FI20040966A0 - Pinta-akkumulaatiorakenne säteilydetektoria varten - Google Patents

Pinta-akkumulaatiorakenne säteilydetektoria varten

Info

Publication number
FI20040966A0
FI20040966A0 FI20040966A FI20040966A FI20040966A0 FI 20040966 A0 FI20040966 A0 FI 20040966A0 FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A FI20040966 A FI 20040966A FI 20040966 A0 FI20040966 A0 FI 20040966A0
Authority
FI
Finland
Prior art keywords
radiation detector
accumulator structure
surface accumulator
detector
radiation
Prior art date
Application number
FI20040966A
Other languages
English (en)
Swedish (sv)
Other versions
FI20040966A (fi
Inventor
Artto Aurola
Original Assignee
Artto Aurola
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Artto Aurola filed Critical Artto Aurola
Priority to FI20040966A priority Critical patent/FI20040966A/fi
Publication of FI20040966A0 publication Critical patent/FI20040966A0/fi
Priority to PCT/FI2005/050242 priority patent/WO2006005803A1/en
Publication of FI20040966A publication Critical patent/FI20040966A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
FI20040966A 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten FI20040966A (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966A (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten
PCT/FI2005/050242 WO2006005803A1 (en) 2004-07-09 2005-06-28 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20040966A FI20040966A (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten

Publications (2)

Publication Number Publication Date
FI20040966A0 true FI20040966A0 (fi) 2004-07-09
FI20040966A FI20040966A (fi) 2006-01-10

Family

ID=32749186

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20040966A FI20040966A (fi) 2004-07-09 2004-07-09 Pinta-akkumulaatiorakenne säteilydetektoria varten

Country Status (2)

Country Link
FI (1) FI20040966A (fi)
WO (1) WO2006005803A1 (fi)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5081621B2 (ja) 2004-08-20 2012-11-28 アウロラ、アルット 改変内部ゲート構造を用いた半導体放射線検出器
FI20051236A0 (fi) * 2005-12-01 2005-12-01 Artto Mikael Aurola Puolijohde apparaatti
DE102007055676A1 (de) * 2007-11-21 2009-06-04 Siemens Ag Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung
FR2972295B1 (fr) * 2011-03-04 2013-07-19 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
US8669630B2 (en) 2011-03-04 2014-03-11 Societe Francaise de Detecteurs Infrarouges—Sofradir Detection matrix with improved biasing conditions and fabrication method
FR2972296B1 (fr) * 2011-03-04 2013-11-15 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
US9224768B2 (en) * 2013-08-05 2015-12-29 Raytheon Company Pin diode structure having surface charge suppression
WO2019123591A1 (ja) * 2017-12-21 2019-06-27 オリンパス株式会社 半導体装置
CN115498063A (zh) * 2022-07-25 2022-12-20 核芯光电科技(山东)有限公司 一种基于栅极结构的Si-PIN探测装置及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
US5808329A (en) * 1996-07-15 1998-09-15 Raytheon Company Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials
US6259085B1 (en) * 1996-11-01 2001-07-10 The Regents Of The University Of California Fully depleted back illuminated CCD
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Also Published As

Publication number Publication date
WO2006005803A1 (en) 2006-01-19
FI20040966A (fi) 2006-01-10

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Legal Events

Date Code Title Description
MA Patent expired