06 1998-06-26 Rohm Co Ltd Semiconductor light-emitting element
JP4104686B2 (en) * 1996-12-06 2008-06-18 ローム株式会社 Semiconductor light emitting device
US6100586A (en) * 1997-05-23 2000-08-08 Agilent Technologies, Inc. Low voltage-drop electrical contact for gallium (aluminum, indium) nitride
JPH11135838A (en) * 1997-10-20 1999-05-21 Ind Technol Res Inst White-color light-emitting diode and manufacture thereof
JPH11121806A (en) * 1997-10-21 1999-04-30 Sharp Corp Semiconductor light emitting device
WO1999046822A1 (en) * 1998-03-12 1999-09-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3978858B2 (en) * 1998-04-03 2007-09-19 松下電器産業株式会社 Gallium nitride compound semiconductor light emitting device
KR100298205B1 (en) * 1998-05-21 2001-08-07 오길록 Integrated tri-color light emitting diode and method for fabricating the same
JP3522114B2 (en) * 1998-07-21 2004-04-26 株式会社村田製作所 Semiconductor light emitting device, method of manufacturing the same, and method of forming ZnO film
JP3397141B2 (en) * 1998-07-28 2003-04-14 住友電気工業株式会社 White LED
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
KR20010068552A (en) * 2000-01-06 2001-07-23 구자홍 nitride light emitting device
KR100357118B1 (en) * 2000-05-04 2002-10-19 엘지전자 주식회사 Nitride Light Emitting Device
US20020084745A1 (en) * 2000-12-29 2002-07-04 Airma Optoelectronics Corporation Light emitting diode with light conversion by dielectric phosphor powder
US6541800B2 (en) * 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED

Also Published As

Publication number Publication date
KR20010000545A (en) 2001-01-05
US20040041161A1 (en) 2004-03-04
US6828599B2 (en) 2004-12-07
WO2002029907A1 (en) 2002-04-11

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