TWI664702B - 用於晶圓級封裝之密封環 - Google Patents

用於晶圓級封裝之密封環 Download PDF

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TWI664702B
TWI664702B TW106133373A TW106133373A TWI664702B TW I664702 B TWI664702 B TW I664702B TW 106133373 A TW106133373 A TW 106133373A TW 106133373 A TW106133373 A TW 106133373A TW I664702 B TWI664702 B TW I664702B
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seal ring
rdl
die
semiconductor device
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順強 龔
元文 陳
山 高
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新加坡商格羅方德半導體私人有限公司
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Abstract

揭示裝置及用於形成裝置的方法。提供至少一晶粒。具有扇出區域的重佈線層從該至少一晶粒的外周緣同心地向外延伸。密封環設置在該重佈線層的該扇出區域中。

Description

用於晶圓級封裝之密封環
本發明係關於晶圓級封裝之技術。
晶圓級封裝(WLP)為在晶圓級積體電路(IC)的封裝技術，這產生實質具有晶粒尺寸的裝置。傳統WLP技術包括扇入WLP(Fan-In WLP；FIWLP)技術，其在晶片邊緣形成接觸墊的密集周邊陣列且添加重佈線層(RDL)以路由連接/電路跡線至較不密集的面積陣列(area array)。不過，由於輸入/輸出(I/O)的組態受限於晶粒表面，FIWLP封裝受限於低端半導體裝置，例如，需要少於300個I/O的裝置。
扇出WLP(Fan-Out WLP；FOWLP)技術，例如嵌入式晶圓級球柵陣列(eWLB)為一種增強版FIWLP技術，其提供需要更多I/O個數及更高整合程度之半導體裝置的解決方案。例如，FOWLP技術選擇預切的已知良品晶粒(KGD)，使用環氧樹脂模塑料(EMC)重組該等KGD於晶圓或面板中用以提供額外空間供互連用且增加具有一介電層及數個銅互連的扇出重佈線層(RDL)。可在封裝上實現有任意距離的任意多個附加互連(亦即，扇出設計)，而不 是FIWLP，在此晶片面積會不足以適當的距離安置所需個數的互連。
為了滿足半導體裝置的電氣效能要求，使用低k或超低k介電材料和銅互連來構造RDL。不過，此一材料選擇免不了使封裝的機械強度劣化，而產生晶片封裝互動(CPI)可靠性問題。CPI可靠性問題的例子包括起於晶粒角落的剝離與起於切割工具把晶圓切成主動晶片區之區域的龜裂傳播。
因此，最好提供簡化且有成本效益的技術用以減輕CPI可靠性問題。
數個具體實施例大體有關於半導體裝置與形成半導體裝置的方法。在一具體實施例中，提出一種半導體裝置。該半導體裝置包括至少一晶粒。具有扇出區域的重佈線層從該至少一晶粒的外周緣同心地向外延伸。密封環設置在該重佈線層的扇出區域中。
在一具體實施例中，揭示一種裝置。該裝置包括具有一第一面及相對之一第二面的一模塑料。至少一晶粒嵌入在該模塑料中。該晶粒的一主動面在該模塑料之該第二面上暴露。重佈線層(RDL)設置在該模塑料的第二面上。該RDL具有從該至少一晶粒之數個外緣同心地向外延伸的一扇出區域。密封環設置在該RDL的扇出區域中。
在另一具體實施例中，揭示一種形成裝置 之方法。該方法包括形成嵌入至少一晶粒的一模塑料。該模塑料包括第一表面及相對之第二表面。在該模塑料的第二表面上面形成具有主要區域及扇出區域的重佈線層(RDL)。該扇出區域從該至少一晶粒的數個外緣同心地向外延伸且包圍該主要區域。形成該RDL包括同時形成在該主要區域的數個RDL互連及在該扇出區域中的一密封環。
通過參考以下說明及圖式可明白揭示於本文之具體實施例的以上及其他優點及特徵。此外，應瞭解，描述於本文之各種具體實施例的特徵彼此不互斥而且可存在於各種組合及排列中。
100‧‧‧簡化上視圖、半導體裝置、裝置
101‧‧‧半導體裝置、裝置
110‧‧‧主要裝置區
120‧‧‧周緣區域、周緣區
150‧‧‧密封環
150a‧‧‧第一密封環、內密封環
150b‧‧‧第二密封環、外密封環
200‧‧‧簡化橫截面圖
202‧‧‧晶粒
204‧‧‧模塑料
220‧‧‧重佈線層、RDL、RDL層
220a‧‧‧扇出區域
221a‧‧‧最上面RDL層級
221b‧‧‧最下面RDL層級
222‧‧‧RDL介電層
224‧‧‧RDL通孔層級
225‧‧‧RDL線路層級
230‧‧‧接觸
300‧‧‧具體實施例
350a‧‧‧內密封環
350b‧‧‧外密封環
400‧‧‧示範橫截面圖
418a、418c‧‧‧溝槽
419a、419c‧‧‧通孔
450‧‧‧墊層
453a‧‧‧連續金屬結構、最外面金屬結構
453b‧‧‧連續金屬結構
453c‧‧‧連續金屬結構、最裡面金屬結構
460‧‧‧鈍化層
圖式中，類似的元件大體用相同的元件符號表示於各處不同視圖。再者，圖式不一定按比例繪製，反而在圖解說明本揭示內容之原理時大體加以強調。下文在描述本揭示內容的各種具體實施例時會參考以下圖式，其中：第1圖顯示具有密封環的嵌入式晶圓級球柵陣列(eWLB)封裝的示範平面圖；第2圖顯示eWLB封裝的示範橫截面圖；第3圖顯示半導體裝置的另一示範平面圖；以及第4圖顯示密封環的示範橫截面圖。
數個具體實施例大體有關於數種半導體封 裝。更特別的是，數個具體實施例係關於形成環繞扇出WLP(FOWLP)(例如，嵌入式晶圓級球柵陣列(eWLB)封裝)之半導體晶粒之周邊的密封環。該等半導體封裝可併入，例如，消費者電子產品，例如電腦、手機及個人數位助理(PDA)。其他應用併入該等半導體封裝也可能很有用。
第1圖為半導體裝置101的簡化上視圖100。該上視圖省略用以嵌入晶粒的模塑料。在一具體實施例中，該裝置為晶圓級封裝(WLP)。例如，該WLP為扇出WLP(FOWLP)，例如eWLB。半導體裝置100包括主要裝置區110(亦即，在點狀方形內)與外框或周緣區域120(亦即，在點狀方形與外周緣之間)。該主要裝置區包括一或更多晶粒、特徵及晶粒的互連。至於該周緣區域，其係包圍該主要裝置區。例如，該周緣區域在晶圓上用作分離相鄰裝置的切割道(dicing channel)。該等裝置的切單係藉由沿著切割道切割晶圓。
第2圖為半導體裝置101的對應簡化橫截面圖200。如圖示，該主要裝置區包括嵌入在模塑料204中的晶粒(或晶片)202。該晶粒可為射頻(RF)積體電路(IC)，記憶體IC或其他類型的IC。儘管只圖示一個晶粒，然而該封裝可包括並排安置或垂直堆疊而形成高密度FOWLP(HD-FOWLP)的多個晶粒/晶片。
裝置101包括墊層(未圖示)。該墊層可包括面向晶粒主動面的第一表面與面向重佈線層(RDL)220的第二表面。該墊層可為介電層且包括複數個傳導柱。每個 傳導柱可耦合至設置在晶粒的主動面上的接觸墊。例如，該傳導柱可為鋁或銅。在一具體實施例中，在晶粒的主動面與上接觸層的第一部份之間可提供傳導阻障層(未圖示)，例如鉭層。例如TaN、Ti或TiN層的其他傳導阻障層也可能很有用。
RDL 220包括複數個RDL層級。RDL層級的數量可取決於，例如，設計要求。例如，RDL層級包括具有RDL通孔層級(RDL via level)224及RDL線路層級(RDL line level)225的RDL介電層222。RDL介電層222可包括氧化矽或氮化矽。其他合適類型的介電材料也可能很有用。RDL層級的線路層級可稱為Mi，在此i為1至x且為x個RDL層級中的第i個RDL層級。RDL層級的通孔層級稱為Vi-1，在此i為x個RDL層級中的第i個RDL層級且CA常被表示為第一通孔層級。提供例如接觸的互連用於RDL通孔層級224且提供導線用於RDL線路層級225。該等接觸及導線例如為用鑲嵌或雙鑲嵌技術形成的銅接觸及導線。用於形成例如銅接觸及導線之互連或RDL層級之組態的其他合適技術也可能很有用。最上面RDL層級221a的互連都連接至傳導柱(柱體)，同時最下面RDL層級221b的互連都經由鋁墊連接至接觸230，例如銲錫凸塊。可在該RDL與接觸之間提供鈍化層(未圖示)。
在一具體實施例中，RDL層220經組配成可延伸到晶粒202的外緣之外。例如，RDL層220包括從晶粒202之外周緣同心地向外延伸的扇出區域220a。對於 有一個以上並排排列之晶粒的高密度扇出(HD-FO)裝置，該扇出區域從最外面晶粒之外緣同心地向外延伸。如第2圖所示，扇出區域220a提供允許在晶粒周緣外重新路由銅互連及焊球的額外重新路由區(re-routing area)。
在裝置100的周緣區120中設置密封環150。在一具體實施例中，密封環150設置在晶粒邊緣與鋸縫(saw kerf)之間的RDL 220的扇出區域220a中。如第1圖所示，密封環150包圍主要裝置區110且與晶粒的外周緣平行。在一具體實施例中，該密封環包括一對密封環，亦即，第一密封環150a與第二密封環150b。例如，平行地配置這一對密封環。第一密封環150a為內密封環而第二密封環150b為外密封環。內密封環150a設置在晶粒220及外密封環150b之間。在一具體實施例中，內密封環150a為與晶粒周緣平行的直線，除了轉角區以外。外密封環150b貼近鋸縫。外密封環與鋸縫的距離約為1微米。如第1圖所示，內密封環150a經組配成有斜角或倒角(chamfered corner)而不是有尖角的晶粒，例如，90度轉角。外密封環150b為與包括尖角之晶粒周緣平行的直線。在如第3圖所示的另一具體實施例300中，外密封環350b的組配方式與內密封環350a相同。例如，提供用於外密封環350b的斜角或倒角，致使外密封環350b為與內密封環350a平行的直線。提供具有其他組態的密封環可能也很有用。在一具體實施例中，該密封環(亦即，內密封環)與晶粒邊緣的距離取決於製程公差(process tolerance)，亦即，組件隔離 (assembly isolation)。該組件隔離確保密封環不干涉晶粒邊緣。例如，該距離約為1至2微米。
例如，該密封環包括用通孔連接而形成連續金屬結構的數個溝槽。在一具體實施例中，該密封環可包括平行設置的複數個連續金屬結構。第4圖顯示設置在墊層450與鈍化層460之間的密封環150之內密封環150a的示範橫截面圖400。如圖示，內密封環150a包括平行設置的3個連續金屬結構(453a-c)。最裡面金屬結構453c貼近晶粒邊緣，而最外面金屬結構453a貼近外密封環。在一具體實施例中，最外面金屬結構453a的相鄰溝槽418a用通孔419a連接，而最裡面金屬結構453c的相鄰溝槽418c用複數個通孔419c連接。設置在最外面及最裡面金屬結構之間的金屬結構可具有最外面或者是最裡面金屬結構的組態。在一具體實施例中，密封環150的外密封環可具有與第4圖之內密封環相同的組態。替換地，外密封環可具有與內密封環不同的組態，例如有3個以下或以上的金屬結構。
在一具體實施例中，該等金屬結構有相同數量的金屬層級。該等金屬結構的金屬層級的數量對應至RDL層級的數量。例如，該等金屬結構的通孔設置在RDL通孔層級中且該等金屬結構的溝槽設置在RDL線路層級中。該等金屬結構由設置在RDL中之互連的導電材料形成。例如，在同一個RDL層級中的金屬結構及互連在使用鑲嵌或雙鑲嵌技術的同一個製程中同時形成。鑲嵌技術包 括在RDL介電層中形成填滿導電材料的開口。用例如研磨法移除多餘的導電材料。這在通孔或線路層級中形成通孔或溝槽。雙鑲嵌技術包括在RDL介電層中形成對應至通孔開口的開口與對應至溝槽的開口，這些開口都填滿導電材料。用例如研磨法移除多餘的導電材料。這是在單一製程中形成通孔及溝槽。
在一具體實施例中，第2圖的密封環150與晶粒202耦合至相同的接地。例如，內密封環、外密封環及晶粒耦合至相同的接地。如果半導體裝置101有一個以上的晶粒，則所有晶粒耦合至與密封環相同的接地。在一具體實施例中，提供用於晶粒202的晶粒密封件(未圖示)。例如，該晶粒密封件設置在包圍晶粒之功能區的晶粒周邊區。該等晶粒密封件為保護結構，其係保護在晶粒內的內部電路以免晶粒在從晶圓切出或鋸出時受損。該晶粒密封件通常由金屬線路及連接用傳導通孔形成。在一具體實施例中，晶粒密封件、密封環及晶粒耦合至相同的接地。密封環與晶粒如此接地對於排盡在連結各種部件(例如，黏合晶粒)期間所發生的離子污染是重要的，從而防止射頻干涉。
可使用本技藝習知的RDL先製方法(RDL-first method)或者是晶片先製方法(chip-first method)製成如第2圖所示的半導體裝置101。RDL先製方法通常以施塗脫模層(release layer)於載具上開始，形成包括密封環的RDL層於脫模層上面，組裝數個晶粒(或晶片)於RDL 層的第一面上，用環氧樹脂模塑料重組該等晶粒以形成一晶圓，使載具從晶圓脫模，在RDL層的第二面上形成銲錫凸塊，以及最後切單晶圓以形成個別半導體封裝(裝置)。另一方面，晶片先製方法通常以施塗熱脫模層(thermal release layer)於載具上開始，組裝數個晶粒於載具上，用環氧樹脂模塑料重組該等晶粒以形成一晶圓，使晶圓從載具脫模，形成有在晶粒主動面上面之第一面的RDL層，該RDL層包括密封環，形成銲錫凸塊於RDL層的第二面上，以及最後切單晶圓以形成個別半導體封裝(裝置)。
不論製造方法為何，如在說明第1圖至第4圖時所述的密封環可與RDL互連在形成RDL層期間同時形成而不需任何額外製程步驟或微影光罩層。因此，所述的裝置不招致額外製程步驟，此製造方法高度相容且可與現有製程整合。此外，不需要提供用於收納密封環的額外空間，因為密封環設置在裝置的扇出區域中。存在包封晶粒區的密封環防止在切單製程期間龜裂傳播及邊緣層離，從而消除晶片封裝互動(CPI)可靠性問題。
具體實施例可用其他特定形式體現而不脫離彼等的精神或本質特性。因此，前述具體實施例在各方面都應被視為僅供圖解說明而不是限定描述於本文的本發明。因此，本發明的範疇是用隨附申請專利範圍陳明，而不是以上的描述，且旨在涵蓋落在申請專利範圍之意義及等效範圍內的所有改變。

Claims (18)

  1. 一種半導體裝置，包含：至少一晶粒；一重佈線層(RDL)，包含從該至少一晶粒之一外周緣同心地向外延伸的一扇出區域；以及一密封環，設置在該RDL之該扇出區域中，其中，該至少一晶粒與該密封環耦合至相同的接地。
  2. 如申請專利範圍第1項所述之半導體裝置，其中，該至少一晶粒嵌入於一模塑料中。
  3. 如申請專利範圍第1項所述之半導體裝置，其中，該RDL包含複數個RDL層級，且其中，一RDL層級包含具有一RDL通孔層級及一RDL線路層級的一RDL介電層。
  4. 如申請專利範圍第1項所述之半導體裝置，其中，該密封環包含平行配置的一內密封環與一外密封環。
  5. 如申請專利範圍第4項所述之半導體裝置，其中，該內密封環設置在該晶粒與該外密封環之間。
  6. 如申請專利範圍第4項所述之半導體裝置，其中：該內密封環包含倒角；以及該外密封環包含尖角。
  7. 如申請專利範圍第4項所述之半導體裝置，其中，該內密封環及該外密封環包含倒角。
  8. 如申請專利範圍第4項所述之半導體裝置，其中，該內密封環包含平行配置的複數個連續金屬結構。
  9. 如申請專利範圍第8項所述之半導體裝置，其中，該內密封環包含平行配置的3個連續金屬結構，且其中，該金屬結構中之每一者包含由交替排列之溝槽及通孔組成的一堆疊。
  10. 如申請專利範圍第9項所述之半導體裝置，其中：一最外面金屬結構的相鄰溝槽用一通孔連接；以及一最裡面金屬結構的相鄰溝槽用複數個通孔連接。
  11. 如申請專利範圍第1項所述之半導體裝置，其中：該密封環包含具有複數個金屬層級的一金屬結構；該RDL包含複數個RDL層級；以及該複數個金屬層級對應至該複數個RDL層級。
  12. 如申請專利範圍第1項所述之半導體裝置，其中，該密封環與該晶粒之該外周緣平行。
  13. 一種半導體裝置，包含：一模塑料，具有一第一面及相對之一第二面；至少一晶粒，嵌入在該模塑料中，其中，該晶粒的一主動面在該模塑料之該第二面上暴露；一重佈線層(RDL)，設置在該模塑料之該第二面上，其中，該RDL包含從該至少一晶粒之外緣同心地向外延伸的一扇出區域；以及一密封環，設置在該RDL之該扇出區域中，其中，該密封環包含平行配置的一內密封環與一外密封環。
  14. 如申請專利範圍第13項所述之半導體裝置，其中，該內密封環設置在該晶粒與該外密封環之間。
  15. 如申請專利範圍第14項所述之半導體裝置，其中：該內密封環包含倒角；以及該外密封環包含尖角。
  16. 如申請專利範圍第14項所述之半導體裝置，其中，該內密封環及該外密封環包含倒角。
  17. 如申請專利範圍第13項所述之半導體裝置，其中，該內密封環包含平行配置的複數個連續金屬結構。
  18. 一種形成半導體裝置之方法，包含：形成嵌入至少一晶粒的一模塑料，該模塑料包含一第一表面及相對之一第二表面；以及在該模塑料之該第二表面上面形成具有一主要區域及一扇出區域的一重佈線層(RDL)，該扇出區域從該至少一晶粒的外緣同心地向外延伸且包圍該主要區域，其中，形成該RDL包含同時形成在該主要區域中的RDL互連及在該扇出區域中的一密封環，以及其中，該至少一晶粒與該密封環耦合至相同的接地。
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