AU2001277153A1 - Improved transparent substrate light emitting diode - Google Patents

Improved transparent substrate light emitting diode

Info

Publication number
AU2001277153A1
AU2001277153A1 AU2001277153A AU7715301A AU2001277153A1 AU 2001277153 A1 AU2001277153 A1 AU 2001277153A1 AU 2001277153 A AU2001277153 A AU 2001277153A AU 7715301 A AU7715301 A AU 7715301A AU 2001277153 A1 AU2001277153 A1 AU 2001277153A1
Authority
AU
Australia
Prior art keywords
light emitting
emitting diode
transparent substrate
substrate light
improved transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001277153A
Inventor
John Chen
Bingwen Liang
Robert Shih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AXT Inc
Original Assignee
American Xtal Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Xtal Technology Inc filed Critical American Xtal Technology Inc
Publication of AU2001277153A1 publication Critical patent/AU2001277153A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
AU2001277153A 2000-07-26 2001-07-25 Improved transparent substrate light emitting diode Abandoned AU2001277153A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/626,444 US6643304B1 (en) 2000-07-26 2000-07-26 Transparent substrate light emitting diode
US09626444 2000-07-26
PCT/US2001/023347 WO2002009243A1 (en) 2000-07-26 2001-07-25 Improved transparent substrate light emitting diode

Publications (1)

Publication Number Publication Date
AU2001277153A1 true AU2001277153A1 (en) 2002-02-05

Family

ID=24510393

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001277153A Abandoned AU2001277153A1 (en) 2000-07-26 2001-07-25 Improved transparent substrate light emitting diode

Country Status (5)

Country Link
US (1) US6643304B1 (en)
EP (1) EP1323215A4 (en)
AU (1) AU2001277153A1 (en)
CA (1) CA2412423C (en)
WO (1) WO2002009243A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6869812B1 (en) 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
TWI236160B (en) * 2003-11-25 2005-07-11 Super Nova Optoelectronics Cor GaN light emitted diode with high luminescent efficiency and the manufacture method
KR100576856B1 (en) * 2003-12-23 2006-05-10 삼성전기주식회사 Nitride semiconductor light emitting diode and method of manufactruing the same
US20050152417A1 (en) * 2004-01-08 2005-07-14 Chung-Hsiang Lin Light emitting device with an omnidirectional photonic crystal
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
CN100379043C (en) * 2005-04-30 2008-04-02 中国科学院半导体研究所 Full angle reflector structure GaN base light emitting diode and producing method
US20070004066A1 (en) * 2005-07-01 2007-01-04 Dong-Sing Wuu Method for manufacturing a light emitting device and a light emitting device manufactured therefrom
JP4650631B2 (en) * 2005-11-30 2011-03-16 ソニー株式会社 Semiconductor light emitting device
US7573074B2 (en) * 2006-05-19 2009-08-11 Bridgelux, Inc. LED electrode
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
US8212262B2 (en) * 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
DE102007029391A1 (en) * 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
KR101047792B1 (en) * 2010-04-23 2011-07-07 엘지이노텍 주식회사 Light emitting device, method of fabricating the light emitting device and light emitting device package
KR20120126856A (en) 2011-05-13 2012-11-21 삼성전자주식회사 Semiconductor light emitting diode chip and light emitting device having the same
WO2013139251A1 (en) * 2012-03-21 2013-09-26 厦门市三安光电科技有限公司 Light-emitting diode with reflector and manufacturing method therefor
US9528667B1 (en) 2015-09-03 2016-12-27 Osram Sylvania Inc. Thermoforming a substrate bearing LEDs into a curved bulb enclosure

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US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
JPS5928394A (en) * 1982-08-10 1984-02-15 Nec Corp Light emitting element
US5089860A (en) * 1990-06-25 1992-02-18 Deppe Dennis G Quantum well device with control of spontaneous photon emission, and method of manufacturing same
JP2666228B2 (en) * 1991-10-30 1997-10-22 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
JP3717196B2 (en) * 1994-07-19 2005-11-16 豊田合成株式会社 Light emitting element
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
GB2295269A (en) * 1994-11-14 1996-05-22 Sharp Kk Resonant cavity laser having oxide spacer region
US5614734A (en) * 1995-03-15 1997-03-25 Yale University High efficency LED structure
DE19629920B4 (en) 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Light-emitting diode with a non-absorbing distributed Bragg reflector
US5798536A (en) * 1996-01-25 1998-08-25 Rohm Co., Ltd. Light-emitting semiconductor device and method for manufacturing the same
US5719894A (en) 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having nitrogen disposed therein
US6040590A (en) * 1996-12-12 2000-03-21 California Institute Of Technology Semiconductor device with electrostatic control
JP3946337B2 (en) * 1997-02-21 2007-07-18 株式会社東芝 Gallium nitride compound semiconductor laser
JP3439063B2 (en) * 1997-03-24 2003-08-25 三洋電機株式会社 Semiconductor light emitting device and light emitting lamp
JPH11220170A (en) * 1998-01-29 1999-08-10 Rohm Co Ltd Light emitting diode element
DE19819543A1 (en) * 1998-04-30 1999-11-11 Siemens Ag Light emission semiconductor device
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks

Also Published As

Publication number Publication date
US6643304B1 (en) 2003-11-04
CA2412423C (en) 2012-03-20
EP1323215A4 (en) 2006-11-15
WO2002009243A1 (en) 2002-01-31
EP1323215A1 (en) 2003-07-02
CA2412423A1 (en) 2002-01-31

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