JP5568729B2 - 成膜装置および成膜方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 35
- 239000002994 raw material Substances 0.000 claims description 149
- 239000007789 gas Substances 0.000 claims description 129
- 239000012159 carrier gas Substances 0.000 claims description 118
- 238000007664 blowing Methods 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 105
- 239000000463 material Substances 0.000 claims description 63
- 230000015572 biosynthetic process Effects 0.000 claims description 58
- 230000008016 vaporization Effects 0.000 claims description 34
- 239000006185 dispersion Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000009834 vaporization Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000005401 electroluminescence Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 70
- 239000011521 glass Substances 0.000 description 36
- 238000005192 partition Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 13
- 101000833492 Homo sapiens Jouberin Proteins 0.000 description 11
- 101000651236 Homo sapiens NCK-interacting protein with SH3 domain Proteins 0.000 description 11
- 102100024407 Jouberin Human genes 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 11
- 239000012044 organic layer Substances 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 101710159752 Poly(3-hydroxyalkanoate) polymerase subunit PhaE Proteins 0.000 description 3
- 101710130262 Probable Vpr-like protein Proteins 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 101000945751 Homo sapiens Leukocyte cell-derived chemotaxin-2 Proteins 0.000 description 2
- 102100034762 Leukocyte cell-derived chemotaxin-2 Human genes 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 101000749842 Homo sapiens Leukocyte cell-derived chemotaxin 1 Proteins 0.000 description 1
- 102100040448 Leukocyte cell-derived chemotaxin 1 Human genes 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
201 原料容器部
26、27、28 成膜部
29 切替器
31 キャリアガス用配管系
331、332、333 配管系
203 蒸発部
202 隔壁
261 吹き出し容器
262 ステージ
263 ガス分散板
264 フィルタ
30 ガラス基板
Claims (12)
- 原料を単一の気化手段にて気化させ、前記気化した原料をキャリアガスで輸送して、基板上に前記気化した原料を含むキャリアガスを放出して所定材料の膜を並列的に堆積させる複数の成膜部を備え、
前記単一の気化手段から前記複数の成膜部のそれぞれへのガス流通経路が設けられ、
前記複数の成膜部のうち選択された前記成膜部に前記気化した原料を含むキャリアガスを供給する切替手段と、前記キャリアガスと同種のガスを、前記気化手段を介さずに、且つ、前記気化手段から前記成膜部へのガス流通経路の一部を介して、前記各成膜部に供給するキャリアガス供給手段をさらに含み、
前記切替手段は、前記複数の成膜部をそれぞれ個別に成膜状態及び非成膜状態に制御すると共に、
更に、前記切替手段は、前記成膜状態において前記キャリアガスによって前記原料を輸送して、前記基板上に前記所定材料の膜を堆積するように前記ガス流通経路を制御する一方、前記非成膜状態において前記キャリアガス供給手段から前記各成膜部に前記キャリアガスと同種のガスだけが供給されるように前記ガス流通経路を制御すると共に、前記成膜状態及び前記非成膜状態における前記各成膜部の圧力が一定に保たれるように制御し、前記複数の成膜部は、前記所定材料の膜を複数の基板上に並列的に堆積できることを特徴とする成膜装置。 - 請求項1において、前記複数の成膜部のそれぞれは、吹き出し容器と、該吹き出し容器内に設けられ、前記気化された原料を含むキャリアガスを分散するガス分散板と、該ガス分散板と前記基板間に設けられたフィルタまたはシャワープレートとを含み、前記吹き出し容器には供給口が設けられており、前記キャリアガスが該供給口を通して前記吹き出し容器の内部に供給されることを特徴とする成膜装置。
- 請求項1又は2において、前記気化手段は、前記原料を充填する原料容器部、当該原料容器部に前記キャリアガスを導入する配管、及び前記原料を加熱するヒータを有していることを特徴とする成膜装置。
- 請求項1〜3のいずれか一項において、前記複数の成膜部は、それぞれ、前記基板上に所定材料の膜を複数積層するためのものであり、前記基板の搬送方向と交わる方向に対を成すように並列に設けられていることを特徴とする成膜装置。
- 請求項1〜4のいずれか一項に記載の成膜装置であって、前記キャリアガスと同種のガスの流量が、前記気化した原料を含むキャリアガスの流量と実質的に等しいことを特徴とする成膜装置。
- 請求項1〜5のいずれか一項に記載の成膜装置であって、前記材料は有機エレクトロルミネッセンス素子を構成する材料であることを特徴とする成膜装置。
- 請求項1〜6のいずれか一項において、前記キャリアガス又はキャリアガスと同種のガスを多孔質のセラミックによって形成されたフィルタを介して前記基板に供給することを特徴とする成膜装置。
- 原料を単一の気化手段にて気化させ、前記気化した原料をキャリアガスで輸送して、基板上に前記気化した原料を含むキャリアガスを放出して所定材料の膜を並列的に堆積させる複数の成膜部を備え、前記所定材料の膜を並列的に成膜する成膜方法において、
前記複数の成膜部を個別選択的に成膜状態及び非成膜状態に切替制御する一方、非成膜状態にある前記成膜部には、前記キャリアガスと同種のガスだけを、前記気化手段を介さずに、且つ、前記気化手段から前記成膜部へのガス流通経路の一部を介して、前記成膜部に供給すると共に、前記成膜状態及び前記非成膜状態における前記各成膜部の圧力を一定に保つことにより、
前記所定材料の膜を複数の基板上に並列的に堆積することを特徴とする成膜方法。 - 請求項8に記載の成膜方法であって、前記複数の成膜部のそれぞれは、吹き出し容器を有し、当該吹き出し容器には複数の供給口と、当該複数の供給口のそれぞれに対応したガス分散板とを設け、前記供給口を通して前記吹き出し容器の内部に吹き出された前記キャリアガスを前記ガス分散板で分散した後、フィルタまたはシャワープレートを介して前記基板に放出することを特徴とする成膜方法。
- 請求項9に記載の成膜方法であって、前記キャリアガスと同種のガスの流量が、前記気化した原料を含むキャリアガスの流量と実質的に等しくしたことを特徴とする成膜方法。
- 請求項8〜10のいずれか一項に記載の成膜方法であって、前記複数の成膜部のそれぞれに異なる基板を異なるタイミングで供給することを特徴とする成膜方法。
- 請求項8〜11のいずれか一項において、前記キャリアガスまたは同種のガスを多孔質のセラミックによって形成されたフィルタを介して前記基板に供給することを特徴とする成膜方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005258043A JP5568729B2 (ja) | 2005-09-06 | 2005-09-06 | 成膜装置および成膜方法 |
PCT/JP2006/317499 WO2007029671A1 (ja) | 2005-09-06 | 2006-09-05 | 成膜装置、成膜装置系、成膜方法、及び電子装置または有機エレクトロルミネッセンス素子の製造方法 |
KR1020087008125A KR100990060B1 (ko) | 2005-09-06 | 2006-09-05 | 성막 장치, 성막 장치계, 성막 방법, 및 전자 장치 또는유기 일렉트로루미네선스 소자의 제조 방법 |
CNA2006800325149A CN101258261A (zh) | 2005-09-06 | 2006-09-05 | 成膜装置、成膜装置系统、成膜方法、以及电子设备或有机电致发光元件的制造方法 |
US11/991,475 US8383194B2 (en) | 2005-09-06 | 2006-09-05 | Film forming apparatus, film forming system, film forming method, and method of manufacturing electronic device or organic electroluminescence element |
EP06783187.5A EP1932937B1 (en) | 2005-09-06 | 2006-09-05 | Film forming apparatus, film forming system, film forming method, and method for manufacturing electronic device or organic electroluminescence element |
TW095132869A TWI405860B (zh) | 2005-09-06 | 2006-09-06 | 成膜裝置、成膜裝置群、成膜方法、及電子裝置或有機電致發光元件之製造方法 |
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JP2005258043A JP5568729B2 (ja) | 2005-09-06 | 2005-09-06 | 成膜装置および成膜方法 |
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JP2007070679A JP2007070679A (ja) | 2007-03-22 |
JP5568729B2 true JP5568729B2 (ja) | 2014-08-13 |
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US (1) | US8383194B2 (ja) |
EP (1) | EP1932937B1 (ja) |
JP (1) | JP5568729B2 (ja) |
KR (1) | KR100990060B1 (ja) |
CN (1) | CN101258261A (ja) |
TW (1) | TWI405860B (ja) |
WO (1) | WO2007029671A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101238793B1 (ko) * | 2007-03-30 | 2013-03-04 | 도쿄엘렉트론가부시키가이샤 | 증착원 유닛, 증착 장치 및 증착원 유닛의 온도 조정 장치 |
CN101803460B (zh) * | 2007-09-10 | 2012-01-25 | 株式会社爱发科 | 有机材料蒸气产生装置、成膜源、成膜装置 |
KR101167546B1 (ko) * | 2007-09-10 | 2012-07-20 | 가부시키가이샤 알박 | 증착 장치 |
CN101803462B (zh) * | 2007-09-10 | 2012-06-27 | 株式会社爱发科 | 蒸气放出装置、有机薄膜蒸镀装置及有机薄膜蒸镀方法 |
KR20110014653A (ko) * | 2008-05-19 | 2011-02-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전자 소자에서 증기 코팅 장치 및 방법 |
CN102171377A (zh) * | 2008-09-30 | 2011-08-31 | 东京毅力科创株式会社 | 蒸镀装置、蒸镀方法以及存储有程序的存储介质 |
CN102776479A (zh) * | 2011-05-09 | 2012-11-14 | 无锡尚德太阳能电力有限公司 | 一种薄膜制备装置和方法 |
JP2014019942A (ja) * | 2012-07-23 | 2014-02-03 | Tokyo Electron Ltd | 成膜装置 |
JP2014095131A (ja) * | 2012-11-09 | 2014-05-22 | Tokyo Electron Ltd | 成膜装置 |
EP2960059B1 (en) | 2014-06-25 | 2018-10-24 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
US11267012B2 (en) * | 2014-06-25 | 2022-03-08 | Universal Display Corporation | Spatial control of vapor condensation using convection |
US11220737B2 (en) | 2014-06-25 | 2022-01-11 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
CA2901497A1 (en) | 2015-05-22 | 2016-11-22 | Wabash National, L.P. | Nose gap reducers for trailers |
KR102420015B1 (ko) * | 2015-08-28 | 2022-07-12 | 삼성전자주식회사 | Cs-ald 장치의 샤워헤드 |
US10566534B2 (en) | 2015-10-12 | 2020-02-18 | Universal Display Corporation | Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP) |
CN109423610B (zh) * | 2017-08-24 | 2020-12-04 | 京东方科技集团股份有限公司 | 一种蒸镀装置及蒸镀方法 |
CN112553578B (zh) * | 2019-09-26 | 2022-01-14 | 宝山钢铁股份有限公司 | 一种具有抑流式喷嘴的真空镀膜装置 |
CN112575308B (zh) * | 2019-09-29 | 2023-03-24 | 宝山钢铁股份有限公司 | 一种能在真空下带钢高效镀膜的真空镀膜装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01296613A (ja) * | 1988-05-25 | 1989-11-30 | Nec Corp | 3−v族化合物半導体の気相成長方法 |
JP2611009B2 (ja) * | 1989-09-12 | 1997-05-21 | 株式会社エステック | 有機金属化合物の気化供給装置 |
JP3360265B2 (ja) * | 1996-04-26 | 2002-12-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JPH1036189A (ja) * | 1996-07-19 | 1998-02-10 | Sony Corp | 気相成長装置 |
JPH10158843A (ja) * | 1996-12-06 | 1998-06-16 | Furukawa Electric Co Ltd:The | 気相成長装置 |
JP3967424B2 (ja) * | 1997-04-30 | 2007-08-29 | 東京エレクトロン株式会社 | 真空処理装置及び圧力調整方法 |
JP3030280B2 (ja) * | 1998-06-18 | 2000-04-10 | 国際電気株式会社 | 基板処理装置 |
TW451275B (en) * | 1999-06-22 | 2001-08-21 | Tokyo Electron Ltd | Metal organic chemical vapor deposition method and apparatus |
GB9929279D0 (en) * | 1999-12-11 | 2000-02-02 | Epichem Ltd | An improved method of and apparatus for the delivery of precursors in the vapour phase to a plurality of epitaxial reactor sites |
JP4674777B2 (ja) * | 2000-08-25 | 2011-04-20 | 株式会社アルバック | 炭化ケイ素膜の形成方法 |
JP2002280377A (ja) * | 2001-03-19 | 2002-09-27 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4704605B2 (ja) | 2001-05-23 | 2011-06-15 | 淳二 城戸 | 連続蒸着装置、蒸着装置及び蒸着方法 |
JP4082720B2 (ja) * | 2001-09-10 | 2008-04-30 | キヤノンアネルバ株式会社 | 基板表面処理装置 |
JP4627392B2 (ja) * | 2001-09-26 | 2011-02-09 | 株式会社アルバック | 真空処理装置および真空処理方法 |
JP2003347047A (ja) * | 2002-05-28 | 2003-12-05 | Sony Corp | 有機膜形成装置 |
JP4292777B2 (ja) * | 2002-06-17 | 2009-07-08 | ソニー株式会社 | 薄膜形成装置 |
JP4239520B2 (ja) * | 2002-08-21 | 2009-03-18 | ソニー株式会社 | 成膜装置およびその製造方法、並びにインジェクタ |
JP2004119705A (ja) * | 2002-09-26 | 2004-04-15 | Canon Inc | ガス供給装置および真空処理装置 |
KR100473806B1 (ko) | 2002-09-28 | 2005-03-10 | 한국전자통신연구원 | 유기물 박막 및 유기물 소자를 위한 대면적 유기물 기상증착 장치 및 제조 방법 |
JP2004143521A (ja) | 2002-10-24 | 2004-05-20 | Sony Corp | 薄膜形成装置 |
CN1723741B (zh) * | 2002-12-12 | 2012-09-05 | 株式会社半导体能源研究所 | 发光装置、制造装置、成膜方法及清洁方法 |
JP2004217968A (ja) * | 2003-01-10 | 2004-08-05 | Sony Corp | ガス搬送システム、成膜装置および有機el素子の製造装置 |
JP2005019265A (ja) * | 2003-06-27 | 2005-01-20 | Sony Corp | 薄膜形成装置および表示装置 |
JP2005216982A (ja) * | 2004-01-28 | 2005-08-11 | Nec Kansai Ltd | 真空処理装置及びそのパージ方法 |
JP4911555B2 (ja) | 2005-04-07 | 2012-04-04 | 国立大学法人東北大学 | 成膜装置および成膜方法 |
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2005
- 2005-09-06 JP JP2005258043A patent/JP5568729B2/ja active Active
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- 2006-09-05 KR KR1020087008125A patent/KR100990060B1/ko not_active IP Right Cessation
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- 2006-09-05 US US11/991,475 patent/US8383194B2/en not_active Expired - Fee Related
- 2006-09-05 CN CNA2006800325149A patent/CN101258261A/zh active Pending
- 2006-09-05 WO PCT/JP2006/317499 patent/WO2007029671A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
EP1932937B1 (en) | 2014-03-05 |
EP1932937A4 (en) | 2010-03-24 |
US8383194B2 (en) | 2013-02-26 |
TWI405860B (zh) | 2013-08-21 |
KR100990060B1 (ko) | 2010-10-29 |
KR20080053345A (ko) | 2008-06-12 |
WO2007029671A1 (ja) | 2007-03-15 |
US20090226604A1 (en) | 2009-09-10 |
JP2007070679A (ja) | 2007-03-22 |
CN101258261A (zh) | 2008-09-03 |
EP1932937A1 (en) | 2008-06-18 |
TW200728478A (en) | 2007-08-01 |
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