JP5008911B2 - 半導体発光素子およびその製造方法 - Google Patents
半導体発光素子およびその製造方法 Download PDFInfo
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- JP5008911B2 JP5008911B2 JP2006184331A JP2006184331A JP5008911B2 JP 5008911 B2 JP5008911 B2 JP 5008911B2 JP 2006184331 A JP2006184331 A JP 2006184331A JP 2006184331 A JP2006184331 A JP 2006184331A JP 5008911 B2 JP5008911 B2 JP 5008911B2
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Description
1 基板
2 n−GaN層(n型半導体層)
3 活性層
4 p−GaN層(p型半導体層)
5 n側電極
6 p側電極
7 絶縁層
7A 絶縁層
8 配線
21 バッファ層
22 アンドープGaN層
51 Au層(n側電極の第1層)
52 Ni層(n側電極の第2層)
61 Al層(p側電極の第1層)
62 Ni層(p側電極の第2層)
81 Ni層(配線の第1層)
82 Au層(配線の第2層)
Claims (3)
- n型半導体層およびp型半導体層と、
上記n型半導体層および上記p型半導体層に挟まれた活性層と、
上記n型半導体層と接するn側電極と、
上記p型半導体層と接するp側電極と、
上記n型半導体層および上記p型半導体層を覆い、かつ上記n側電極および上記p側電極の一部ずつを露出させる絶縁層と、
を備える半導体発光素子であって、
上記n側電極は、上記n型半導体層と接し、かつAlからなる第1層と、この第1層上に形成され、かつNi、W、Zr、またはPtからなる第2層とによって構成されており、
上記p側電極は、上記p型半導体層と接し、かつAuからなる第1層と、この第1層上に形成され、かつNi、W、Zr、またはPtからなる第2層とによって構成されていることを特徴とする、半導体発光素子。 - 上記n側電極または上記p側電極に接する1以上の配線をさらに備えており、
上記配線は、上記n側電極または上記p側電極と接し、かつこれが接する上記n側電極または上記p側電極の上記第2層と同じ材質からなる第1層と、この第1層上に形成されており、かつAuからなる第2層とによって構成されている、請求項1に記載の半導体発光素子。 - n型半導体層およびp型半導体層と、
上記n型半導体層およびp型半導体層に挟まれた活性層と、
上記n型半導体層と接するn側電極と、
上記p型半導体層と接するp側電極と、
上記n型半導体層および上記p型半導体層を覆い、かつ上記n側電極および上記p側電極の一部ずつを露出させる絶縁層と、
を備える半導体発光素子の製造方法であって、
上記n型半導体層上に、Alからなる第1層と、Ni、W、Zr、またはPtからなる第2層とを積層させることにより、これら第1層および第2層からなるn側電極を形成する工程と、
上記p型半導体層上に、Auからなる第1層と、Ni、W、Zr、またはPtからなる第2層とを積層させることにより、これら第1層および第2層からなるp側電極を形成する工程と、
上記n側電極および上記p側電極を形成した後に、上記n型半導体層、上記p型半導体層、上記n側電極および上記p側電極を覆う絶縁層を形成する工程と、
上記絶縁層に対してエッチングを施すことにより、上記n側電極および上記p側電極の一部ずつを露出させる工程と、を有することを特徴とする、半導体発光素子の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006184331A JP5008911B2 (ja) | 2006-07-04 | 2006-07-04 | 半導体発光素子およびその製造方法 |
CN2007800245191A CN101479861B (zh) | 2006-07-04 | 2007-07-03 | 半导体发光元件及其制造方法 |
PCT/JP2007/063291 WO2008004545A1 (fr) | 2006-07-04 | 2007-07-03 | Élément à semiconducteur électroluminescent et son procédé de fabrication |
US12/307,193 US8101963B2 (en) | 2006-07-04 | 2007-07-03 | Semiconductor light emitting element and method for manufacturing same |
KR1020087031739A KR100984433B1 (ko) | 2006-07-04 | 2007-07-03 | 반도체 발광 소자 및 그 제조 방법 |
TW096124370A TW200818550A (en) | 2006-07-04 | 2007-07-04 | Semiconductor light emitting element and method for manufacturing the same |
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JP2006184331A JP5008911B2 (ja) | 2006-07-04 | 2006-07-04 | 半導体発光素子およびその製造方法 |
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JP2008016537A JP2008016537A (ja) | 2008-01-24 |
JP5008911B2 true JP5008911B2 (ja) | 2012-08-22 |
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US (1) | US8101963B2 (ja) |
JP (1) | JP5008911B2 (ja) |
KR (1) | KR100984433B1 (ja) |
CN (1) | CN101479861B (ja) |
TW (1) | TW200818550A (ja) |
WO (1) | WO2008004545A1 (ja) |
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JP2010040894A (ja) * | 2008-08-07 | 2010-02-18 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
US7939839B2 (en) * | 2008-09-11 | 2011-05-10 | Bridgelux, Inc. | Series connected segmented LED |
KR20100076083A (ko) | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
KR100999806B1 (ko) * | 2009-05-21 | 2010-12-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101456270B1 (ko) | 2010-03-23 | 2014-11-12 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
CN104521012B (zh) * | 2012-08-07 | 2018-04-24 | 首尔伟傲世有限公司 | 晶圆级发光二极管阵列及其制造方法 |
KR101601073B1 (ko) * | 2014-09-22 | 2016-03-15 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
KR101761856B1 (ko) * | 2016-03-02 | 2017-07-26 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
DE102019114315A1 (de) * | 2019-05-28 | 2020-12-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Anordnung und verfahren zur herstellung einer anordnung |
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JP3722426B2 (ja) | 1994-09-19 | 2005-11-30 | 株式会社東芝 | 化合物半導体装置 |
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US20090256170A1 (en) | 2009-10-15 |
WO2008004545A1 (fr) | 2008-01-10 |
TW200818550A (en) | 2008-04-16 |
CN101479861A (zh) | 2009-07-08 |
CN101479861B (zh) | 2010-12-08 |
TWI350013B (ja) | 2011-10-01 |
US8101963B2 (en) | 2012-01-24 |
KR20090015998A (ko) | 2009-02-12 |
KR100984433B1 (ko) | 2010-09-30 |
JP2008016537A (ja) | 2008-01-24 |
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