AU2001278013A1 - Improved gan light emitting diode - Google Patents

Improved gan light emitting diode

Info

Publication number
AU2001278013A1
AU2001278013A1 AU2001278013A AU7801301A AU2001278013A1 AU 2001278013 A1 AU2001278013 A1 AU 2001278013A1 AU 2001278013 A AU2001278013 A AU 2001278013A AU 7801301 A AU7801301 A AU 7801301A AU 2001278013 A1 AU2001278013 A1 AU 2001278013A1
Authority
AU
Australia
Prior art keywords
light emitting
emitting diode
gan light
improved gan
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001278013A
Inventor
John Chen
Bingwen Liang
Robert Shih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AXT Inc
Original Assignee
American Xtal Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Xtal Technology Inc filed Critical American Xtal Technology Inc
Publication of AU2001278013A1 publication Critical patent/AU2001278013A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
AU2001278013A 2000-07-26 2001-07-25 Improved gan light emitting diode Abandoned AU2001278013A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/626,443 US6897494B1 (en) 2000-07-26 2000-07-26 GaN light emitting diode with conductive outer layer
US09626443 2000-07-26
PCT/US2001/023452 WO2002009475A2 (en) 2000-07-26 2001-07-25 IMPROVED GaN LIGHT EMITTING DIODE

Publications (1)

Publication Number Publication Date
AU2001278013A1 true AU2001278013A1 (en) 2002-02-05

Family

ID=24510390

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001278013A Abandoned AU2001278013A1 (en) 2000-07-26 2001-07-25 Improved gan light emitting diode

Country Status (6)

Country Link
US (1) US6897494B1 (en)
EP (1) EP1320900B1 (en)
AU (1) AU2001278013A1 (en)
CA (1) CA2414725C (en)
ES (1) ES2549261T3 (en)
WO (1) WO2002009475A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110077707A (en) * 2009-12-30 2011-07-07 엘지디스플레이 주식회사 Vertical light emitting diode and manufacturing method of the same
US8723160B2 (en) 2010-07-28 2014-05-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having peripheral electrode frame and method of fabrication
US8283652B2 (en) 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2725265A1 (en) * 1976-06-04 1977-12-08 Tokyo Shibaura Electric Co SEMI-CONDUCTOR LIGHT DISPLAY DEVICE
DE2755433C2 (en) * 1977-12-13 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Radiation-emitting semiconductor diode
US4864370A (en) * 1987-11-16 1989-09-05 Motorola, Inc. Electrical contact for an LED
JPH0478174A (en) * 1990-07-19 1992-03-12 Nec Corp Semiconductor light emitting element
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
EP0622858B2 (en) * 1993-04-28 2004-09-29 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device and method of producing the same
JPH07254732A (en) * 1994-03-15 1995-10-03 Toshiba Corp Semiconductor light emitting device
DE19517697A1 (en) * 1995-05-13 1996-11-14 Telefunken Microelectron Orange to green light emitting semiconductor LED
US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
US5977566A (en) * 1996-06-05 1999-11-02 Kabushiki Kaisha Toshiba Compound semiconductor light emitter
JP3807020B2 (en) 1997-05-08 2006-08-09 昭和電工株式会社 Translucent electrode for light emitting semiconductor device and method for producing the same
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
DE19820777C2 (en) * 1997-05-08 2003-06-18 Showa Denko Kk Electrode for semiconductor light emitting devices
JPH11274566A (en) * 1998-03-26 1999-10-08 Canon Inc Light emitting element and manufacture thereof
US6091197A (en) * 1998-06-12 2000-07-18 Xerox Corporation Full color tunable resonant cavity organic light emitting diode
JP2000091637A (en) * 1998-09-07 2000-03-31 Rohm Co Ltd Manufacture of semiconductor light emitting element
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
JP2000208874A (en) * 1999-01-12 2000-07-28 Sony Corp Nitride semiconductor, its manufacture, nitride semiconductor light-emitting device, and its manufacture
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same

Also Published As

Publication number Publication date
EP1320900A2 (en) 2003-06-25
EP1320900A4 (en) 2007-02-28
CA2414725A1 (en) 2002-01-31
US6897494B1 (en) 2005-05-24
ES2549261T3 (en) 2015-10-26
WO2002009475A3 (en) 2002-06-27
EP1320900B1 (en) 2015-07-22
CA2414725C (en) 2012-01-03
WO2002009475A2 (en) 2002-01-31

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