JP5609899B2 - 露光装置、ステージ制御方法、及びデバイス製造方法 - Google Patents
露光装置、ステージ制御方法、及びデバイス製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/522—Projection optics
- G03B27/525—Projection optics for slit exposure
- G03B27/528—Projection optics for slit exposure in which the projection optics remain stationary
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Description
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
り、液体LQの流出を防止するとともに、液浸領域AR2の液体LQの不足を補い、常に液浸領域AR2を液体LQで満たすことができる。そして、予備液浸領域AR3が形成される領域、すなわち壁部131に囲まれた領域は、全領域が完全に液体LQで満たされないので、液浸領域AR2から予備液浸領域AR3に回収された液体LQが壁部131の外側に漏れだすことなく、壁部131に囲まれた領域内に留まることができる。
Claims (8)
- 投影光学系の像面側に液浸領域を形成するとともに、基板の表面の一部を覆う前記液浸領域の液体を介して前記基板に露光光を照射する露光装置であって、
前記基板の表面が対向するように配置された液体回収口を有し、前記液浸領域を形成するための流路形成部材と、
前記投影光学系と前記流路形成部材の下方で移動するステージと、
制御装置と、を備え、
前記ステージは、前記液体に対して撥液性の表面を有し、
前記制御装置は、前記投影光学系の像面側に前記液浸領域が形成されている状態で、前記ステージを第1位置から第2位置へ移動させるときに、前記ステージを、前記第1位置から第1中継位置へ移動させ、前記第1中継位置から第2中継位置へ移動させ、前記第2中継位置から前記第2位置へ移動させ、
前記第1中継位置から前記第2中継位置への前記ステージの移動において、前記液浸領域は、前記撥液性の表面上を移動する露光装置。 - 前記流路形成部材は、前記露光光の光路を囲むように配置される請求項1に記載の露光装置。
- 前記流路形成部材は、前記基板の表面が対向するように設けられた液体供給口を有し、
前記液体回収口は、前記液体供給口を囲むように設けられている請求項1または2に記載の露光装置。 - 露光処理工程を含むデバイス製造方法であって、
前記露光処理工程では、請求項1〜3のいずれか一項に記載の露光装置を用いて基板が露光されるデバイス製造方法。 - 投影光学系の像面側に液浸領域を形成するとともに、基板の表面の一部を覆う前記液浸領域の液体を介して前記基板に露光光を照射する露光装置で用いられるステージ制御方法であって、
前記液浸領域が形成されている状態で、前記投影光学系の下方で第1位置から第2位置へステージを移動することを含み、
前記第1位置から前記第2位置への前記ステージの移動は、前記第1位置から前記第1中継位置への移動と、前記第1中継位置から第2中継位置への移動と、前記第2中継位置から前記第2位置への移動を含み、
前記第1中継位置から前記第2中継位置への前記ステージの移動において、前記液浸領域が前記ステージの撥液性の表面上を移動するように、前記第1中継位置と前記第2中継位置を介して、前記第1位置から前記第2位置へ前記ステージを移動するステージ制御方法。 - 前記露光装置は、前記基板の表面が対向するように配置された液体回収口を有し、前記液浸領域を形成するための流路形成部材を備える請求項5に記載のステージ制御方法。
- 前記流路形成部材は、前記露光光の光路を囲むように配置される請求項6に記載のステージ制御方法。
- 前記流路形成部材は、前記基板の表画が対向するように設けられた液体供給口を有し、
前記液体回収口は、前記液体供給口を囲むように設けられている請求項6または7に記載のステージ制御方法。
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JP4625673B2 (ja) * | 2004-10-15 | 2011-02-02 | 株式会社東芝 | 露光方法及び露光装置 |
US7265813B2 (en) | 2004-12-28 | 2007-09-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8289497B2 (en) * | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
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JP2014197714A (ja) * | 2004-01-05 | 2014-10-16 | 株式会社ニコン | 露光装置、ステージ制御方法、及びデバイス製造方法 |
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