KR101748504B1 - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR101748504B1
KR101748504B1 KR1020157011338A KR20157011338A KR101748504B1 KR 101748504 B1 KR101748504 B1 KR 101748504B1 KR 1020157011338 A KR1020157011338 A KR 1020157011338A KR 20157011338 A KR20157011338 A KR 20157011338A KR 101748504 B1 KR101748504 B1 KR 101748504B1
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South Korea
Prior art keywords
liquid
substrate
flow path
stage
optical system
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Expired - Fee Related
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KR1020157011338A
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English (en)
Korean (ko)
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KR20150055096A (ko
Inventor
히로유키 나가사카
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가부시키가이샤 니콘
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • G03B27/522Projection optics
    • G03B27/525Projection optics for slit exposure
    • G03B27/528Projection optics for slit exposure in which the projection optics remain stationary
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020157011338A 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법 Expired - Fee Related KR101748504B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-000236 2004-01-05
JP2004000236 2004-01-05
PCT/JP2004/019813 WO2005067013A1 (ja) 2004-01-05 2004-12-27 露光装置、露光方法及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117025142A Division KR101561727B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177015811A Division KR101911681B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20150055096A KR20150055096A (ko) 2015-05-20
KR101748504B1 true KR101748504B1 (ko) 2017-06-16

Family

ID=34746939

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020187030370A Ceased KR20180117228A (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020117025142A Expired - Fee Related KR101561727B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020157011338A Expired - Fee Related KR101748504B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020137017236A Expired - Fee Related KR101440743B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177015811A Expired - Fee Related KR101911681B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127025529A Expired - Fee Related KR101324810B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147014875A Expired - Fee Related KR101636632B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020067008813A Expired - Fee Related KR101266648B1 (ko) 2004-01-05 2006-05-04 노광 장치, 노광 방법 및 디바이스 제조 방법

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1020187030370A Ceased KR20180117228A (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020117025142A Expired - Fee Related KR101561727B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020137017236A Expired - Fee Related KR101440743B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020177015811A Expired - Fee Related KR101911681B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020127025529A Expired - Fee Related KR101324810B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147014875A Expired - Fee Related KR101636632B1 (ko) 2004-01-05 2004-12-27 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020067008813A Expired - Fee Related KR101266648B1 (ko) 2004-01-05 2006-05-04 노광 장치, 노광 방법 및 디바이스 제조 방법

Country Status (8)

Country Link
US (4) US8064044B2 (enExample)
EP (3) EP3376523A1 (enExample)
JP (9) JP4774735B2 (enExample)
KR (8) KR20180117228A (enExample)
AT (1) ATE467902T1 (enExample)
DE (1) DE602004027162D1 (enExample)
TW (4) TWI403853B (enExample)
WO (1) WO2005067013A1 (enExample)

Families Citing this family (99)

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US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
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US20070139628A1 (en) * 2004-06-10 2007-06-21 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
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US7481867B2 (en) 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
JP4623095B2 (ja) 2004-06-17 2011-02-02 株式会社ニコン 液浸リソグラフィレンズの流体圧力補正
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SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
CN101681123B (zh) 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
SG185313A1 (en) 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
CN105606344B (zh) 2008-05-28 2019-07-30 株式会社尼康 照明光学系统、照明方法、曝光装置以及曝光方法
NL2003225A1 (nl) * 2008-07-25 2010-01-26 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
NL2003362A (en) 2008-10-16 2010-04-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US20100328637A1 (en) * 2008-12-04 2010-12-30 Nikon Corporation Exposure apparatus, exposing method and device fabricating method
US8896806B2 (en) * 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
EP2221669A3 (en) * 2009-02-19 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
NL2004547A (en) 2009-05-14 2010-11-18 Asml Netherlands Bv An immersion lithographic apparatus and a device manufacturing method.
US8619231B2 (en) * 2009-05-21 2013-12-31 Nikon Corporation Cleaning method, exposure method, and device manufacturing method
EP2264529A3 (en) * 2009-06-16 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus
NL2005951A (en) * 2010-02-02 2011-08-03 Asml Netherlands Bv Lithographic apparatus and a device manufacturing method.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US20120012191A1 (en) * 2010-07-16 2012-01-19 Nikon Corporation Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
JP2013004942A (ja) 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
NL2009899A (en) * 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
US20130169944A1 (en) * 2011-12-28 2013-07-04 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, program, and recording medium
US9057955B2 (en) 2013-01-22 2015-06-16 Nikon Corporation Functional film, liquid immersion member, method of manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
US9352073B2 (en) 2013-01-22 2016-05-31 Niko Corporation Functional film
JP5979302B2 (ja) 2013-02-28 2016-08-24 株式会社ニコン 摺動膜、摺動膜が形成された部材、及びその製造方法
US10001712B2 (en) 2014-07-25 2018-06-19 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
JP7093221B2 (ja) * 2018-04-26 2022-06-29 キヤノン株式会社 光学装置の調整方法、光学装置の製造方法、および、物品製造方法
CN110858551B (zh) * 2018-08-24 2025-02-14 禾宬科技有限公司 半导体清洗装置及方法
TWI721307B (zh) * 2018-09-21 2021-03-11 禾宬科技有限公司 半導體清洗裝置及方法
CN113189849B (zh) 2021-04-22 2023-08-11 中国科学院光电技术研究所 一种近场光刻浸没系统及其浸没单元和接口模组
TW202433199A (zh) * 2022-10-24 2024-08-16 日商荏原製作所股份有限公司 基板處理裝置及基板處理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004112108A1 (ja) * 2003-06-13 2004-12-23 Nikon Corporation 露光方法、基板ステージ、露光装置、及びデバイス製造方法

Family Cites Families (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (enExample) *
US32795A (en) 1861-07-09 Hay-rake
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) * 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2737010B2 (ja) * 1989-08-01 1998-04-08 キヤノン株式会社 露光装置
DE69033002T2 (de) * 1989-10-02 1999-09-02 Canon K.K. Belichtungsvorrichtung
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法,露光装置,並びに位置検出方法及び装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JP2714502B2 (ja) * 1991-09-18 1998-02-16 キヤノン株式会社 移動ステージ装置
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
US5699145A (en) * 1993-07-14 1997-12-16 Nikon Corporation Scanning type exposure apparatus
US6118515A (en) * 1993-12-08 2000-09-12 Nikon Corporation Scanning exposure method
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH09102453A (ja) 1995-10-03 1997-04-15 Nikon Corp 基板保持部材及び露光装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JPH11204390A (ja) 1998-01-14 1999-07-30 Canon Inc 半導体製造装置およびデバイス製造方法
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
US6293799B1 (en) 1998-11-10 2001-09-25 Walker, Ii Randall L. Method of applying pigmented material to a screen to create an artistic image and the resulting pigmented screen
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US6969441B2 (en) 2000-05-15 2005-11-29 Kimberly-Clark Worldwide, Inc. Method and apparatus for producing laminated articles
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
JP2002343759A (ja) * 2001-05-21 2002-11-29 Tokyo Electron Ltd 液処理装置および液処理方法
US20020096196A1 (en) 2001-01-23 2002-07-25 Takayuki Toshima Substrate processing apparatus and substrate processing method
JP3907448B2 (ja) * 2001-11-07 2007-04-18 キヤノン株式会社 ショットレイアウト作成方法
JP2003197506A (ja) 2001-12-27 2003-07-11 Nikon Corp 位置検出方法、露光方法及びデバイス製造方法
AU2003228973A1 (en) 2002-05-07 2003-11-11 Memgen Corporation Electrochemically fabricated hermetically sealed microstructures
JP2003338448A (ja) 2002-05-21 2003-11-28 Nikon Corp 位置計測方法と位置計測装置、及び露光方法と露光装置並びにマーク計測方法
JP4137521B2 (ja) 2002-05-27 2008-08-20 株式会社ニコンシステム 装置管理方法及び露光方法、リソグラフィシステム及びプログラム
TWI249082B (en) 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US20040055803A1 (en) 2002-09-24 2004-03-25 Patmont Motor Werks Variable speed transmission for scooter
TW559895B (en) * 2002-09-27 2003-11-01 Taiwan Semiconductor Mfg Exposure system and exposure method thereof
KR100588124B1 (ko) * 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101424881B (zh) 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
SG121818A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101036114B1 (ko) 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
CN101061429B (zh) 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
CN1771463A (zh) 2003-04-10 2006-05-10 株式会社尼康 用于沉浸光刻装置收集液体的溢出通道
JP2004320016A (ja) * 2003-04-11 2004-11-11 Nikon Corp 液浸リソグラフィシステム
JP4720106B2 (ja) * 2003-05-23 2011-07-13 株式会社ニコン 露光方法、並びにデバイス製造方法
TWI614794B (zh) 2003-05-23 2018-02-11 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
TWI543235B (zh) 2003-06-19 2016-07-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101209540B1 (ko) 2003-07-09 2012-12-07 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1643543B1 (en) 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
KR101121260B1 (ko) * 2003-10-28 2012-03-23 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스의 제조 방법
EP2267536B1 (en) 2003-10-28 2017-04-19 ASML Netherlands B.V. Lithographic apparatus
JP4513534B2 (ja) * 2003-12-03 2010-07-28 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
ATE467902T1 (de) * 2004-01-05 2010-05-15 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7057702B2 (en) * 2004-06-23 2006-06-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4625673B2 (ja) * 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
US7265813B2 (en) 2004-12-28 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8289497B2 (en) * 2008-03-18 2012-10-16 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004112108A1 (ja) * 2003-06-13 2004-12-23 Nikon Corporation 露光方法、基板ステージ、露光装置、及びデバイス製造方法

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