CN109637923B - 一种显示基板及其制作方法和显示装置 - Google Patents

一种显示基板及其制作方法和显示装置 Download PDF

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CN109637923B
CN109637923B CN201811350776.0A CN201811350776A CN109637923B CN 109637923 B CN109637923 B CN 109637923B CN 201811350776 A CN201811350776 A CN 201811350776A CN 109637923 B CN109637923 B CN 109637923B
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insulating layer
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葛邦同
付婷婷
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HKC Co Ltd
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Abstract

本发明公开了一种显示基板及其制作方法和显示装置。一种显示基板的制作方法，包括：在衬底上形成栅极、栅极绝缘层、有源层、源极和漏极；其中，在有源层和栅极绝缘层的接触面进行等离子体清洗。本方案采用等离子体清洗方法处理栅极绝缘层和有源层的接触面，消除该接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性。

Description

一种显示基板及其制作方法和显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种显示基板及其制作方法和显示装置。
背景技术
随着科技的发展和进步，液晶显示器由于具备机身薄、省电和辐射低等热点而成为显示器的主流产品，得到了广泛应用。现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶面板及背光模组(backlightmodule)。液晶面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，并在两片玻璃基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。其中，薄膜晶体管液晶显示器(Thin FilmTransistor-Liquid Crystal Display，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管液晶显示器包含液晶面板和背光模组，液晶面板包括彩膜基板(Color Filter Substrate，CFSubstrate，也称彩色滤光片基板)、薄膜晶体管阵列基板(Thin Film TransistorSubstrate，TFTSubstrate)和光罩(Mask)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(LiquidCrystal，LC)。
在TFT(Thin Film Transistor，薄膜晶体管)工艺生产流程中，TFT器件稳定对产品稳定性尤为重要。目前阈值电压是用来评估器件的稳定性最重要的评估标准参数。当阈值电压小于0时，器件需要很高的栅源电压负电压使TFT器件关闭，影响器件的稳定性。
发明内容
鉴于现有技术的上述问题，本发明所要解决的技术问题是提供一种能提高器件稳定性的显示基板的制作方法。
为实现上述目的，本发明提供了一种显示基板的制作方法，包括：
衬底
在所述衬底上形成栅极、栅极绝缘层、有源层、源极和漏极；
其中，在有源层和栅极绝缘层的接触面进行等离子体清洗。
可选的，所述形成栅极、栅极绝缘层、有源层、源极和漏极的步骤包括：
形成第一金属层，并将第一金属层两侧的区域蚀刻掉，形成栅极；
形成栅极绝缘层，所述栅极绝缘层覆盖所述栅极；
在栅极绝缘层上进行等离子体清洗；
在栅极绝缘层上形成有源层；
在有源层上分别形成源极和漏极；
在源极和漏极上形成钝化层和透明电极层。
本方案采用等离子体清洗处理栅极绝缘层的表面，可以消除有源层和栅极绝缘层接触面积累的正电荷，降低正电荷形成内电场的大小，使阈值电压大于零，从而提高器件的稳定性。
可选的，所述在栅极绝缘层上进行等离子体清洗的步骤中，在栅极绝缘层上使用氨气进行等离子体清洗。
本方案采用氨气(NH3)进行等离子体清洗处理栅极绝缘层的表面，消除有源层和栅极绝缘层接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性；
可选的，所述在栅极绝缘层上进行等离子体清洗的步骤中，在栅极绝缘层上使用氧氧气进行等离子体进行清洗。
在栅极绝缘层上使用氧气进行等离子体清洗，一方面是可以形成致密的氧化硅绝缘层，和有源层的界面缺陷态密度低，漏电更小，使TFT的稳定性更好，二是氧等离子体产生的氧负离子同样可以消除界面积累的正电荷，降低正电荷形成内电场的大小，从而使阈值电压大于零，从而提高器件的稳定性。
可选的，所述在栅极绝缘层上进行等离子体清洗的步骤中，在栅极绝缘层上，先使用氢气进行第一次等离子体清洗；之后，再用一氧化二氮或氧气进行第二次等离子体清洗。
本方案先采用氢气进行等离子体清洗，可显著降低正电荷形成的内电场大小；但氢离子残留过多，会影响TFT性能，使得后续工艺中膜层表面会形成较多孔洞；之后再使用一氧化二氮或氧气进行第二次等离子体清洗，在进一步降低正电荷形成的内电场大小的同时，还可以对第一次等离子清洗步骤中的残留的氢离子进行进一步清洗，使得显示基板的性能更加稳定。
可选的，所述形成栅极、栅极绝缘层、有源层、源极和漏极的步骤包括：
形成源极和漏极；
在源极和漏极上形成有源层；
在有源层上进行等离子体清洗；
在有源层上形成栅极绝缘层；
在栅极绝缘层上形成栅极。
对于顶栅型的TFT结构，本方案采用等离子体清洗处理有源层的表面，可以很有效的消除有源层和栅极绝缘层接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性。
本发明还公开了一种显示基板，包括：
层叠设置的栅极、栅极绝缘层、有源层、源极和漏极；
其中，所述的有源层和栅极绝缘层的接触面经等离子体清洗处理。
在显示基板工艺生产流程中，显示基板器件稳定对产品稳定性尤为重要。阈值电压是用来评估器件的稳定性最重要的评估标准参数。显示基板的栅极绝缘层与有源层界面积累大量的正电荷形成一个内电场，内电场会吸引沟道电子于栅极绝缘层上形成导电沟道，阈值电压小于零，器件需要很高的栅源电压负电压使显示基板器件关闭，影响器件的稳定性。本方案采用等离子体清洗处理栅极绝缘层和有源层的接触面，消除该接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性。
可选的，所述的显示基板中；
所述栅极绝缘层设置在所述栅极上；
所述栅极绝缘层有经氧离子清洗后形成的一层氧化层；
所述有源层设置在所述栅极绝缘层上；
所述源极和漏极，分别设置在有源层的上表面两侧；
所述钝化层和透明电极层，设置漏极和源极上。
本方案采用氧离子体清洗处理栅极绝缘层的表面，消除有源层和栅极绝缘层接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性；在栅极绝缘层上使用氧等离子体清洗，可以形成致密的氧化层，绝缘性能更好，使TFT的稳定性更好。
所述的显示基板中，所述氧化层的厚度为1至20埃米。通过控制等离子体处理的时间，可以根据需要的性能需求控制所述氧化层的厚度；所述氧化层的厚度的优选范围为1至20埃米。
本发明还公开了一种显示装置，包括第一基板和第二基板，所述第一基板包括如上所述的显示基板。
在显示基板工艺生产流程中，显示基板器件稳定对产品稳定性尤为重要。阈值电压是用来评估器件的稳定性最重要的评估标准参数。显示基板的栅极绝缘层与有源层界面积累大量的正电荷形成一个内电场，内电场会吸引沟道电子于栅极绝缘层上形成导电沟道，阈值电压小于零，器件需要很高的栅源电压负电压使显示基板器件关闭，影响器件的稳定性。本方案采用等离子体清洗处理栅极绝缘层和有源层的接触面，消除该接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性。
附图说明
所包括的附图用来提供对本申请实施例的进一步的理解，其构成了说明书的一部分，用于例示本申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1a到图1g是本发明实施例一种显示基板形成的示意图；
图2是本发明实施例一种显示装置的示意图；
图3是本发明实施例未经过处理的离子分布示意图；
图4是本发明实施例经过处理后的离子分布示意图。
具体实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本发明的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和可选的实施例对本发明作进一步说明。
如图1a至图1g所示，本发明实施例公布了一种显示基板的制作方法，包括：衬底104，在所述衬底104上形成栅极110、栅极绝缘层120、有源层130、源极140和漏极150的步骤；其中，在有源层130和栅极绝缘层120的接触面进行离子注入。
在显示基板103工艺生产流程中，显示基板103器件稳定对产品稳定性尤为重要。阈值电压是用来评估器件的稳定性最重要的评估标准参数。显示基板103的栅极绝缘层120与有源层130界面积累大量的正电荷形成一个内电场，内电场会吸引沟道电子于栅极绝缘层120上形成导电沟道，阈值电压小于零，器件需要很高的栅源电压负电压使显示基板103器件关闭，影响器件的稳定性。本方案采用等离子体清洗处理栅极绝缘层120和有源层130的接触面，消除该接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性。
其中，该显示基板103可以是薄膜晶体管开关(Thin Film Transistor，TFT)。
本实施例可选的，所述形成栅极110、栅极绝缘层120、有源层130、源极140和漏极150的步骤包括：
形成第一金属层，并将第一金属层两侧的区域蚀刻掉，形成栅极110；
形成栅极绝缘层120，所述栅极绝缘层120覆盖栅极110；
在栅极绝缘层120上进行等离子体清洗；
在栅极绝缘层120上形成有源层130；
有源层130包括非晶硅层131和掺杂层132，掺杂层132设置在非晶硅层131上；
在有源层130上分别形成源极140和漏极150；
在源极140和漏极150上形成钝化层160和透明电极层170，透明电极层170通过接触孔与漏极150连接。
本方案采用等离子体清洗处理栅极绝缘层120的表面，消除有源层130和栅极绝缘层120接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性；在栅极绝缘层120上进行等离子体清洗，相对于在有源层130的沟道内进行离子注入，栅极绝缘层120的介电性更稳定，使得TFT更稳定，性能更好。
本实施例可选的，所述在栅极绝缘层120上进行离子注入的步骤中，在栅极绝缘层120上使用氨气进行等离子体清洗。本方案采用氨气进行等离子体清洗处理栅极绝缘层120的表面，消除有源层130和栅极绝缘层120接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性。
参考图1c，本实施例可选的，所述在栅极绝缘层120上进行离子注入的步骤中，在栅极绝缘层120上使用氧气进行等离子体清洗。在栅极绝缘层120上使用氧气进行等离子体清洗，一方面是可以形成致密的氧化硅绝缘层，使TFT的稳定性更好，二是氧等离子体产生的氧负离子同样可以消除界面积累的正电荷，降低正电荷形成内电场的大小，从而使阈值电压大于零，从而提高器件的稳定性。
可选的，所述在栅极绝缘层上进行等离子体清洗的步骤中，在栅极绝缘层上，先使用氢气进行第一次等离子体清洗；之后，再用一氧化二氮或氧气进行第二次等离子体清洗。本方案先采用氢气进行等离子体清洗，可显著降低正电荷形成的内电场大小；但氢离子残留过多，会影响TFT性能，使得后续工艺中膜层表面会形成较多孔洞；之后再使用一氧化二氮或氧气进行第二次等离子体清洗，在进一步降低正电荷形成的内电场大小的同时，还可以对第一次等离子清洗步骤中的残留的氢离子进行进一步清洗，使得显示基板的性能更加稳定。
本实施例可选的，所述形成栅极、栅极绝缘层120、有源层130、源极140和漏极150的步骤包括：
形成源极140和漏极150；
在源极140和漏极150上形成有源层130；
在有源层130上进行等离子体清洗；
在有源层130上形成栅极绝缘层120；
在栅极绝缘层120上形成栅极。
对于顶栅型的TFT结构，本方案采用等离子体清洗处理有源层130的表面，可以很有效的消除有源层130和栅极绝缘层120接触面积累的正电荷，降低正电荷形成内电场的大小，阈值电压大于零，从而提高器件的稳定性。
作为本发明的另一实施例，参考图1a至图1g所示，公开了一种显示面板，其包括阵列基板和对置的公共基板，所述的阵列基板上设有多个显示基板103，所述显示基板103包括：层叠设置的栅极、栅极绝缘层120、有源层130、源极140和漏极150；其中，所述的有源层130和栅极绝缘层120的接触面经等离子体清洗处理。
本实施例可选的，所述的显示基板103中；所述栅极绝缘层120设置在所述栅极上；所述栅极绝缘层120上有经氧离子清洗后形成的一层氧化层；所述有源层130设置在所述栅极绝缘层120上：所述源极140和漏极150，分别设置在有源层130的上表面两侧；所述钝化层160和透明电极层170，设置漏极150和源极140上。在栅极绝缘层120上使用氧等离子体进行清洗，可以形成致密的氧化硅绝缘层，绝缘性能更好，使TFT的稳定性更好。
所述的显示基板103中，所述氧化层的厚度为1至20埃米。通过控制等离子体处理的时间，可以根据需要的性能需求控制所述氧化层的厚度；所述氧化层的厚度的优选范围为1至20埃米。
本实施例可选的，所述的显示基板103中：所述栅极绝缘层120设置在所述栅极上；所述栅极绝缘层120上还可以通过氨气或一氧化二氮等其他气体进行等离子体清洗；所述有源层130设置在所述栅极绝缘层120上；所述源极140和漏极150，分别设置在有源层130上方的两侧；所述钝化层160和透明电极层170，设置漏极150和源极140上。
作为本发明的另一实施例，参考图2、图3和图4所示，公开了一种显示装置100，其包括第一基板101如阵列基板，和对置的第二基板102如公共基板，所述阵列基板上设有多个上述的显示基板103。
本发明的面板可以是TN面板(全称为Twisted Nematic，即扭曲向列型面板)、IPS面板(In-PlaneSwitching，平面转换)、VA面板(Multi-domain Vertical Alignment，多象限垂直配向技术)，当然，也可以是其他类型的面板，适用即可。
以上内容是结合具体的可选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。

Claims (3)

1.一种显示基板的制作方法，其特征在于，包括步骤：
衬底；
在衬底上形成第一金属层，并将第一金属层两侧的区域蚀刻掉，形成栅极；
形成栅极绝缘层，所述栅极绝缘层覆盖栅极；
在栅极绝缘层上使用氢气进行第一次等离子体清洗，再使用氧气进行第二次等离子体清洗，并在栅极绝缘层上形成厚度在1至20埃米之间的氧化硅绝缘层；
在栅极绝缘层上形成有源层；
有源层包括非晶硅层和掺杂层，掺杂层设置在非晶硅层上；
在有源层上分别形成源极和漏极；
在源极和漏极上形成钝化层和透明电极层。
2.一种如权利要求1所述显示基板的制作方法所制作出的的显示基板，其特征在于，包括：
层叠设置的栅极、栅极绝缘层、有源层、源极、漏极、钝化层和透明电极层；
所述栅极绝缘层设置在所述栅极上；
所述栅极绝缘层有经氧离子清洗后形成的一层氧化层；
所述有源层设置在所述栅极绝缘层上；
所述源极和漏极，分别设置在所述有源层的上表面两侧；
所述钝化层和透明电极层，设置在所述漏极和源极上；
其中，所述有源层和栅极绝缘层的接触面先氢气进行第一次等离子体清洗，再经氧气进行等离子体清洗处理，在栅极绝缘层上形成厚度在1至20埃米之间的氧化硅绝缘层。
3.一种显示装置，其特征在于，包括显示面板，所述显示面板包括第一基板和第二基板，所述第一基板包括如权利要求1所述的显示基板。
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