CN1519924A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN1519924A CN1519924A CNA031577210A CN03157721A CN1519924A CN 1519924 A CN1519924 A CN 1519924A CN A031577210 A CNA031577210 A CN A031577210A CN 03157721 A CN03157721 A CN 03157721A CN 1519924 A CN1519924 A CN 1519924A
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- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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Abstract
Description
Claims (29)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2003026526 | 2003-02-03 | ||
JP026526/2003 | 2003-02-03 | ||
JP2003113412A JP4502173B2 (ja) | 2003-02-03 | 2003-04-17 | 半導体装置及びその製造方法 |
JP113412/2003 | 2003-04-17 |
Publications (2)
Publication Number | Publication Date |
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CN1519924A true CN1519924A (zh) | 2004-08-11 |
CN100355067C CN100355067C (zh) | 2007-12-12 |
Family
ID=32658622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031577210A Expired - Fee Related CN100355067C (zh) | 2003-02-03 | 2003-08-29 | 半导体器件 |
Country Status (4)
Country | Link |
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US (1) | US6998712B2 (zh) |
EP (1) | EP1443557A2 (zh) |
JP (1) | JP4502173B2 (zh) |
CN (1) | CN100355067C (zh) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7550850B2 (en) | 2004-11-16 | 2009-06-23 | Nec Electronics Corporation | Semiconductor device |
CN100539087C (zh) * | 2005-07-21 | 2009-09-09 | 恩益禧电子股份有限公司 | 半导体器件 |
CN100559578C (zh) * | 2004-09-10 | 2009-11-11 | 株式会社瑞萨科技 | 半导体器件 |
CN101286483B (zh) * | 2007-04-10 | 2010-06-02 | 台湾积体电路制造股份有限公司 | 半导体芯片及集成电路结构 |
CN102130049A (zh) * | 2009-12-28 | 2011-07-20 | 瑞萨电子株式会社 | 半导体器件的制造方法以及半导体器件 |
CN102171821A (zh) * | 2011-04-19 | 2011-08-31 | 华为技术有限公司 | 焊盘的防水结构、防水焊盘和形成该防水结构的方法 |
CN101339924B (zh) * | 2007-07-04 | 2012-04-04 | 冲电气工业株式会社 | 半导体器件 |
CN103094221A (zh) * | 2008-10-03 | 2013-05-08 | 高通股份有限公司 | 具有其中有间隙的双密封环的集成电路 |
CN103811471A (zh) * | 2012-09-07 | 2014-05-21 | 联发科技(新加坡)私人有限公司 | 保护环结构及其制造方法 |
CN104350586A (zh) * | 2012-06-15 | 2015-02-11 | 精工电子有限公司 | 半导体装置 |
CN104934407A (zh) * | 2011-09-15 | 2015-09-23 | 富士通半导体股份有限公司 | 半导体器件、半导体晶片及半导体器件的制造方法 |
CN105321913A (zh) * | 2014-05-30 | 2016-02-10 | 台湾积体电路制造股份有限公司 | 器件管芯中的环形件结构 |
CN106601693A (zh) * | 2015-10-15 | 2017-04-26 | 中芯国际集成电路制造(上海)有限公司 | 一种密封环结构及电子装置 |
CN107591373A (zh) * | 2016-07-08 | 2018-01-16 | 中芯国际集成电路制造(上海)有限公司 | 保护环结构及其制作方法 |
CN107636815A (zh) * | 2015-05-11 | 2018-01-26 | 罗伯特·博世有限公司 | 用作腐蚀探测器的触点过孔链 |
CN107799485A (zh) * | 2016-09-07 | 2018-03-13 | 德州仪器公司 | 用于刻划密封结构的方法及设备 |
TWI664702B (zh) * | 2017-02-16 | 2019-07-01 | 新加坡商格羅方德半導體私人有限公司 | 用於晶圓級封裝之密封環 |
CN110648976A (zh) * | 2018-06-27 | 2020-01-03 | 三星电子株式会社 | 半导体器件和制造其的方法 |
CN111370368B (zh) * | 2020-03-06 | 2021-04-13 | 长江存储科技有限责任公司 | 一种半导体芯片密封环及其制造方法 |
CN112713136A (zh) * | 2019-10-25 | 2021-04-27 | 南亚科技股份有限公司 | 半导体结构 |
CN114121987A (zh) * | 2020-08-28 | 2022-03-01 | 爱思开海力士有限公司 | 半导体装置 |
Families Citing this family (344)
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---|---|---|---|---|
US7067385B2 (en) * | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
US7125781B2 (en) * | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
JP2005129717A (ja) * | 2003-10-23 | 2005-05-19 | Renesas Technology Corp | 半導体装置 |
JP2005136215A (ja) * | 2003-10-30 | 2005-05-26 | Toshiba Corp | 半導体装置 |
CN1617312A (zh) | 2003-11-10 | 2005-05-18 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
TWI227936B (en) * | 2004-01-14 | 2005-02-11 | Taiwan Semiconductor Mfg | Sealed ring for IC protection |
JP4065855B2 (ja) * | 2004-01-21 | 2008-03-26 | 株式会社日立製作所 | 生体および化学試料検査装置 |
US7223684B2 (en) * | 2004-07-14 | 2007-05-29 | International Business Machines Corporation | Dual damascene wiring and method |
US7387939B2 (en) | 2004-07-19 | 2008-06-17 | Micron Technology, Inc. | Methods of forming semiconductor structures and capacitor devices |
US9318378B2 (en) * | 2004-08-21 | 2016-04-19 | Globalfoundries Singapore Pte. Ltd. | Slot designs in wide metal lines |
US7439152B2 (en) * | 2004-08-27 | 2008-10-21 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
US20060046055A1 (en) * | 2004-08-30 | 2006-03-02 | Nan Ya Plastics Corporation | Superfine fiber containing grey dope dyed component and the fabric made of the same |
US7547945B2 (en) | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
US7777338B2 (en) * | 2004-09-13 | 2010-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal ring structure for integrated circuit chips |
JP4504791B2 (ja) * | 2004-11-24 | 2010-07-14 | パナソニック株式会社 | 半導体回路装置及びその製造方法 |
US7320911B2 (en) * | 2004-12-06 | 2008-01-22 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
FR2879295B1 (fr) * | 2004-12-14 | 2007-03-16 | St Microelectronics Sa | Structure de test pour circuit electronique integre |
KR100590575B1 (ko) * | 2004-12-24 | 2006-06-19 | 삼성전자주식회사 | 새로운 물질을 이용한 전자빔 리소그래피 방법 |
GB2422245A (en) * | 2005-01-12 | 2006-07-19 | Hewlett Packard Development Co | Semiconductor device and fabrication thereof |
JP2006196668A (ja) * | 2005-01-13 | 2006-07-27 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4455356B2 (ja) | 2005-01-28 | 2010-04-21 | Necエレクトロニクス株式会社 | 半導体装置 |
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US20040150070A1 (en) | 2004-08-05 |
EP1443557A2 (en) | 2004-08-04 |
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US6998712B2 (en) | 2006-02-14 |
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