FI20040966A0 - Pinta-akkumulaatiorakenne säteilydetektoria varten - Google Patents

Pinta-akkumulaatiorakenne säteilydetektoria varten

Info

Publication number
FI20040966A0
FI20040966A0 FI20040966A FI20040966A FI20040966A0 FI 20040966 A0 FI20040966 A0 FI 20040966A0 FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A0 FI20040966 A0 FI 20040966A0
Authority
FI
Finland
Prior art keywords
radiation detector
accumulator structure
surface accumulator
detector
radiation
Prior art date
Application number
FI20040966A
Other languages
English (en)
Swedish (sv)
Other versions
FI20040966A (fi
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20040966A priority Critical patent/FI20040966A/fi
Publication of FI20040966A0 publication Critical patent/FI20040966A0/fi
Priority to PCT/FI2005/050242 priority patent/WO2006005803A1/en
Publication of FI20040966A publication Critical patent/FI20040966A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
FI20040966A 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten FI20040966A (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966A (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten
PCT/FI2005/050242 WO2006005803A1 (en) 2004-07-09 2005-06-28 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966A (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten

Publications (2)

Publication Number Publication Date
FI20040966A0 true FI20040966A0 (fi) 2004-07-09
FI20040966A FI20040966A (fi) 2006-01-10

Family

ID=32749186

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20040966A FI20040966A (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten

Country Status (2)

Country Link
FI (1) FI20040966A (fi)
WO (1) WO2006005803A1 (fi)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2007002133A (es) 2004-08-20 2007-08-14 Artto Aurola Detector de radiacion de semiconductor con una estructura de compuerta interna modificada.
FI20051236A0 (fi) 2005-12-01 2005-12-01 Artto Mikael Aurola Puolijohde apparaatti
DE102007055676A1 (de) * 2007-11-21 2009-06-04 Siemens Ag Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung
FR2972295B1 (fr) * 2011-03-04 2013-07-19 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
EP2495764B1 (fr) * 2011-03-04 2017-10-04 Société Française de Détecteurs Infrarouges - SOFRADIR Matrice de détection à conditions de polarisation améliorées et procédé de fabrication
FR2972296B1 (fr) * 2011-03-04 2013-11-15 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
US9224768B2 (en) * 2013-08-05 2015-12-29 Raytheon Company Pin diode structure having surface charge suppression
WO2019123591A1 (ja) * 2017-12-21 2019-06-27 オリンパス株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
US5808329A (en) * 1996-07-15 1998-09-15 Raytheon Company Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials
US6259085B1 (en) * 1996-11-01 2001-07-10 The Regents Of The University Of California Fully depleted back illuminated CCD
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Also Published As

Publication number Publication date
FI20040966A (fi) 2006-01-10
WO2006005803A1 (en) 2006-01-19

Similar Documents

Publication Publication Date Title
DE602005024280D1 (de) Objektdetektor
DE502005008677D1 (de) Bestrahlungseinrichtung
DE602005022523D1 (de) Fahrbahnbegrenzungsdetektor
SE0702452L (sv) Strålningsterapianordning
GB0411402D0 (en) Penetrating radiation measurements
FI20050597A0 (fi) Pistoolintunnistin
GB2426065B (en) Detector
DE602005008850D1 (de) Induktiver Verschiebungsdetektor
EP1739420A4 (en) ENVIRONMENT DIFFERENCE DETECTOR
DE602005020905D1 (de) Röntgengerät
DE502004003843D1 (de) Fluoroskopiebild-Verifizierung
ATE401914T1 (de) Kassettenanordnung
GB0506203D0 (en) Radiation detector
DE502006005182D1 (de) Heterocyclylamid-substituierte imidazole
DE602005012474D1 (de) Bilderzeugung
DE602004008869D1 (de) Leckdetektor
EP1909116A4 (en) RADIATION DETECTOR
FI20041123A0 (fi) Palkkirakenne
DE602007012508D1 (de) Strahlungsdetektor
DK1955056T3 (da) Partikeldetektor
FI20040966A0 (fi) Pinta-akkumulaatiorakenne säteilydetektoria varten
ATE374604T1 (de) Coffein enthaltendes konfekt
DE602004026543D1 (de) Auslegeraufhängung
DE602006016576D1 (de) Strahlentherapieverstärker
DE602006003657D1 (de) Strahlungsdetektor

Legal Events

Date Code Title Description
MA Patent expired