FI20040966A - Pinta-akkumulaatiorakenne säteilydetektoria varten - Google Patents
Pinta-akkumulaatiorakenne säteilydetektoria varten Download PDFInfo
- Publication number
- FI20040966A FI20040966A FI20040966A FI20040966A FI20040966A FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A FI20040966 A FI 20040966A
- Authority
- FI
- Finland
- Prior art keywords
- radiation detector
- surface accumulation
- accumulation design
- design
- detector
- Prior art date
Links
- 238000009825 accumulation Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20040966A FI20040966A (fi) | 2004-07-09 | 2004-07-09 | Pinta-akkumulaatiorakenne säteilydetektoria varten |
PCT/FI2005/050242 WO2006005803A1 (en) | 2004-07-09 | 2005-06-28 | Semiconductor radiation detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20040966A FI20040966A (fi) | 2004-07-09 | 2004-07-09 | Pinta-akkumulaatiorakenne säteilydetektoria varten |
Publications (2)
Publication Number | Publication Date |
---|---|
FI20040966A0 FI20040966A0 (fi) | 2004-07-09 |
FI20040966A true FI20040966A (fi) | 2006-01-10 |
Family
ID=32749186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20040966A FI20040966A (fi) | 2004-07-09 | 2004-07-09 | Pinta-akkumulaatiorakenne säteilydetektoria varten |
Country Status (2)
Country | Link |
---|---|
FI (1) | FI20040966A (fi) |
WO (1) | WO2006005803A1 (fi) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2950346A2 (en) | 2004-08-20 | 2015-12-02 | Artto Aurola | Semiconductor radiation detector with a modified internal gate structure |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI20051236A0 (fi) | 2005-12-01 | 2005-12-01 | Artto Mikael Aurola | Puolijohde apparaatti |
DE102007055676A1 (de) * | 2007-11-21 | 2009-06-04 | Siemens Ag | Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung |
FR2972295B1 (fr) * | 2011-03-04 | 2013-07-19 | Soc Fr Detecteurs Infrarouges Sofradir | Matrice de detection a conditions de polarisation ameliorees et procede de fabrication |
FR2972296B1 (fr) * | 2011-03-04 | 2013-11-15 | Soc Fr Detecteurs Infrarouges Sofradir | Matrice de detection a conditions de polarisation ameliorees et procede de fabrication |
EP2495764B1 (fr) * | 2011-03-04 | 2017-10-04 | Société Française de Détecteurs Infrarouges - SOFRADIR | Matrice de détection à conditions de polarisation améliorées et procédé de fabrication |
US9224768B2 (en) * | 2013-08-05 | 2015-12-29 | Raytheon Company | Pin diode structure having surface charge suppression |
WO2019123591A1 (ja) * | 2017-12-21 | 2019-06-27 | オリンパス株式会社 | 半導体装置 |
CN115498063A (zh) * | 2022-07-25 | 2022-12-20 | 核芯光电科技(山东)有限公司 | 一种基于栅极结构的Si-PIN探测装置及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1532859A (en) * | 1976-03-30 | 1978-11-22 | Mullard Ltd | Charge coupled circuit arrangements and devices |
US5808329A (en) * | 1996-07-15 | 1998-09-15 | Raytheon Company | Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials |
US6259085B1 (en) * | 1996-11-01 | 2001-07-10 | The Regents Of The University Of California | Fully depleted back illuminated CCD |
US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
-
2004
- 2004-07-09 FI FI20040966A patent/FI20040966A/fi not_active IP Right Cessation
-
2005
- 2005-06-28 WO PCT/FI2005/050242 patent/WO2006005803A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2950346A2 (en) | 2004-08-20 | 2015-12-02 | Artto Aurola | Semiconductor radiation detector with a modified internal gate structure |
Also Published As
Publication number | Publication date |
---|---|
FI20040966A0 (fi) | 2004-07-09 |
WO2006005803A1 (en) | 2006-01-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MA | Patent expired |