FI20055057A0 - Puolijohdelaite - Google Patents
PuolijohdelaiteInfo
- Publication number
- FI20055057A0 FI20055057A0 FI20055057A FI20055057A FI20055057A0 FI 20055057 A0 FI20055057 A0 FI 20055057A0 FI 20055057 A FI20055057 A FI 20055057A FI 20055057 A FI20055057 A FI 20055057A FI 20055057 A0 FI20055057 A0 FI 20055057A0
- Authority
- FI
- Finland
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20055057A FI20055057A (fi) | 2004-05-11 | 2005-02-08 | Puolijohdelaite |
JP2007512240A JP2007537587A (ja) | 2004-05-11 | 2005-05-10 | 半導体デバイス |
US11/596,054 US20070222012A1 (en) | 2004-05-11 | 2005-05-10 | Semiconductor Device |
PCT/FI2005/050148 WO2005109510A1 (en) | 2004-05-11 | 2005-05-10 | Semiconductor device |
EP05739656A EP1766685A1 (en) | 2004-05-11 | 2005-05-10 | Semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20045172A FI20045172A0 (fi) | 2004-05-11 | 2004-05-11 | Säteilydetektorilaite |
FI20045475A FI20045475A0 (fi) | 2004-05-11 | 2004-12-13 | Säteilydetektorilaite |
FI20055057A FI20055057A (fi) | 2004-05-11 | 2005-02-08 | Puolijohdelaite |
Publications (2)
Publication Number | Publication Date |
---|---|
FI20055057A0 true FI20055057A0 (fi) | 2005-02-08 |
FI20055057A FI20055057A (fi) | 2005-11-12 |
Family
ID=34229038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20055057A FI20055057A (fi) | 2004-05-11 | 2005-02-08 | Puolijohdelaite |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070222012A1 (fi) |
EP (1) | EP1766685A1 (fi) |
JP (1) | JP2007537587A (fi) |
FI (1) | FI20055057A (fi) |
WO (1) | WO2005109510A1 (fi) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI20051236A0 (fi) * | 2005-12-01 | 2005-12-01 | Artto Mikael Aurola | Puolijohde apparaatti |
DE102011077383A1 (de) * | 2011-06-10 | 2012-12-13 | Siemens Aktiengesellschaft | Anordnung von zwei oder mehr Halbleiterbauelementen |
JP6396775B2 (ja) * | 2014-12-03 | 2018-09-26 | ルネサスエレクトロニクス株式会社 | 撮像装置 |
JP6706481B2 (ja) * | 2015-11-05 | 2020-06-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
WO2018201308A1 (en) * | 2017-05-03 | 2018-11-08 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making radiation detector |
EP3477710B1 (en) | 2017-10-26 | 2023-03-29 | STMicroelectronics (Research & Development) Limited | Avalanche photodiode and method of manufacturing the avalanche photodiode |
CN111863607B (zh) * | 2020-07-28 | 2023-05-05 | 哈尔滨工业大学 | 一种抗辐射功率晶体管及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362575A (en) * | 1981-08-27 | 1982-12-07 | Rca Corporation | Method of making buried channel charge coupled device with means for controlling excess charge |
US4906584A (en) * | 1985-02-25 | 1990-03-06 | Tektronix, Inc. | Fast channel single phase buried channel CCD |
US4603426A (en) * | 1985-04-04 | 1986-07-29 | Rca Corporation | Floating-diffusion charge sensing for buried-channel CCD using a doubled clocking voltage |
GB8517081D0 (en) * | 1985-07-05 | 1985-08-14 | Gen Electric Co Plc | Image sensors |
US4821081A (en) * | 1985-08-27 | 1989-04-11 | Texas Instruments Incorporated | Large pitch CCD with high charge transfer efficiency |
US5889313A (en) * | 1996-02-08 | 1999-03-30 | University Of Hawaii | Three-dimensional architecture for solid state radiation detectors |
US5981988A (en) * | 1996-04-26 | 1999-11-09 | The Regents Of The University Of California | Three-dimensional charge coupled device |
US6259085B1 (en) * | 1996-11-01 | 2001-07-10 | The Regents Of The University Of California | Fully depleted back illuminated CCD |
US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
JP3248470B2 (ja) * | 1997-11-21 | 2002-01-21 | 日本電気株式会社 | 電荷転送装置および電荷転送装置の製造方法 |
DE19828191C1 (de) * | 1998-06-24 | 1999-07-29 | Siemens Ag | Lateral-Hochspannungstransistor |
JP2000031451A (ja) * | 1998-07-13 | 2000-01-28 | Toshiba Corp | 固体撮像装置およびその製造方法 |
WO2001015235A1 (de) * | 1999-08-19 | 2001-03-01 | Infineon Technologies Ag | Vertikal aufgebautes leistungshalbleiterbauelement |
JP3860705B2 (ja) * | 2000-03-31 | 2006-12-20 | 新電元工業株式会社 | 半導体装置 |
US6800877B2 (en) * | 2000-05-26 | 2004-10-05 | Exaconnect Corp. | Semi-conductor interconnect using free space electron switch |
DE10061528C1 (de) * | 2000-12-11 | 2002-07-25 | Infineon Technologies Ag | Mittels Feldeffekt steuerbares Halbleiterbauelement |
JP2006140250A (ja) * | 2004-11-11 | 2006-06-01 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2005
- 2005-02-08 FI FI20055057A patent/FI20055057A/fi not_active Application Discontinuation
- 2005-05-10 WO PCT/FI2005/050148 patent/WO2005109510A1/en active Application Filing
- 2005-05-10 EP EP05739656A patent/EP1766685A1/en not_active Withdrawn
- 2005-05-10 US US11/596,054 patent/US20070222012A1/en not_active Abandoned
- 2005-05-10 JP JP2007512240A patent/JP2007537587A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1766685A1 (en) | 2007-03-28 |
US20070222012A1 (en) | 2007-09-27 |
JP2007537587A (ja) | 2007-12-20 |
FI20055057A (fi) | 2005-11-12 |
WO2005109510A1 (en) | 2005-11-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed |