WO2009034938A1 - 有機材料蒸気発生装置、成膜源、成膜装置 - Google Patents

有機材料蒸気発生装置、成膜源、成膜装置 Download PDF

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Publication number
WO2009034938A1
WO2009034938A1 PCT/JP2008/066149 JP2008066149W WO2009034938A1 WO 2009034938 A1 WO2009034938 A1 WO 2009034938A1 JP 2008066149 W JP2008066149 W JP 2008066149W WO 2009034938 A1 WO2009034938 A1 WO 2009034938A1
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WO
WIPO (PCT)
Prior art keywords
film deposition
discharger
organic
carrier gas
organic material
Prior art date
Application number
PCT/JP2008/066149
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English (en)
French (fr)
Inventor
Toshio Negishi
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to KR1020107005229A priority Critical patent/KR101132581B1/ko
Priority to CN2008801072207A priority patent/CN101803460B/zh
Priority to JP2009532169A priority patent/JP5374373B2/ja
Priority to EP08830220A priority patent/EP2187708B1/en
Publication of WO2009034938A1 publication Critical patent/WO2009034938A1/ja
Priority to US12/716,478 priority patent/US20100170444A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/246Replenishment of source material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

 成膜速度を速くしなくても均一な膜厚の薄膜を形成する。供給装置40から蒸発室20aに有機材料48を供給し、蒸発装置24の蒸発面28上で蒸発させる際に、予め設けられた加熱フィルタ32を加熱し、その中にキャリアガスを流して加熱し、蒸発室20a内に導入する。生成された有機材料蒸気とキャリアガスが混合され、混合ガスが放出装置70内に導入される。有機材料蒸気だけが放出装置70内に導入される場合は、放出装置70内で分子流が形成されてしまうが、キャリアガスによって放出装置70内の圧力が上昇しているので粘性流が形成され、混合ガスは放出装置70内に充満し、均一に放出される。有機材料は少量ずつ供給し、成膜速度が速く成りすぎないようにするとよい。
PCT/JP2008/066149 2007-02-25 2008-09-08 有機材料蒸気発生装置、成膜源、成膜装置 WO2009034938A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020107005229A KR101132581B1 (ko) 2007-09-10 2008-09-08 유기 재료 증기 발생 장치, 성막원, 성막 장치
CN2008801072207A CN101803460B (zh) 2007-09-10 2008-09-08 有机材料蒸气产生装置、成膜源、成膜装置
JP2009532169A JP5374373B2 (ja) 2007-09-10 2008-09-08 有機材料蒸気発生装置、成膜源、有機el成膜装置
EP08830220A EP2187708B1 (en) 2007-09-10 2008-09-08 Film deposition apparatus with organic-material vapor generator
US12/716,478 US20100170444A1 (en) 2007-02-25 2010-03-03 Organic material vapor generator, film forming source, and film forming apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007234441 2007-09-10
JP2007-234441 2007-09-10
JP2008-043480 2008-02-25
JP2008043480 2008-02-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/716,478 Continuation US20100170444A1 (en) 2007-02-25 2010-03-03 Organic material vapor generator, film forming source, and film forming apparatus

Publications (1)

Publication Number Publication Date
WO2009034938A1 true WO2009034938A1 (ja) 2009-03-19

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PCT/JP2008/066149 WO2009034938A1 (ja) 2007-02-25 2008-09-08 有機材料蒸気発生装置、成膜源、成膜装置

Country Status (7)

Country Link
US (1) US20100170444A1 (ja)
EP (1) EP2187708B1 (ja)
JP (1) JP5374373B2 (ja)
KR (1) KR101132581B1 (ja)
CN (1) CN101803460B (ja)
TW (1) TWI428456B (ja)
WO (1) WO2009034938A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2015101769A (ja) * 2013-11-26 2015-06-04 株式会社カネカ 蒸着装置、成膜方法及び有機el装置の製造方法

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JP5361467B2 (ja) * 2009-03-13 2013-12-04 東京エレクトロン株式会社 気化器
JP4831841B2 (ja) 2009-07-10 2011-12-07 三菱重工業株式会社 真空蒸着装置及び方法
DE102012220986B4 (de) * 2012-11-16 2015-04-02 Innovent E.V. Technologieentwicklung Dosiereinheit und ihre Verwendung
JP6078335B2 (ja) * 2012-12-27 2017-02-08 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム
CN103305794B (zh) * 2013-06-09 2016-03-02 京东方科技集团股份有限公司 一种有机镀膜装置及方法
JP7002302B2 (ja) * 2016-12-13 2022-02-10 芝浦メカトロニクス株式会社 成膜装置
CN107574423A (zh) * 2017-09-11 2018-01-12 德淮半导体有限公司 可结晶液体雾化装置及方法
US11842907B2 (en) 2020-07-08 2023-12-12 Applied Materials, Inc. Spot heating by moving a beam with horizontal rotary motion
DE102021200421A1 (de) * 2021-01-18 2022-07-21 Alethia-Group Gmbh Sprüheinheit und Verfahren zum Aufsprühen eines aus einem Festkörper gewonnenen Materials

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JPH06206796A (ja) * 1993-01-08 1994-07-26 Fujikura Ltd Cvd用原料ガスの発生装置
JPH07268634A (ja) * 1994-03-28 1995-10-17 Mitsubishi Electric Corp 液体原料用cvd装置、および液体原料を用いたcvdプロセスと、その液体原料
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JP2003525349A (ja) 2000-02-04 2003-08-26 アイクストロン、アーゲー 1つまたは多くの被膜を基板に沈積する方法および装置
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JP2004204289A (ja) 2002-12-25 2004-07-22 Sony Corp 成膜装置とその方法および表示パネルの製造装置とその方法
JP2005029885A (ja) 2003-06-19 2005-02-03 Sony Corp 薄膜形成方法および薄膜形成装置並びに半導体デバイス
JP2005158954A (ja) * 2003-11-25 2005-06-16 Ricoh Co Ltd 有機薄膜の形成方法及びその形成装置、並びに、このように形成された有機薄膜及びそれを有する有機薄膜トランジスタ
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See also references of EP2187708A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015101769A (ja) * 2013-11-26 2015-06-04 株式会社カネカ 蒸着装置、成膜方法及び有機el装置の製造方法

Also Published As

Publication number Publication date
TWI428456B (zh) 2014-03-01
CN101803460B (zh) 2012-01-25
JP5374373B2 (ja) 2013-12-25
US20100170444A1 (en) 2010-07-08
JPWO2009034938A1 (ja) 2010-12-24
TW200927964A (en) 2009-07-01
EP2187708A1 (en) 2010-05-19
EP2187708A4 (en) 2011-11-30
CN101803460A (zh) 2010-08-11
KR101132581B1 (ko) 2012-04-06
EP2187708B1 (en) 2013-01-23
KR20100051853A (ko) 2010-05-18

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