FR2972296B1 - Matrice de detection a conditions de polarisation ameliorees et procede de fabrication - Google Patents

Matrice de detection a conditions de polarisation ameliorees et procede de fabrication

Info

Publication number
FR2972296B1
FR2972296B1 FR1100663A FR1100663A FR2972296B1 FR 2972296 B1 FR2972296 B1 FR 2972296B1 FR 1100663 A FR1100663 A FR 1100663A FR 1100663 A FR1100663 A FR 1100663A FR 2972296 B1 FR2972296 B1 FR 2972296B1
Authority
FR
France
Prior art keywords
contact
type area
bump
type
detection matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1100663A
Other languages
English (en)
Other versions
FR2972296A1 (fr
Inventor
Fabien Chabuel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lynred SAS
Original Assignee
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS filed Critical Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority to FR1100663A priority Critical patent/FR2972296B1/fr
Priority to EP12354012.2A priority patent/EP2495764B1/fr
Priority to US13/410,937 priority patent/US8669630B2/en
Priority to JP2012048245A priority patent/JP5985211B2/ja
Publication of FR2972296A1 publication Critical patent/FR2972296A1/fr
Application granted granted Critical
Publication of FR2972296B1 publication Critical patent/FR2972296B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR1100663A 2011-03-04 2011-03-04 Matrice de detection a conditions de polarisation ameliorees et procede de fabrication Active FR2972296B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1100663A FR2972296B1 (fr) 2011-03-04 2011-03-04 Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
EP12354012.2A EP2495764B1 (fr) 2011-03-04 2012-03-02 Matrice de détection à conditions de polarisation améliorées et procédé de fabrication
US13/410,937 US8669630B2 (en) 2011-03-04 2012-03-02 Detection matrix with improved biasing conditions and fabrication method
JP2012048245A JP5985211B2 (ja) 2011-03-04 2012-03-05 バイアス条件が改良された検出マトリクス及び製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1100663A FR2972296B1 (fr) 2011-03-04 2011-03-04 Matrice de detection a conditions de polarisation ameliorees et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2972296A1 FR2972296A1 (fr) 2012-09-07
FR2972296B1 true FR2972296B1 (fr) 2013-11-15

Family

ID=44587844

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1100663A Active FR2972296B1 (fr) 2011-03-04 2011-03-04 Matrice de detection a conditions de polarisation ameliorees et procede de fabrication

Country Status (1)

Country Link
FR (1) FR2972296B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3467013B2 (ja) * 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US7170143B2 (en) * 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
JP4075773B2 (ja) * 2003-11-05 2008-04-16 ソニー株式会社 固体撮像装置
FI20040966A (fi) * 2004-07-09 2006-01-10 Artto Aurola Pinta-akkumulaatiorakenne säteilydetektoria varten

Also Published As

Publication number Publication date
FR2972296A1 (fr) 2012-09-07

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