EP1041650A3 - Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung - Google Patents
Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung Download PDFInfo
- Publication number
- EP1041650A3 EP1041650A3 EP00105048A EP00105048A EP1041650A3 EP 1041650 A3 EP1041650 A3 EP 1041650A3 EP 00105048 A EP00105048 A EP 00105048A EP 00105048 A EP00105048 A EP 00105048A EP 1041650 A3 EP1041650 A3 EP 1041650A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- emitting device
- semiconductor light
- compound semiconductor
- group iii
- iii nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- -1 nitride compound Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9071899 | 1999-03-31 | ||
JP9071899A JP3567790B2 (ja) | 1999-03-31 | 1999-03-31 | Iii族窒化物系化合物半導体発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1041650A2 EP1041650A2 (de) | 2000-10-04 |
EP1041650A3 true EP1041650A3 (de) | 2001-10-10 |
EP1041650B1 EP1041650B1 (de) | 2007-05-16 |
Family
ID=14006337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00105048A Expired - Lifetime EP1041650B1 (de) | 1999-03-31 | 2000-03-09 | Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung |
Country Status (4)
Country | Link |
---|---|
US (2) | US6452214B2 (de) |
EP (1) | EP1041650B1 (de) |
JP (1) | JP3567790B2 (de) |
DE (1) | DE60034841T2 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6936859B1 (en) * | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
US6657300B2 (en) | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
JP3567790B2 (ja) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
JP3889933B2 (ja) * | 2001-03-02 | 2007-03-07 | シャープ株式会社 | 半導体発光装置 |
ATE448589T1 (de) * | 2001-04-12 | 2009-11-15 | Nichia Corp | Halbleiterelement aus galliumnitridzusammensetzung |
US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
JP3812366B2 (ja) * | 2001-06-04 | 2006-08-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子の製造方法 |
EP1453160B1 (de) | 2001-11-05 | 2008-02-27 | Nichia Corporation | Halbleiterelement |
JP2003163373A (ja) * | 2001-11-26 | 2003-06-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
KR100497890B1 (ko) * | 2002-08-19 | 2005-06-29 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
JP4143732B2 (ja) | 2002-10-16 | 2008-09-03 | スタンレー電気株式会社 | 車載用波長変換素子 |
JP4292925B2 (ja) * | 2003-09-16 | 2009-07-08 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
JP3979378B2 (ja) * | 2003-11-06 | 2007-09-19 | 住友電気工業株式会社 | 半導体発光素子 |
KR20050051920A (ko) * | 2003-11-28 | 2005-06-02 | 삼성전자주식회사 | 플립칩형 질화물계 발광소자 및 그 제조방법 |
JP2005244207A (ja) * | 2004-01-30 | 2005-09-08 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP4896024B2 (ja) * | 2004-08-25 | 2012-03-14 | オムノバ ソリューソンズ インコーポレーティッド | 凝集中空粒子ラテックスを使用した紙の製造 |
US7291865B2 (en) * | 2004-09-29 | 2007-11-06 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device |
JP5138873B2 (ja) | 2005-05-19 | 2013-02-06 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US7731693B2 (en) * | 2005-10-27 | 2010-06-08 | Cook Incorporated | Coupling wire guide |
KR20080106402A (ko) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Led로부터 광을 유도하기 위한 개별 광학 디바이스 |
KR20070102114A (ko) * | 2006-04-14 | 2007-10-18 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
EP2070123A2 (de) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led-system und -verfahren |
JP4191227B2 (ja) * | 2007-02-21 | 2008-12-03 | 昭和電工株式会社 | Iii族窒化物半導体発光素子の製造方法及びiii族窒化物半導体発光素子並びにランプ |
JP4962130B2 (ja) * | 2007-04-04 | 2012-06-27 | 三菱化学株式会社 | GaN系半導体発光ダイオードの製造方法 |
KR20100122485A (ko) | 2008-02-08 | 2010-11-22 | 일루미텍스, 인크. | 발광체층 쉐이핑을 위한 시스템 및 방법 |
TWI475717B (zh) * | 2008-05-09 | 2015-03-01 | Advanced Optoelectronic Tech | A semiconductor element that emits radiation |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
WO2010100689A1 (ja) * | 2009-03-03 | 2010-09-10 | パナソニック株式会社 | 窒化ガリウム系化合物半導体の製造方法、および半導体発光素子 |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
US8575592B2 (en) * | 2010-02-03 | 2013-11-05 | Cree, Inc. | Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses |
KR101747349B1 (ko) * | 2011-12-07 | 2017-06-28 | 삼성전자주식회사 | 반도체 발광소자 |
TWI535055B (zh) | 2012-11-19 | 2016-05-21 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
TWI524551B (zh) | 2012-11-19 | 2016-03-01 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
TWI499080B (zh) | 2012-11-19 | 2015-09-01 | Genesis Photonics Inc | 氮化物半導體結構及半導體發光元件 |
TWI536606B (zh) * | 2013-12-25 | 2016-06-01 | 新世紀光電股份有限公司 | 發光二極體結構 |
CN104779328B (zh) * | 2014-01-13 | 2018-02-02 | 新世纪光电股份有限公司 | 发光二极管结构 |
JP6701628B2 (ja) * | 2015-05-29 | 2020-05-27 | 日亜化学工業株式会社 | 半導体装置及びその製造方法 |
JP6434878B2 (ja) * | 2015-09-10 | 2018-12-05 | 株式会社東芝 | 発光装置 |
TWI738640B (zh) * | 2016-03-08 | 2021-09-11 | 新世紀光電股份有限公司 | 半導體結構 |
TWI717386B (zh) | 2016-09-19 | 2021-02-01 | 新世紀光電股份有限公司 | 含氮半導體元件 |
KR102603411B1 (ko) | 2017-12-18 | 2023-11-16 | 엘지디스플레이 주식회사 | 마이크로led 표시장치 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
EP0716457A2 (de) * | 1994-12-02 | 1996-06-12 | Nichia Chemical Industries, Ltd. | Lichtemittierende Vorrichtung aus einer Nitridverbindung |
US5592501A (en) * | 1994-09-20 | 1997-01-07 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
JPH09219541A (ja) * | 1997-02-28 | 1997-08-19 | Toshiba Corp | 半導体発光素子 |
WO1997048138A2 (en) * | 1996-06-11 | 1997-12-18 | Philips Electronics N.V. | Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
JPH10294529A (ja) * | 1996-09-09 | 1998-11-04 | Toshiba Corp | 半導体レーザ及びその製造方法 |
US6031858A (en) * | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751752A (en) * | 1994-09-14 | 1998-05-12 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
JP3223832B2 (ja) | 1997-02-24 | 2001-10-29 | 日亜化学工業株式会社 | 窒化物半導体素子及び半導体レーザダイオード |
KR19980079320A (ko) * | 1997-03-24 | 1998-11-25 | 기다오까다까시 | 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스 |
JPH1168158A (ja) * | 1997-08-20 | 1999-03-09 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体装置 |
JP3567790B2 (ja) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
-
1999
- 1999-03-31 JP JP9071899A patent/JP3567790B2/ja not_active Expired - Fee Related
-
2000
- 2000-03-09 EP EP00105048A patent/EP1041650B1/de not_active Expired - Lifetime
- 2000-03-09 DE DE60034841T patent/DE60034841T2/de not_active Expired - Lifetime
- 2000-03-10 US US09/523,463 patent/US6452214B2/en not_active Expired - Lifetime
-
2002
- 2002-07-11 US US10/192,699 patent/US6762070B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
US5592501A (en) * | 1994-09-20 | 1997-01-07 | Cree Research, Inc. | Low-strain laser structures with group III nitride active layers |
EP0716457A2 (de) * | 1994-12-02 | 1996-06-12 | Nichia Chemical Industries, Ltd. | Lichtemittierende Vorrichtung aus einer Nitridverbindung |
WO1997048138A2 (en) * | 1996-06-11 | 1997-12-18 | Philips Electronics N.V. | Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices |
JPH10294529A (ja) * | 1996-09-09 | 1998-11-04 | Toshiba Corp | 半導体レーザ及びその製造方法 |
US6031858A (en) * | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
JPH09219541A (ja) * | 1997-02-28 | 1997-08-19 | Toshiba Corp | 半導体発光素子 |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 12 25 December 1997 (1997-12-25) * |
Also Published As
Publication number | Publication date |
---|---|
JP2000286447A (ja) | 2000-10-13 |
US6762070B2 (en) | 2004-07-13 |
DE60034841T2 (de) | 2008-02-07 |
JP3567790B2 (ja) | 2004-09-22 |
DE60034841D1 (de) | 2007-06-28 |
US6452214B2 (en) | 2002-09-17 |
EP1041650B1 (de) | 2007-05-16 |
EP1041650A2 (de) | 2000-10-04 |
US20020175332A1 (en) | 2002-11-28 |
US20020014632A1 (en) | 2002-02-07 |
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