DE602006016949D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE602006016949D1
DE602006016949D1 DE602006016949T DE602006016949T DE602006016949D1 DE 602006016949 D1 DE602006016949 D1 DE 602006016949D1 DE 602006016949 T DE602006016949 T DE 602006016949T DE 602006016949 T DE602006016949 T DE 602006016949T DE 602006016949 D1 DE602006016949 D1 DE 602006016949D1
Authority
DE
Germany
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006016949T
Other languages
English (en)
Inventor
Yutaka Shionoiri
Takanori Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE602006016949D1 publication Critical patent/DE602006016949D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE602006016949T 2005-05-27 2006-05-25 Halbleiterbauelement Active DE602006016949D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005156469 2005-05-27
PCT/JP2006/310947 WO2006126728A1 (en) 2005-05-27 2006-05-25 Semiconductor device

Publications (1)

Publication Number Publication Date
DE602006016949D1 true DE602006016949D1 (de) 2010-10-28

Family

ID=37452138

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006016949T Active DE602006016949D1 (de) 2005-05-27 2006-05-25 Halbleiterbauelement

Country Status (5)

Country Link
US (1) US7978787B2 (de)
EP (1) EP1907992B1 (de)
CN (2) CN101194276B (de)
DE (1) DE602006016949D1 (de)
WO (1) WO2006126728A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198936B2 (en) * 2009-04-16 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8928466B2 (en) * 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI563640B (en) * 2014-08-22 2016-12-21 Innolux Corp Array substrate of display panel
CN109585463B (zh) * 2014-08-22 2021-01-15 群创光电股份有限公司 显示面板的阵列基板
USD863268S1 (en) 2018-05-04 2019-10-15 Scott R. Archer Yagi-uda antenna with triangle loop

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959872A (en) 1988-06-23 1990-09-25 Kabushiki Kaisha Toshiba Automatic frequency control apparatus for FM receivers
JPH04268818A (ja) * 1991-02-22 1992-09-24 Nec Corp レベルシフト回路
JPH0729649A (ja) 1993-07-12 1995-01-31 Kel Corp バットジョイントコネクタ
JP2577157Y2 (ja) * 1993-10-26 1998-07-23 シチズン時計株式会社 デ−タキャリア
JP3152867B2 (ja) * 1995-08-25 2001-04-03 株式会社東芝 レベルシフト半導体装置
JP2000269436A (ja) 1999-03-19 2000-09-29 Seiko Epson Corp 半導体装置及びそれを用いた電子機器
JP3425118B2 (ja) 1999-06-02 2003-07-07 松下電器産業株式会社 半導体集積回路、当該半導体集積回路を搭載した非接触型情報媒体、及び半導体集積回路の駆動方法
US6659352B1 (en) 1999-06-02 2003-12-09 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit, a contactless information medium having the semiconductor integrated circuit, and a method of driving the semiconductor integrated circuit
JP3835123B2 (ja) 2000-05-30 2006-10-18 セイコーエプソン株式会社 携帯型電子機器
CN1232890C (zh) 2000-05-30 2005-12-21 精工爱普生株式会社 袖珍电子设备
JP4048232B2 (ja) * 2000-12-27 2008-02-20 三洋電機株式会社 レベルシフト回路
JP4822588B2 (ja) 2001-02-08 2011-11-24 富士通セミコンダクター株式会社 情報処理装置および情報処理デバイス
JP3784271B2 (ja) 2001-04-19 2006-06-07 松下電器産業株式会社 半導体集積回路とこれを搭載した非接触型情報媒体
JP3696157B2 (ja) 2001-12-19 2005-09-14 株式会社東芝 レベルシフト回路
US7699232B2 (en) * 2004-02-06 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7663473B2 (en) * 2004-02-12 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes
EP1696368B1 (de) 2005-02-28 2011-11-16 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und Ansteuerverfahren dafür

Also Published As

Publication number Publication date
EP1907992B1 (de) 2010-09-15
CN102750565B (zh) 2015-07-01
CN101194276B (zh) 2012-05-30
CN101194276A (zh) 2008-06-04
CN102750565A (zh) 2012-10-24
US7978787B2 (en) 2011-07-12
EP1907992A1 (de) 2008-04-09
EP1907992A4 (de) 2009-09-02
US20090085638A1 (en) 2009-04-02
WO2006126728A1 (en) 2006-11-30

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