CN102084470A - 金属氮氧化物薄膜晶体管的覆盖层 - Google Patents
金属氮氧化物薄膜晶体管的覆盖层 Download PDFInfo
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L29/772—Field effect transistors
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Abstract
覆盖层可以沉积在TFT的主动通道上方,以保护主动通道免受污染。覆盖层可影响TFT的效能。若覆盖层含有过多的氢、氮或氧,则TFT的临界电压、次临界斜率及迁移率会受到负面的影响。通过控制含氮、含氧及含氢气体的流动速率的比例,则可使TFT效能最佳化。此外,亦可控制功率密度、覆盖层沉积压力及温度来使TFT效能最佳化。
Description
技术领域
本发明的实施例一般是关于制造薄膜晶体管(TFTs)的方法。
背景技术
目前对TFT数组的关注相当高,此乃因为这些组件可用于常利用于计算机及电视平面面板(flat panel)的液晶主动矩阵显示器(LCDs)中。LCDs亦可包含用于背光(back lighting)的发光二极管(LEDs)。再者,有机发光二极管(OLEDs)亦可用于主动矩阵显示器,而这些OLEDs需要TFTs来解决显示器的放射强度(activity)问题。
由非晶硅构成的TFTs已成为平板显示器工业的主要构成要素。不幸的,非晶硅本身具有其限制性,例如低迁移率(mobility)。OLEDs所需要的迁移率为非晶硅所能达成的迁移率的至少10倍高。另外,OLED显示器对于临界电压偏移(Vth shift)较为敏感,因为其是一种电流驱动组件。无论在高电流或是高偏压下的非晶硅TFTs的临界电压偏移是待解决的一个问题。另一方面,多晶硅相较于非晶硅而具有较高的迁移率。然多晶硅为结晶状,因而导致不良的局部非均一性。由于制造多晶硅薄膜的复杂退火工艺的需求,因此使用多晶硅来制造大面积显示器是较为困难及/或花费较高。由于非晶硅的限制,使得OLED的进展相当困难。
近年来,已发展出透明TFTs,其中氧化锌用作为主动通道层。氧化锌是一种化合物半导体,其可以在相对低的沉积温度下而于各种基板(例如玻璃及塑料)上生长为结晶状物质。氧化锌(based)半导体可透过掺杂而成为非晶物质。因此,掺杂的氧化锌将可避免因为非均一晶粒结构所造成的非均一性问题。在目前使用底部栅极TFT结构的显示器制造工艺中,非晶半导体(例如氧化锌)是较易实施的。
因此,在此技艺中需要一种具有透明主动通道的TFT,且其具有高迁移率。
发明内容
覆盖层可以沉积在TFT的主动通道上方,以保护主动通道免受污染。覆盖层可影响TFT的效能。若覆盖层含有过多的氢、氮或氧,则TFT的临界电压、次临界斜率(sub threshold slope)及迁移率会受到负面的影响。通过控制含氮、含氧及含氢气体的流动速率的比例,则可使TFT效能最佳化。此外,亦可控制功率密度、覆盖层沉积压力及温度来使TFT效能最佳化。
在本发明的一实施例中,揭露一种薄膜晶体管制造方法。该方法包括:在一薄膜晶体管堆栈上方沉积一半导体层,该薄膜晶体管堆栈包括一基板、一栅极电极以及一栅极介电层;在该半导体层上沉积一传导层;蚀刻该传导层以及该半导体层;以及在暴露的半导体层上方沉积一覆盖层。半导体层包括氮、氧及一或多个选自锌、铟、锡、镓、镉及其组合的元素。在一实施例中,半导体层包括氧及一或多个选自锌、铟、镓、镉及其组合的元素。蚀刻界定TFT主动区域以及源极与漏极电极,并暴露出在源极与漏极电极之间而界定为一主动通道的一部分半导体层。沉积该覆盖层包括将N2O及SiH4气体流入一工艺腔室内,且N2O及SiH4的一比例是介于约20∶1~约40∶1。
在另一实施例中,揭露一种薄膜晶体管制造方法。该方法包括:在一薄膜晶体管堆栈上方沉积一半导体层,该薄膜晶体管堆栈包括一基板、一栅极电极以及一栅极介电层;在该半导体层上沉积一覆盖层;蚀刻覆盖层,并使覆盖层覆盖住TFT主动区域;沉积传导层;以及界定出源极与漏极电极以及主动通道区域。半导体层包括氮、氧及一或多个选自锌、铟、锡、镓、镉及其组合的元素。在一实施例中,半导体层包括氧及一或多个选自锌、铟、锡、镓、镉及其组合的元素。覆盖层亦可称之为蚀刻终止层。覆盖层的蚀刻界定出TFT的主动区域,传导层的蚀刻界定出源极与漏极电极。覆盖层的沉积包括将N2O、SiH4及PH3气体流入一工艺腔室内,并控制送至工艺腔室中的气体分布喷洒头的功率密度。压力可介于约500毫托(mTorr)~约2.5托。功率密度介于约1.16×10-6W/cm2~约4.63×10-3W/cm2。
在另一实施例中,薄膜晶体管包括:一或多个栅极介电层,设置在一栅极电极与一基板上方;一半导体层,设置在该一或多个栅极介电层上方;源极与漏极电极;第一覆盖层,设置在该半导体层上方,并蚀刻有一图案以界定主动通道;以及第二覆盖层,设置在第一覆盖层与其它区域上方。半导体层包括氮、氧及一或多个选自锌、铟、镓、镉、锡及其组合的元素。在一实施例中,半导体层包括氧及一或多个选自锌、铟、锡、镓、镉、及其组合的元素。该源极电极与该漏极电极相隔一第一距离,并暴露出界定为一主动通道的该半导体层的一部分。
覆盖层可以为单一层或多个层,其具有组合为氧化硅、氮化硅、氮氧化硅、碳化硅、非晶碳、其它介电膜或其组合。覆盖层(或是多层覆盖层)可以在单一工艺腔室中沉积。
附图说明
为让本发明的上述特征更明显易懂,可配合参考实施例说明,其部分乃绘示如附图式。须注意的是,虽然所附图式揭露本发明特定实施例,但其并非用以限定本发明的精神与范围,任何熟习此技艺者,当可作各种的更动与润饰而得等效实施例。
图1A~1G,为根据本发明的一实施例的TFT 100的各个制造阶段的概要剖面视图。
图2,为根据本发明的另一实施例的TFT 200的概要剖面视图。
图3,为显示N2O及SiH4对于根据本发明的一实施例的TFT的临界电压的影响的图表。
图4,显示施加至喷洒头(showerhead)的功率以及N2O相对于SiH4的比例对于根据本发明的一实施例的TFT的临界电压的影响的图表。
图5,显示PH3对于根据本发明的一实施例的TFT的临界电压的影响的图表。
图6A及6B,显示腔室压力对于根据本发明的一实施例的TFT的临界电压的影响的图表。
图7,显示功率及压力两者对于根据本发明的一实施例的TFT的临界电压的影响的图表。
图8,显示对根据本发明的一实施例的TFT中的覆盖层进行退火的影响的图表。
图9A及9B,显示温度对于根据本发明的一实施例的TFT的临界电压的影响的图表。
图10A及10B,显示根据本发明的一实施例而采氮化硅作为第二覆盖层的影响的图表。
为便于了解,图式中相同的组件符号表示相同的组件。某一实施例采用的组件当不需特别详述而可应用到其它实施例。
具体实施方式
覆盖层(capping layer)是沉积在TFT的主动通道上,以保护主动通道不受到污染。覆盖层可能会影响TFT的效能。如果覆盖层含有过多的氢、氮或氧,则TFT的临界电压、次临界斜率(sub threshold slope)及迁移率会受到负面的影响。通过控制含氮、含氧及含氢气体的流动速率的比例,则可使TFT效能最佳化。此外,亦可控制功率密度、覆盖层沉积压力及温度来使TFT效能最佳化。
图1A~1G为根据本发明的一实施例的TFT 100的各个制造阶段的概要剖面视图。TFT可包括基板102。在一实施例中,基板102可包括玻璃。在另一实施例中,基板102可包括聚合物。在另一实施例中,基板102可包括塑料。在又另一实施例中,基板102可包括金属。
栅极电极104是形成在基板上方。栅极电极104可包括导电层,其可控制电荷载子在TFT内的移动。栅极电极104可包括金属,例如:铝、钨、铬、钽、或其组合。栅极电极104可使用习知的沉积技术形成,包括溅射、微影蚀刻(lithography)及蚀刻。栅极电极104可通过将一传导层毯覆沉积(blanket depositing)在基板102上而形成。传导层可以通过溅射而沉积。之后,光阻层可以沉积在传导层上方。光阻层可经图案化以形成光罩。栅极电极104的形成可通过蚀刻移除传导层的未经屏蔽的部分,而留下栅极电极104在基板102上。
栅极介电层106是沉积在栅极电极104上方。栅极介电层106会影响TFT的次临界摆幅(sub threshold swing)或斜率及临界电压。针对硅系TFTs(即,具有硅系半导体层的TFTs,例如非晶硅),栅极介电层106不能包含有氧化硅,因为Vth与栅极电压的0伏特差异极大,而使TFT的效能极差。然而,针对金属氧化物TFTs,已发现到氧化硅可以作为有效的栅极介电层106。氧化硅中的氧不会对金属氧化物层造成不利的改变,因此,TFT可能不会失效。在一实施例中,栅极介电层106可包含氮化硅。在另一实施例中,栅极介电层106可包括氧化硅。在另一实施例中,栅极介电层106可包括氮氧化硅。在另一实施例中,栅极介电层106可包括Al2O3。栅极介电层106可以通过已知的沉积技术来沉积,包括等离子辅助化学气相沉积(PECVD)。在一实施例中,栅极介电层106可以通过物理气相沉积(PVD)来沉积。
在栅极介电层106沉积之后,对栅极介电层106进行处理。处理技术的一是将栅极介电层106暴露于等离子108,以使栅极介电层106的表面钝化。在一实施例中,栅极介电层106可暴露于包括含氧气体(例如N2O或O2)的等离子。在另一实施例中,栅极介电层106在暴露于含氧等离子之后,可暴露于包括H2、Ar、N2或PH3的等离子。在另一实施例中,栅极介电层106可暴露于缺乏等离子的含氧气体,例如N2O或O2。在另一实施例中,栅极介电层106在暴露于含氧气体之后,再暴露于含氧等离子。在又另一实施例中,除了对栅极介电层106进行处理以外,或是取代对栅极介电层106进行处理,可以在栅极介电层106上沉积氧化硅层。
在对栅极介电层106进行处理之后,可以在其上沉积半导体层110。半导体层110将是在最终TFT结构中包括主动通道的材料。半导体层110可包括氧、氮及一或多个选自由锌、镓、镉、铟、锡及其组合所组成的群组的元素。在一实施例中,半导体层110包括氧、氮及一或多个具有填满的s轨域及填满的d轨域的元素。在另一实施例中,半导体层110可包括氧、氮及一或多个具有填满的f轨域的元素。在另一实施例中,半导体层110可包括氧、氮及一或多个二价元素。在另一实施例中,半导体层110可包括氧、氮及一或多个三价元素。在另一实施例中,半导体层可包括氧、氮及一或多个四价元素。
半导体层110亦可包括掺质(dopant)。可使用的适合的掺质包括Al、Sn、Ga、Ca、Si、Ti、Cu、Ge、In、Ni、Mn、Cr、V、Mg、SixNy、AlxOy以及SiC。在一实施例中,掺质包括铝。在另一实施例中,掺质包括锡。
半导体层110的实例包括下列各者:ZnOxNy、SnOxNy、InOxNy、CdOxNy、GaOxNy、ZnSnOxNy、ZnInOxNy、ZnCdOxNy、ZnGaOxNy、SnInOxNy、SnCdOxNy、SnGaOxNy、InCdOxNy、InGaOxNy、CdGaOxNy、ZnSnInOxNy、ZnSnCdOxNy、ZnSnGaOxNy、ZnInCdOxNy、ZnInGaOxNy、ZnCdGaOxNy、SnInCdOxNy、SnInGaOxNy、SnCdGaOxNy、InCdGaOxNy、ZnSnInCdOxNy、ZnSnInGaOxNy、ZnInCdGaOxNy以及SnInCdGaOxNy。半导体层110的实例包括下列的掺杂材料:ZnOxNy:Al、ZnOxNy:Sn、SnOxNy:Al、InOxNy:Al、InOxNy:Sn、CdOxNy:Al、CdOxNy:Sn,GaOxNy:Al、GaOxNy:Sn、ZnSnOxNy:Al、ZnInOxNy:Al、ZnInOxNy:Sn、ZnCdOxNy:Al、ZnCdOxNy:Sn、ZnGaOxNy:Al、ZnGaOxNy:Sn、SnInOxNy:Al、SnCdOxNy:Al、SnGaOxNy:Al、InCdOxNy:Al、InCdOxNy:Sn、InGaOxNy:Al、InGaOxNy:Sn、CdGaOxNy:Al、CdGaOxNy:Sn、ZnSnInOxNy:Al、ZnSnCdOxNy:Al、ZnSnGaOxNy:Al、ZnInCdOxNy:Al、ZnInCdOxNy:Sn、ZnInGaOxNy:Al、ZnInGaOxNy:Sn、ZnCdGaOxNy:Al、ZnCdGaOxNy:Sn、SnInCdOxNy:Al、SnInGaOxNy:Al、SnCdGaOxNy:Al、InCdGaOxNy:Al、InCdGaOxNy:Sn、ZnSnInCdOxNy:Al、ZnSnInGaOxNy:Al、ZnInCdGaOxNy:Al、ZnInCdGaOxNy:Sn以及SnInCdGaOxNy:Al。
半导体层110可以通过溅射来沉积。在一实施例中,溅射靶材包括金属,例如锌、镓、锡、镉、铟或其组合。溅射靶材可另外包括有掺质。可将含氧气体及含氮气体导入腔室中,以通过反应性溅射来沉积半导体层110。在一实施例中,含氮气体包括N2。在另一实施例中,含氮气体包括N2O、NH3或其组合。在一实施例中,含氧气体包括O2。在另一实施例中,含氧气体包括N2O。含氮气体的氮与含氧气体的氧与来自溅射靶材的金属反应,以在基板上形成包括金属、氧、氮及选择性包括掺质的半导体材料。在一实施例中,含氮气体与含氧气体为分离的气体。在另一实施例中,含氮气体与含氧气体包括相同的气体。额外的添加物(例如B2H6、CO2、CO、CH4及其组合)亦可以在溅射过程中提供至腔室。
在半导体层110沉积之后,可沉积传导层112。在一实施例中,传导层112可包括一金属,例如铝、钨、钼、铬、钽及其组合。可以使用PVD来沉积传导层112。
在沉积传导层112之后,可以通过蚀刻移除部分的传导层112来界定源极电极114、漏极电极116及主动通道118。部分的半导体层110可以通过蚀刻来移除。虽然图中并未示出,在沉积传导层的前,可在半导体层110上方沉积覆盖层(或蚀刻终止层)。蚀刻终止层的功用在于保护主动通道118于蚀刻过程中免受过度的等离子暴露。
在半导体层110上方以及主动通道118中,沉积第一覆盖层120。在一实施例中,第一覆盖层120可包括氧化硅。在另一实施例中,第一覆盖层120可包括氮氧化硅。在一实施例中,第一覆盖层120可以通过PECVD来沉积。在另一实施例中,第一覆盖层120可以通过CVD沉积。在另一实施例中,第一覆盖层120可以包括碳化硅。在另一实施例中,第一覆盖层120可包括非晶碳。
为了沉积第一覆盖层120,将含硅气体导引进入工艺腔室中。在一实施例中,含硅气体可包括SiH4。在另一实施例中,含硅气体可包括TEOS。除了含硅气体之外,亦可导入N2O、NO、NO2、O2、CO、CO2、NH3及其组合。N2O相对于含硅气体导入的流量比例(flow ratio)为约20∶1~约40∶1。在用于硅系TFTs(即,包括硅的半导体层)的习知氮化硅覆盖层中的氢与氮可能不具有足够的氧来平衡掉氢与氮对于TFT的效应,因而可能会导致临界电压的负向偏移。可以通过控制SiH4相对于N2O的比例而调整第一覆盖层120中的氧含量。氧含量不应太高。若第一覆盖层120中的氧含量太高,则导通电流(on-current;Ion)或迁移率会大幅降低。高氧含量可能使得在顶层上的强正电荷的源极-漏极图案化过程中的受到破坏的半导体层的面积扩大,其会影响在电场下的电子移动。除了含硅气体以及N2O气体以外,亦可导入氮气(N2)。
除了含硅气体与N2O气体以外,可导入PH3气体。氢可增加TFT的迁移率。因此,由于PH3气体中的氢,故PH3气体可增加TFT的迁移率。然而,氢会使得TFT的临界电压偏移,因而变得更为负值。因此,在第一覆盖层120沉积过程中存在于腔室中的氢含量需要经过权衡,以符合使用者的需求。举例来说,若使用者愿意牺牲临界电压,则可达到较高的迁移率。在一实施例中,PH3气体相对于导入工艺腔室中的气体的总氢含量的比例可介于约1∶190~约1∶200。当沉积含碳的第一覆盖层120时,可导入的气体包括N2、H2及含碳气体(例如C2H2)。
在沉积第一覆盖层120之后,可对第一覆盖层120进行处理。处理技术的一包括将第一覆盖层120暴露于等离子以钝化第一覆盖层120的表面。在一实施例中,第一覆盖层120可暴露于包括含氧气体(例如N2O或O2)的等离子。在另一实施例中,第一覆盖层120在暴露于含氧等离子之后,可暴露于包括H2、Ar、N2或PH3的等离子。在另一实施例中,第一覆盖层120可暴露于缺乏等离子的含氧气体,例如N2O、He、H2、N2、O2或其组合。在另一实施例中,第一覆盖层120在暴露于含氧气体之后,可暴露于含氧等离子。
第二覆盖层122可以沉积在第一覆盖层120上方。在一实施例中,第二覆盖层122的组成不同于第一覆盖层120。在另一实施例中,第二覆盖层122与第一覆盖层120的组成相同。当第一覆盖层120与第二覆盖层122的组成相同,则第一覆盖层120与第二覆盖层122可以在单一沉积步骤中进行沉积。在一实施例中,第一覆盖层120与第二覆盖层122包括在单一工艺步骤中沉积的单一层,而该单一层具有一组成梯度,该梯度遍及该层而改变,而使得在主动通道118中与半导体层110的接口的氧含量大于层的其它部分的氧含量。针对第一及第二覆盖层120、122的集合厚度,第一覆盖层可包括总厚度的约5%~约20%。在一实施例中,第一覆盖层120的厚度为约75~约125。
在沉积第二覆盖层122之后,可对第二覆盖层122进行处理。处理技术的一包括将第二覆盖层122暴露于等离子以钝化第二覆盖层122的表面。在一实施例中,第二覆盖层122可暴露于包括含氧气体(例如N2O或O2)的等离子。在另一实施例中,第二覆盖层122在暴露于含氧等离子之后,可暴露于包括H2、Ar、N2或PH3的等离子。在另一实施例中,第二覆盖层122可暴露于缺乏等离子的含氧气体,例如N2O或O2。在另一实施例中,第二覆盖层122在暴露于含氧气体之后,可暴露于含氧等离子。
图2为根据本发明的另一实施例的TFT 200的概要剖面视图。TFT 200包括一设置在基板202上方的栅极电极204。亦包括有第一覆盖层220、第二覆盖层222、源极电极214、漏极电极216、主动通道218及半导体层210。包括有多层栅极介电层。栅极介电层可具有第一栅极介电层206与第二栅极介电层208。在一实施例中,第一栅极介电层206包括氮化硅。在一实施例中,第二栅极介电层208可包括氧化硅。如上所述,无法用于硅系TFTs的氧化硅可有利地利用在金属氧化物TFTs中。
图3为显示N2O及SiH4对于根据本发明的一实施例的TFT的临界电压的影响的图表。N2O及硅烷的流动速率是显示为sccm。当硅烷的量升高,则次临界斜率及迁移率改善。迁移率的改善是因为氢含量的增加。硅烷流相对于N2O流的增加亦会使关闭电流(Ioff current)降低。降低N2O流可能不足够,因为降低10%的N2O流(例如1000sccm的流动速率)将会使N2O流相对于硅烷流的比例由约20∶1降低至约19∶1(假设硅烷流动速率为50sccm)。然而,增加硅烷的流动速率10%(假设硅烷流动速率为50sccm)将会使N2O流相对于硅烷流的比例由约20∶1降低至约18∶1。当N2O流相对于硅烷流的比例降低,则次临界斜率值降低、迁移率增加。
图4显示施加至喷洒头(showerhead)的功率以及N2O相对于SiH4的比例对于根据本发明的一实施例的TFT的临界电压的影响的图表。在各例中,硅烷是以50sccm的速率流动。N2O的流动速率是以sccm显示。当降低N2O流相对于硅烷流的比例,则会使迁移率增加,其亦会使Ioff电流增加,而使临界电压移向更呈负值(more negative)。然而,增加所施加的功率(因此增加功率密度)将会增加迁移率并降低次临界斜率,但临界电压可能会更呈负值。当在覆盖层沉积之后进行松弛处理(relaxing)(即,在沉积温度下进行退火一段时间),则临界电压会变得更呈正值(more positive),并使次临界斜率值降低,但是迁移率仅些微降低。
图5显示PH3对于根据本发明的一实施例的TFT的临界电压的影响的图表。N2O与PH3的流动速率是以sccm显示。PH3相对于总氢含量的低比例可使迁移率增加。然而,若PH3相对于总氢含量的比例过高,则相较于缺乏PH3的情况,其反而会使临界电压更呈负值,并对Ion或是迁移率仅有些微影响或是没有影响。
图6A及6B显示腔室压力对于根据本发明的一实施例的TFT的临界电压的影响的图表。腔室压力愈低,则次临界斜率的值愈低,但在较低压力下,Ioff尾巴(tail)较高。
图7显示功率及压力两者对于根据本发明的一实施例的TFT的临界电压的影响的图表。针对图7所示的数据,N2O相对于硅烷的比例为恒定的。功率密度会影响Ioff电流、临界电压及迁移率。如图7所示,1500W的数据具有最差的Ioff电流。当使得功率保持恒定,较低压力提供最低的Ioff电流以及更呈正值的临界电压。
图8显示对根据本发明的一实施例的TFT中的覆盖层进行退火的影响的图表。N2O相对于硅烷的较高比例会使临界电压朝向更为正值方向移动。N2O相对于硅烷的较低比例会使临界电压朝向更为负值方向移动。退火会使得临界电压偏移至更为正值。在一实施例中,退火发生在介于约200℃~约300℃的温度。
图9A及9B显示温度对于根据本发明的一实施例的TFT的临界电压的影响的图表。覆盖层的沉积温度愈高,则Ioff愈低、迁移率愈高、临界电压呈更为负值。此外,覆盖层的沉积温度愈高,则Ioff尾巴往愈低移动。当覆盖层并未经过后处理(post treated)时,临界电压亦为较小。
图10A及10B显示根据本发明的一实施例而采氮化硅作为第二覆盖层的影响的图表。氮化硅沉积在已沉积的氧化硅层上方。在图10A及10B所示的实施例中,覆盖膜的总沉积时间为约120秒。当沉积氧化硅膜30秒,并沉积氮化硅膜90秒,则会使迁移率增加。然而,氮化硅会使得临界电压偏向更为负值。
通过控制氧、氢及氮含量,以及沉积覆盖膜时的温度、压力及功率密度,则可使得迁移率、临界电压、Ion电流、Ioff电流及次临界斜率最佳化。
惟本发明虽以较佳实施例说明如上,然其并非用以限定本发明,任何熟习此技术人员,在不脱离本发明的精神和范围内所作的更动与润饰,仍应属本发明的技术范畴,且本发明的范畴由权利要求界定。
Claims (15)
1.一种薄膜晶体管制造方法,包括:
在薄膜晶体管堆栈上方沉积半导体层,该薄膜晶体管堆栈包括基板、栅极电极以及栅极介电层,该半导体层包括氮、氧及一或多个选自锌、铟、锡、镓、镉及其组合的元素;
在该半导体层上沉积传导层;
蚀刻该传导层以界定出源极电极与漏极电极,并暴露出在该源极电极与该漏极电极之间而界定为主动通道的该半导体层的一部分;以及
通过将N2O及SiH4气体流入工艺腔室内,以在该暴露的半导体层上方沉积覆盖层,而N2O及SiH4的比例介于约20∶1~约40∶1。
2.如权利要求1所述的方法,更包括伴随N2O及SiH4气体而流入PH3气体,其中PH3气体相对于流入该工艺腔室中的总氢量的一比例介于约1∶1000~约1∶150。
3.如权利要求1所述的方法,更包括伴随N2O及SiH4气体而流入N2气体。
4.如权利要求1所述的方法,其中该覆盖层包括氧化硅,且更包括沉积在该氧化硅覆盖层上方的氮化硅层。
5.如权利要求1所述的方法,其中该覆盖层包括具有氧化硅而沉积邻近该半导体层的数个层。
6.如权利要求1所述的方法,更包括将该栅极介电层暴露于N2O气体或是由N2O气体所形成的等离子的一或多者。
7.如权利要求1所述的方法,其中该半导体层是通过溅射而沉积,且其中该半导体层包括掺质(dopant)。
8.一种薄膜晶体管制造方法,包括:
在薄膜晶体管堆栈上方沉积半导体层,该薄膜晶体管堆栈包括基板、栅极电极以及栅极介电层,该半导体层包括氮、氧及一或多个选自锌、铟、锡、镓、镉及其组合的元素;
在该半导体层上沉积传导层;
蚀刻该传导层以界定出源极电极与漏极电极,并暴露出在该源极电极与该漏极电极之间而界定为主动通道的该半导体层的一部分;以及
在该暴露的半导体层上方而于该主动通道中沉积氧化硅层,以部分填充该主动通道,该沉积步骤包括:将N2O、SiH4及PH3气体流入工艺腔室内,以获得约500毫托(mTorr)~约2.5托的腔室压力,且施加射频偏压(RF bias)至该工艺腔室中的气体分布喷洒头,该RF偏压介于约1.16×10-6W/cm2~约4.63×10-3W/cm2。
9.如权利要求8所述的方法,其中N2O及SiH4的一流量比例介于约20∶1~约40∶1。
10.如权利要求9所述的方法,其中PH3气体相对于流入该工艺腔室中的总氢量的比例介于约1∶1000~约1∶150。
11.如权利要求8所述的方法,更包括伴随N2O及SiH4气体而流入N2气体。
12.如权利要求8所述的方法,更包括将该栅极介电层暴露于N2O气体或是由N2O气体所形成的等离子的一或多者。
13.如权利要求8所述的方法,其中该半导体层是通过溅射而沉积,其中氧化硅层是在约200℃~约350℃之间的温度沉积。
14.一种薄膜晶体管,包括:
一或多个栅极介电层,是设置在栅极电极与基板上方;
半导体层,设置在该一或多个栅极介电层上方,该半导体层包括氮、氧及一或多个选自锌、铟、镓、镉、锡及其组合的元素;
源极电极与漏极电极,设置在该半导体层的一部分上方,该源极电极与该漏极电极相隔第一距离,并暴露出界定为主动通道的该半导体层的一部分;以及
第一覆盖层,设置在该半导体层上方而位于该主动通道中,并部分填充该主动通道,该第一覆盖层包括氧化硅。
15.如权利要求14所述的晶体管,更包括:
设置在该第一覆盖层上方的第二覆盖层,且该第二覆盖层的组成不同于该第一覆盖层的组成,其中该第二覆盖层包括氮化硅,其中该栅极介电层包括氧化硅,其中该半导体层包括掺质,该掺质是选自由铝、锡、镓、钙、硅、钛、铜、锗、铟、镍、锰、铬、钒、镁及其组合所组成的群组。
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