TW200818550A - Semiconductor light emitting element and method for manufacturing the same - Google Patents

Semiconductor light emitting element and method for manufacturing the same Download PDF

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Publication number
TW200818550A
TW200818550A TW096124370A TW96124370A TW200818550A TW 200818550 A TW200818550 A TW 200818550A TW 096124370 A TW096124370 A TW 096124370A TW 96124370 A TW96124370 A TW 96124370A TW 200818550 A TW200818550 A TW 200818550A
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Taiwan
Prior art keywords
layer
side electrode
type semiconductor
semiconductor light
semiconductor layer
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Application number
TW096124370A
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English (en)
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TWI350013B (zh
Inventor
Yukio Shakuda
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Rohm Co Ltd
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Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200818550A publication Critical patent/TW200818550A/zh
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Publication of TWI350013B publication Critical patent/TWI350013B/zh

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    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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200818550 九、發明說明 【發明所屬之技術領域】 本發明係有關半導體發光元件及其製造方法。 【先前技術】 以往，作爲半導體發光元件，知道有半導體雷射或發 光二極體等（例如，參照下記之專利文獻1 )，一般，半導 體發光元件係具有省電且高亮度之特徵，例如，作爲、液晶 顯示裝置的光源所示用。 [專利文獻1] 日本特開2003-243773號公報 圖1 〇係表示以往之半導體發光元件的一例，而在所圖 示之半導體發光元件X中，於基板101上，層積有n-GaN 層102、活性層103、以及p-GaN層104，而n-GaN層102 及p-GaN層104係經由絕緣層107所被覆，絕緣層107係例 如由Si02而成，並形成有2個開口 107a，而此等開口 107a 係使n_GaN層102及p-GaN層104做爲部分地露出，而對 於n-GaN層102及p-GaN層104，係藉由開口 107a而各自 連接有配線108，配線108係由接觸於n-GaN層102或p-GaN層104之Ni層108a，和形成於Ni層108a上之Au層 l〇8b而成。 對於上述半導體發光元件X係有著如以下所述的問 題，即，針對在半導體發光元件X的製造工程’開口 107a 之形成，係經由對於被覆n-GaN層102及p-GaN層1〇4之 200818550 絕緣層而言，施以蝕刻所進行，此時，n-GaN層102及p-GaN層1 04則受到經由蝕刻之損傷，因此，在此等各層與 配線1 08之界面的電性電阻變大，半導體發光元件X之驅 動電壓則不當地變高。 作爲爲了對於上述問題作對策之方策之一，考兩有例 如，將Au而成之中繼電極（略圖示）形成於各開口 107a， 之後，形成配線1 〇 8者，此情況，期待經由該中繼電極， n-GaN層102或p-GaN層104與配線108之導通狀態成爲良 好者。 但，在另一方面，產生其他的問題，即，在高環境溫 度下進行配線1 〇 8之形成的情況，有著從上述中繼電極對 於絕緣層107有擴散Au之虞，其結果，絕緣層107之至少 一部分則成爲具有導電性，有著洩漏電流變大的問題。 【發明內容】 本發明係依上述的情事所構思的構成，因此，本發明 係其課題爲提供：可防止驅動電壓的增加，且抑制洩漏電 流之情況的半導體發光元件者。 經由本發明之第1的側面所提供之半導體發光元件係 具備：η型半導體層及p型半導體層，和挾持於上述η型 半導體層及上述ρ型半導體層之活性層，和與上述η型半 導體層接觸之η側電極，和與上述ρ型半導體層接觸之ρ 側電極，和被覆上述η型半導體層及上述ρ型半導體層， 且使上述η側電極及上述ρ側電極之一部分露出之絕緣層 200818550 ，而上述η側電極係由A1而成，且由與上述^型半導體 層接觸之第1層，和形成於其第1層上，且由Ni、W、Zr 及Pt之任一而成之第2層所構成，而上述p側電極係由 Au而成，且由與上述p型半導體層接觸之第1層，和形成 於其第1層上’且由Ni、W、Zr及pt之任一而成之第2層 所構成。 如根據如此構成’可享受到如以下之技術性效果者， 即，在形成上述η側電極及上述p側電極之後，對於上述 絕緣層而言’施以蝕刻之情況，只曝露各電極之中的上述 第2層於鈾刻，另一方面，其第2層係因由Ni、W、Zr及 Pt而成，故無經由蝕刻而其表面過大損害者，因此，可 縮小各電極及在與其導通之構件的界面電阻者，並可以低 電壓驅動半導體發光元件者，另外，針對在各電極，可經 由第2層而被覆第1層之上面全體者，此情況，針對在各電 極，可將與上述絕緣層接觸的幾乎部分，可作爲第2層（例 如，如適當薄化第1層之厚度即可），而形成上述第2層之 Ni、W、Zr或Pt係與Au不同，對於上述絕緣層而言不易 擴散，隨之，可防止上述絕緣層不當導體化之情況，可控 制上述半導體發光元件之洩漏電流者。 理想爲本發明之半導體發光元件係更加具備接觸於上 述η側電極（或p側電極）之配線，此配線乃包含第1層與 形成於此第1層上的第2層，配線之該第1層乃接觸於上述 η側電極（或ρ側電極）之上述第2層的同時，由與上述η側 電極（或ρ側電極）之上述第2層相同的材質所成，另外， -6- 200818550 上述配線之上述第2層乃由Au所成’如根據如此構成， 上述η側電極或p側電極與上述配縣係接合再由相互相同 材質而成的部分，由此，與接合同爲異種金屬之情況作比 較，更可縮小針對在上述各電極與上述配線之界面的電阻 者。 如根據本發明之第2的側面，提供具備η型半導體層 、和Ρ型半導體層、和挾於此等η型半導體層及ρ型半導 體層的活性層的半導體發光元件之製造方法，其製造方法 乃包含形成接觸上述η型半導體層之η側電極、形成接觸 上述Ρ型半導體層之Ρ側電極、形成被覆上述η型半導體 層、上述Ρ型半導體層、上述η側電極及上述ρ側電極的 絕緣層，對於上述絕緣層而言，經由施以蝕刻，露出上述 η側電極及上述Ρ側電極之一部分的各工程；上述η側電 極之形成乃經由在於上述η型半導體層上形成Α1所成第1 層、更且於此第1層上，形成Ni、W、Zr及Pt之任一者 所成第2層而進行，上述P側電極之形成乃經由在於上述 ρ型半導體層上形成Au所成第1層、更且於此第1層上， 形成Ni、W、Zr及Pt之任一者所成第2層而進行者。 如根據如此構成，針對在上述蝕刻，係上述n側電極 及上述ρ側電極之中，只有上述第2層曝露於飩刻，而上 述第2層係由Ni、W、Zr或Pt而成，故無經由蝕刻而其 表面有過大損害者’隨之，可縮小上述η側電極及上述ρ 側電極，和在與其導通之構件的界面電阻者，並可以低電 壓驅動半導體發光元件者。 200818550 本發明之其他特徵及利點係經由參照附加圖面而進行 以下詳細說明，而更爲清楚。 【實施方式】 [爲了實施發明之最佳型態] 以下，關於本發明之理想的實施型態，參照圖面而具 體進行說明。 圖1係表示依據本發明之半導體發光元件的一例，而 所圖示之半導體發光元件A係形成於基板1上，並具備： n-GaN層2、活性層3、p-GaN層4、η側電極5、p側電極6 、絕緣層7、以及配線8，而半導體發光元件Α係作爲透 過絕緣層7而射出光線的構成。 基板1係例如爲藍寶石製，並支撐n-GaN層2、活性 層3、以及ρ-GaN層等，基板1之厚度係例如作爲3 5 0 //m程 度。 n-GaN層2係爲摻雜Si於GaN的層，而n-GaN層2的 厚度係例如爲3.5//ΙΓ)程度，而對基板1與n-GaN層2之間， 係層積有緩衝層21及未摻雜GaN層22，此等之緩衝層21 及未摻雜GaN層22係爲爲了緩和基板1與η-GaN層2的晶 格偏移之構成，而緩衝層21及未摻雜GaN層22之厚度係 各自作爲0.05 μιη、2.0 μπι程度。 活性層3係具有多重量子井（MQW)構造’而在活性層3 之中，電子與正孔則進行再結合而發光光線之同時，進行 其光線的放大，此時的電子係從η側電極5所供給’而正 -8 - 200818550 孔係從P側電極所供給，活性層3係交互層積複數之 InGaN層與複數之GaN層，而各InGaN層係較n-GaN層 ’帶隙爲小，並作爲針對在活性層3之井層而發揮機能， 另外，上述各GaN層係爲在活性層3之阻障層，而構成活 性層3之InGaN層的數量及GaN層的數量係例如爲3〜7的 範圍，另外，活性層3的厚度係例如爲0.1 μιη程度。 p-GaN層4係爲摻雜Mg於GaN的層，而p-GaN層4的 厚度係例如爲〇. 1 W程度。 η側電極5係形成於n-GaN層2上，η側電極5係爲朝 向活性層3，爲了供給電子的構成，並作爲由A1層（第i層 )51及Ni層（第2層）52而成之層積構造，A1層51係接觸於 η-GaN層2，其厚度係作爲4000A程度，Ni層52係形成於 A1層51上，其厚度係作爲5000A程度，然而，亦可取代 Ni層52，將2層作爲由w、Zr或Pt而成之構成。 P側電極6係形成於p-GaN層4上，而p側電極6係爲 朝向活性層3，爲了供給正孔的構成，並由Au層（第i層 )61及Ni層（第2層）62而成，Au層61係接觸於p-GaN層4 上’其厚度係作爲400 0A程度，而Ni層62係形成於Au層 61上，其厚度係作爲5 00A程度，而理想爲Ni層62係作爲 被覆Au層61之上面全體的構成，然而，亦可取代Ni層 62 ’將2層作爲由w、Zr或Pt而成之構成，針對在本發 明係η側電極5的第2層與p側電極6的第2層係理想爲作爲 同一材質者。 絕緣層7係例如有si〇2而成，並被覆n_GaN層2及ρ_ 200818550
GaN層4 ’對於絕緣層7係形成有2個開口 7a，而對於各開 口 7a內係設置有上述η側電極5或p側電極6，並各電極 之上面則部分地，從絕緣層7露出。 配線8係因爲爲使半導體發光元件a與鄰接與此之其 他的半導體發光元件導通，使圖外之端子與半導體發光元 件A之構成，而配線8係Ni層（第1層）81及Au層（第2層 )8 2而成，而Ni層81係與n側電極5之Ni層52，或p側電 極6之Ni層62接觸，並作爲與Ni層52，62相同材料，An 層82係形成於Ni層8 1上，Ni層8 1及Au層82之厚度係各 自作爲5 00A程度及8 000A程度，而配線8之第1層的材質 係理想爲作爲與接觸於該配線之p側電極5或η側電極6之 第2層的材質相同之情況。 接著，關於半導體發光元件Α之製造方法的一例， 參照圖2〜圖5的同時，於已下進行說明。 首先，如圖2所示，於基板1上，層積緩衝層2 1、未摻 雜GaN層22、η-GaN層2、活性層3、以及p-GaN層4，而 此等層之形成係例如經由有機金屬氣相成長法（MOCVD)。 接著，如圖3所示，形成η側電極5及p側電極6，具 體而言，例如使用蒸鍍法及剝離法之手法，形成Α1層5 1 、Au層61、及Ni層52，53，此時，將Α1層51、Au層61 之厚度作爲4000A程度，將Ni層52，53之厚度作爲500A 程度。
接著，如圖4所示，呈被覆η-GaN層2、p-GaN層4、η 側電極5、以及ρ側電極地，形成絕緣層7 A，而絕緣層7 A -10- 200818550 之形成係例如，經由使用Si 〇2之蒸鍍法而進行。 接著，對於絕緣層7A而言，例如經由藉由根據微縮 術之手法而形成之光罩（略圖示），施以蝕刻之情況，形成 圖5所示之2個開口 7a，其蝕刻係爲例如離子蝕刻，並作爲 蝕刻氣體，在以流量40 Sccm(相當針對在特定之標準狀態 的1分鐘之體積流量（cc = cm3))供給CF4，將壓力作爲3.0 Pa 程度之狀態，經由將高頻率電力作爲1 00 W程度之條件而 進行，而2個開口 7a係爲使η側電極5之Ni層52及p側電 極6之Ni層62露出之構成，由此，得到絕緣層7。 之後，經由例如使用蒸鍍法及剝離法之手法，形成使 厚度爲50 0A程度Ni層81與厚度爲800 0A程度之Au層82 層積之配線8情況，得到半導體發光元件A。 接著，關於半導體發光元件A之作用，進行說明。 圖6係表示關於半導體發光元件A與比較例1，2，測 定順方向電壓Vf與順方向電流If之結果，針對在同圖， 圖表GA係爲半導體發光元件A之測定結果，圖表Gx， GY係爲各比較例1，2的測定結果，比較例1係爲與圖1 0所 示之半導體發光元件X相同的構成，比較例2係爲基本上 與比較例1 (半導體發光元件X)相同的構成，但，設置中 繼電極於各開口 1 〇7a內之情況則爲不同，而個中繼電極 係爲2層構造，由Ni製之下層及Au製之上層而成，下層 係接觸於半導體發光元件X的層102或層104，上層係爲 接觸於配線1 〇 8之構成。 首先，比較圖表Ga(半導體發光元件A)與圖表Gx(比 -11 - 200818550 較例1)，例如，針對在工業上的使用，對於可作爲適當的 發光情況，爲了得到成爲目標之1.0* w5a程度之順方向 電流If，係有必要針對在比較例1，將順方向電壓Vf作爲 12V程度者，對此，如根據本發明，如將順方向電壓Vf 作爲7V程度，則足夠，即，如根據本發明，可較比較例 ，使驅動電壓下降，此理由係可認爲如以下所述，針對在 比較例1，如圖1 〇所示，對於η - G aN層1 0 2及p - G aN層而 言，直接接核配線1 〇8，而對於形成圍住其接合部分之開 口 107a，一般，對於絕緣層107而言，施以蝕刻，此時， n-GaN層102及p-GaN層104之表面，經由鈾刻而成爲損傷 ，而當於其被損傷的面，形成配線108時，針對在n-GaN 層102及ρ-GaN層104與配線108之界面的電組則增大，而 成爲需要大的驅動電壓，另一方面，如根據本發明，如圖 5所示，n-GaN層2及p-GaN層4則無曝露於蝕刻，另外， 曝露於鈾刻之Ni層52，62係比較而言，蝕刻速度爲慢， 不液晶由蝕刻而損傷，隨之，半導體發光元件A之驅動 電壓係變低。 接著，比較圖表GA(半導體發光元件A)與圖表Gx(比 較例2 )，針對在比較例2係即使爲順方向電壓V f爲1 . 0 V以 下之比較低電壓之狀態，順方向電流If則流動1.0 * 1 〇·7 A程 度，而其電流係爲所謂的洩漏電流，並經由發明著的硏究 ，了解到對於在活性層1 03 (參照圖1 〇)之發光係幾乎無貢 獻，產生如此之洩漏電流的理由係可認爲如以下所述，如 上述，針對在比較例2，係於各開口 1 〇 7 a內設置中繼電極 -12- 200818550 ，並其上層則作爲Au製，但Au係針對在6 0 0 °C程度之溫 度，對於絕緣層107擴散，其結果，絕緣層107之一部分則 作爲導電化，使洩漏電流產生，對此，針對在半導體發光 元件A係如圖1所示，η側電極5及p側電極6之中，與絕 緣層7接觸的幾乎部分係爲Ni層52，62，而Ni係對於由 Si02等而成之絕緣層7而言，不易擴散，隨之，可迴避絕 緣層7作爲不當導體化之情況，而可控制洩漏電流者。 圖7係表示針對在半導體發光元件A，進行複數次對 於順方向電壓Vf之順方向電流If的測定（Vf-If特性的測 定）之結果，具體而言，以固定對於η側電極5及p側電極 6之計測檢測的位置狀態，使順方向電壓Vf變化的同時， 測定順方向電流If(第1次測定），接著，使計測檢測的位 置作爲不同，測定相同的測定（第2次測定），之後，更加 地，使計測檢測的位置作爲不同，測定相同的測定（第3次 測定），如同圖所示，對於3個Vf-If特性測定結果係幾乎 無不均，另一方面，圖8係針對在比較例2，進行同樣的測 定之結果，而針對在比較例2係當變更計測檢測的位置時 ，Vf-If特性則產生大的變化，而其不同係針對在半導體 發光元件A係因Ni層52，62並無經由時刻而損傷，故可 認爲P側電極5及η側電極6之全面則經由全體爲平滑者。 η側電極5及ρ側電極6與配線8之接合係經由Ni層5 2 ，62與Ni層81之接合所實現，如此相同材質之同爲構件 的接合係比較於同爲異種金屬之接合而適合於使接合部的 電阻下降之情況，進而，對於使半導體發光元件A之驅 13- 200818550 動電壓下降之情況爲有利。 η側電極5之A1層51係容易形成與n-GaN層2有電組 的接觸，另外，P側電極6之Au層6 1係容易形成與p-GaN 層4有電組的接觸’此等係對於使半導體發光元件a之驅 動電壓下降之情況爲有利。 圖9係表示使用半導體發光元件A之發光裝置的一例 ，針對在本裝置係配置複數之半導體發光元件A爲矩陣 狀，然而，針對在同圖係省略圖1所示之基板1及絕緣層7 ，而配置成矩陣狀之複數的半導體發光元件A之中同爲 鄰接之構成係經由配線1 08所連接，而針對在本裝置係某 個半導體發光元件A之n側電極5則與鄰接之半導體發光 元件Α之ρ側電極6連接，由此，此等半導體發光元件a 係作爲相互串聯連接，如根據如此之發光裝置，可作爲面 發光的同時’可謀求驅動電壓的下降，和洩漏電流之控制 者。 【圖式簡單說明】 [圖1]係爲表示依據本發明之半導體發光元件的一例 之要部剖面圖。 [圖2]係爲表示上述半導體發光元件之製造工程的一 工程之剖面圖’並表示於基板上，使半導體層積之狀態。 [圖3]係爲表示上述製造方法之其他的一工程之剖面 圖，並表示形成有η側電極及p側電極之狀態。 [圖4]係爲表示上述製造方法之其他的一工程之剖面 -14- 200818550 圖，並表示形成有絕緣層之狀態。 [圖5]係爲表示上述製造方法之其他的一工程之剖面 圖，並表示於絕緣層施以鈾刻的樣子。 [圖6]係爲表不圖1所不之半導體發光元件與比較例1 ，2之順方向電壓-電流特性之圖表。 [圖7]係爲表示圖1所示之半導體發光元件之順方向電 壓-電流特性之圖表。 [圖8 ]係爲表示比較例2之順方向電壓-電流特性之圖 表。 [圖9]係爲表示使用圖1所示之半導體發光元件之發光 裝置的一例之要部平面圖。 [圖1 0 ]係爲表示以往之半導體發光元件的一例之要部 剖面圖。 接著，參照圖1〜圖1 6，說明本發明之實施型態。 【主要元件符號說明】 2 ·· n-GaN 層 3 :活性層 4，1 04 : p-GaN 層 5 : η側電極 6 : Ρ側電極 7，7 A，1 〇 7 :絕緣層 7 狂，1 0 7 a :開口 8，1〇8 :配線 -15- 200818550 21 ： 22 ： 5 1， 82 : 52， A， 緩衝層 未摻雜 81 ： A1 Au層 62 ： Ni X :半導
GaN層 層 層 體發光元件 -16-

Claims (1)

  1. 200818550 十、申請專利範圍 1· 一種半導體發光元件，屬於具備η型半導體層及P 型半導體層、 和挾於上述η型半導體層及上述Ρ型半導體層之活性層、 和接觸上述η型半導體層之η側電極、 和接觸上述ρ型半導體層之Ρ側電極、 被覆上述η型半導體層及上述Ρ型半導體層，且露出 上述η側電極及上述ρ側電極之各一部分的絕緣層、 的半導體發光元件，其特徵乃 上述η側電極乃：由Α1所成且與上述η型半導體層 接觸之第1層、和形成於此第1層上，且由Ni、W、Zr及 Pt之任一者所成第2層所構成， 上述P側電極乃：由Au所成且與上述ρ型半導體層 接觸之第1層、和形成於此第1層上，且由Ni、W、Zr及 Pt之任一者所成第2層所構成。 2 ·如申請專利範圍第1項之半導體發光元件，其中， 在更具備接觸於上述η側電極之配線的構成中，此配線乃 包含第1層與形成於此第1層上的第2層，上述配線之上述 第1層乃接觸於上述η側電極之上述第2層的同時，由與上 述η側電極之上述第2層相同的材質所成，上述配線之上 述第2層乃由Au所成者。 3 ·如申請專利範圍第1項之半導體發光元件，其中， 在更具備接觸於上述ρ側電極之配線的構成中，此配線乃 包含第1層與形成於此第1層上的第2層，上述配線之上述 -17· 200818550 第1層乃接觸於上述p側電極之上述第2層的同時，由與上 述P側電極之上述第2層相同的材質所成，上述配線之上 述第2層乃由Au所成者。 4. 一種半導體發光元件之製造方法，屬於具備η型半 導體層、和ρ型半導體層、和挾於此等η型半導體層及ρ 型半導體層的活性層的半導體發光元件之製造方法，其特 徵乃 包含形成接觸上述η型半導體層之η側電極、 形成接觸上述ρ型半導體層之ρ側電極、 形成被覆上述η型半導體層、上述ρ型半導體層、上 述η側電極及上述ρ側電極的絕緣層、 對於上述絕緣層，經由施以蝕刻，露出上述η側電極 及上述Ρ側電極之一部分的各工程； 上述η側電極之形成乃經由在於上述η型半導體層上 形成Α1所成第1層、更且於此第1層上，形成Ni、W、 Zr及Pt之任一者所成第2層而進行，上述ρ側電極之形 成乃經由在於上述P型半導體層上形成Au所成第1層、 更且於此第1層上，形成Ni、W、Zr及Pt之任一者所成 第2層而進行者。 -18-
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CN101894895A (zh) * 2009-05-21 2010-11-24 Lg伊诺特有限公司 发光器件以及具有该发光器件的发光器件封装
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US8648383B2 (en) 2009-05-21 2014-02-11 Lg Innotek Co., Ltd. Light emitting device and light emitting device package having the same
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US20090256170A1 (en) 2009-10-15
JP2008016537A (ja) 2008-01-24
WO2008004545A1 (fr) 2008-01-10
KR100984433B1 (ko) 2010-09-30
KR20090015998A (ko) 2009-02-12
CN101479861B (zh) 2010-12-08
JP5008911B2 (ja) 2012-08-22
CN101479861A (zh) 2009-07-08
US8101963B2 (en) 2012-01-24

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