CN103305804A - 利用受控的固体形态学的流体的基于固体前体的传送 - Google Patents
利用受控的固体形态学的流体的基于固体前体的传送 Download PDFInfo
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- CN103305804A CN103305804A CN2013101901937A CN201310190193A CN103305804A CN 103305804 A CN103305804 A CN 103305804A CN 2013101901937 A CN2013101901937 A CN 2013101901937A CN 201310190193 A CN201310190193 A CN 201310190193A CN 103305804 A CN103305804 A CN 103305804A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US84158906P | 2006-08-31 | 2006-08-31 | |
US60/841,589 | 2006-08-31 | ||
CN2007800407660A CN101542015B (zh) | 2006-08-31 | 2007-08-31 | 利用受控的固体形态学的流体的基于固体前体的传送 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007800407660A Division CN101542015B (zh) | 2006-08-31 | 2007-08-31 | 利用受控的固体形态学的流体的基于固体前体的传送 |
Publications (2)
Publication Number | Publication Date |
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CN103305804A true CN103305804A (zh) | 2013-09-18 |
CN103305804B CN103305804B (zh) | 2016-12-07 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310190193.7A Active CN103305804B (zh) | 2006-08-31 | 2007-08-31 | 利用受控的固体形态学的流体的基于固体前体的传送 |
CN2007800407660A Active CN101542015B (zh) | 2006-08-31 | 2007-08-31 | 利用受控的固体形态学的流体的基于固体前体的传送 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CN2007800407660A Active CN101542015B (zh) | 2006-08-31 | 2007-08-31 | 利用受控的固体形态学的流体的基于固体前体的传送 |
Country Status (8)
Country | Link |
---|---|
US (4) | US20080241805A1 (zh) |
EP (1) | EP2059626B1 (zh) |
JP (1) | JP5266227B2 (zh) |
KR (5) | KR20190110158A (zh) |
CN (2) | CN103305804B (zh) |
MY (1) | MY153662A (zh) |
TW (2) | TWI522488B (zh) |
WO (1) | WO2008028170A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109312452A (zh) * | 2016-06-21 | 2019-02-05 | 艾克塞利斯科技公司 | 使用固体碘化铝(AlI3)的注入制造原子铝离子及碘化铝与相关副产物的原位清洁 |
CN109972119A (zh) * | 2012-05-31 | 2019-07-05 | 恩特格里斯公司 | 基于源试剂的用于批量沉积的高物质通量流体的输送 |
CN110885970A (zh) * | 2018-09-11 | 2020-03-17 | 北京北方华创微电子装备有限公司 | 固体前驱体蒸汽的稳压和纯化装置以及ald沉积设备 |
CN111846965A (zh) * | 2019-04-26 | 2020-10-30 | 恩特格里斯公司 | 汽化容器和方法 |
CN113529053A (zh) * | 2021-09-13 | 2021-10-22 | 浙江陶特容器科技股份有限公司 | 一种用于半导体加工的固态前驱体源升华装置及方法 |
Families Citing this family (472)
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US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7300038B2 (en) | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
US8018383B1 (en) | 2010-06-08 | 2011-09-13 | Q-Track Corporation | Method and apparatus for determining location using signals-of-opportunity |
EP1949313A4 (en) | 2005-11-15 | 2010-03-31 | Bernadette Garner | METHOD FOR TRAINING NEURAL NETWORKS |
US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
US8986456B2 (en) * | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
JP5073751B2 (ja) * | 2006-10-10 | 2012-11-14 | エーエスエム アメリカ インコーポレイテッド | 前駆体送出システム |
WO2009034938A1 (ja) * | 2007-09-10 | 2009-03-19 | Ulvac, Inc. | 有機材料蒸気発生装置、成膜源、成膜装置 |
TR201902370T4 (tr) | 2007-08-31 | 2019-03-21 | 3M Innovative Properties Co | Kişisel koruma ekipmanıyla çıkartılabilir şekilde birleştirilen bileşenlerin durumlarının belirlenmesi. |
US9034105B2 (en) | 2008-01-10 | 2015-05-19 | American Air Liquide, Inc. | Solid precursor sublimator |
WO2009117440A1 (en) * | 2008-03-17 | 2009-09-24 | Applied Materials, Inc. | Heated valve manifold for ampoule |
US20090320771A1 (en) * | 2008-06-10 | 2009-12-31 | Matheson Tri-Gas | Ionic liquid mediums for holding solid phase process gas precursors |
US7759657B2 (en) | 2008-06-19 | 2010-07-20 | Axcelis Technologies, Inc. | Methods for implanting B22Hx and its ionized lower mass byproducts |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
CN102348829A (zh) * | 2009-01-16 | 2012-02-08 | 威科仪器有限公司 | 用于低温沉积钌的组合物和方法 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
SG10201401671SA (en) * | 2009-04-21 | 2014-07-30 | Applied Materials Inc | Cvd apparatus for improved film thickness non-uniformity and particle performance |
WO2010135250A2 (en) * | 2009-05-22 | 2010-11-25 | Applied Materials, Inc. | Methods for determining the quantity of precursor in an ampoule |
US8827714B2 (en) * | 2009-06-22 | 2014-09-09 | Lawrence Livermore National Secuity, LLC. | Web-based emergency response exercise management systems and methods thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
JP5328726B2 (ja) | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
KR101146982B1 (ko) | 2009-11-20 | 2012-05-22 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 및 유기 발광 디스플레이 장치 제조 방법 |
KR101174874B1 (ko) * | 2010-01-06 | 2012-08-17 | 삼성디스플레이 주식회사 | 증착 소스, 박막 증착 장치 및 유기 발광 표시 장치 제조 방법 |
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EP2059626A4 (en) | 2011-01-26 |
US8821640B2 (en) | 2014-09-02 |
TWI575101B (zh) | 2017-03-21 |
KR20130079646A (ko) | 2013-07-10 |
TW201602401A (zh) | 2016-01-16 |
JP2010502833A (ja) | 2010-01-28 |
US20170037511A1 (en) | 2017-02-09 |
US20080241805A1 (en) | 2008-10-02 |
US10895010B2 (en) | 2021-01-19 |
KR20150039222A (ko) | 2015-04-09 |
KR20160077229A (ko) | 2016-07-01 |
CN101542015A (zh) | 2009-09-23 |
US20100255198A1 (en) | 2010-10-07 |
WO2008028170A3 (en) | 2008-10-23 |
JP5266227B2 (ja) | 2013-08-21 |
EP2059626A2 (en) | 2009-05-20 |
KR20190110158A (ko) | 2019-09-27 |
KR101465810B1 (ko) | 2014-11-26 |
US20140329025A1 (en) | 2014-11-06 |
KR20090061646A (ko) | 2009-06-16 |
MY153662A (en) | 2015-03-13 |
CN101542015B (zh) | 2013-06-19 |
WO2008028170A2 (en) | 2008-03-06 |
TWI522488B (zh) | 2016-02-21 |
CN103305804B (zh) | 2016-12-07 |
EP2059626B1 (en) | 2018-10-17 |
TW200821406A (en) | 2008-05-16 |
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