ATE467902T1 - Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren - Google Patents

Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren

Info

Publication number
ATE467902T1
ATE467902T1 AT04808163T AT04808163T ATE467902T1 AT E467902 T1 ATE467902 T1 AT E467902T1 AT 04808163 T AT04808163 T AT 04808163T AT 04808163 T AT04808163 T AT 04808163T AT E467902 T1 ATE467902 T1 AT E467902T1
Authority
AT
Austria
Prior art keywords
liquid
substrate
exposure
flow passage
forming member
Prior art date
Application number
AT04808163T
Other languages
German (de)
English (en)
Inventor
Hiroyuki Nagasaka
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE467902T1 publication Critical patent/ATE467902T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/522—Projection optics
    • G03B27/525—Projection optics for slit exposure
    • G03B27/528—Projection optics for slit exposure in which the projection optics remain stationary
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT04808163T 2004-01-05 2004-12-27 Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren ATE467902T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004000236 2004-01-05
PCT/JP2004/019813 WO2005067013A1 (ja) 2004-01-05 2004-12-27 露光装置、露光方法及びデバイス製造方法

Publications (1)

Publication Number Publication Date
ATE467902T1 true ATE467902T1 (de) 2010-05-15

Family

ID=34746939

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04808163T ATE467902T1 (de) 2004-01-05 2004-12-27 Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren

Country Status (8)

Country Link
US (4) US8064044B2 (enExample)
EP (3) EP2199859B1 (enExample)
JP (9) JP4774735B2 (enExample)
KR (8) KR101748504B1 (enExample)
AT (1) ATE467902T1 (enExample)
DE (1) DE602004027162D1 (enExample)
TW (4) TWI553420B (enExample)
WO (1) WO2005067013A1 (enExample)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101484435B1 (ko) 2003-04-09 2015-01-19 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
EP1611482B1 (en) * 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR20190007532A (ko) 2003-04-11 2019-01-22 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
TWI616932B (zh) 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
TWI628698B (zh) 2003-10-28 2018-07-01 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI612338B (zh) 2003-11-20 2018-01-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
ATE467902T1 (de) 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
EP2037489A3 (en) * 2004-01-15 2010-01-06 Nikon Corporation Exposure apparatus and device producing method
TWI614795B (zh) 2004-02-06 2018-02-11 Nikon Corporation 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005119742A1 (ja) * 2004-06-04 2005-12-15 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
CN103439863B (zh) * 2004-06-09 2016-01-06 株式会社尼康 曝光装置、曝光方法、元件制造方法及维护方法
EP2637061B1 (en) * 2004-06-09 2018-07-18 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
US20070139628A1 (en) * 2004-06-10 2007-06-21 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8373843B2 (en) * 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101505756B1 (ko) 2004-06-10 2015-03-26 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR101178755B1 (ko) 2004-06-10 2012-08-31 가부시키가이샤 니콘 엔지니어링 노광 장치, 노광 방법 및 디바이스 제조 방법
US8508713B2 (en) 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8717533B2 (en) 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7481867B2 (en) 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
KR101259190B1 (ko) 2004-06-17 2013-04-29 가부시키가이샤 니콘 액침 리소그래피 렌즈에 대한 유체 압력 보상
WO2006007111A2 (en) 2004-07-01 2006-01-19 Nikon Corporation A dynamic fluid control system for immersion lithography
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG188899A1 (en) * 2004-09-17 2013-04-30 Nikon Corp Substrate holding device, exposure apparatus, and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4720747B2 (ja) * 2004-12-02 2011-07-13 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR101427056B1 (ko) 2005-01-31 2014-08-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4544303B2 (ja) * 2005-03-30 2010-09-15 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
TW200644079A (en) * 2005-03-31 2006-12-16 Nikon Corp Exposure apparatus, exposure method, and device production method
US7411654B2 (en) * 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006118108A1 (ja) * 2005-04-27 2006-11-09 Nikon Corporation 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
JP4858062B2 (ja) * 2005-04-27 2012-01-18 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
JP4508028B2 (ja) 2005-08-01 2010-07-21 ソニー株式会社 情報処理装置，情報処理方法およびコンピュータプログラム
WO2007031182A1 (de) * 2005-09-13 2007-03-22 Carl Zeiss Smt Ag Mikrolithographische projektionsbelichtungsanlage und verfahren zur einstellung einer optischen abbildungseigenschaft derselben
JP4125315B2 (ja) 2005-10-11 2008-07-30 キヤノン株式会社 露光装置及びデバイス製造方法
JP2007127939A (ja) * 2005-11-07 2007-05-24 Nikon Corp 液浸顕微鏡装置
JP2007133077A (ja) * 2005-11-09 2007-05-31 Nikon Corp 液浸対物レンズ鏡筒および液浸顕微鏡
WO2007055373A1 (ja) * 2005-11-14 2007-05-18 Nikon Corporation 液体回収部材、露光装置、露光方法、及びデバイス製造方法
JP2007194484A (ja) 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
JP2007201252A (ja) * 2006-01-27 2007-08-09 Canon Inc 露光装置及びデバイス製造方法
US8045134B2 (en) * 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US8027019B2 (en) 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1843206B1 (en) * 2006-04-06 2012-09-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701551B2 (en) * 2006-04-14 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006023876A1 (de) * 2006-05-19 2007-11-22 Carl Zeiss Smt Ag Optische Abbildungseinrichtung
US8027023B2 (en) 2006-05-19 2011-09-27 Carl Zeiss Smt Gmbh Optical imaging device and method for reducing dynamic fluctuations in pressure difference
JP2008034801A (ja) * 2006-06-30 2008-02-14 Canon Inc 露光装置およびデバイス製造方法
US20080043211A1 (en) * 2006-08-21 2008-02-21 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography
JP2008124194A (ja) * 2006-11-10 2008-05-29 Canon Inc 液浸露光方法および液浸露光装置
SG143137A1 (en) 2006-11-13 2008-06-27 Asml Netherlands Bv Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
US20080158531A1 (en) * 2006-11-15 2008-07-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9632425B2 (en) * 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8004651B2 (en) 2007-01-23 2011-08-23 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
JP4366407B2 (ja) * 2007-02-16 2009-11-18 キヤノン株式会社 露光装置及びデバイス製造方法
JP2008300771A (ja) * 2007-06-04 2008-12-11 Nikon Corp 液浸露光装置、デバイス製造方法、及び露光条件の決定方法
US9025126B2 (en) * 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
NL1035757A1 (nl) * 2007-08-02 2009-02-03 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
KR101562073B1 (ko) 2007-10-16 2015-10-21 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
EP2179329A1 (en) 2007-10-16 2010-04-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
KR101695034B1 (ko) 2008-05-28 2017-01-10 가부시키가이샤 니콘 공간 광 변조기의 검사 장치, 조명 광학계, 노광 장치, 검사 방법, 조명 광학계의 조정 방법, 조명 방법, 노광 방법, 및 디바이스 제조 방법
NL2003225A1 (nl) * 2008-07-25 2010-01-26 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
NL2003362A (en) 2008-10-16 2010-04-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US20100328637A1 (en) * 2008-12-04 2010-12-30 Nikon Corporation Exposure apparatus, exposing method and device fabricating method
US8896806B2 (en) * 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP2221669A3 (en) * 2009-02-19 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
NL2004547A (en) 2009-05-14 2010-11-18 Asml Netherlands Bv An immersion lithographic apparatus and a device manufacturing method.
US8619231B2 (en) 2009-05-21 2013-12-31 Nikon Corporation Cleaning method, exposure method, and device manufacturing method
EP2264529A3 (en) * 2009-06-16 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus
NL2005951A (en) * 2010-02-02 2011-08-03 Asml Netherlands Bv Lithographic apparatus and a device manufacturing method.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US20120012191A1 (en) * 2010-07-16 2012-01-19 Nikon Corporation Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
JP2013004942A (ja) 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
NL2009899A (en) * 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
US20130169944A1 (en) * 2011-12-28 2013-07-04 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, program, and recording medium
US9352073B2 (en) 2013-01-22 2016-05-31 Niko Corporation Functional film
US9057955B2 (en) 2013-01-22 2015-06-16 Nikon Corporation Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
WO2014132923A1 (ja) 2013-02-28 2014-09-04 株式会社ニコン 摺動膜、摺動膜が形成された部材、及びその製造方法
US10001712B2 (en) 2014-07-25 2018-06-19 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
JP7093221B2 (ja) * 2018-04-26 2022-06-29 キヤノン株式会社 光学装置の調整方法、光学装置の製造方法、および、物品製造方法
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CN113189849B (zh) * 2021-04-22 2023-08-11 中国科学院光电技术研究所 一种近场光刻浸没系统及其浸没单元和接口模组
WO2024090384A1 (ja) * 2022-10-24 2024-05-02 株式会社荏原製作所 基板処理装置及び基板処理方法

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (enExample) *
US32795A (en) * 1861-07-09 Hay-rake
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) * 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2737010B2 (ja) * 1989-08-01 1998-04-08 キヤノン株式会社 露光装置
EP0422814B1 (en) * 1989-10-02 1999-03-17 Canon Kabushiki Kaisha Exposure apparatus
JP2897355B2 (ja) * 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP2714502B2 (ja) * 1991-09-18 1998-02-16 キヤノン株式会社 移動ステージ装置
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
US5699145A (en) * 1993-07-14 1997-12-16 Nikon Corporation Scanning type exposure apparatus
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) * 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH09102453A (ja) 1995-10-03 1997-04-15 Nikon Corp 基板保持部材及び露光装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
AU5067898A (en) * 1996-11-28 1998-06-22 Nikon Corporation Aligner and method for exposure
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
WO1998028665A1 (en) * 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JPH11204390A (ja) 1998-01-14 1999-07-30 Canon Inc 半導体製造装置およびデバイス製造方法
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
US6293799B1 (en) * 1998-11-10 2001-09-25 Walker, Ii Randall L. Method of applying pigmented material to a screen to create an artistic image and the resulting pigmented screen
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US6969441B2 (en) * 2000-05-15 2005-11-29 Kimberly-Clark Worldwide, Inc. Method and apparatus for producing laminated articles
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
KR100887360B1 (ko) 2001-01-23 2009-03-06 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
JP2002343759A (ja) * 2001-05-21 2002-11-29 Tokyo Electron Ltd 液処理装置および液処理方法
JP3907448B2 (ja) * 2001-11-07 2007-04-18 キヤノン株式会社 ショットレイアウト作成方法
JP2003197506A (ja) 2001-12-27 2003-07-11 Nikon Corp 位置検出方法、露光方法及びデバイス製造方法
WO2003095706A2 (en) 2002-05-07 2003-11-20 Memgen Corporation Electrochemically fabricated hermetically sealed microstructures
JP2003338448A (ja) 2002-05-21 2003-11-28 Nikon Corp 位置計測方法と位置計測装置、及び露光方法と露光装置並びにマーク計測方法
JP4137521B2 (ja) 2002-05-27 2008-08-20 株式会社ニコンシステム 装置管理方法及び露光方法、リソグラフィシステム及びプログラム
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
US20040055803A1 (en) 2002-09-24 2004-03-25 Patmont Motor Werks Variable speed transmission for scooter
TW559895B (en) * 2002-09-27 2003-11-01 Taiwan Semiconductor Mfg Exposure system and exposure method thereof
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101713932B (zh) * 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
CN101382738B (zh) * 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
CN101872135B (zh) * 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
CN103383527B (zh) 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
EP1611482B1 (en) 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
JP2004320016A (ja) * 2003-04-11 2004-11-11 Nikon Corp 液浸リソグラフィシステム
TWI470671B (zh) * 2003-05-23 2015-01-21 尼康股份有限公司 Exposure method and exposure apparatus, and device manufacturing method
JP4720106B2 (ja) * 2003-05-23 2011-07-13 株式会社ニコン 露光方法、並びにデバイス製造方法
KR101520591B1 (ko) * 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
CN101436003B (zh) 2003-06-19 2011-08-17 株式会社尼康 曝光装置及器件制造方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006417A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
DE602004030247D1 (de) * 2003-07-09 2011-01-05 Nippon Kogaku Kk Belichtungsvorrichtung und verfahren zur bauelementherstellung
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
EP1524557A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP2267536B1 (en) * 2003-10-28 2017-04-19 ASML Netherlands B.V. Lithographic apparatus
EP1679738A4 (en) * 2003-10-28 2008-08-06 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
JP4513534B2 (ja) * 2003-12-03 2010-07-28 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
ATE467902T1 (de) 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
US8111373B2 (en) * 2004-03-25 2012-02-07 Nikon Corporation Exposure apparatus and device fabrication method
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7057702B2 (en) * 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4625673B2 (ja) * 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
US7265813B2 (en) * 2004-12-28 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8289497B2 (en) * 2008-03-18 2012-10-16 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography

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