DE60144263D1 - Halbleiterbauelement mit einer Schottky-Barrieren-Diodenstruktur - Google Patents

Halbleiterbauelement mit einer Schottky-Barrieren-Diodenstruktur

Info

Publication number
DE60144263D1
DE60144263D1 DE60144263T DE60144263T DE60144263D1 DE 60144263 D1 DE60144263 D1 DE 60144263D1 DE 60144263 T DE60144263 T DE 60144263T DE 60144263 T DE60144263 T DE 60144263T DE 60144263 D1 DE60144263 D1 DE 60144263D1
Authority
DE
Germany
Prior art keywords
semiconductor device
schottky barrier
diode structure
barrier diode
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144263T
Other languages
English (en)
Inventor
Kitada Mizue
Kunori Shinji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Application granted granted Critical
Publication of DE60144263D1 publication Critical patent/DE60144263D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60144263T 2000-03-31 2001-03-30 Halbleiterbauelement mit einer Schottky-Barrieren-Diodenstruktur Expired - Lifetime DE60144263D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000097554A JP3860705B2 (ja) 2000-03-31 2000-03-31 半導体装置

Publications (1)

Publication Number Publication Date
DE60144263D1 true DE60144263D1 (de) 2011-05-05

Family

ID=18612164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144263T Expired - Lifetime DE60144263D1 (de) 2000-03-31 2001-03-30 Halbleiterbauelement mit einer Schottky-Barrieren-Diodenstruktur

Country Status (4)

Country Link
US (1) US6404032B1 (de)
EP (1) EP1139433B1 (de)
JP (1) JP3860705B2 (de)
DE (1) DE60144263D1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4865166B2 (ja) * 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法
JP3914785B2 (ja) 2002-02-20 2007-05-16 新電元工業株式会社 ダイオード素子
EP1341238B1 (de) 2002-02-20 2012-09-05 Shindengen Electric Manufacturing Co., Ltd. Diodeanordnung und Transistoranordnung
US6841825B2 (en) 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP4274771B2 (ja) 2002-10-04 2009-06-10 新電元工業株式会社 半導体装置
JP3971670B2 (ja) 2002-06-28 2007-09-05 新電元工業株式会社 半導体装置
WO2004066391A1 (ja) * 2003-01-20 2004-08-05 Mitsubishi Denki Kabushiki Kaisha 半導体装置
JP4610207B2 (ja) * 2004-02-24 2011-01-12 三洋電機株式会社 半導体装置およびその製造方法
JP4773716B2 (ja) 2004-03-31 2011-09-14 株式会社デンソー 半導体基板の製造方法
FI20055057A (fi) * 2004-05-11 2005-11-12 Artto Aurola Puolijohdelaite
DE102004053761A1 (de) * 2004-11-08 2006-05-18 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
DE102004053760A1 (de) 2004-11-08 2006-05-11 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
JP2006165013A (ja) 2004-12-02 2006-06-22 Nissan Motor Co Ltd 半導体装置及びその製造方法
DE102004059640A1 (de) 2004-12-10 2006-06-22 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren zu deren Herstellung
CN101853786B (zh) * 2005-10-06 2012-06-13 胜高股份有限公司 半导体衬底的制造方法
EP1863096B1 (de) * 2006-05-30 2017-07-19 Nissan Motor Company Limited Halbleiteranordnung und Verfahren zu deren Herstellung
CN101083280B (zh) * 2006-06-01 2010-09-22 日产自动车株式会社 半导体装置和制造该半导体装置的方法
JP4599379B2 (ja) * 2007-08-31 2010-12-15 株式会社東芝 トレンチゲート型半導体装置
DE102007045185A1 (de) 2007-09-21 2009-04-02 Robert Bosch Gmbh Halbleitervorrichtung und Verfahren zu deren Herstellung
US7750412B2 (en) * 2008-08-06 2010-07-06 Fairchild Semiconductor Corporation Rectifier with PN clamp regions under trenches
TW201015718A (en) 2008-10-03 2010-04-16 Sanyo Electric Co Semiconductor device and method for manufacturing the same
JP5566020B2 (ja) * 2008-12-22 2014-08-06 新電元工業株式会社 トレンチショットキバリアダイオードの製造方法
DE102009028252A1 (de) 2009-08-05 2011-02-10 Robert Bosch Gmbh Halbleiteranordnung
JP5600411B2 (ja) * 2009-10-28 2014-10-01 三菱電機株式会社 炭化珪素半導体装置
DE102011087591A1 (de) * 2011-12-01 2013-06-06 Robert Bosch Gmbh Hochspannungs-Trench-Junction-Barrier-Schottkydiode
CN103681778B (zh) * 2012-09-09 2017-04-26 朱江 一种沟槽电荷补偿肖特基半导体装置及其制备方法
CN104124151B (zh) * 2014-07-14 2017-08-25 中航（重庆）微电子有限公司 一种沟槽结构肖特基势垒二极管及其制作方法
CN106340453A (zh) * 2015-07-07 2017-01-18 北大方正集团有限公司 二极管的制备方法及二极管
CN105023953A (zh) * 2015-07-10 2015-11-04 淄博汉林半导体有限公司 一种垂直场效应二极管及制造方法
JP6678549B2 (ja) * 2016-09-27 2020-04-08 株式会社 日立パワーデバイス 半導体装置およびその製造方法、並びに電力変換システム
CN107275221A (zh) * 2017-06-30 2017-10-20 上海华虹宏力半导体制造有限公司 超级结器件的制造方法
CN107275222A (zh) * 2017-06-30 2017-10-20 上海华虹宏力半导体制造有限公司 超级结器件的制造方法
JP7237772B2 (ja) * 2019-08-20 2023-03-13 株式会社東芝 半導体装置
CN111326567A (zh) * 2020-03-06 2020-06-23 上海瞻芯电子科技有限公司 超级结的制造方法及其超级结肖特基二极管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JPH02154464A (ja) * 1988-12-06 1990-06-13 Fuji Electric Co Ltd ショットキーバリアダイオード
JPH065736B2 (ja) * 1989-12-15 1994-01-19 株式会社東芝 ショットキー・ダイオード
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
US5241195A (en) 1992-08-13 1993-08-31 North Carolina State University At Raleigh Merged P-I-N/Schottky power rectifier having extended P-I-N junction
JP2809253B2 (ja) * 1992-10-02 1998-10-08 富士電機株式会社 注入制御型ショットキーバリア整流素子
JPH06163878A (ja) * 1992-11-24 1994-06-10 Fuji Electric Co Ltd 半導体装置
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
JPH08204210A (ja) * 1995-01-20 1996-08-09 Rohm Co Ltd ショットキーバリアダイオード
US6252288B1 (en) * 1999-01-19 2001-06-26 Rockwell Science Center, Llc High power trench-based rectifier with improved reverse breakdown characteristic
WO2000074130A1 (en) * 1999-05-28 2000-12-07 Advanced Power Devices, Inc. Discrete schottky diode device with reduced leakage current

Also Published As

Publication number Publication date
EP1139433A1 (de) 2001-10-04
JP2001284604A (ja) 2001-10-12
JP3860705B2 (ja) 2006-12-20
US6404032B1 (en) 2002-06-11
EP1139433B1 (de) 2011-03-23

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