DE602006016949D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE602006016949D1
DE602006016949D1 DE602006016949T DE602006016949T DE602006016949D1 DE 602006016949 D1 DE602006016949 D1 DE 602006016949D1 DE 602006016949 T DE602006016949 T DE 602006016949T DE 602006016949 T DE602006016949 T DE 602006016949T DE 602006016949 D1 DE602006016949 D1 DE 602006016949D1
Authority
DE
Germany
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006016949T
Other languages
English (en)
Inventor
Yutaka Shionoiri
Takanori Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2005156469 priority Critical
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to PCT/JP2006/310947 priority patent/WO2006126728A1/en
Publication of DE602006016949D1 publication Critical patent/DE602006016949D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
DE602006016949T 2005-05-27 2006-05-25 Halbleiterbauelement Active DE602006016949D1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005156469 2005-05-27
PCT/JP2006/310947 WO2006126728A1 (en) 2005-05-27 2006-05-25 Semiconductor device

Publications (1)

Publication Number Publication Date
DE602006016949D1 true DE602006016949D1 (de) 2010-10-28

Family

ID=37452138

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006016949T Active DE602006016949D1 (de) 2005-05-27 2006-05-25 Halbleiterbauelement

Country Status (5)

Country Link
US (1) US7978787B2 (de)
EP (1) EP1907992B1 (de)
CN (2) CN101194276B (de)
DE (1) DE602006016949D1 (de)
WO (1) WO2006126728A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198936B2 (en) * 2009-04-16 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8928466B2 (en) * 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN109585463B (zh) * 2014-08-22 2021-01-15 群创光电股份有限公司 显示面板的阵列基板
TWI563640B (en) 2014-08-22 2016-12-21 Innolux Corp Array substrate of display panel
USD863268S1 (en) 2018-05-04 2019-10-15 Scott R. Archer Yagi-uda antenna with triangle loop

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959872A (en) 1988-06-23 1990-09-25 Kabushiki Kaisha Toshiba Automatic frequency control apparatus for FM receivers
JPH04268818A (en) 1991-02-22 1992-09-24 Nec Corp Level shift circuit
JPH0729649A (ja) 1993-07-12 1995-01-31 Kel Corp バットジョイントコネクタ
JP2577157Y2 (ja) * 1993-10-26 1998-07-23 シチズン時計株式会社 デ−タキャリア
JP3152867B2 (ja) * 1995-08-25 2001-04-03 株式会社東芝 レベルシフト半導体装置
JP2000269436A (ja) 1999-03-19 2000-09-29 Seiko Epson Corp 半導体装置及びそれを用いた電子機器
US6659352B1 (en) 1999-06-02 2003-12-09 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit, a contactless information medium having the semiconductor integrated circuit, and a method of driving the semiconductor integrated circuit
JP3425118B2 (ja) 1999-06-02 2003-07-07 松下電器産業株式会社 半導体集積回路、当該半導体集積回路を搭載した非接触型情報媒体、及び半導体集積回路の駆動方法
WO2001092970A1 (en) 2000-05-30 2001-12-06 Seiko Epson Corporation Hand-held electronic device
JP3835123B2 (ja) 2000-05-30 2006-10-18 セイコーエプソン株式会社 携帯型電子機器
JP4048232B2 (ja) 2000-12-27 2008-02-20 三洋電機株式会社 レベルシフト回路
JP4822588B2 (ja) 2001-02-08 2011-11-24 富士通セミコンダクター株式会社 情報処理装置および情報処理デバイス
JP3784271B2 (ja) 2001-04-19 2006-06-07 松下電器産業株式会社 半導体集積回路とこれを搭載した非接触型情報媒体
JP3696157B2 (ja) 2001-12-19 2005-09-14 株式会社東芝 レベルシフト回路
US7699232B2 (en) * 2004-02-06 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7663473B2 (en) * 2004-02-12 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes
EP1696368B1 (de) 2005-02-28 2011-11-16 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und Ansteuerverfahren dafür

Also Published As

Publication number Publication date
CN101194276A (zh) 2008-06-04
CN101194276B (zh) 2012-05-30
CN102750565B (zh) 2015-07-01
EP1907992B1 (de) 2010-09-15
US7978787B2 (en) 2011-07-12
EP1907992A4 (de) 2009-09-02
CN102750565A (zh) 2012-10-24
US20090085638A1 (en) 2009-04-02
EP1907992A1 (de) 2008-04-09
WO2006126728A1 (en) 2006-11-30

Similar Documents

Publication Publication Date Title
NO2017044I1 (no) iksekizumab
DE602006010726D1 (de) E geräte
DE602006019639D1 (de) Nichtflüchtige halbleiterspeicheranordnung
DE602006009675D1 (de) N dafür
AT390355T (de) Mehrzweckkartoniermaschine
DK1943406T3 (da) Byggeelement
DE112005003586A5 (de) Bohrfutter
AT390871T (de) Taschensfederkernmatratze
AT555495T (de) Dreh chipanbringung
DE502006000019D1 (de) Integrieter Schaltkreis
AT385919T (de) Luftdüse
AT434815T (de) Spanneinrichtung
DE602005012797D1 (de) Halbleiterelement
AT444132T (de) Spannfutter
AT402489T (de) Halbleiterstruktur
AT502397T (de) Halbleiterbauelement
DE602005021554D1 (de) Integrierte halbleiterschaltung
SE0400476L (sv) Komponent
DE502006005207D1 (de) Bauteilen
DE602006005363D1 (de) Nd chlorat
DE602005008550D1 (de) Halbleiterspeicher
DK1896328T3 (da) Højkompressions-ballepresser
FI20051236A0 (fi) Puolijohde apparaatti
AT361869T (de) Deichselgeführtes flurförderzeug
DE602006016949D1 (de) Halbleiterbauelement