KR101748504B1 - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents
노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDFInfo
- Publication number
- KR101748504B1 KR101748504B1 KR1020157011338A KR20157011338A KR101748504B1 KR 101748504 B1 KR101748504 B1 KR 101748504B1 KR 1020157011338 A KR1020157011338 A KR 1020157011338A KR 20157011338 A KR20157011338 A KR 20157011338A KR 101748504 B1 KR101748504 B1 KR 101748504B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid
- substrate
- flow path
- stage
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/522—Projection optics
- G03B27/525—Projection optics for slit exposure
- G03B27/528—Projection optics for slit exposure in which the projection optics remain stationary
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2004-000236 | 2004-01-05 | ||
| JP2004000236 | 2004-01-05 | ||
| PCT/JP2004/019813 WO2005067013A1 (ja) | 2004-01-05 | 2004-12-27 | 露光装置、露光方法及びデバイス製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117025142A Division KR101561727B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177015811A Division KR101911681B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150055096A KR20150055096A (ko) | 2015-05-20 |
| KR101748504B1 true KR101748504B1 (ko) | 2017-06-16 |
Family
ID=34746939
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187030370A Ceased KR20180117228A (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020117025142A Expired - Fee Related KR101561727B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020157011338A Expired - Fee Related KR101748504B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020137017236A Expired - Fee Related KR101440743B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020177015811A Expired - Fee Related KR101911681B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020127025529A Expired - Fee Related KR101324810B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020147014875A Expired - Fee Related KR101636632B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020067008813A Expired - Fee Related KR101266648B1 (ko) | 2004-01-05 | 2006-05-04 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187030370A Ceased KR20180117228A (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020117025142A Expired - Fee Related KR101561727B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137017236A Expired - Fee Related KR101440743B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020177015811A Expired - Fee Related KR101911681B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020127025529A Expired - Fee Related KR101324810B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020147014875A Expired - Fee Related KR101636632B1 (ko) | 2004-01-05 | 2004-12-27 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| KR1020067008813A Expired - Fee Related KR101266648B1 (ko) | 2004-01-05 | 2006-05-04 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US8064044B2 (enExample) |
| EP (3) | EP3376523A1 (enExample) |
| JP (9) | JP4774735B2 (enExample) |
| KR (8) | KR20180117228A (enExample) |
| AT (1) | ATE467902T1 (enExample) |
| DE (1) | DE602004027162D1 (enExample) |
| TW (4) | TWI403853B (enExample) |
| WO (1) | WO2005067013A1 (enExample) |
Families Citing this family (99)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101547077B1 (ko) | 2003-04-09 | 2015-08-25 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| CN1771463A (zh) * | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
| EP2161621B1 (en) | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
| TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| TWI569308B (zh) | 2003-10-28 | 2017-02-01 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造 方法 |
| JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
| TWI385414B (zh) | 2003-11-20 | 2013-02-11 | 尼康股份有限公司 | 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法 |
| ATE467902T1 (de) | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| EP1705695A4 (en) * | 2004-01-15 | 2007-08-08 | Nikon Corp | EXPOSURE DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| TWI379344B (en) | 2004-02-06 | 2012-12-11 | Nikon Corp | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| WO2005122218A1 (ja) * | 2004-06-09 | 2005-12-22 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| EP1788617B1 (en) * | 2004-06-09 | 2013-04-10 | Nikon Corporation | Substrate holding device, exposure apparatus having the same and method for producing a device |
| KR101700546B1 (ko) | 2004-06-10 | 2017-01-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US8508713B2 (en) * | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US20070139628A1 (en) * | 2004-06-10 | 2007-06-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| KR101310472B1 (ko) | 2004-06-10 | 2013-09-24 | 가부시키가이샤 니콘 엔지니어링 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
| JP4623095B2 (ja) | 2004-06-17 | 2011-02-02 | 株式会社ニコン | 液浸リソグラフィレンズの流体圧力補正 |
| JP4565272B2 (ja) | 2004-07-01 | 2010-10-20 | 株式会社ニコン | 液浸リソグラフィのための動的流体制御システム |
| US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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2015
- 2015-08-13 JP JP2015159807A patent/JP6119810B2/ja not_active Expired - Lifetime
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2017
- 2017-03-06 US US15/450,611 patent/US9910369B2/en not_active Expired - Lifetime
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2018
- 2018-01-31 US US15/884,634 patent/US20180149984A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004112108A1 (ja) * | 2003-06-13 | 2004-12-23 | Nikon Corporation | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
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