FI20055057A - Puolijohdelaite - Google Patents

Puolijohdelaite Download PDF

Info

Publication number
FI20055057A
FI20055057A FI20055057A FI20055057A FI20055057A FI 20055057 A FI20055057 A FI 20055057A FI 20055057 A FI20055057 A FI 20055057A FI 20055057 A FI20055057 A FI 20055057A FI 20055057 A FI20055057 A FI 20055057A
Authority
FI
Finland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
FI20055057A
Other languages
English (en)
Swedish (sv)
Other versions
FI20055057A0 (fi
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FI20045172A external-priority patent/FI20045172A0/fi
Priority claimed from FI20045475A external-priority patent/FI20045475A0/fi
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20055057A priority Critical patent/FI20055057A/fi
Publication of FI20055057A0 publication Critical patent/FI20055057A0/fi
Priority to PCT/FI2005/050148 priority patent/WO2005109510A1/en
Priority to US11/596,054 priority patent/US20070222012A1/en
Priority to EP05739656A priority patent/EP1766685A1/en
Priority to JP2007512240A priority patent/JP2007537587A/ja
Publication of FI20055057A publication Critical patent/FI20055057A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
FI20055057A 2004-05-11 2005-02-08 Puolijohdelaite FI20055057A (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20055057A FI20055057A (fi) 2004-05-11 2005-02-08 Puolijohdelaite
PCT/FI2005/050148 WO2005109510A1 (en) 2004-05-11 2005-05-10 Semiconductor device
US11/596,054 US20070222012A1 (en) 2004-05-11 2005-05-10 Semiconductor Device
EP05739656A EP1766685A1 (en) 2004-05-11 2005-05-10 Semiconductor device
JP2007512240A JP2007537587A (ja) 2004-05-11 2005-05-10 半導体デバイス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20045172A FI20045172A0 (fi) 2004-05-11 2004-05-11 Säteilydetektorilaite
FI20045475A FI20045475A0 (fi) 2004-05-11 2004-12-13 Säteilydetektorilaite
FI20055057A FI20055057A (fi) 2004-05-11 2005-02-08 Puolijohdelaite

Publications (2)

Publication Number Publication Date
FI20055057A0 FI20055057A0 (fi) 2005-02-08
FI20055057A true FI20055057A (fi) 2005-11-12

Family

ID=34229038

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20055057A FI20055057A (fi) 2004-05-11 2005-02-08 Puolijohdelaite

Country Status (5)

Country Link
US (1) US20070222012A1 (fi)
EP (1) EP1766685A1 (fi)
JP (1) JP2007537587A (fi)
FI (1) FI20055057A (fi)
WO (1) WO2005109510A1 (fi)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20051236A0 (fi) 2005-12-01 2005-12-01 Artto Mikael Aurola Puolijohde apparaatti
DE102011077383A1 (de) * 2011-06-10 2012-12-13 Siemens Aktiengesellschaft Anordnung von zwei oder mehr Halbleiterbauelementen
JP6396775B2 (ja) * 2014-12-03 2018-09-26 ルネサスエレクトロニクス株式会社 撮像装置
JP6706481B2 (ja) * 2015-11-05 2020-06-10 ソニーセミコンダクタソリューションズ株式会社 撮像素子
WO2018201308A1 (en) * 2017-05-03 2018-11-08 Shenzhen Xpectvision Technology Co., Ltd. Method of making radiation detector
EP3477710B1 (en) 2017-10-26 2023-03-29 STMicroelectronics (Research & Development) Limited Avalanche photodiode and method of manufacturing the avalanche photodiode
CN111863607B (zh) * 2020-07-28 2023-05-05 哈尔滨工业大学 一种抗辐射功率晶体管及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4362575A (en) * 1981-08-27 1982-12-07 Rca Corporation Method of making buried channel charge coupled device with means for controlling excess charge
US4906584A (en) * 1985-02-25 1990-03-06 Tektronix, Inc. Fast channel single phase buried channel CCD
US4603426A (en) * 1985-04-04 1986-07-29 Rca Corporation Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage
GB8517081D0 (en) * 1985-07-05 1985-08-14 Gen Electric Co Plc Image sensors
US4821081A (en) * 1985-08-27 1989-04-11 Texas Instruments Incorporated Large pitch CCD with high charge transfer efficiency
US5889313A (en) * 1996-02-08 1999-03-30 University Of Hawaii Three-dimensional architecture for solid state radiation detectors
US5981988A (en) * 1996-04-26 1999-11-09 The Regents Of The University Of California Three-dimensional charge coupled device
US6259085B1 (en) * 1996-11-01 2001-07-10 The Regents Of The University Of California Fully depleted back illuminated CCD
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors
JP3248470B2 (ja) * 1997-11-21 2002-01-21 日本電気株式会社 電荷転送装置および電荷転送装置の製造方法
DE19828191C1 (de) * 1998-06-24 1999-07-29 Siemens Ag Lateral-Hochspannungstransistor
JP2000031451A (ja) * 1998-07-13 2000-01-28 Toshiba Corp 固体撮像装置およびその製造方法
DE59915172D1 (de) * 1999-08-19 2010-07-15 Infineon Technologies Ag Vertikal aufgebautes leistungshalbleiterbauelement
JP3860705B2 (ja) * 2000-03-31 2006-12-20 新電元工業株式会社 半導体装置
US6800877B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
DE10061528C1 (de) * 2000-12-11 2002-07-25 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement
JP2006140250A (ja) * 2004-11-11 2006-06-01 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
FI20055057A0 (fi) 2005-02-08
US20070222012A1 (en) 2007-09-27
EP1766685A1 (en) 2007-03-28
WO2005109510A1 (en) 2005-11-17
JP2007537587A (ja) 2007-12-20

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Legal Events

Date Code Title Description
FD Application lapsed