TWI553420B - Exposure apparatus, exposure method, and device manufacturing method - Google Patents
Exposure apparatus, exposure method, and device manufacturing method Download PDFInfo
- Publication number
- TWI553420B TWI553420B TW101148294A TW101148294A TWI553420B TW I553420 B TWI553420 B TW I553420B TW 101148294 A TW101148294 A TW 101148294A TW 101148294 A TW101148294 A TW 101148294A TW I553420 B TWI553420 B TW I553420B
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- Prior art keywords
- liquid
- substrate
- flow path
- optical system
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- Prior art date
Links
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
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- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/522—Projection optics
- G03B27/525—Projection optics for slit exposure
- G03B27/528—Projection optics for slit exposure in which the projection optics remain stationary
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004000236 | 2004-01-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201319764A TW201319764A (zh) | 2013-05-16 |
| TWI553420B true TWI553420B (zh) | 2016-10-11 |
Family
ID=34746939
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101148294A TWI553420B (zh) | 2004-01-05 | 2005-01-05 | Exposure apparatus, exposure method, and device manufacturing method |
| TW106128330A TW201743139A (zh) | 2004-01-05 | 2005-01-05 | 曝光裝置、曝光方法及元件製造方法 |
| TW105112403A TWI617896B (zh) | 2004-01-05 | 2005-01-05 | 流路形成構件、曝光裝置、曝光方法及元件製造方法 |
| TW094100209A TWI403853B (zh) | 2004-01-05 | 2005-01-05 | Exposure apparatus, exposure method, and device manufacturing method |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106128330A TW201743139A (zh) | 2004-01-05 | 2005-01-05 | 曝光裝置、曝光方法及元件製造方法 |
| TW105112403A TWI617896B (zh) | 2004-01-05 | 2005-01-05 | 流路形成構件、曝光裝置、曝光方法及元件製造方法 |
| TW094100209A TWI403853B (zh) | 2004-01-05 | 2005-01-05 | Exposure apparatus, exposure method, and device manufacturing method |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US8064044B2 (enExample) |
| EP (3) | EP2199859B1 (enExample) |
| JP (9) | JP4774735B2 (enExample) |
| KR (8) | KR101748504B1 (enExample) |
| AT (1) | ATE467902T1 (enExample) |
| DE (1) | DE602004027162D1 (enExample) |
| TW (4) | TWI553420B (enExample) |
| WO (1) | WO2005067013A1 (enExample) |
Families Citing this family (99)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101484435B1 (ko) | 2003-04-09 | 2015-01-19 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| EP1611482B1 (en) * | 2003-04-10 | 2015-06-03 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| KR20190007532A (ko) | 2003-04-11 | 2019-01-22 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
| TWI628698B (zh) | 2003-10-28 | 2018-07-01 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
| US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI612338B (zh) | 2003-11-20 | 2018-01-21 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
| ATE467902T1 (de) | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| EP2037489A3 (en) * | 2004-01-15 | 2010-01-06 | Nikon Corporation | Exposure apparatus and device producing method |
| TWI614795B (zh) | 2004-02-06 | 2018-02-11 | Nikon Corporation | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
| US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005119742A1 (ja) * | 2004-06-04 | 2005-12-15 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| CN103439863B (zh) * | 2004-06-09 | 2016-01-06 | 株式会社尼康 | 曝光装置、曝光方法、元件制造方法及维护方法 |
| EP2637061B1 (en) * | 2004-06-09 | 2018-07-18 | Nikon Corporation | Exposure apparatus, exposure method and method for producing a device |
| US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8373843B2 (en) * | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| KR101505756B1 (ko) | 2004-06-10 | 2015-03-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| KR101178755B1 (ko) | 2004-06-10 | 2012-08-31 | 가부시키가이샤 니콘 엔지니어링 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US8508713B2 (en) | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8717533B2 (en) | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
| KR101259190B1 (ko) | 2004-06-17 | 2013-04-29 | 가부시키가이샤 니콘 | 액침 리소그래피 렌즈에 대한 유체 압력 보상 |
| WO2006007111A2 (en) | 2004-07-01 | 2006-01-19 | Nikon Corporation | A dynamic fluid control system for immersion lithography |
| US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG188899A1 (en) * | 2004-09-17 | 2013-04-30 | Nikon Corp | Substrate holding device, exposure apparatus, and device manufacturing method |
| US7379155B2 (en) | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7423720B2 (en) | 2004-11-12 | 2008-09-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4720747B2 (ja) * | 2004-12-02 | 2011-07-13 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
| KR101427056B1 (ko) | 2005-01-31 | 2014-08-05 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4544303B2 (ja) * | 2005-03-30 | 2010-09-15 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
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