FR2972295B1 - Matrice de detection a conditions de polarisation ameliorees et procede de fabrication - Google Patents
Matrice de detection a conditions de polarisation ameliorees et procede de fabricationInfo
- Publication number
- FR2972295B1 FR2972295B1 FR1100661A FR1100661A FR2972295B1 FR 2972295 B1 FR2972295 B1 FR 2972295B1 FR 1100661 A FR1100661 A FR 1100661A FR 1100661 A FR1100661 A FR 1100661A FR 2972295 B1 FR2972295 B1 FR 2972295B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- same
- detection matrix
- polarization conditions
- improved polarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000010287 polarization Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1100661A FR2972295B1 (fr) | 2011-03-04 | 2011-03-04 | Matrice de detection a conditions de polarisation ameliorees et procede de fabrication |
EP12354012.2A EP2495764B1 (fr) | 2011-03-04 | 2012-03-02 | Matrice de détection à conditions de polarisation améliorées et procédé de fabrication |
US13/410,937 US8669630B2 (en) | 2011-03-04 | 2012-03-02 | Detection matrix with improved biasing conditions and fabrication method |
JP2012048245A JP5985211B2 (ja) | 2011-03-04 | 2012-03-05 | バイアス条件が改良された検出マトリクス及び製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1100661A FR2972295B1 (fr) | 2011-03-04 | 2011-03-04 | Matrice de detection a conditions de polarisation ameliorees et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2972295A1 FR2972295A1 (fr) | 2012-09-07 |
FR2972295B1 true FR2972295B1 (fr) | 2013-07-19 |
Family
ID=44677917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1100661A Active FR2972295B1 (fr) | 2011-03-04 | 2011-03-04 | Matrice de detection a conditions de polarisation ameliorees et procede de fabrication |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2972295B1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3467013B2 (ja) * | 1999-12-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
US7170143B2 (en) * | 2003-10-20 | 2007-01-30 | Hamamatsu Photonics K.K. | Semiconductor photo-detection device and radiation apparatus |
JP4075773B2 (ja) * | 2003-11-05 | 2008-04-16 | ソニー株式会社 | 固体撮像装置 |
FI20040966A (fi) * | 2004-07-09 | 2006-01-10 | Artto Aurola | Pinta-akkumulaatiorakenne säteilydetektoria varten |
US7755079B2 (en) * | 2007-08-17 | 2010-07-13 | Sandia Corporation | Strained-layer superlattice focal plane array having a planar structure |
JP5150283B2 (ja) * | 2008-01-30 | 2013-02-20 | 浜松ホトニクス株式会社 | 固体撮像装置 |
-
2011
- 2011-03-04 FR FR1100661A patent/FR2972295B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR2972295A1 (fr) | 2012-09-07 |
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Legal Events
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Year of fee payment: 5 |
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Effective date: 20160115 |
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CD | Change of name or company name |
Owner name: LYNRED, FR Effective date: 20200401 |
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Year of fee payment: 11 |
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PLFP | Fee payment |
Year of fee payment: 12 |
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PLFP | Fee payment |
Year of fee payment: 14 |