PL374184A1 - Struktura urządzenia LED z monokrystaliczną objętościową warstwą azotku - Google Patents

Struktura urządzenia LED z monokrystaliczną objętościową warstwą azotku

Info

Publication number
PL374184A1
PL374184A1 PL02374184A PL37418402A PL374184A1 PL 374184 A1 PL374184 A1 PL 374184A1 PL 02374184 A PL02374184 A PL 02374184A PL 37418402 A PL37418402 A PL 37418402A PL 374184 A1 PL374184 A1 PL 374184A1
Authority
PL
Poland
Prior art keywords
emitting element
single crystal
sup
sub
nitride
Prior art date
Application number
PL02374184A
Other languages
English (en)
Other versions
PL214287B1 (pl
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL35037501A external-priority patent/PL350375A1/xx
Priority claimed from PL02354739A external-priority patent/PL354739A1/pl
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL374184A priority Critical patent/PL214287B1/pl
Publication of PL374184A1 publication Critical patent/PL374184A1/pl
Publication of PL214287B1 publication Critical patent/PL214287B1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

W wysokowydajnym azotkowym elemencie emitującym światło, zwłaszcza w azotkowym elemencie emitującym światło obejmującym obszar czynny pomiędzy azotkową warstwą półprzewodnikową typu n i azotkową warstwą półprzewodnikową typu p, podłoże wycięte jest z objętościowego monokrystalicznego azotku zawierającego gal, mającego płaszczyznę do wzrostu epitaksjalnego o gęstości dyslokacji do 10<sup>5</sup>/cm<sup>2</sup>, w którym możliwe jest przeznaczenie do wzrostu epitaksjalnego płaszczyzny A lub M równoległej do osi C heksagonalnego kryształu i posiadającego wyżej wspomnianą warstwę półprzewodnikową typu n naniesioną bezpośrednio na taką powierzchnię, Gdy wyżej wskazany obszar czynny zbudowany jest z półprzewodnika azotkowego zawierającego ind, warstwa ochronna składająca się z pojedynczego kryształu Al<sub>x</sub>Ga<sub>1-x</sub>N (0 ≤ x ≤ 1) może być wytworzona w niskich temperaturach nie powodujących uszkodzenia obszaru czynnego.
PL374184A 2001-10-26 2002-10-28 Struktura urzadzenia emitujacego swiatlo z monokrystaliczna objetosciowa warstwa azotku PL214287B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL374184A PL214287B1 (pl) 2001-10-26 2002-10-28 Struktura urzadzenia emitujacego swiatlo z monokrystaliczna objetosciowa warstwa azotku

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL35037501A PL350375A1 (en) 2001-10-26 2001-10-26 Epitaxial layer substrate
PL02354739A PL354739A1 (pl) 2002-06-26 2002-06-26 Azotkowy laser półprzewodnikowyAzotkowy laser półprzewodnikowy
PL374184A PL214287B1 (pl) 2001-10-26 2002-10-28 Struktura urzadzenia emitujacego swiatlo z monokrystaliczna objetosciowa warstwa azotku

Publications (2)

Publication Number Publication Date
PL374184A1 true PL374184A1 (pl) 2005-10-03
PL214287B1 PL214287B1 (pl) 2013-07-31

Family

ID=26653408

Family Applications (2)

Application Number Title Priority Date Filing Date
PL374184A PL214287B1 (pl) 2001-10-26 2002-10-28 Struktura urzadzenia emitujacego swiatlo z monokrystaliczna objetosciowa warstwa azotku
PL02374180A PL374180A1 (pl) 2001-10-26 2002-10-28 Azotkowy półprzewodnikowy element laserowy oraz sposób jego wytwarzania

Family Applications After (1)

Application Number Title Priority Date Filing Date
PL02374180A PL374180A1 (pl) 2001-10-26 2002-10-28 Azotkowy półprzewodnikowy element laserowy oraz sposób jego wytwarzania

Country Status (8)

Country Link
US (3) US7057211B2 (pl)
EP (2) EP1453159B8 (pl)
JP (2) JP4097601B2 (pl)
KR (2) KR100679387B1 (pl)
CN (2) CN1263206C (pl)
PL (2) PL214287B1 (pl)
TW (1) TWI263387B (pl)
WO (2) WO2003043150A1 (pl)

Families Citing this family (154)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6656615B2 (en) 2001-06-06 2003-12-02 Nichia Corporation Bulk monocrystalline gallium nitride
WO2003043150A1 (en) * 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
ATE452999T1 (de) * 2001-10-26 2010-01-15 Ammono Sp Zoo Substrat für epitaxie
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
WO2004061909A1 (en) * 2002-12-16 2004-07-22 The Regents Of The University Of California Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
US20030198837A1 (en) * 2002-04-15 2003-10-23 Craven Michael D. Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
PL225427B1 (pl) * 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
JP4860927B2 (ja) * 2002-12-11 2012-01-25 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
AU2003293497A1 (en) * 2003-04-15 2005-07-21 Japan Science And Technology Agency Non-polar (a1,b,in,ga)n quantum wells
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
JP3841092B2 (ja) * 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
US7323256B2 (en) 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US7118813B2 (en) * 2003-11-14 2006-10-10 Cree, Inc. Vicinal gallium nitride substrate for high quality homoepitaxy
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
KR100576856B1 (ko) * 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
US7408199B2 (en) 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
JP2005340765A (ja) * 2004-04-30 2005-12-08 Sumitomo Electric Ind Ltd 半導体発光素子
US7504274B2 (en) * 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
JP5379973B2 (ja) * 2004-05-10 2013-12-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 有機金属気相成長法による非極性窒化インジウムガリウム薄膜、ヘテロ構造物およびデバイスの製作
US7956360B2 (en) * 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
EP1759408A1 (en) * 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US8398767B2 (en) 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
EP1652586B2 (en) * 2004-10-26 2016-03-16 FLSmidth A/S Pulse generating system for electrostatic precipitator
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
CN1805230B (zh) * 2004-12-20 2011-06-01 夏普株式会社 氮化物半导体发光元件及其制造方法
CN100352116C (zh) * 2005-01-18 2007-11-28 北京大学 自然解理腔面的GaN基激光二极管的制备方法
DE502005000735D1 (de) * 2005-03-10 2007-06-28 Nanogate Advanced Materials Gmbh Flachbildschirm
CN101138091B (zh) 2005-03-10 2010-05-19 加利福尼亚大学董事会 用于生长平坦半极性氮化镓的技术
TW200703463A (en) * 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
TWI377602B (en) 2005-05-31 2012-11-21 Japan Science & Tech Agency Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)
EP1900013A4 (en) 2005-06-01 2010-09-01 Univ California TECHNOLOGY FOR GROWTH AND MANUFACTURE OF SEMIPOLARS (GA, AL, IN, B) N THIN FILMS, HETEROSTRUCTURES AND COMPONENTS
US7884447B2 (en) 2005-07-11 2011-02-08 Cree, Inc. Laser diode orientation on mis-cut substrates
JP5285835B2 (ja) 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
TWI404122B (zh) * 2005-09-09 2013-08-01 美國加利福尼亞大學董事會 增進半-極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ藉由金屬有機化學氣相沈積生長之方法
JP2007081075A (ja) * 2005-09-14 2007-03-29 Sharp Corp 窒化物半導体レーザ素子およびその製造方法
US7635874B2 (en) * 2005-09-26 2009-12-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Edge-emitting LED assembly
JP2007103814A (ja) * 2005-10-07 2007-04-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
EP1954857B1 (en) 2005-12-02 2018-09-26 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
JP4535997B2 (ja) * 2005-12-09 2010-09-01 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
TWI490918B (zh) 2006-01-20 2015-07-01 美國加利福尼亞大學董事會 半極性氮化（鋁，銦，鎵，硼）之改良成長方法
JP2007266574A (ja) * 2006-02-28 2007-10-11 Sanyo Electric Co Ltd 半導体レーザ素子及び半導体レーザ素子の製造方法
CN101609961B (zh) * 2006-03-06 2012-06-06 夏普株式会社 氮化物半导体器件及其制备方法
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP4929776B2 (ja) * 2006-03-22 2012-05-09 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4694395B2 (ja) * 2006-03-22 2011-06-08 日本オプネクスト株式会社 窒化物半導体発光素子及びその製造方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US7488384B2 (en) * 2006-05-03 2009-02-10 Ohio University Direct pyrolysis route to GaN quantum dots
JP5250856B2 (ja) * 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP5008911B2 (ja) * 2006-07-04 2012-08-22 ローム株式会社 半導体発光素子およびその製造方法
GB2439973A (en) * 2006-07-13 2008-01-16 Sharp Kk Modifying the optical properties of a nitride optoelectronic device
US20080025037A1 (en) * 2006-07-28 2008-01-31 Visteon Global Technologies, Inc. LED headlamp
JP2008109066A (ja) * 2006-09-29 2008-05-08 Rohm Co Ltd 発光素子
EP2100990A1 (en) * 2006-10-16 2009-09-16 Mitsubishi Chemical Corporation Process for producing nitride semiconductor, crystal growth rate enhancement agent, nitride single crystal, wafer and device
US8193020B2 (en) * 2006-11-15 2012-06-05 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
US7566580B2 (en) * 2006-11-15 2009-07-28 The Regents Of The University Of California Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition
JP5042609B2 (ja) * 2006-12-08 2012-10-03 シャープ株式会社 窒化物系半導体素子
JP2010512661A (ja) * 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高特性無極性ｉｉｉ族窒化物光デバイスの有機金属化学気相成長法（ｍｏｃｖｄ）による成長
WO2008073414A1 (en) * 2006-12-12 2008-06-19 The Regents Of The University Of California Crystal growth of m-plane and semipolar planes of(ai, in, ga, b)n on various substrates
JP4978454B2 (ja) * 2006-12-28 2012-07-18 日亜化学工業株式会社 窒化物半導体レーザ素子
KR100920915B1 (ko) * 2006-12-28 2009-10-12 서울옵토디바이스주식회사 초격자 구조의 장벽층을 갖는 발광 다이오드
US7646798B2 (en) * 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US7668218B2 (en) * 2007-02-20 2010-02-23 Nichia Corporation Nitride semiconductor laser element
US7764722B2 (en) 2007-02-26 2010-07-27 Nichia Corporation Nitride semiconductor laser element
EP1976031A3 (en) * 2007-03-29 2010-09-08 Seoul Opto Device Co., Ltd. Light emitting diode having well and/or barrier layers with superlattice structure
US7843980B2 (en) * 2007-05-16 2010-11-30 Rohm Co., Ltd. Semiconductor laser diode
KR101488545B1 (ko) 2007-05-17 2015-02-02 미쓰비시 가가꾸 가부시키가이샤 Ｉｉｉ 족 질화물 반도체 결정의 제조 방법, ｉｉｉ 족 질화물 반도체 기판 및 반도체 발광 디바이스
JP2008300540A (ja) * 2007-05-30 2008-12-11 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
JP4310352B2 (ja) * 2007-06-05 2009-08-05 シャープ株式会社 発光デバイスおよび発光デバイスの製造方法
JP5118392B2 (ja) * 2007-06-08 2013-01-16 ローム株式会社 半導体発光素子およびその製造方法
KR100872717B1 (ko) 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US7701995B2 (en) 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
JP4979011B2 (ja) * 2007-07-20 2012-07-18 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
KR100877774B1 (ko) 2007-09-10 2009-01-16 서울옵토디바이스주식회사 개선된 구조의 발광다이오드
KR101585239B1 (ko) * 2007-10-25 2016-01-22 코닌클리케 필립스 엔.브이. 편광 광 방출 장치
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
KR100998008B1 (ko) * 2007-12-17 2010-12-03 삼성엘이디 주식회사 소자 형성용 기판의 제조방법 및 질화물계 반도체 레이저다이오드의 제조방법
JP5053893B2 (ja) * 2008-03-07 2012-10-24 住友電気工業株式会社 窒化物半導体レーザを作製する方法
JP2009253047A (ja) * 2008-04-07 2009-10-29 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物発光素子及びエピタキシャルウエハ
US8673074B2 (en) * 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
JP2012507874A (ja) 2008-10-31 2012-03-29 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 無極性または半極性ＡｌＩｎＮおよびＡｌＩｎＧａＮ合金に基づく光電子デバイス
JP2010135516A (ja) * 2008-12-03 2010-06-17 Panasonic Corp 窒化物半導体発光装置
KR100999695B1 (ko) * 2009-02-16 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
JP5383313B2 (ja) 2009-05-20 2014-01-08 パナソニック株式会社 窒化物半導体発光装置
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
TWI478381B (zh) * 2009-06-08 2015-03-21 Epistar Corp 發光元件及其製造方法
EP2267197A1 (en) * 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
CN102630349B (zh) * 2009-09-18 2017-06-13 天空公司 功率发光二极管及利用电流密度操作的方法
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) * 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8629065B2 (en) * 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
US8399948B2 (en) 2009-12-04 2013-03-19 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) * 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
CN105951177B (zh) 2010-06-30 2018-11-02 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
KR200458355Y1 (ko) * 2010-07-16 2012-02-15 안수철 변신만화액자
JP5113305B2 (ja) * 2011-01-21 2013-01-09 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子および当該発光素子を備える光源
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US20130146928A1 (en) * 2011-04-06 2013-06-13 Panasonic Corporation Semiconductor light-emitting device
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
JP5431441B2 (ja) * 2011-11-30 2014-03-05 シャープ株式会社 窒化物半導体発光素子
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
JP6211087B2 (ja) 2013-08-22 2017-10-11 日本碍子株式会社 １３族元素窒化物の製造方法および融液組成物の製造方法
US9410664B2 (en) 2013-08-29 2016-08-09 Soraa, Inc. Circadian friendly LED light source
WO2015093447A1 (ja) 2013-12-18 2015-06-25 日本碍子株式会社 複合基板および機能素子
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
TWI560905B (en) * 2014-11-19 2016-12-01 Univ Nat Sun Yat Sen A light emitting element and manufacturing method thereof
US10381508B2 (en) 2014-11-19 2019-08-13 National Sun Yat-Sen University Light emitting element with an enhanced electroluminescence effect
US10505072B2 (en) * 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
JP6931827B2 (ja) 2017-04-07 2021-09-08 日本製鋼所Ｍ＆Ｅ株式会社 結晶製造用圧力容器
JP6939119B2 (ja) 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6870500B2 (ja) * 2017-06-27 2021-05-12 住友電気工業株式会社 量子カスケード半導体レーザ
JP6939120B2 (ja) 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6911567B2 (ja) 2017-06-22 2021-07-28 住友電気工業株式会社 量子カスケード半導体レーザ
US10476237B2 (en) 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10476235B2 (en) 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10404038B2 (en) * 2017-06-22 2019-09-03 Sumitomo Electric Industries, Ltd. Quantum cascade laser
JP7246038B2 (ja) * 2018-09-14 2023-03-27 旭化成株式会社 窒化物半導体レーザダイオード
FR3105586B1 (fr) * 2019-12-23 2023-07-21 Commissariat Energie Atomique Procédé de fabrication d’une diode électroluminescente comportant une étape de dimensionnement d’une couche semiconductrice
US11909172B2 (en) * 2020-01-08 2024-02-20 Asahi Kasei Kabushiki Kaisha Method for manufacturing optical device and optical device
JP7560540B2 (ja) * 2020-03-19 2024-10-02 パナソニックホールディングス株式会社 半導体レーザ素子
US20210313760A1 (en) * 2020-04-06 2021-10-07 Asahi Kasei Kabushiki Kaisha Method for manufacturing semiconductor laser diode and semiconductor laser diode
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
CN113437187B (zh) * 2021-08-26 2022-01-25 北京大学深圳研究生院 一种发光二极管超临界处理方法

Family Cites Families (148)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722692B2 (ja) 1988-08-05 1995-03-15 株式会社日本製鋼所 水熱合成用容器
JPH02137287A (ja) 1988-11-17 1990-05-25 Sanyo Electric Co Ltd 半導体レーザ装置
CN1014535B (zh) 1988-12-30 1991-10-30 中国科学院物理研究所 利用改进的矿化剂生长磷酸钛氧钾单晶的方法
US5096860A (en) * 1990-05-25 1992-03-17 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
KR920004181B1 (ko) * 1990-09-13 1992-05-30 한국과학기술연구원 입방정질화붕소의 제조방법
US5190738A (en) * 1991-06-17 1993-03-02 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
US5156581A (en) 1991-06-21 1992-10-20 Chow John W Finger conditioning device
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
US5456201A (en) * 1992-01-16 1995-10-10 Bobst; Glen L. Air bubble lubricated boat hull
CN1065289A (zh) 1992-04-28 1992-10-14 抚顺石油学院 洁厕灵
CN1036414C (zh) 1992-11-03 1997-11-12 程大酉 改进的回热并联复合双流体燃气轮机装置及其操作方法
US5456204A (en) * 1993-05-28 1995-10-10 Alfa Quartz, C.A. Filtering flow guide for hydrothermal crystal growth
JP3184717B2 (ja) 1993-10-08 2001-07-09 三菱電線工業株式会社 ＧａＮ単結晶およびその製造方法
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JPH07249830A (ja) * 1994-03-10 1995-09-26 Hitachi Ltd 半導体発光素子の製造方法
EP0711853B1 (en) * 1994-04-08 1999-09-08 Japan Energy Corporation Method for growing gallium nitride compound semiconductor crystal, and gallium nitride compound semiconductor device
US5599520A (en) 1994-11-03 1997-02-04 Garces; Juan M. Synthesis of crystalline porous solids in ammonia
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JPH08250802A (ja) * 1995-03-09 1996-09-27 Fujitsu Ltd 半導体レーザ及びその製造方法
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
JP3728332B2 (ja) * 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
KR100326101B1 (ko) * 1995-08-31 2002-10-09 가부시끼가이샤 도시바 반도체장치의제조방법및질화갈륨계반도체의성장방법
EP1081818B1 (en) * 1995-09-18 2004-08-18 Hitachi, Ltd. Semiconductor laser devices
JPH09134878A (ja) 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
US5981980A (en) 1996-04-22 1999-11-09 Sony Corporation Semiconductor laminating structure
JPH107496A (ja) 1996-06-25 1998-01-13 Hitachi Cable Ltd 窒化物結晶の製造方法およびその装置
CN1065289C (zh) 1996-07-22 2001-05-02 中国科学院物理研究所 一种制备掺杂钒酸盐单晶的水热生长方法
JP3179346B2 (ja) * 1996-08-27 2001-06-25 松下電子工業株式会社 窒化ガリウム結晶の製造方法
JPH1084161A (ja) * 1996-09-06 1998-03-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
JP4018177B2 (ja) * 1996-09-06 2007-12-05 株式会社東芝 窒化ガリウム系化合物半導体発光素子
US6031858A (en) * 1996-09-09 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor laser and method of fabricating same
US6542526B1 (en) * 1996-10-30 2003-04-01 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
JPH111399A (ja) * 1996-12-05 1999-01-06 Lg Electron Inc 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード
CN100530719C (zh) * 1997-01-09 2009-08-19 日亚化学工业株式会社 氮化物半导体元器件
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5868837A (en) * 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
PL184902B1 (pl) * 1997-04-04 2003-01-31 Centrum Badan Wysokocisnieniowych Pan Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
JP3491492B2 (ja) * 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
CN1159750C (zh) 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
US5888389A (en) * 1997-04-24 1999-03-30 Hydroprocessing, L.L.C. Apparatus for oxidizing undigested wastewater sludges
PL186905B1 (pl) 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Sposób wytwarzania wysokooporowych kryształów objętościowych GaN
PL183687B1 (pl) 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
GB2333520B (en) 1997-06-11 2000-04-26 Hitachi Cable GaN crystal growth method
TW519551B (en) 1997-06-11 2003-02-01 Hitachi Cable Methods of fabricating nitride crystals and nitride crystals obtained therefrom
JP3234799B2 (ja) * 1997-08-07 2001-12-04 シャープ株式会社 半導体レーザ素子の製造方法
JP3239812B2 (ja) 1997-08-07 2001-12-17 日本電気株式会社 ＩｎＧａＮ層を含む窒化ガリウム系半導体層の結晶成長方法および窒化ガリウム系発光素子およびその製造方法
US6146916A (en) * 1997-12-02 2000-11-14 Murata Manufacturing Co., Ltd. Method for forming a GaN-based semiconductor light emitting device
US6593589B1 (en) * 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
JPH11307813A (ja) 1998-04-03 1999-11-05 Hewlett Packard Co <Hp> 発光装置、その製造方法およびディスプレイ
US6249534B1 (en) * 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
TW428331B (en) * 1998-05-28 2001-04-01 Sumitomo Electric Industries Gallium nitride single crystal substrate and method of producing the same
JP4005701B2 (ja) * 1998-06-24 2007-11-14 シャープ株式会社 窒素化合物半導体膜の形成方法および窒素化合物半導体素子
JP2000031533A (ja) * 1998-07-14 2000-01-28 Toshiba Corp 半導体発光素子
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6335546B1 (en) * 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
JP2000082863A (ja) * 1998-09-04 2000-03-21 Sony Corp 半導体発光素子の製造方法
JP2000091637A (ja) * 1998-09-07 2000-03-31 Rohm Co Ltd 半導体発光素子の製法
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
JP3592553B2 (ja) 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
CN1260409A (zh) 1998-10-23 2000-07-19 黄石市皂素厂 L－半胱氨酸盐酸盐一水物生产工艺
EP1003227B1 (en) * 1998-11-06 2010-01-13 Panasonic Corporation Semiconductor device
TW498102B (en) * 1998-12-28 2002-08-11 Futaba Denshi Kogyo Kk A process for preparing GaN fluorescent substance
US6372041B1 (en) * 1999-01-08 2002-04-16 Gan Semiconductor Inc. Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
US20020096674A1 (en) * 1999-01-08 2002-07-25 Cho Hak Dong Nucleation layer growth and lift-up of process for GaN wafer
JP2000216494A (ja) 1999-01-20 2000-08-04 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
EP1024524A2 (en) * 1999-01-27 2000-08-02 Matsushita Electric Industrial Co., Ltd. Deposition of dielectric layers using supercritical CO2
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
KR100683875B1 (ko) * 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP3957918B2 (ja) 1999-05-17 2007-08-15 独立行政法人科学技術振興機構 窒化ガリウム単結晶の育成方法
US6592663B1 (en) * 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP4329229B2 (ja) 1999-06-30 2009-09-09 住友電気工業株式会社 Ｉｉｉ−ｖ族窒化物半導体の成長方法および気相成長装置
KR100381742B1 (ko) 1999-06-30 2003-04-26 스미토모덴키고교가부시키가이샤 Ⅲ-ⅴ족 질화물반도체의 성장방법 및 기상성장장치
FR2796657B1 (fr) 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
JP3968920B2 (ja) * 1999-08-10 2007-08-29 双葉電子工業株式会社 蛍光体
JP4646359B2 (ja) 1999-09-09 2011-03-09 シャープ株式会社 窒化物半導体発光素子の製造方法
JP2001085737A (ja) 1999-09-10 2001-03-30 Sharp Corp 窒化物半導体発光素子
US6265322B1 (en) * 1999-09-21 2001-07-24 Agere Systems Guardian Corp. Selective growth process for group III-nitride-based semiconductors
WO2001024284A1 (en) 1999-09-27 2001-04-05 Lumileds Lighting, U.S., Llc A light emitting diode device that produces white light by performing complete phosphor conversion
JP4145437B2 (ja) 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
CN1113988C (zh) 1999-09-29 2003-07-09 中国科学院物理研究所 一种氮化镓单晶的热液生长方法
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
EP1104031B1 (en) 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
JP2001168385A (ja) * 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
US6653663B2 (en) 1999-12-06 2003-11-25 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device
JP2001185718A (ja) 1999-12-24 2001-07-06 Hitachi Cable Ltd 窒化ガリウム系化合物半導体を用いた高電子移動度トランジスタ用エピタキシャルウェハの製造方法
US7315599B1 (en) * 1999-12-29 2008-01-01 Intel Corporation Skew correction circuit
US6355497B1 (en) * 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth
JP3335974B2 (ja) 2000-01-24 2002-10-21 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
US20010015437A1 (en) * 2000-01-25 2001-08-23 Hirotatsu Ishii GaN field-effect transistor, inverter device, and production processes therefor
JP4429459B2 (ja) 2000-03-03 2010-03-10 古河電気工業株式会社 高抵抗ＧａＮ結晶層の製造方法
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP3946427B2 (ja) * 2000-03-29 2007-07-18 株式会社東芝 エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
WO2001080311A1 (en) * 2000-04-17 2001-10-25 Virginia Commonwealth University Defect reduction in gan and related materials
TW498583B (en) 2000-05-26 2002-08-11 Takayanagi Kenkyusho Kk Static eliminator
JP2001339121A (ja) * 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
GB2363518A (en) 2000-06-17 2001-12-19 Sharp Kk A method of growing a nitride layer on a GaN substrate
US6693935B2 (en) * 2000-06-20 2004-02-17 Sony Corporation Semiconductor laser
JP3646302B2 (ja) 2000-07-07 2005-05-11 ソニー株式会社 半導体レーザ
JP2002016285A (ja) 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3968968B2 (ja) 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
US6749819B2 (en) * 2000-07-28 2004-06-15 Japan Pionics Co., Ltd. Process for purifying ammonia
JP4154558B2 (ja) * 2000-09-01 2008-09-24 日本電気株式会社 半導体装置
JP4416297B2 (ja) * 2000-09-08 2010-02-17 シャープ株式会社 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置
WO2002021604A1 (en) * 2000-09-08 2002-03-14 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
JP2002094189A (ja) * 2000-09-14 2002-03-29 Sharp Corp 窒化物半導体レーザ素子およびそれを用いた光学装置
JP2002134416A (ja) 2000-10-19 2002-05-10 Ricoh Co Ltd ｐ型３族窒化物の結晶成長方法および製造方法、並びに半導体素子
US6936488B2 (en) 2000-10-23 2005-08-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
JP4063520B2 (ja) * 2000-11-30 2008-03-19 日本碍子株式会社 半導体発光素子
AU2002219978A1 (en) 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
JP4003413B2 (ja) 2000-12-11 2007-11-07 日亜化学工業株式会社 １３族窒化物結晶の製造方法
JP3785566B2 (ja) 2001-03-19 2006-06-14 株式会社日鉱マテリアルズ ＧａＮ系化合物半導体結晶の製造方法
US6806508B2 (en) * 2001-04-20 2004-10-19 General Electic Company Homoepitaxial gallium nitride based photodetector and method of producing
US6656615B2 (en) 2001-06-06 2003-12-02 Nichia Corporation Bulk monocrystalline gallium nitride
PL207400B1 (pl) * 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
PL350375A1 (en) 2001-10-26 2003-05-05 Ammono Sp Z Oo Epitaxial layer substrate
US6734530B2 (en) * 2001-06-06 2004-05-11 Matsushita Electric Industries Co., Ltd. GaN-based compound semiconductor EPI-wafer and semiconductor element using the same
US6488767B1 (en) 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US6562466B2 (en) * 2001-07-02 2003-05-13 Essilor International Compagnie Generale D'optique Process for transferring a coating onto a surface of a lens blank
WO2003043150A1 (en) * 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
ATE452999T1 (de) 2001-10-26 2010-01-15 Ammono Sp Zoo Substrat für epitaxie
US7097707B2 (en) * 2001-12-31 2006-08-29 Cree, Inc. GaN boule grown from liquid melt using GaN seed wafers
US20030209191A1 (en) 2002-05-13 2003-11-13 Purdy Andrew P. Ammonothermal process for bulk synthesis and growth of cubic GaN
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
JP4403067B2 (ja) 2002-05-17 2010-01-20 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 超臨界アンモニアを用いるバルク単結晶生産設備
PL225427B1 (pl) * 2002-05-17 2017-04-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Struktura urządzenia emitującego światło, zwłaszcza do półprzewodnikowego urządzenia laserowego
KR20050054482A (ko) 2002-06-26 2005-06-10 암모노 에스피. 제트오. 오. 질화물 반도체 레이저 디바이스 및 그의 성능을향상시키기 위한 방법
AU2003238980A1 (en) * 2002-06-26 2004-01-19 Ammono Sp. Z O.O. Process for obtaining of bulk monocrystallline gallium-containing nitride
US7099073B2 (en) * 2002-09-27 2006-08-29 Lucent Technologies Inc. Optical frequency-converters based on group III-nitrides
WO2004053208A1 (en) * 2002-12-11 2004-06-24 Ammono Sp. Z O.O. Process for obtaining bulk-crystalline gallium-containing nitride
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
JP4860927B2 (ja) * 2002-12-11 2012-01-25 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法
US7098487B2 (en) * 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
CN1289867C (zh) 2003-02-21 2006-12-13 乐金电子(天津)电器有限公司 微波炉的刻度旋钮支持装置
CN100390329C (zh) 2003-04-03 2008-05-28 三菱化学株式会社 氧化锌单晶
EP1759408A1 (en) * 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US8398767B2 (en) 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US20070234946A1 (en) 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
JP5883552B2 (ja) * 2006-10-25 2016-03-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｉｉｉ族窒化物結晶を安熱法成長させる方法
TWI480435B (zh) * 2007-09-19 2015-04-11 Univ California 氮化鎵塊狀晶體（ｂｕｌｋ ｃｒｙｓｔａｌｓ）及其生長方法

Also Published As

Publication number Publication date
CN1300901C (zh) 2007-02-14
JPWO2003043150A1 (ja) 2005-03-10
EP1453159A4 (en) 2007-10-03
KR20040047968A (ko) 2004-06-05
KR100679387B1 (ko) 2007-02-05
TWI263387B (en) 2006-10-01
EP1453158A4 (en) 2007-09-19
KR20040049323A (ko) 2004-06-11
US7057211B2 (en) 2006-06-06
US7935550B2 (en) 2011-05-03
TW200400675A (en) 2004-01-01
KR100679377B1 (ko) 2007-02-05
JP4383172B2 (ja) 2009-12-16
PL374180A1 (pl) 2005-10-03
JP4097601B2 (ja) 2008-06-11
EP1453159A1 (en) 2004-09-01
US20040251471A1 (en) 2004-12-16
WO2003043150A1 (en) 2003-05-22
CN1263206C (zh) 2006-07-05
CN1575534A (zh) 2005-02-02
US7750355B2 (en) 2010-07-06
JPWO2003036771A1 (ja) 2005-02-17
EP1453159B1 (en) 2017-09-06
EP1453158A1 (en) 2004-09-01
PL214287B1 (pl) 2013-07-31
WO2003036771A1 (en) 2003-05-01
US20080108162A1 (en) 2008-05-08
US20040238810A1 (en) 2004-12-02
CN1575533A (zh) 2005-02-02
EP1453159B8 (en) 2017-12-13

Similar Documents

Publication Publication Date Title
PL374184A1 (pl) Struktura urządzenia LED z monokrystaliczną objętościową warstwą azotku
US6110277A (en) Process for the fabrication of epitaxial layers of a compound semiconductor on monocrystal silicon and light-emitting diode fabricated therefrom
ES2352434T3 (es) Componente semiconductor de nitruro y procedimiento para su fabricación.
US7989244B2 (en) Method of manufacturing nitride-based semiconductor light-emitting device
JP3293035B2 (ja) 窒化ガリウム系化合物半導体結晶の成長方法及び窒化ガリウム系化合物半導体装置
US7250320B2 (en) Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof
TWI377697B (en) Method for growing a nitride-based iii-v group compound semiconductor
US6423983B1 (en) Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
KR101636032B1 (ko) 고전위 밀도의 중간층을 갖는 발광 다이오드 및 그것을 제조하는 방법
RU2315135C2 (ru) Метод выращивания неполярных эпитаксиальных гетероструктур на основе нитридов элементов iii группы
US7163876B2 (en) Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device
EP1881536A1 (en) Method of producing nitride semiconductor element
Polyakov et al. Growth of AlBN solid solutions by organometallic vapor-phase epitaxy
CN101395727A (zh) 发光元件和该发光元件的制造方法
US6554896B1 (en) Epitaxial growth substrate and a method for producing the same
JPH10135140A (ja) ヘテロエピタキシャル成長方法、ヘテロエピタキシャル層および半導体発光素子
JP2000101138A (ja) 半導体発光素子
TW200603445A (en) Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure
TW200414569A (en) Group-III nitride semiconductor device, production method thereof and light-emitting diode
US20060289891A1 (en) Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures
US10763395B2 (en) Light emitting diode element and method for manufacturing same
KR101163788B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
US20080012025A1 (en) GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device
JP4700464B2 (ja) 化合物半導体素子
KR100585914B1 (ko) 질화물계 발광소자의 제조 방법