FI20051236A0 - Puolijohde apparaatti - Google Patents
Puolijohde apparaattiInfo
- Publication number
- FI20051236A0 FI20051236A0 FI20051236A FI20051236A FI20051236A0 FI 20051236 A0 FI20051236 A0 FI 20051236A0 FI 20051236 A FI20051236 A FI 20051236A FI 20051236 A FI20051236 A FI 20051236A FI 20051236 A0 FI20051236 A0 FI 20051236A0
- Authority
- FI
- Finland
- Prior art keywords
- gadget
- semiconductor
- semiconductor gadget
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20051236A FI20051236A0 (fi) | 2005-12-01 | 2005-12-01 | Puolijohde apparaatti |
US12/307,980 US8426897B2 (en) | 2005-12-01 | 2006-12-01 | Semiconductor apparatus |
EP06820113.6A EP2064749B1 (en) | 2005-12-01 | 2006-12-01 | Semiconductor apparatus |
PCT/FI2006/050534 WO2007063192A1 (en) | 2005-12-01 | 2006-12-01 | Semiconductor apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20051236A FI20051236A0 (fi) | 2005-12-01 | 2005-12-01 | Puolijohde apparaatti |
Publications (1)
Publication Number | Publication Date |
---|---|
FI20051236A0 true FI20051236A0 (fi) | 2005-12-01 |
Family
ID=35510606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20051236A FI20051236A0 (fi) | 2005-12-01 | 2005-12-01 | Puolijohde apparaatti |
Country Status (4)
Country | Link |
---|---|
US (1) | US8426897B2 (fi) |
EP (1) | EP2064749B1 (fi) |
FI (1) | FI20051236A0 (fi) |
WO (1) | WO2007063192A1 (fi) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2216817B1 (fr) * | 2009-02-05 | 2014-01-08 | STMicroelectronics (Crolles 2) SAS | Capteur d'images à semiconducteur à éclairement par la face arrière |
US20100327391A1 (en) * | 2009-06-26 | 2010-12-30 | Mccarten John P | Back-illuminated image sensor with electrically biased frontside and backside |
JP2012195509A (ja) * | 2011-03-17 | 2012-10-11 | Canon Inc | 半導体装置及びその製造方法 |
DE102011077383A1 (de) * | 2011-06-10 | 2012-12-13 | Siemens Aktiengesellschaft | Anordnung von zwei oder mehr Halbleiterbauelementen |
US9013615B2 (en) * | 2011-09-21 | 2015-04-21 | Semiconductor Components Industries, Llc | Image sensor with flexible interconnect capabilities |
WO2019123591A1 (ja) * | 2017-12-21 | 2019-06-27 | オリンパス株式会社 | 半導体装置 |
CN114927535B (zh) * | 2022-05-20 | 2023-09-22 | 无锡鉴微华芯科技有限公司 | 具有双三维全包围保护环的x射线检测器及制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4472728A (en) * | 1982-02-19 | 1984-09-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Imaging X-ray spectrometer |
JPS594175A (ja) | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 電界効果半導体装置 |
JP2586455B2 (ja) | 1986-07-07 | 1997-02-26 | ソニー株式会社 | 固体撮像装置 |
JP2517375B2 (ja) | 1988-12-19 | 1996-07-24 | 三菱電機株式会社 | 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法 |
US5889313A (en) | 1996-02-08 | 1999-03-30 | University Of Hawaii | Three-dimensional architecture for solid state radiation detectors |
US5981988A (en) | 1996-04-26 | 1999-11-09 | The Regents Of The University Of California | Three-dimensional charge coupled device |
US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
JP2003086827A (ja) | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
US6710418B1 (en) * | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
FR2855655B1 (fr) | 2003-05-26 | 2005-08-19 | Commissariat Energie Atomique | Detecteur de rayonnement infrarouge photovoltaique a grille conductrice independante et tridimensionnelle |
FI20055057A (fi) * | 2004-05-11 | 2005-11-12 | Artto Aurola | Puolijohdelaite |
FI20040966A (fi) * | 2004-07-09 | 2006-01-10 | Artto Aurola | Pinta-akkumulaatiorakenne säteilydetektoria varten |
-
2005
- 2005-12-01 FI FI20051236A patent/FI20051236A0/fi not_active Application Discontinuation
-
2006
- 2006-12-01 US US12/307,980 patent/US8426897B2/en active Active
- 2006-12-01 WO PCT/FI2006/050534 patent/WO2007063192A1/en active Application Filing
- 2006-12-01 EP EP06820113.6A patent/EP2064749B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20090206436A1 (en) | 2009-08-20 |
WO2007063192A1 (en) | 2007-06-07 |
US8426897B2 (en) | 2013-04-23 |
EP2064749A4 (en) | 2012-07-04 |
EP2064749B1 (en) | 2019-04-10 |
EP2064749A1 (en) | 2009-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL300966I1 (nl) | caplacizumab | |
DE602006019639D1 (de) | Nichtflüchtige halbleiterspeicheranordnung | |
ATE408603T1 (de) | Pyrazolylcarboxanilide | |
CR9974A (es) | Gavión | |
DE502006003394D1 (de) | Lehnenklappung | |
DE602006012066D1 (de) | Daraus | |
DE502006005667D1 (de) | Gelenklager | |
ATE549324T1 (de) | Tetrahydrobenzoxazine | |
DE602005012797D1 (de) | Halbleiterelement | |
DE112005003806A5 (de) | Halbleiterlaservorrichtung | |
DE112006002964A5 (de) | Zweirichtungsreflektanzverteilungsmessgerät | |
FI20051236A0 (fi) | Puolijohde apparaatti | |
DE502005005839D1 (de) | Feldgeerät | |
DE502006001397D1 (de) | Lagerbuchse | |
DE602006016949D1 (de) | Halbleiterbauelement | |
ATE485368T1 (de) | Hiv - impfung | |
DE502006004302D1 (de) | Verschlusskappe | |
DE502006003147D1 (de) | Verbundgußplatte | |
DE102005052834B8 (de) | Punktschweißklebverbindung | |
AT501523A3 (de) | Estrich | |
DE102006033170A8 (de) | Einfassnähmaschine | |
DE502006000445D1 (de) | Mulchmähdeck | |
DE502006002564D1 (de) | Ndungen | |
AT501968A3 (de) | Mitführhilfe | |
DE502006004709D1 (de) | Gurtstraffvorrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD | Application lapsed |