JP5150283B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP5150283B2 JP5150283B2 JP2008019345A JP2008019345A JP5150283B2 JP 5150283 B2 JP5150283 B2 JP 5150283B2 JP 2008019345 A JP2008019345 A JP 2008019345A JP 2008019345 A JP2008019345 A JP 2008019345A JP 5150283 B2 JP5150283 B2 JP 5150283B2
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- pixel
- photodiode
- solid
- imaging device
- state imaging
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- 238000003384 imaging method Methods 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 4
- 238000009751 slip forming Methods 0.000 claims description 3
- 238000010191 image analysis Methods 0.000 claims description 2
- 230000002950 deficient Effects 0.000 description 23
- 230000010354 integration Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000007599 discharging Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
- H01L27/14656—Overflow drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
- H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Description
Claims (3)
- 入射光強度に応じた量の電荷を発生するフォトダイオードと、このフォトダイオードと接続された読出用スイッチと、を各々含むM×N個の画素部P1,1〜PM,NがM行N列に2次元配列された受光部を備える固体撮像装置であって、
各画素部Pm,nに含まれるフォトダイオードが、第1導電型の第1半導体領域上に第2導電型の第2半導体領域が設けられて形成され、
前記受光部における画素部間の領域に、前記第1半導体領域より不純物濃度が高い第1導電型の第3半導体領域からなるチャネルストッパが連続して形成され、
M×N個の画素部P1,1〜PM,Nのうちの任意の互いに隣接する2×2個の画素部が周囲の4方向に存在する画素部間の領域において、前記第1半導体領域上に第2導電型の第4半導体領域が設けられてダミー用フォトダイオードが離散的に形成され、各々のダミー用フォトダイオードが前記チャネルストッパにより360°囲まれている、
ことを特徴とする固体撮像装置(ただし、M,Nは2以上の整数、mは1以上M以下の各整数、nは1以上N以下の各整数)。 - M×N個の画素部P1,1〜PM,Nのうちの任意の互いに隣接する2個の画素部により挟まれる領域において、前記第1半導体領域上に第2導電型の第5半導体領域が設けられてダミー用フォトダイオードが離散的に形成され、各々のダミー用フォトダイオードが前記チャネルストッパにより360°囲まれている、ことを特徴とする請求項1記載の固体撮像装置。
- 被写体に向けてX線を出力するX線出力部と、
前記X線出力部から出力されて前記被写体を経て到達したX線を受光し撮像する請求項1または2に記載の固体撮像装置と、
前記X線出力部および前記固体撮像装置を前記被写体に対して相対移動させる移動手段と、
前記固体撮像装置から出力されるフレームデータを入力し、そのフレームデータに基づいて前記被写体の断層画像を生成する画像解析部と、
を備えることを特徴とするX線CT装置。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008019345A JP5150283B2 (ja) | 2008-01-30 | 2008-01-30 | 固体撮像装置 |
KR1020107007879A KR101575378B1 (ko) | 2008-01-30 | 2009-01-23 | 고체 촬상 장치 및 이를 포함하는 x선 ct 장치 |
TW098103056A TWI452699B (zh) | 2008-01-30 | 2009-01-23 | Solid-state imaging device and X-ray CT device containing the same |
US12/864,575 US8488735B2 (en) | 2008-01-30 | 2009-01-23 | Solid-state imager and X-ray CT apparatus including same |
PCT/JP2009/051105 WO2009096338A1 (ja) | 2008-01-30 | 2009-01-23 | 固体撮像装置及びそれを含むx線ct装置 |
TW103126819A TWI509785B (zh) | 2008-01-30 | 2009-01-23 | Solid-state imaging device and X-ray CT device containing the same |
CN200980103667.1A CN101933143B (zh) | 2008-01-30 | 2009-01-23 | 固体摄像装置以及包括其的x射线ct装置 |
EP09705131.2A EP2237317B1 (en) | 2008-01-30 | 2009-01-23 | Solid-state imager and x-ray ct apparatus including same |
US13/921,565 US8675813B2 (en) | 2008-01-30 | 2013-06-19 | Solid-state imager and X-ray CT apparatus including same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008019345A JP5150283B2 (ja) | 2008-01-30 | 2008-01-30 | 固体撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012264457A Division JP5444444B2 (ja) | 2012-12-03 | 2012-12-03 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009182127A JP2009182127A (ja) | 2009-08-13 |
JP5150283B2 true JP5150283B2 (ja) | 2013-02-20 |
Family
ID=40912692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008019345A Active JP5150283B2 (ja) | 2008-01-30 | 2008-01-30 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8488735B2 (ja) |
EP (1) | EP2237317B1 (ja) |
JP (1) | JP5150283B2 (ja) |
KR (1) | KR101575378B1 (ja) |
CN (1) | CN101933143B (ja) |
TW (2) | TWI452699B (ja) |
WO (1) | WO2009096338A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5150283B2 (ja) * | 2008-01-30 | 2013-02-20 | 浜松ホトニクス株式会社 | 固体撮像装置 |
FR2972295B1 (fr) * | 2011-03-04 | 2013-07-19 | Soc Fr Detecteurs Infrarouges Sofradir | Matrice de detection a conditions de polarisation ameliorees et procede de fabrication |
EP2495764B1 (fr) | 2011-03-04 | 2017-10-04 | Société Française de Détecteurs Infrarouges - SOFRADIR | Matrice de détection à conditions de polarisation améliorées et procédé de fabrication |
JP5199497B2 (ja) * | 2011-08-31 | 2013-05-15 | 富士フイルム株式会社 | 放射線画像撮影装置、放射線画像撮影システム、放射線画像撮影装置の制御プログラム、及び放射線画像撮影装置の制御方法 |
FR2983640B1 (fr) | 2011-12-02 | 2014-06-20 | Soc Fr Detecteurs Infrarouges Sofradir | Matrice de detection compacte a conditions de polarisation ameliorees |
JP5926634B2 (ja) * | 2012-07-03 | 2016-05-25 | キヤノン株式会社 | 固体撮像装置及びカメラ |
JP6188433B2 (ja) * | 2013-06-07 | 2017-08-30 | 浜松ホトニクス株式会社 | 固体撮像装置 |
DE102015213911B4 (de) * | 2015-07-23 | 2019-03-07 | Siemens Healthcare Gmbh | Verfahren zum Erzeugen eines Röntgenbildes und Datenverarbeitungseinrichtung zum Ausführen des Verfahrens |
EP3847485A4 (en) * | 2018-09-07 | 2022-04-06 | Shenzhen Xpectvision Technology Co., Ltd. | IMAGE SENSOR WITH RADIATION DETECTORS OF DIFFERENT ORIENTATION |
CN112703427A (zh) * | 2018-09-21 | 2021-04-23 | 深圳帧观德芯科技有限公司 | 一种成像系统 |
KR102595513B1 (ko) * | 2018-12-28 | 2023-10-27 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출장치 및 그의 구동방법 |
JP2022013031A (ja) * | 2020-07-03 | 2022-01-18 | キヤノンメディカルシステムズ株式会社 | 放射線検出器および放射線診断装置 |
Family Cites Families (23)
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JPS57109476A (en) * | 1980-12-25 | 1982-07-07 | Matsushita Electronics Corp | Solid image pickup device |
JPH0321083A (ja) | 1989-06-16 | 1991-01-29 | Sharp Corp | フォトダイオード |
JPH0828493B2 (ja) * | 1989-11-06 | 1996-03-21 | 富士通株式会社 | 光検知器 |
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JP3684169B2 (ja) * | 2000-04-21 | 2005-08-17 | キヤノン株式会社 | 固体撮像装置 |
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JP4861037B2 (ja) * | 2006-03-31 | 2012-01-25 | 株式会社日立メディコ | 計測装置 |
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JP5150283B2 (ja) * | 2008-01-30 | 2013-02-20 | 浜松ホトニクス株式会社 | 固体撮像装置 |
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2008
- 2008-01-30 JP JP2008019345A patent/JP5150283B2/ja active Active
-
2009
- 2009-01-23 TW TW098103056A patent/TWI452699B/zh active
- 2009-01-23 KR KR1020107007879A patent/KR101575378B1/ko active IP Right Grant
- 2009-01-23 WO PCT/JP2009/051105 patent/WO2009096338A1/ja active Application Filing
- 2009-01-23 EP EP09705131.2A patent/EP2237317B1/en active Active
- 2009-01-23 CN CN200980103667.1A patent/CN101933143B/zh active Active
- 2009-01-23 US US12/864,575 patent/US8488735B2/en active Active
- 2009-01-23 TW TW103126819A patent/TWI509785B/zh active
-
2013
- 2013-06-19 US US13/921,565 patent/US8675813B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8675813B2 (en) | 2014-03-18 |
TW201444071A (zh) | 2014-11-16 |
KR101575378B1 (ko) | 2015-12-07 |
TW200947716A (en) | 2009-11-16 |
EP2237317A4 (en) | 2012-05-02 |
US20110019795A1 (en) | 2011-01-27 |
TWI509785B (zh) | 2015-11-21 |
KR20100103785A (ko) | 2010-09-28 |
US8488735B2 (en) | 2013-07-16 |
EP2237317B1 (en) | 2014-07-02 |
US20130279650A1 (en) | 2013-10-24 |
JP2009182127A (ja) | 2009-08-13 |
CN101933143B (zh) | 2011-12-21 |
CN101933143A (zh) | 2010-12-29 |
TWI452699B (zh) | 2014-09-11 |
EP2237317A1 (en) | 2010-10-06 |
WO2009096338A1 (ja) | 2009-08-06 |
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