JP4789551B2 - 有機el成膜装置 - Google Patents
有機el成膜装置 Download PDFInfo
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- JP4789551B2 JP4789551B2 JP2005258558A JP2005258558A JP4789551B2 JP 4789551 B2 JP4789551 B2 JP 4789551B2 JP 2005258558 A JP2005258558 A JP 2005258558A JP 2005258558 A JP2005258558 A JP 2005258558A JP 4789551 B2 JP4789551 B2 JP 4789551B2
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- Prior art keywords
- vapor deposition
- deposition material
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Images
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Motor Or Generator Frames (AREA)
- Iron Core Of Rotating Electric Machines (AREA)
Description
本実施の形態は、走査型の蒸発源と、それに接続する蒸着材料供給手段を備えた成膜処理室を複数備えた成膜装置の構成を図1と図2を参照して説明する。
本実施の形態は、蒸発源を固定し、基板を動かして蒸着を行う成膜処理室の構成を図3を参照して説明する。
本実施の形態は、蒸発源と基板との両者を動かして蒸着を行う成膜処理室の構成について図4及び図5を用いて説明する。なお、図4は成膜処理室の正面図であり、図5は成膜処理室の内部構成を示す詳細図である。以下の説明ではこの両者を参照して説明する。
本実施の形態は、成膜装置の成膜処理室に備える蒸発源と、蒸着材料供給部の一例を図6を参照して説明する。本実施の形態では、蒸着材料の利用効率を高め、大面積基板にも連続して蒸着するために、気流により蒸着材料の粉末を供給する構成について示す。
本実施の形態は、成膜装置の成膜処理室に備える蒸発源と、蒸着材料供給部の一例を図7を参照して説明する。本実施の形態では、蒸着材料の利用効率を高め、大面積基板にも連続して蒸着するために、蒸着材料を溶剤中に溶解又は分散させた原料液を搬送し、噴霧器によりエアロゾル化し、エアロゾル中の溶媒を気化させながら蒸着を行うための構成について示す。
本実施の形態は、成膜装置の成膜処理室に備える蒸発源と、蒸着材料供給部の一例を図8を参照して説明する。本実施の形態では、蒸着材料の利用効率を高め、大面積基板にも連続して蒸着するために、蒸着材料を機械的手段によって連続的に供給する一例について説明する。
本実施の形態は、成膜装置の成膜処理室に備える蒸発源と、蒸着材料供給部の一例を図9を参照して説明する。本実施の形態では、蒸着材料の利用効率を高め、大面積基板にも連続して蒸着するために、蒸着材料を機械的手段によって連続的に供給する一例について説明する。
本実施の形態は、実施の形態1乃至7のいずれかの構成を備える成膜装置により作製されるEL素子の一例について説明する。本実施の形態では、一対の電極間にEL層を有するEL素子について説明する。
本実施の形態は、実施の形態1〜7で示される成膜装置により作製される発光装置の一例を図11を参照して説明する。なお、発光装置とは、画素とも呼ばれる表示単位を複数個配列させて文字、図形、記号、標識、静止画、動画などを表示する装置が含まれる。画素の配列にはマトリクス状に配列されるもの、セグメント状に配列されるものなどさまざまなものが含まれる。その他にも、発光装置には、明暗、色調などを変化させて情報を表示する装置全般が含まれる。また、光源若しくは照明として用いられる装置全般を含むものとする。
本実施の形態は、実施の形態1〜7で示される成膜装置により作製することのできる発光装置の一例を図14を参照して説明する。
本実施の形態は、実施の形態1〜7で示される成膜装置により作製することのできる発光装置の一例を図面を参照して説明する。本実施の形態では、特にトランジスタを含む素子基板の製造工程において、少なくとも一部にフォトマスクを用いないで所定のパターンを形成する工程を含む発光装置について図面を参照し説明する。
本実施の形態は、実施の形態1〜7で示される成膜装置により作製することのできる発光装置の一例を図面を参照して説明する。特に本実施の形態は、チャネルエッチ型のトランジスタを含む素子基板の製造工程において、少なくとも一部にフォトマスクを用いないで所定のパターンを形成する工程を含む発光装置について図面を参照し説明する。
実施の形態11、実施の形態12で示す表示装置において、走査線入力端子部と信号線入力端子部とに保護ダイオードを設けた一態様について図27を参照して説明する。図27は、画素704にはスイッチング用トランジスタ802、駆動用トランジスタ804が設けられている。
本実施の形態は、実施の形態9〜実施の形態13における発光装置の表示部における画素の配列と、その画素に対応したEL層の蒸着方法を図29と図30を参照して説明する。
本実施の形態は、実施の形態1〜7で示す成膜装置で、被膜を形成するときの成膜方法の一例について示す。
図32及び図33は、実施の形態13、実施の形態14、実施の形態15の素子基板800に駆動回路などを実装したモジュールの一例を示している。図32及び図33において、素子基板800には、画素704により構成される画素部702が形成されている。
実施の形態16により作製されるモジュールによって、テレビ装置を完成させることができる。図34はテレビ装置の主要な構成を示すブロック図を示している。素子基板900には、画素部901が形成されている。信号線駆動回路902と走査線駆動回路903は、素子基板900にCOG方式により実装されていても良い。
本実施の形態は、第1の実施の形態〜第9の実施の形態で示すいずれか一の表示モジュールを用いた携帯電話機の一例について、図36、図37を参照して説明する。
12 搬送室
14 ロード室
16 アンロード室
18 加熱処理室
20 成膜処理室
22 成膜処理室
24 成膜処理室
26 プラズマ処理室
28 成膜処理室
30 成膜処理室
32 成膜処理室
34 成膜処理室
36 中間室
38 封止処理室
40 搬送手段
42 搬送手段
50 蒸発源ホルダ
52 蒸発源
52a 蒸発源
52a 蒸発源
52b 蒸発源
52c 蒸発源
54 距離センサー
56 多関節アーム
58 材料供給源
58a 材料供給源
58b 材料供給源
58c 材料供給源
60 材料供給管
60a 材料供給管
60b 材料供給管
60c 材料供給管
62 基板ステージ
64 基板
66 チャック
68 シャドーマスク
70 チャック
72 天板
73 ヒータ
74 底板
76 蒸着材料供給部
78 ガイドレール
80 ガイドレール
81 搬送台
82 移動機構
84 移動機構
86 移動機構
88 ガイドレール
89 成膜処理室
90 ガイドレール
92 ゲートバルブ
100 筒状セル
102 ヒータ
106 粉体攪拌チャンバ
108 ガス供給管
110 ガス流量コントローラ
112 蒸着材料貯蔵セル
114 原料液貯蔵部
116 原料液供給手段
118 エアロゾル形成部
120 筒状セル
122 筒状セル
123 配線
124 ヒータ
126 搬送手段
128 蒸着材料貯蔵セル
130 搬送手段
132 材料供給管
140 蒸発源
142 リール
144 リール
146 タッチローラ
148 エネルギービーム供給源
150 ベースフィルム
152 蒸着材料
200 基板
201 EL素子
202 第1電極
204 第2電極
206 EL層
208 第1層
210 第2層
212 第3層
214 第4層
214 絶縁体層
Claims (4)
- 減圧状態を保持可能な処理室内に備えられ、蒸着材料を被着させる基板と対向し、不活性ガス又は反応性ガスと共に粉体状の蒸着材料を蒸発若しくは昇華させる蒸発源と、
前記蒸発源を該基板の主表面に沿って走査させる移動手段と、
前記蒸発源に材料供給管で連結され、前記粉体状の蒸着材料を前記不活性ガス又は前記反応性ガスと共に供給する蒸着材料供給手段と、を有し、
前記蒸着材料供給手段は粉体攪拌チャンバ、蒸着材料貯蔵セル及びガス供給管を有し、
前記粉体攪拌チャンバに前記蒸着材料貯蔵セル及び前記ガス供給管が連結され、
前記粉体攪拌チャンバ内にガス流量コントローラで流量が調節された前記不活性ガス又は前記反応性ガスが流れ込み、前記粉体攪拌チャンバ内にて前記蒸着材料貯蔵セルから供給される前記粉体状の蒸着材料が拡散して、前記不活性ガス又は前記反応性ガスと共に前記材料供給管を経て前記蒸発源に流入し、
前記蒸発源はセラミックで形成された筒状セルと、ヒータを有し、前記筒状セルの外側から前記ヒータで加熱し、
前記蒸発源に流入した前記粉体状の蒸着材料が前記筒状セル内で前記ヒータにより蒸発若しくは昇華されて前記筒状セルの開口部から前記不活性ガス又は前記反応性ガスと共に放出され、
前記材料供給管と前記筒状セルの接続部から前記筒状セルの前記開口部に向けて温度が高くなるように前記ヒータを設定することを特徴とする有機EL成膜装置。 - 減圧状態を保持可能な処理室内に備えられ、蒸着材料を被着させる基板と対向し、粉体状の蒸着材料を蒸発若しくは昇華させる蒸発源と、
前記蒸発源を該基板の主表面に沿って走査させる移動手段と、
前記蒸発源に連結され、前記粉体状の蒸着材料を材料供給管内に配設されたスクリューを回転させて連続的に供給する蒸着材料供給手段と、を有し、
前記材料供給管の一方の端に蒸着材料貯蔵セルから前記粉体状の蒸着材料が供給され、
供給された前記粉体状の蒸着材料は前記スクリューの回転により前記蒸発源に供給され、
前記蒸発源は筒状セルとヒータを有し、前記筒状セルの外側から前記ヒータで加熱し、
前記蒸発源に供給された前記粉体状の蒸着材料が前記筒状セル内で前記ヒータにより蒸発若しくは昇華されて前記筒状セルの開口部から放出され、
前記材料供給管と前記筒状セルの接続部から前記筒状セルの前記開口部に向けて温度が高くなるように前記ヒータを設定することを特徴とする有機EL成膜装置。 - 請求項1又は2において、前記蒸発源が複数個備えられていることを特徴とする有機EL成膜装置。
- 請求項1乃至3のいずれか一に記載の、前記蒸発源と、前記移動手段と、前記蒸着材料供給手段とを備えた成膜処理室を複数備えたことを特徴とする有機EL成膜装置。
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US20070054051A1 (en) | 2007-03-08 |
CN1928149B (zh) | 2011-06-15 |
TW200721264A (en) | 2007-06-01 |
JP2007070687A (ja) | 2007-03-22 |
CN102199745A (zh) | 2011-09-28 |
CN1928149A (zh) | 2007-03-14 |
TWI438826B (zh) | 2014-05-21 |
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