DE602005012797D1 - Halbleiterelement - Google Patents

Halbleiterelement

Info

Publication number
DE602005012797D1
DE602005012797D1 DE602005012797T DE602005012797T DE602005012797D1 DE 602005012797 D1 DE602005012797 D1 DE 602005012797D1 DE 602005012797 T DE602005012797 T DE 602005012797T DE 602005012797 T DE602005012797 T DE 602005012797T DE 602005012797 D1 DE602005012797 D1 DE 602005012797D1
Authority
DE
Germany
Prior art keywords
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005012797T
Other languages
English (en)
Inventor
Tomoyuki Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE602005012797D1 publication Critical patent/DE602005012797D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
DE602005012797T 2005-03-25 2005-09-30 Halbleiterelement Active DE602005012797D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005088527A JP4632833B2 (ja) 2005-03-25 2005-03-25 半導体装置

Publications (1)

Publication Number Publication Date
DE602005012797D1 true DE602005012797D1 (de) 2009-04-02

Family

ID=35764477

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005012797T Active DE602005012797D1 (de) 2005-03-25 2005-09-30 Halbleiterelement

Country Status (4)

Country Link
US (1) US7280272B2 (de)
EP (1) EP1705812B1 (de)
JP (1) JP4632833B2 (de)
DE (1) DE602005012797D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008529316A (ja) * 2005-02-02 2008-07-31 コヴェガ・インコーポレーテッド 不均一な注入電流密度を有する半導体光増幅器
JP4632833B2 (ja) * 2005-03-25 2011-02-16 富士通株式会社 半導体装置
KR20070108422A (ko) * 2006-01-09 2007-11-12 한국전자통신연구원 동적 전류 주입에 의한 하향 광신호를 재활용하는 반도체광 증폭기 및 그 구동장치
JP4849915B2 (ja) * 2006-03-15 2012-01-11 富士通株式会社 光集積素子及び光モジュール
US8644711B2 (en) 2006-10-20 2014-02-04 Electronics And Telecommunications Research Institute Apparatus and method for OLT and ONU for wavelength agnostic wavelength-division multiplexed passive optical networks
US8594469B2 (en) * 2008-12-22 2013-11-26 Electronics And Telecommunications Research Institute Optical amplifier
JP6414464B2 (ja) * 2014-12-24 2018-10-31 セイコーエプソン株式会社 発光装置およびプロジェクター
CN107238992B (zh) * 2016-03-28 2021-05-25 上海诺基亚贝尔股份有限公司 一种半导体光放大器装置和操作方法
EP3664233A1 (de) 2018-12-04 2020-06-10 Huawei Technologies Co., Ltd. Optischer verstärker mit vergrössertem dynamikumfang

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2631716B2 (ja) * 1988-09-20 1997-07-16 富士通株式会社 半導体発光装置
GB2301708A (en) 1995-06-03 1996-12-11 Sharp Kk Variable coherence light source
JP2937148B2 (ja) 1996-11-06 1999-08-23 日本電気株式会社 半導体集積型偏波モード変換器
JP3511445B2 (ja) * 1997-02-13 2004-03-29 日本電信電話株式会社 光双方向伝送システム
JPH11168185A (ja) * 1997-12-03 1999-06-22 Rohm Co Ltd 積層基板体および半導体装置
JPH11274805A (ja) * 1998-03-20 1999-10-08 Ricoh Co Ltd 高周波スイッチ並びに製造方法、及び集積化高周波スイッチアレイ
US6822787B1 (en) * 1999-04-26 2004-11-23 Finisar Corporation Lasing semiconductor optical amplifier with optical signal power monitor
US6747793B1 (en) * 1999-11-15 2004-06-08 Axsun Technologies, Inc. System with integrated semiconductor optical amplifier array and switching matrix
JP4743938B2 (ja) * 2000-06-12 2011-08-10 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP3839267B2 (ja) * 2001-03-08 2006-11-01 株式会社ルネサステクノロジ 半導体装置及びそれを用いた通信端末装置
US6597497B2 (en) * 2001-10-04 2003-07-22 Shih-Yuan Wang Semiconductor optical amplifier with transverse laser cavity intersecting optical signal path and method of fabrication thereof
US6714344B2 (en) * 2001-10-04 2004-03-30 Gazillion Bits, Inc. Reducing output noise in a ballast-powered semiconductor optical amplifier
CA2463522C (en) 2001-10-09 2012-03-27 Infinera Corporation Transmitter photonic integrated circuit (txpic) chip with enhanced power and yield without on-chip amplification
GB0206226D0 (en) * 2002-03-16 2002-05-01 Intense Photonics Ltd Electro-absorption modulator with broad optical bandwidth
JP4729861B2 (ja) * 2004-04-02 2011-07-20 株式会社日立製作所 半導体記憶装置
JP4632833B2 (ja) * 2005-03-25 2011-02-16 富士通株式会社 半導体装置

Also Published As

Publication number Publication date
JP2006269926A (ja) 2006-10-05
US20060215255A1 (en) 2006-09-28
JP4632833B2 (ja) 2011-02-16
EP1705812B1 (de) 2009-02-18
US7280272B2 (en) 2007-10-09
EP1705812A1 (de) 2006-09-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE