AU2002220107A1 - Group iii nitride light emitting devices with gallium-free layers - Google Patents

Group iii nitride light emitting devices with gallium-free layers

Info

Publication number
AU2002220107A1
AU2002220107A1 AU2002220107A AU2010702A AU2002220107A1 AU 2002220107 A1 AU2002220107 A1 AU 2002220107A1 AU 2002220107 A AU2002220107 A AU 2002220107A AU 2010702 A AU2010702 A AU 2010702A AU 2002220107 A1 AU2002220107 A1 AU 2002220107A1
Authority
AU
Australia
Prior art keywords
gallium
light emitting
group iii
emitting devices
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002220107A
Inventor
Michael John Bergmann
Kathleen Marie Doverspike
John Adam Edmond
Hua-Shuang Kong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2002220107A1 publication Critical patent/AU2002220107A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AU2002220107A 2000-11-03 2001-11-02 Group iii nitride light emitting devices with gallium-free layers Abandoned AU2002220107A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/706,057 2000-11-03
US09706057 2000-11-03
US09/706,057 US6534797B1 (en) 2000-11-03 2000-11-03 Group III nitride light emitting devices with gallium-free layers
PCT/US2001/045636 WO2002037579A2 (en) 2000-11-03 2001-11-02 Group iii nitride light emitting devices with gallium-free layers

Publications (1)

Publication Number Publication Date
AU2002220107A1 true AU2002220107A1 (en) 2002-05-15

Family

ID=24836054

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002220107A Abandoned AU2002220107A1 (en) 2000-11-03 2001-11-02 Group iii nitride light emitting devices with gallium-free layers

Country Status (10)

Country Link
US (3) US6534797B1 (en)
EP (1) EP1344260A2 (en)
JP (1) JP2004513520A (en)
KR (1) KR20030045072A (en)
CN (1) CN100355093C (en)
AU (1) AU2002220107A1 (en)
CA (1) CA2426718A1 (en)
MY (1) MY119108A (en)
TW (1) TW550833B (en)
WO (1) WO2002037579A2 (en)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800876B2 (en) 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6794684B2 (en) * 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
GB2372632A (en) * 2001-02-23 2002-08-28 Sharp Kk A method of growing an InGaN semiconductor layer
JP4001262B2 (en) * 2001-02-27 2007-10-31 日本碍子株式会社 Method for manufacturing nitride film
US6784074B2 (en) 2001-05-09 2004-08-31 Nsc-Nanosemiconductor Gmbh Defect-free semiconductor templates for epitaxial growth and method of making same
US6653166B2 (en) * 2001-05-09 2003-11-25 Nsc-Nanosemiconductor Gmbh Semiconductor device and method of making same
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
EP2034530B1 (en) * 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
US6951819B2 (en) * 2002-12-05 2005-10-04 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US6952024B2 (en) * 2003-02-13 2005-10-04 Cree, Inc. Group III nitride LED with silicon carbide cladding layer
KR100707167B1 (en) * 2003-07-11 2007-04-13 삼성전자주식회사 Thin film electrode for ohmic contact using materials capable of making the binary and ternary p-type thermo-electronic oxide thin films for high-quality optical devices related to Al,InGaN and method
US6995403B2 (en) * 2003-09-03 2006-02-07 United Epitaxy Company, Ltd. Light emitting device
TWI236160B (en) * 2003-11-25 2005-07-11 Super Nova Optoelectronics Cor GaN light emitted diode with high luminescent efficiency and the manufacture method
US6897489B1 (en) * 2004-03-10 2005-05-24 Hui Peng (AlGa)InPN high brightness white or desired color LED's
KR100663324B1 (en) * 2004-04-29 2007-01-02 주식회사 이츠웰 light emitting diode with vertical electrode and manufacturing method of the same
US7557380B2 (en) * 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
US20070003697A1 (en) * 2004-07-28 2007-01-04 Jean-Francois Carlin Lattice-matched AllnN/GaN for optoelectronic devices
US7554123B2 (en) * 2004-08-25 2009-06-30 Sensor Electronic Technology, Inc. Ohmic contact for nitride-based semiconductor device
EP1794813B1 (en) * 2004-08-26 2015-05-20 LG Innotek Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
FI20041213A0 (en) * 2004-09-17 2004-09-17 Optogan Oy Parts Half heterostructure
KR100661708B1 (en) * 2004-10-19 2006-12-26 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method thereof
WO2006074916A1 (en) * 2005-01-13 2006-07-20 Ecole Polytechnique Federale De Lausanne Industrial Relations Office (Sri) Group iii nitride light-emitting devices having a polarization-doped region
JP2006332370A (en) * 2005-05-26 2006-12-07 Sumitomo Electric Ind Ltd Nitride semiconductor light emitting device
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
KR100750932B1 (en) 2005-07-31 2007-08-22 삼성전자주식회사 Growth of Single Nitride-based Semiconductors Using Substrate Decomposition Prevention Layer And Manufacturing of High-quality Nitride-based Light Emitting Devices
JP4913375B2 (en) * 2005-08-08 2012-04-11 昭和電工株式会社 Manufacturing method of semiconductor device
CN101385145B (en) * 2006-01-05 2011-06-08 伊鲁米特克斯公司 Separate optical device for directing light from an LED
US8087960B2 (en) * 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US20090275266A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device polishing
JP2008277356A (en) * 2007-04-25 2008-11-13 Shimei Semiconductor Co Ltd Semiconductor element
KR20100122485A (en) * 2008-02-08 2010-11-22 일루미텍스, 인크. System and method for emitter layer shaping
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2011044554A1 (en) 2009-10-09 2011-04-14 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
CN102171846A (en) * 2008-10-09 2011-08-31 加利福尼亚大学董事会 Photoelectrochemical etching for chip shaping of light emitting diodes
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
TW201034256A (en) * 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8263500B2 (en) * 2009-01-30 2012-09-11 The Regents Of The University Of California Photoelectrochemical etching for laser facets
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US8449128B2 (en) * 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
CN102630349B (en) 2009-09-18 2017-06-13 天空公司 Method power led and using current density operation
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US20120007102A1 (en) * 2010-07-08 2012-01-12 Soraa, Inc. High Voltage Device and Method for Optical Devices
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
JP2015509669A (en) 2012-03-06 2015-03-30 ソラア インコーポレーテッドSoraa Inc. Light emitting diode with low refractive index material layer to reduce guided light effect
KR101961303B1 (en) * 2012-05-30 2019-03-25 엘지이노텍 주식회사 Light emitting device package and light emitting system
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
US11054673B2 (en) * 2018-05-11 2021-07-06 Raytheon Bbn Technologies Corp. Photonic devices
US10890712B2 (en) 2018-05-11 2021-01-12 Raytheon Bbn Technologies Corp. Photonic and electric devices on a common layer

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2650744B2 (en) 1988-12-28 1997-09-03 シャープ株式会社 Light emitting diode
JP3160914B2 (en) 1990-12-26 2001-04-25 豊田合成株式会社 Gallium nitride based compound semiconductor laser diode
US5173751A (en) 1991-01-21 1992-12-22 Pioneer Electronic Corporation Semiconductor light emitting device
DE69333250T2 (en) 1992-07-23 2004-09-16 Toyoda Gosei Co., Ltd. Light emitting device made of a compound of the gallium nitride group
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5338944A (en) 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
JP3717196B2 (en) 1994-07-19 2005-11-16 豊田合成株式会社 Light emitting element
US5751752A (en) 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5661074A (en) 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5585648A (en) 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
EP0817283A1 (en) 1996-01-19 1998-01-07 Matsushita Electric Industrial Co., Ltd. Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
US5900647A (en) 1996-02-05 1999-05-04 Sharp Kabushiki Kaisha Semiconductor device with SiC and GaAlInN
US5874747A (en) 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
JP3713100B2 (en) 1996-05-23 2005-11-02 ローム株式会社 Manufacturing method of semiconductor light emitting device
US5987048A (en) 1996-07-26 1999-11-16 Kabushiki Kaisha Toshiba Gallium nitride-based compound semiconductor laser and method of manufacturing the same
JPH1084161A (en) 1996-09-06 1998-03-31 Sumitomo Electric Ind Ltd Semiconductor laser and its manufacturing method
JP2820140B2 (en) 1996-12-13 1998-11-05 日本電気株式会社 Gallium nitride based semiconductor laser
US5880491A (en) * 1997-01-31 1999-03-09 The United States Of America As Represented By The Secretary Of The Air Force SiC/111-V-nitride heterostructures on SiC/SiO2 /Si for optoelectronic devices
GB2327145A (en) 1997-07-10 1999-01-13 Sharp Kk Graded layers in an optoelectronic semiconductor device
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6078064A (en) 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
GB2343294A (en) 1998-10-31 2000-05-03 Sharp Kk Lattice-matched semiconductor devices
JP3609661B2 (en) * 1999-08-19 2005-01-12 株式会社東芝 Semiconductor light emitting device

Also Published As

Publication number Publication date
US6534797B1 (en) 2003-03-18
US20030164506A1 (en) 2003-09-04
TW550833B (en) 2003-09-01
CN100355093C (en) 2007-12-12
KR20030045072A (en) 2003-06-09
EP1344260A2 (en) 2003-09-17
CA2426718A1 (en) 2002-05-10
WO2002037579A3 (en) 2002-07-18
US6784461B2 (en) 2004-08-31
CN1473363A (en) 2004-02-04
JP2004513520A (en) 2004-04-30
WO2002037579A2 (en) 2002-05-10
US6717185B2 (en) 2004-04-06
US20030164507A1 (en) 2003-09-04
MY119108A (en) 2005-03-31

Similar Documents

Publication Publication Date Title
AU2002220107A1 (en) Group iii nitride light emitting devices with gallium-free layers
AU2001265143A1 (en) Phosphorescent organic light emitting devices
EP1215945A3 (en) Organic light emitting device
AU5646801A (en) Light-emitting devices
AU2001248868A1 (en) Light emitting lamp
AU2076901A (en) Iii-nitride light-emitting device with increased light generating capability
AU2002361905A1 (en) Organic light-emitting devices
AU6040998A (en) Stacked organic light emitting devices
AU2002222025A1 (en) Light-emitting diode illuminating optical device
AU2002213245A1 (en) Detection lamp equipped with light-emitting diode
AU2001294309A1 (en) Semiconductor light-emitting diode
AU4593100A (en) Light emitting diode with improved efficiency
AU2001267920A1 (en) Iii group nitride compound semiconductor light emitting element
EP1344255A4 (en) Improved light emitting diode
AU4598300A (en) Organic light emitting devices
AU2001277158A1 (en) Enhanced light-emitting diode
AU2001277153A1 (en) Improved transparent substrate light emitting diode
AU2002246883A1 (en) Integral organic light emitting diode printhead
AU2001270837A1 (en) Patterned organic light emitting device
AU2001270810A1 (en) Light emitting diode with lens
AU2001277609A1 (en) Light emitting diodes
AU2001272825A1 (en) Roller wheel with light emitting diodes
AU2001270823A1 (en) Light emitting diode arrangements
AU2002227978A1 (en) Broadband light-emitting polymeric diodes (pled)
AU2001278013A1 (en) Improved gan light emitting diode