JP4774735B2 - 露光装置、露光方法及びデバイス製造方法 - Google Patents

露光装置、露光方法及びデバイス製造方法 Download PDF

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Publication number
JP4774735B2
JP4774735B2 JP2004375494A JP2004375494A JP4774735B2 JP 4774735 B2 JP4774735 B2 JP 4774735B2 JP 2004375494 A JP2004375494 A JP 2004375494A JP 2004375494 A JP2004375494 A JP 2004375494A JP 4774735 B2 JP4774735 B2 JP 4774735B2
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Prior art keywords
liquid
substrate
exposure
optical system
recovery
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Expired - Fee Related
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JP2004375494A
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Japanese (ja)
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JP2005223315A (ja
Inventor
博之 長坂
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
JP2004375494A 2004-01-05 2004-12-27 露光装置、露光方法及びデバイス製造方法 Expired - Fee Related JP4774735B2 (ja)

Priority Applications (1)

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JP2004375494A JP4774735B2 (ja) 2004-01-05 2004-12-27 露光装置、露光方法及びデバイス製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004000236 2004-01-05
JP2004000236 2004-01-05
JP2004375494A JP4774735B2 (ja) 2004-01-05 2004-12-27 露光装置、露光方法及びデバイス製造方法

Related Child Applications (1)

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JP2010180221A Division JP5077400B2 (ja) 2004-01-05 2010-08-11 露光装置、露光方法、及びデバイス製造方法

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JP2005223315A JP2005223315A (ja) 2005-08-18
JP4774735B2 true JP4774735B2 (ja) 2011-09-14

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JP2004375494A Expired - Fee Related JP4774735B2 (ja) 2004-01-05 2004-12-27 露光装置、露光方法及びデバイス製造方法
JP2010180221A Expired - Fee Related JP5077400B2 (ja) 2004-01-05 2010-08-11 露光装置、露光方法、及びデバイス製造方法
JP2010246602A Expired - Fee Related JP5488404B2 (ja) 2004-01-05 2010-11-02 流路形成部材、露光装置、露光方法、及びデバイス製造方法
JP2012012100A Expired - Fee Related JP5549946B2 (ja) 2004-01-05 2012-01-24 露光装置、露光方法、ステージ制御方法、及びデバイス製造方法
JP2012015913A Expired - Fee Related JP5609899B2 (ja) 2004-01-05 2012-01-27 露光装置、ステージ制御方法、及びデバイス製造方法
JP2013223332A Expired - Fee Related JP5713082B2 (ja) 2004-01-05 2013-10-28 露光装置、露光方法、及びデバイス製造方法
JP2014146256A Expired - Fee Related JP5895979B2 (ja) 2004-01-05 2014-07-16 露光装置、ステージ制御方法、及びデバイス製造方法
JP2014217182A Expired - Lifetime JP5862746B2 (ja) 2004-01-05 2014-10-24 流路形成部材、露光装置、露光方法及びデバイス製造方法
JP2015159807A Expired - Lifetime JP6119810B2 (ja) 2004-01-05 2015-08-13 露光装置及びデバイス製造方法

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JP2010180221A Expired - Fee Related JP5077400B2 (ja) 2004-01-05 2010-08-11 露光装置、露光方法、及びデバイス製造方法
JP2010246602A Expired - Fee Related JP5488404B2 (ja) 2004-01-05 2010-11-02 流路形成部材、露光装置、露光方法、及びデバイス製造方法
JP2012012100A Expired - Fee Related JP5549946B2 (ja) 2004-01-05 2012-01-24 露光装置、露光方法、ステージ制御方法、及びデバイス製造方法
JP2012015913A Expired - Fee Related JP5609899B2 (ja) 2004-01-05 2012-01-27 露光装置、ステージ制御方法、及びデバイス製造方法
JP2013223332A Expired - Fee Related JP5713082B2 (ja) 2004-01-05 2013-10-28 露光装置、露光方法、及びデバイス製造方法
JP2014146256A Expired - Fee Related JP5895979B2 (ja) 2004-01-05 2014-07-16 露光装置、ステージ制御方法、及びデバイス製造方法
JP2014217182A Expired - Lifetime JP5862746B2 (ja) 2004-01-05 2014-10-24 流路形成部材、露光装置、露光方法及びデバイス製造方法
JP2015159807A Expired - Lifetime JP6119810B2 (ja) 2004-01-05 2015-08-13 露光装置及びデバイス製造方法

Country Status (8)

Country Link
US (4) US8064044B2 (enExample)
EP (3) EP2199859B1 (enExample)
JP (9) JP4774735B2 (enExample)
KR (8) KR101561727B1 (enExample)
AT (1) ATE467902T1 (enExample)
DE (1) DE602004027162D1 (enExample)
TW (4) TWI617896B (enExample)
WO (1) WO2005067013A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2014197714A (ja) * 2004-01-05 2014-10-16 株式会社ニコン 露光装置、ステージ制御方法、及びデバイス製造方法

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