TW522453B - Display device - Google Patents
Display device Download PDFInfo
- Publication number
- TW522453B TW522453B TW091115307A TW91115307A TW522453B TW 522453 B TW522453 B TW 522453B TW 091115307 A TW091115307 A TW 091115307A TW 91115307 A TW91115307 A TW 91115307A TW 522453 B TW522453 B TW 522453B
- Authority
- TW
- Taiwan
- Prior art keywords
- display device
- patent application
- substrate
- item
- scope
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 131
- 239000010408 film Substances 0.000 claims description 163
- 238000011049 filling Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 40
- 239000011368 organic material Substances 0.000 claims description 39
- 239000010409 thin film Substances 0.000 claims description 34
- 239000000853 adhesive Substances 0.000 claims description 32
- 230000001070 adhesive effect Effects 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 230000002079 cooperative effect Effects 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 238000013519 translation Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 7
- 229920000178 Acrylic resin Polymers 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000002274 desiccant Substances 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 7
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 claims 12
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims 10
- 239000004305 biphenyl Substances 0.000 claims 4
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims 2
- 238000005401 electroluminescence Methods 0.000 claims 2
- 235000010290 biphenyl Nutrition 0.000 claims 1
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 claims 1
- 210000002445 nipple Anatomy 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 123
- 239000012535 impurity Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 239000011159 matrix material Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 12
- 239000002585 base Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000004576 sand Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000001994 activation Methods 0.000 description 9
- 238000005070 sampling Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 150000007514 bases Chemical class 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000004913 activation Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- -1 sand nitride Chemical class 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000000872 buffer Substances 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910000450 iodine oxide Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- AFSVSXMRDKPOEW-UHFFFAOYSA-N oxidoiodine(.) Chemical compound I[O] AFSVSXMRDKPOEW-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229940125904 compound 1 Drugs 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 3
- 229910001947 lithium oxide Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229940125773 compound 10 Drugs 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000191 radiation effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 241000234282 Allium Species 0.000 description 1
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 208000007256 Nevus Diseases 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical group OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000001045 blue dye Substances 0.000 description 1
- 239000001055 blue pigment Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- 229910010277 boron hydride Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000001046 green dye Substances 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000001044 red dye Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 230000003442 weekly effect Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26467299 | 1999-09-17 | ||
| JP26468099 | 1999-09-17 | ||
| JP33624899 | 1999-11-26 | ||
| JP33624799 | 1999-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW522453B true TW522453B (en) | 2003-03-01 |
Family
ID=27478695
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091115307A TW522453B (en) | 1999-09-17 | 2000-08-31 | Display device |
| TW089117815A TW516244B (en) | 1999-09-17 | 2000-08-31 | EL display device and method for manufacturing the same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089117815A TW516244B (en) | 1999-09-17 | 2000-08-31 | EL display device and method for manufacturing the same |
Country Status (7)
| Country | Link |
|---|---|
| US (10) | US6445005B1 (enExample) |
| EP (2) | EP1085576B1 (enExample) |
| JP (6) | JP2011071141A (enExample) |
| KR (2) | KR100788873B1 (enExample) |
| CN (2) | CN101266996B (enExample) |
| DE (1) | DE60045361D1 (enExample) |
| TW (2) | TW522453B (enExample) |
Families Citing this family (170)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW522453B (en) | 1999-09-17 | 2003-03-01 | Semiconductor Energy Lab | Display device |
| JP3942770B2 (ja) | 1999-09-22 | 2007-07-11 | 株式会社半導体エネルギー研究所 | El表示装置及び電子装置 |
| JP2001092413A (ja) | 1999-09-24 | 2001-04-06 | Semiconductor Energy Lab Co Ltd | El表示装置および電子装置 |
| US6641933B1 (en) | 1999-09-24 | 2003-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting EL display device |
| US6876145B1 (en) * | 1999-09-30 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent display device |
| US6646287B1 (en) | 1999-11-19 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with tapered gate and insulating film |
| TW511298B (en) * | 1999-12-15 | 2002-11-21 | Semiconductor Energy Lab | EL display device |
| TW494447B (en) | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US7579203B2 (en) | 2000-04-25 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US6879110B2 (en) | 2000-07-27 | 2005-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Method of driving display device |
| US6605826B2 (en) * | 2000-08-18 | 2003-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
| US7178927B2 (en) * | 2000-11-14 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent device having drying agent |
| US7222981B2 (en) | 2001-02-15 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device |
| US6822391B2 (en) * | 2001-02-21 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic equipment, and method of manufacturing thereof |
| KR100495701B1 (ko) * | 2001-03-07 | 2005-06-14 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치의 제조방법 |
| US6509941B2 (en) * | 2001-03-22 | 2003-01-21 | Eastman Kodak Company | Light-producing display having high aperture ratio pixels |
| TW546857B (en) * | 2001-07-03 | 2003-08-11 | Semiconductor Energy Lab | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment |
| JP4152665B2 (ja) | 2001-07-11 | 2008-09-17 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| KR100448448B1 (ko) * | 2001-07-12 | 2004-09-13 | 주식회사 디알텍 | X선 센서용 스위칭소자 및 그 제조방법 |
| KR100600846B1 (ko) * | 2001-10-15 | 2006-07-14 | 삼성에스디아이 주식회사 | 액티브 매트릭스형 유기전계 발광표시소자 및 그의 제조방법 |
| US7365713B2 (en) | 2001-10-24 | 2008-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| JP3724725B2 (ja) * | 2001-11-01 | 2005-12-07 | ソニー株式会社 | 表示装置の製造方法 |
| JP4149168B2 (ja) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US7042024B2 (en) | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| US6903377B2 (en) * | 2001-11-09 | 2005-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| JP2003234186A (ja) * | 2001-12-06 | 2003-08-22 | Sony Corp | 表示装置およびその製造方法 |
| CN1245703C (zh) * | 2001-12-11 | 2006-03-15 | 精工爱普生株式会社 | 显示装置及其电子机器 |
| TW591971B (en) * | 2001-12-11 | 2004-06-11 | Seiko Epson Corp | Display apparatus and electronic machine |
| JP3705264B2 (ja) * | 2001-12-18 | 2005-10-12 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
| JP4101511B2 (ja) * | 2001-12-27 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| US6815723B2 (en) | 2001-12-28 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor |
| KR100834342B1 (ko) * | 2001-12-29 | 2008-06-02 | 엘지디스플레이 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
| US20030127972A1 (en) * | 2002-01-05 | 2003-07-10 | Cheng-Xian Han | Dual-panel active matrix organic electroluminscent display |
| US6909240B2 (en) * | 2002-01-18 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7098069B2 (en) | 2002-01-24 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
| TWI258317B (en) * | 2002-01-25 | 2006-07-11 | Semiconductor Energy Lab | A display device and method for manufacturing thereof |
| JP3723507B2 (ja) * | 2002-01-29 | 2005-12-07 | 三洋電機株式会社 | 駆動回路 |
| TW200401944A (en) * | 2002-02-01 | 2004-02-01 | Seiko Epson Corp | Circuit substrate, electro-optical device and electronic appliances |
| WO2003069957A1 (en) * | 2002-02-12 | 2003-08-21 | Idemitsu Kosan Co., Ltd. | Organic el display and its production method |
| WO2003069652A2 (en) * | 2002-02-13 | 2003-08-21 | The Regents Of The University Of California | A multilayer structure to form an active matrix display having single crystalline drivers over a transmissive substrate |
| US6933520B2 (en) * | 2002-02-13 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| KR20030069707A (ko) | 2002-02-22 | 2003-08-27 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
| KR100426964B1 (ko) * | 2002-03-20 | 2004-04-13 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
| JP4046267B2 (ja) * | 2002-03-26 | 2008-02-13 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| US7786496B2 (en) | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| KR100464864B1 (ko) * | 2002-04-25 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
| JP2003317971A (ja) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| JP3986051B2 (ja) | 2002-04-30 | 2007-10-03 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器 |
| JP2003332054A (ja) * | 2002-05-16 | 2003-11-21 | Bunwa Ko | 冷光片の製造方法 |
| US7474045B2 (en) * | 2002-05-17 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device having TFT with radiation-absorbing film |
| US6882106B2 (en) * | 2002-05-24 | 2005-04-19 | Wen-Hao Kao | Electroluminescent display device |
| US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| US6563134B1 (en) * | 2002-06-14 | 2003-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd | Optoelectronic microelectronic fabrication with attenuated light leakage |
| JP4216008B2 (ja) | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、dvdプレーヤー、電子遊技機器、または携帯情報端末 |
| JP3864863B2 (ja) * | 2002-07-10 | 2007-01-10 | 株式会社豊田自動織機 | カラー表示装置 |
| US7081704B2 (en) | 2002-08-09 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR100478759B1 (ko) * | 2002-08-20 | 2005-03-24 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
| KR100479770B1 (ko) | 2002-08-29 | 2005-04-06 | 엘지.필립스 엘시디 주식회사 | 오프스트레스에 의한 전계효과트랜지스터의 오프전류 감소방법 및 시스템 |
| JP2004119016A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2004119015A (ja) * | 2002-09-20 | 2004-04-15 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| US7936338B2 (en) * | 2002-10-01 | 2011-05-03 | Sony Corporation | Display unit and its manufacturing method |
| JPWO2004036960A1 (ja) * | 2002-10-16 | 2006-02-16 | 出光興産株式会社 | 有機エレクトロルミネッセンス表示装置及びその製造方法 |
| AU2003275614A1 (en) | 2002-10-30 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR100915233B1 (ko) * | 2002-11-05 | 2009-09-02 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 |
| US20040099926A1 (en) * | 2002-11-22 | 2004-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same |
| KR100484092B1 (ko) | 2002-12-26 | 2005-04-18 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그 제조방법 |
| JP4373086B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US7652359B2 (en) * | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
| US6936960B2 (en) * | 2003-01-10 | 2005-08-30 | Eastman Kodak Company | OLED displays having improved contrast |
| EP2326143B1 (en) | 2003-01-24 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Electronic book |
| US20040227197A1 (en) * | 2003-02-28 | 2004-11-18 | Shinji Maekawa | Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof |
| JP4531342B2 (ja) * | 2003-03-17 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 白色有機発光素子および発光装置 |
| JP2004296353A (ja) * | 2003-03-27 | 2004-10-21 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに表示装置 |
| US6861669B2 (en) * | 2003-03-31 | 2005-03-01 | Agilent Technologies, Inc. | Compound display |
| TWI363574B (en) * | 2003-04-07 | 2012-05-01 | Semiconductor Energy Lab | Electronic apparatus |
| US7862906B2 (en) * | 2003-04-09 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent element and light-emitting device |
| JP2004327634A (ja) * | 2003-04-23 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | レーザ発振器 |
| CN100413085C (zh) * | 2003-04-24 | 2008-08-20 | 统宝光电股份有限公司 | 上发光型全彩有机发光显示器结构 |
| JP4428979B2 (ja) * | 2003-09-30 | 2010-03-10 | 三洋電機株式会社 | 有機elパネル |
| JP4497881B2 (ja) * | 2003-09-30 | 2010-07-07 | 三洋電機株式会社 | 有機el素子および有機elパネル |
| JP4716699B2 (ja) * | 2003-09-30 | 2011-07-06 | 三洋電機株式会社 | 有機elパネル |
| US7541734B2 (en) * | 2003-10-03 | 2009-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having a layer with a metal oxide and a benzoxazole derivative |
| KR100552975B1 (ko) * | 2003-11-22 | 2006-02-15 | 삼성에스디아이 주식회사 | 능동 매트릭스 유기전계발광표시장치 및 그의 제조방법 |
| US7893438B2 (en) * | 2003-10-16 | 2011-02-22 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display device including a planarization pattern and method for manufacturing the same |
| US7229900B2 (en) | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
| CN100489569C (zh) | 2003-10-28 | 2009-05-20 | 株式会社半导体能源研究所 | 制作光学膜的方法 |
| US7453531B2 (en) * | 2003-11-22 | 2008-11-18 | Lg Display Co., Ltd. | LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device |
| TWI250823B (en) * | 2003-11-26 | 2006-03-01 | Rohm Co Ltd | D/A converter circuit, organic EL drive circuit and organic EL display device |
| KR101061730B1 (ko) | 2003-11-28 | 2011-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 그 제조 방법 |
| KR101095293B1 (ko) | 2003-11-28 | 2011-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 제조 방법 |
| JP4475942B2 (ja) * | 2003-12-26 | 2010-06-09 | 三洋電機株式会社 | 表示装置及びその製造方法 |
| JP4439260B2 (ja) * | 2003-12-26 | 2010-03-24 | 三洋電機株式会社 | 表示装置の製造方法 |
| JP2005197009A (ja) * | 2003-12-26 | 2005-07-21 | Sanyo Electric Co Ltd | 表示装置及びその製造方法及び製造装置 |
| KR100595456B1 (ko) * | 2003-12-29 | 2006-06-30 | 엘지.필립스 엘시디 주식회사 | 액정표시소자의 제조방법 |
| JP4286216B2 (ja) * | 2004-03-24 | 2009-06-24 | 三洋電機株式会社 | 発光表示装置 |
| US7202504B2 (en) * | 2004-05-20 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| TWI272039B (en) * | 2004-06-18 | 2007-01-21 | Sanyo Electric Co | Electroluminescence panel |
| KR100615236B1 (ko) * | 2004-08-05 | 2006-08-25 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
| JP2006058332A (ja) * | 2004-08-17 | 2006-03-02 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| US7365494B2 (en) * | 2004-12-03 | 2008-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP4272142B2 (ja) * | 2004-12-07 | 2009-06-03 | 株式会社ルネサステクノロジ | スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール |
| CN100455153C (zh) * | 2004-12-24 | 2009-01-21 | 中华映管股份有限公司 | 有机电致发光显示器及其制造方法 |
| US8633473B2 (en) | 2004-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | High contrast light emitting device and method for manufacturing the same |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP4573672B2 (ja) | 2005-02-28 | 2010-11-04 | 三洋電機株式会社 | 有機elパネル |
| TWI254594B (en) * | 2005-03-17 | 2006-05-01 | Ind Tech Res Inst | Color organic light-emitting display and manufacturing process thereof |
| US20060290276A1 (en) * | 2005-06-22 | 2006-12-28 | Eastman Kodak Company | OLED device having spacers |
| US7531959B2 (en) * | 2005-06-29 | 2009-05-12 | Eastman Kodak Company | White light tandem OLED display with filters |
| EP1793264A1 (en) * | 2005-12-05 | 2007-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR100771607B1 (ko) * | 2005-12-21 | 2007-10-31 | 엘지전자 주식회사 | 유기 el 디스플레이 |
| WO2007072766A1 (en) * | 2005-12-22 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP1804114B1 (en) * | 2005-12-28 | 2014-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101424784B1 (ko) | 2006-01-10 | 2014-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 제조방법 |
| EP1832915B1 (en) * | 2006-01-31 | 2012-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device with improved contrast |
| EP1816508A1 (en) | 2006-02-02 | 2007-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7919855B2 (en) * | 2006-02-21 | 2011-04-05 | Lockheed Martin | Topside thermal management of semiconductor devices using boron phosphide contacting a gate terminal |
| EP1826605A1 (en) * | 2006-02-24 | 2007-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP1826606B1 (en) | 2006-02-24 | 2012-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7659664B2 (en) * | 2006-05-30 | 2010-02-09 | Tpo Displays Corp. | System for displaying image |
| US7528448B2 (en) * | 2006-07-17 | 2009-05-05 | E.I. Du Pont De Nemours And Company | Thin film transistor comprising novel conductor and dielectric compositions |
| US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US7943287B2 (en) * | 2006-07-28 | 2011-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| WO2008023630A1 (en) | 2006-08-24 | 2008-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8563431B2 (en) * | 2006-08-25 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7795154B2 (en) | 2006-08-25 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers |
| US7651896B2 (en) * | 2006-08-30 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5110830B2 (ja) * | 2006-08-31 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7988057B2 (en) * | 2006-11-28 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| JP4978997B2 (ja) * | 2006-12-25 | 2012-07-18 | 株式会社ジャパンディスプレイイースト | 表示装置の製造方法 |
| US7960261B2 (en) * | 2007-03-23 | 2011-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor |
| US8513678B2 (en) * | 2007-05-18 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US20090001360A1 (en) * | 2007-06-29 | 2009-01-01 | Masaya Nakayama | Organic el display and method for producing the same |
| GB0807767D0 (en) * | 2008-04-29 | 2008-06-04 | Plastic Logic Ltd | Off-set top pixel electrode configuration |
| KR102383642B1 (ko) | 2008-07-10 | 2022-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 전자기기 |
| KR20100037876A (ko) * | 2008-10-02 | 2010-04-12 | 삼성전자주식회사 | 유기발광 표시장치 및 이의 제조방법 |
| CN102549638B (zh) * | 2009-10-09 | 2015-04-01 | 株式会社半导体能源研究所 | 发光显示器件以及包括该发光显示器件的电子设备 |
| EP2513966B1 (en) * | 2009-12-18 | 2020-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101135539B1 (ko) * | 2010-03-05 | 2012-04-13 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
| KR20120026970A (ko) | 2010-09-10 | 2012-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 발광 장치 |
| US8884509B2 (en) | 2011-03-02 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Optical device, display device, and lighting device |
| JP5720887B2 (ja) * | 2011-03-30 | 2015-05-20 | ソニー株式会社 | 表示装置および電子機器 |
| US9030837B2 (en) | 2011-06-10 | 2015-05-12 | Scott Moncrieff | Injection molded control panel with in-molded decorated plastic film that includes an internal connector |
| TW201316109A (zh) * | 2011-10-05 | 2013-04-16 | Chunghwa Picture Tubes Ltd | 反射式電泳顯示裝置之畫素結構及其製作方法 |
| KR101924996B1 (ko) | 2012-03-29 | 2018-12-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR102082793B1 (ko) | 2012-05-10 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
| JP2014067522A (ja) * | 2012-09-25 | 2014-04-17 | Toshiba Corp | 表示装置およびその製造方法 |
| CN103907190B (zh) | 2012-10-16 | 2017-05-17 | 深圳市柔宇科技有限公司 | 一种oled拼接显示屏及其制造方法 |
| KR102000642B1 (ko) * | 2012-12-12 | 2019-07-17 | 엘지디스플레이 주식회사 | 고 휘도 유기발광 다이오드 표시장치 |
| KR102092842B1 (ko) * | 2013-08-07 | 2020-04-16 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
| CN103500754B (zh) | 2013-09-29 | 2016-11-02 | 京东方科技集团股份有限公司 | Oled显示面板及其制作方法、显示装置 |
| TWI642170B (zh) | 2013-10-18 | 2018-11-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| JP2015128003A (ja) | 2013-12-27 | 2015-07-09 | ソニー株式会社 | 表示装置および電子機器 |
| KR102138906B1 (ko) * | 2013-12-30 | 2020-07-28 | 엘지디스플레이 주식회사 | 백색 유기발광 소자 및 컬러 필터를 이용한 유기발광 표시장치 |
| US9349768B2 (en) * | 2014-03-28 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor with epitaxial passivation layer |
| KR20150131522A (ko) * | 2014-05-15 | 2015-11-25 | 엘지디스플레이 주식회사 | 유기 발광 표시 소자 디스플레이 패널 |
| KR102239842B1 (ko) * | 2014-07-30 | 2021-04-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR102397799B1 (ko) * | 2015-06-30 | 2022-05-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 표시장치 |
| CN105118844A (zh) * | 2015-07-01 | 2015-12-02 | 深圳市华星光电技术有限公司 | 一种柔性显示面板的制备方法及柔性显示面板 |
| CN108141554B (zh) * | 2015-09-30 | 2021-02-09 | 株式会社尼康 | 拍摄元件、拍摄装置及电子设备 |
| KR102554963B1 (ko) * | 2015-10-29 | 2023-07-11 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP6299783B2 (ja) * | 2016-02-15 | 2018-03-28 | セイコーエプソン株式会社 | 電気光学装置、および電子機器 |
| JP6715708B2 (ja) * | 2016-07-08 | 2020-07-01 | 株式会社ジャパンディスプレイ | 表示装置 |
| US11006489B2 (en) * | 2017-02-02 | 2021-05-11 | Pioneer Corporation | Optical device |
| JP6504206B2 (ja) | 2017-06-30 | 2019-04-24 | セイコーエプソン株式会社 | 電気光学装置、および電子機器 |
| CN107369700B (zh) * | 2017-07-13 | 2020-01-07 | 京东方科技集团股份有限公司 | 一种阵列基板、其制备方法、显示面板及显示装置 |
| KR102490896B1 (ko) * | 2018-01-17 | 2023-01-25 | 삼성디스플레이 주식회사 | 유기발광 표시 장치 |
| JP7117974B2 (ja) * | 2018-10-30 | 2022-08-15 | キヤノン株式会社 | 表示装置および電子機器 |
| KR102063314B1 (ko) * | 2018-11-28 | 2020-01-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR20230102392A (ko) * | 2021-12-30 | 2023-07-07 | 엘지디스플레이 주식회사 | 표시장치 |
Family Cites Families (116)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4357557A (en) * | 1979-03-16 | 1982-11-02 | Sharp Kabushiki Kaisha | Glass sealed thin-film electroluminescent display panel free of moisture and the fabrication method thereof |
| JPS5955487A (ja) * | 1982-09-25 | 1984-03-30 | 日本精機株式会社 | 電界発光表示素子 |
| JPS6196695A (ja) * | 1984-10-18 | 1986-05-15 | 松下電器産業株式会社 | Elパネル |
| JPS61224290A (ja) * | 1985-03-28 | 1986-10-04 | シャープ株式会社 | 薄膜el素子 |
| JPS6290260A (ja) | 1985-10-16 | 1987-04-24 | Tdk Corp | サ−マルヘツド用耐摩耗性保護膜 |
| JPS62290096A (ja) * | 1986-05-23 | 1987-12-16 | 株式会社小松製作所 | 薄膜el素子 |
| FI891288L (fi) * | 1986-09-19 | 1989-03-17 | Komatsu Mfg Co Ltd | Tunnskikt-el-apparat. |
| JP2620240B2 (ja) * | 1987-06-10 | 1997-06-11 | 株式会社日立製作所 | 液晶表示装置 |
| JP2742057B2 (ja) | 1988-07-14 | 1998-04-22 | シャープ株式会社 | 薄膜elパネル |
| DE68920702T2 (de) * | 1988-11-10 | 1995-06-14 | Toshiba Kawasaki Kk | Flüssigkristall-Anzeigevorrichtung, Farbfilter hierfür und Verfahren zur Herstellung des Farbfilters. |
| US5189405A (en) | 1989-01-26 | 1993-02-23 | Sharp Kabushiki Kaisha | Thin film electroluminescent panel |
| JPH032592U (enExample) | 1989-05-26 | 1991-01-11 | ||
| JPH032592A (ja) | 1989-05-30 | 1991-01-08 | Wataru Yamamoto | 時計 |
| JPH0329291A (ja) | 1989-06-27 | 1991-02-07 | Sumitomo Bakelite Co Ltd | 有機分散型elランプ用捕水フィルム |
| US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
| US5206749A (en) * | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| JP3197305B2 (ja) | 1991-10-08 | 2001-08-13 | ティーディーケイ株式会社 | 電界発光素子の保護 |
| JP2784615B2 (ja) * | 1991-10-16 | 1998-08-06 | 株式会社半導体エネルギー研究所 | 電気光学表示装置およびその駆動方法 |
| JPH05241201A (ja) | 1992-03-02 | 1993-09-21 | Sony Corp | 垂直駆動回路 |
| JPH08501887A (ja) * | 1992-09-11 | 1996-02-27 | コピン・コーポレーシヨン | ディスプレイ・パネルのためのカラーフィルター・システム |
| US5859627A (en) * | 1992-10-19 | 1999-01-12 | Fujitsu Limited | Driving circuit for liquid-crystal display device |
| EP1463028A2 (en) * | 1993-04-22 | 2004-09-29 | Matsushita Electric Industrial Co., Ltd. | Display device and projection-type display apparatus using the device |
| JP2677167B2 (ja) * | 1993-07-08 | 1997-11-17 | 日本電気株式会社 | 駆動回路内蔵型液晶表示装置の製造方法 |
| US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| TW264575B (enExample) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP3170542B2 (ja) | 1993-12-08 | 2001-05-28 | 出光興産株式会社 | 有機el素子 |
| JPH07220871A (ja) | 1994-01-28 | 1995-08-18 | Res Dev Corp Of Japan | 有機エレクトロルミネッセンスデバイス |
| JPH07249766A (ja) * | 1994-03-10 | 1995-09-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2839133B2 (ja) * | 1994-03-31 | 1998-12-16 | キヤノン株式会社 | カラーフィルタの製造方法及び製造装置及び液晶表示装置の製造方法及び液晶表示装置を備えた装置の製造方法 |
| US5617228A (en) * | 1994-07-13 | 1997-04-01 | Kabushiki Kaisha Toshiba | Polymer-dispersed liquid crystal display device and method to set liquid crystal layer thickness in association with driving voltage |
| JP3715996B2 (ja) * | 1994-07-29 | 2005-11-16 | 株式会社日立製作所 | 液晶表示装置 |
| US5962962A (en) | 1994-09-08 | 1999-10-05 | Idemitsu Kosan Co., Ltd. | Method of encapsulating organic electroluminescence device and organic electroluminescence device |
| JPH0875908A (ja) * | 1994-09-08 | 1996-03-22 | Nippon Sheet Glass Co Ltd | 光学的2次元画像伝送装置 |
| JP3372671B2 (ja) * | 1994-09-14 | 2003-02-04 | キヤノン株式会社 | カラーフィルタの製造方法及び製造装置 |
| JPH0896959A (ja) | 1994-09-27 | 1996-04-12 | Sumitomo Electric Ind Ltd | 有機エレクトロルミネッセンス素子 |
| JP3240858B2 (ja) * | 1994-10-19 | 2001-12-25 | ソニー株式会社 | カラー表示装置 |
| JPH08234018A (ja) | 1994-11-18 | 1996-09-13 | Semiconductor Energy Lab Co Ltd | 表示装置用光学機能手段及びその作製方法及びその作 製装置 |
| US5550066A (en) * | 1994-12-14 | 1996-08-27 | Eastman Kodak Company | Method of fabricating a TFT-EL pixel |
| JPH08213169A (ja) * | 1995-02-01 | 1996-08-20 | Fuji Electric Co Ltd | 薄膜電場発光素子 |
| DE69623443T2 (de) | 1995-02-06 | 2003-01-23 | Idemitsu Kosan Co | Vielfarbige lichtemissionsvorrichtung und verfahren zur herstellung derselben |
| JP3962436B2 (ja) | 1995-02-14 | 2007-08-22 | 出光興産株式会社 | 多色発光装置 |
| TW345654B (en) * | 1995-02-15 | 1998-11-21 | Handotai Energy Kenkyusho Kk | Active matrix display device |
| TW344901B (en) * | 1995-02-15 | 1998-11-11 | Handotai Energy Kenkyusho Kk | Active matrix display device |
| JP3539821B2 (ja) | 1995-03-27 | 2004-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR19990007825A (ko) | 1995-04-25 | 1999-01-25 | 하루타히로시 | 유기 전계 발광 장치 |
| US5771562A (en) | 1995-05-02 | 1998-06-30 | Motorola, Inc. | Passivation of organic devices |
| JPH08321380A (ja) * | 1995-05-25 | 1996-12-03 | Chisso Corp | 有機電界発光素子 |
| JPH0963770A (ja) | 1995-08-24 | 1997-03-07 | Kemipuro Kasei Kk | 単層型白色発光有機el素子 |
| JPH09134781A (ja) * | 1995-11-09 | 1997-05-20 | Sharp Corp | 薄膜エレクトロルミネッセンスパネルおよびその製造方法 |
| JPH09148066A (ja) * | 1995-11-24 | 1997-06-06 | Pioneer Electron Corp | 有機el素子 |
| US5811177A (en) | 1995-11-30 | 1998-09-22 | Motorola, Inc. | Passivation of electroluminescent organic devices |
| US5686360A (en) | 1995-11-30 | 1997-11-11 | Motorola | Passivation of organic devices |
| JP3647542B2 (ja) * | 1996-02-20 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| WO1997031508A1 (en) | 1996-02-26 | 1997-08-28 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent element and method for manufacturing the same |
| US5693956A (en) | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
| JPH10104606A (ja) * | 1996-09-27 | 1998-04-24 | Toray Ind Inc | 液晶表示装置 |
| JPH10107266A (ja) | 1996-09-27 | 1998-04-24 | New Japan Radio Co Ltd | Mos型fetの製造方法 |
| JP4022274B2 (ja) | 1996-10-14 | 2007-12-12 | 出光興産株式会社 | 有機el発光装置 |
| JPH10162952A (ja) | 1996-11-27 | 1998-06-19 | Sharp Corp | 薄膜elパネル及びその製造方法 |
| JP3457819B2 (ja) * | 1996-11-28 | 2003-10-20 | カシオ計算機株式会社 | 表示装置 |
| DE69739633D1 (de) * | 1996-11-28 | 2009-12-10 | Casio Computer Co Ltd | Anzeigevorrichtung |
| JPH10162958A (ja) | 1996-11-28 | 1998-06-19 | Casio Comput Co Ltd | El素子 |
| JPH10161563A (ja) * | 1996-11-29 | 1998-06-19 | Tdk Corp | 有機el表示装置 |
| JP3392672B2 (ja) * | 1996-11-29 | 2003-03-31 | 三洋電機株式会社 | 表示装置 |
| JPH10172762A (ja) * | 1996-12-11 | 1998-06-26 | Sanyo Electric Co Ltd | エレクトロルミネッセンス素子を用いた表示装置の製造方法及び表示装置 |
| JP3463971B2 (ja) | 1996-12-26 | 2003-11-05 | 出光興産株式会社 | 有機アクティブel発光装置 |
| JP3453488B2 (ja) * | 1996-12-27 | 2003-10-06 | キヤノン株式会社 | 照明装置及びこれを用いた画像読み取り装置 |
| US5869929A (en) * | 1997-02-04 | 1999-02-09 | Idemitsu Kosan Co., Ltd. | Multicolor luminescent device |
| US6049167A (en) | 1997-02-17 | 2000-04-11 | Tdk Corporation | Organic electroluminescent display device, and method and system for making the same |
| JPH10241857A (ja) * | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | 薄膜電場発光素子の製造方法 |
| JPH10247587A (ja) * | 1997-02-28 | 1998-09-14 | Tdk Corp | 有機エレクトロルミネッセンス表示装置およびその製造方法 |
| JP3641342B2 (ja) * | 1997-03-07 | 2005-04-20 | Tdk株式会社 | 半導体装置及び有機elディスプレイ装置 |
| JP3524711B2 (ja) | 1997-03-18 | 2004-05-10 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| US5952778A (en) | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
| JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH10289784A (ja) * | 1997-04-14 | 1998-10-27 | Mitsubishi Chem Corp | 有機電界発光素子 |
| JP3290375B2 (ja) | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | 有機電界発光素子 |
| JPH10319910A (ja) * | 1997-05-15 | 1998-12-04 | Tdk Corp | 有機elディスプレイの駆動装置 |
| JP3566028B2 (ja) * | 1997-05-15 | 2004-09-15 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
| JP3530341B2 (ja) * | 1997-05-16 | 2004-05-24 | Tdk株式会社 | 画像表示装置 |
| JP3269787B2 (ja) * | 1997-05-27 | 2002-04-02 | シャープ株式会社 | 液晶表示装置 |
| US5920080A (en) * | 1997-06-23 | 1999-07-06 | Fed Corporation | Emissive display using organic light emitting diodes |
| JP3304287B2 (ja) | 1997-06-30 | 2002-07-22 | 出光興産株式会社 | 有機el多色発光表示装置 |
| JPH1126155A (ja) | 1997-06-30 | 1999-01-29 | Mitsui Chem Inc | エレクトロルミネッセンス素子用保護フィルム |
| US6198220B1 (en) | 1997-07-11 | 2001-03-06 | Emagin Corporation | Sealing structure for organic light emitting devices |
| JPH1140346A (ja) * | 1997-07-22 | 1999-02-12 | Pioneer Electron Corp | 有機エレクトロルミネセンス表示装置 |
| JPH1154273A (ja) * | 1997-08-01 | 1999-02-26 | Idemitsu Kosan Co Ltd | 色変換フィルタおよびその製造方法 |
| CN1155930C (zh) * | 1997-08-21 | 2004-06-30 | 精工爱普生株式会社 | 有源矩阵型显示装置 |
| JP3580092B2 (ja) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
| EP0899987A1 (en) * | 1997-08-29 | 1999-03-03 | TDK Corporation | Organic electroluminescent device |
| JP3439636B2 (ja) | 1997-09-01 | 2003-08-25 | 株式会社クボタ | 早期安定型埋立処分方法 |
| JPH11109890A (ja) * | 1997-09-29 | 1999-04-23 | Idemitsu Kosan Co Ltd | プラズマアドレス型有機el装置 |
| JPH11144864A (ja) * | 1997-11-13 | 1999-05-28 | Mitsubishi Chemical Corp | 有機電界発光素子及びその製造方法 |
| KR100249784B1 (ko) | 1997-11-20 | 2000-04-01 | 정선종 | 고분자복합막을이용한유기물혹은고분자전기발광소자의패키징방법 |
| GB9724682D0 (en) * | 1997-11-21 | 1998-01-21 | Cambridge Display Tech Ltd | Electroluminescent device |
| JPH11231805A (ja) | 1998-02-10 | 1999-08-27 | Sanyo Electric Co Ltd | 表示装置 |
| GB9803441D0 (en) * | 1998-02-18 | 1998-04-15 | Cambridge Display Tech Ltd | Electroluminescent devices |
| JPH11251059A (ja) * | 1998-02-27 | 1999-09-17 | Sanyo Electric Co Ltd | カラー表示装置 |
| JPH11326954A (ja) * | 1998-05-15 | 1999-11-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2000003783A (ja) | 1998-06-12 | 2000-01-07 | Tdk Corp | 有機el表示装置 |
| US6146225A (en) | 1998-07-30 | 2000-11-14 | Agilent Technologies, Inc. | Transparent, flexible permeability barrier for organic electroluminescent devices |
| JP2000077191A (ja) | 1998-08-31 | 2000-03-14 | Sanyo Electric Co Ltd | 表示装置 |
| JP2000173766A (ja) * | 1998-09-30 | 2000-06-23 | Sanyo Electric Co Ltd | 表示装置 |
| US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| EP1016894A3 (en) * | 1998-12-28 | 2001-03-28 | Kyocera Corporation | Liquid crystal display device |
| JP2000305483A (ja) | 1999-04-20 | 2000-11-02 | Toshiba Corp | アクティブマトリクス基板の製造方法 |
| EP2256808A2 (en) * | 1999-04-30 | 2010-12-01 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method therof |
| TW527735B (en) * | 1999-06-04 | 2003-04-11 | Semiconductor Energy Lab | Electro-optical device |
| US7288420B1 (en) * | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| US6466281B1 (en) * | 1999-08-23 | 2002-10-15 | Industrial Technology Research Institute | Integrated black matrix/color filter structure for TFT-LCD |
| TW522453B (en) | 1999-09-17 | 2003-03-01 | Semiconductor Energy Lab | Display device |
| JP3942770B2 (ja) * | 1999-09-22 | 2007-07-11 | 株式会社半導体エネルギー研究所 | El表示装置及び電子装置 |
| US6413645B1 (en) | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
| TW511298B (en) * | 1999-12-15 | 2002-11-21 | Semiconductor Energy Lab | EL display device |
| JP5241201B2 (ja) | 2007-11-02 | 2013-07-17 | キヤノン株式会社 | 電子機器 |
-
2000
- 2000-08-31 TW TW091115307A patent/TW522453B/zh not_active IP Right Cessation
- 2000-08-31 TW TW089117815A patent/TW516244B/zh not_active IP Right Cessation
- 2000-09-07 EP EP00119584A patent/EP1085576B1/en not_active Expired - Lifetime
- 2000-09-07 EP EP10177425.5A patent/EP2259322B1/en not_active Expired - Lifetime
- 2000-09-07 DE DE60045361T patent/DE60045361D1/de not_active Expired - Lifetime
- 2000-09-13 US US09/661,022 patent/US6445005B1/en not_active Expired - Lifetime
- 2000-09-15 CN CN2008100819370A patent/CN101266996B/zh not_active Expired - Lifetime
- 2000-09-15 CN CNB001287567A patent/CN100383983C/zh not_active Expired - Lifetime
- 2000-09-16 KR KR1020000054382A patent/KR100788873B1/ko not_active Expired - Lifetime
-
2002
- 2002-07-26 US US10/206,018 patent/US6894312B2/en not_active Expired - Lifetime
-
2005
- 2005-03-01 US US11/070,121 patent/US7518146B2/en not_active Expired - Lifetime
- 2005-09-14 KR KR1020050085682A patent/KR100746657B1/ko not_active Expired - Lifetime
-
2009
- 2009-04-06 US US12/418,749 patent/US7952103B2/en not_active Expired - Fee Related
-
2011
- 2011-01-07 JP JP2011001642A patent/JP2011071141A/ja not_active Withdrawn
- 2011-05-27 US US13/117,319 patent/US8183571B2/en not_active Expired - Fee Related
-
2012
- 2012-05-18 US US13/475,523 patent/US8450745B2/en not_active Expired - Fee Related
- 2012-09-27 JP JP2012214477A patent/JP5683047B2/ja not_active Expired - Fee Related
-
2013
- 2013-05-22 US US13/899,893 patent/US8735900B2/en not_active Expired - Fee Related
-
2014
- 2014-05-23 US US14/286,171 patent/US9059049B2/en not_active Expired - Fee Related
- 2014-08-20 JP JP2014167335A patent/JP2014239252A/ja not_active Withdrawn
-
2015
- 2015-06-11 US US14/736,648 patent/US9431470B2/en not_active Expired - Fee Related
- 2015-10-21 JP JP2015207045A patent/JP2016066617A/ja not_active Withdrawn
-
2016
- 2016-08-26 US US15/248,664 patent/US9735218B2/en not_active Expired - Fee Related
- 2016-12-23 JP JP2016250252A patent/JP6571630B2/ja not_active Expired - Lifetime
-
2018
- 2018-06-01 JP JP2018105820A patent/JP2018156952A/ja not_active Withdrawn
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW522453B (en) | Display device | |
| TW511298B (en) | EL display device | |
| JP6513778B2 (ja) | 発光装置 | |
| JP4942867B2 (ja) | El表示装置及び電子装置 | |
| TW543206B (en) | EL display device and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |