KR20100114549A - 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광 다이오드 구조 - Google Patents
양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광 다이오드 구조 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 72
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 81
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 5
- 229910052738 indium Inorganic materials 0.000 abstract description 22
- 239000012535 impurity Substances 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
Description
도 1은 본 발명의 실시예를 통합한 Ⅲ족 나이트라이드 발광 다이오드의 개략적인 도면이다.
도 2는 본 발명의 다른 실시예를 통합한 Ⅲ족 나이트라이드 발광 다이오드의 개략적인 도면이다.
도 3은 본 발명의 추가적인 실시예에 따른 양자 우물 구조와 다중 양자 우물 구조의 개략적인 도면이다.
Claims (9)
- 발광 다이오드로서,
n-형 III족 나이트라이드층;
교호하는 층들을 적어도 두 주기 포함하는, 상기 n-형 III족 나이트라이드층의 위의 III족 나이트라이드계 초격자;
상기 n-형 III족 나이트라이드층의 반대쪽으로서 상기 초격자 위의, 적어도 하나의 양자 우물 구조를 포함하는 III족 나이트라이드계 발광 다이오드 활성 영역; 및
상기 초격자로부터 먼 쪽으로서 상기 발광 다이오드 활성 영역 위의, 알루미늄을 포함하는 도핑되지 않은 III족 나이트라이드층을 포함하고,
상기 도핑되지 않은 III족 나이트라이드층이 복수의 서브층(sublayers)을 포함하고, 상기 복수의 서브층은 각기 다른 알루미늄(Al) 조성(compositions)을 갖는, 발광 다이오드. - 제1항에 있어서,
상기 도핑되지 않은 III족 나이트라이드층은 복수의 알루미늄 갈륨 나이트라이드(AlGaN) 층들을 포함하는, 발광 다이오드. - 제2항에 있어서,
상기 복수의 AlGaN 층들의 상기 Al 조성은 계단식으로 경사지는, 발광 다이오드. - 제2항에 있어서,
상기 복수의 AlGaN 층들의 상기 Al 조성은 연속적으로 감소하는 방식으로 경사지는, 발광 다이오드. - 제2항에 있어서,
상기 발광 다이오드 활성 영역으로부터 먼 쪽으로서 상기 도핑되지 않은 III족 나이트라이드층 위에 p-형 III족 나이트라이드층을 더 포함하는, 발광 다이오드. - 제5항에 있어서,
상기 p-형 III족 나이트라이드층의 Al 조성은 상기 복수의 AlGaN 층 중 하나의 Al 조성보다 적은, 발광 다이오드. - 제1항에 있어서,
상기 발광 다이오드 활성 영역과 도핑되지 않은 III족 나이트라이드 캡 층 사이에 갈륨 나이트라이드(GaN) 층을 더 포함하는, 발광 다이오드. - 제7항에 있어서,
상기 GaN 층은 도핑되지 않은 것인, 발광 다이오드. - 제1항에 있어서,
상기 도핑되지 않은 III족 나이트라이드층은 상기 발광 다이오드 활성 영역 바로 위에 있는, 발광 다이오드.
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US29437801P | 2001-05-30 | 2001-05-30 | |
US29444501P | 2001-05-30 | 2001-05-30 | |
US29430801P | 2001-05-30 | 2001-05-30 | |
US60/294,308 | 2001-05-30 | ||
US60/294,445 | 2001-05-30 | ||
US60/294,378 | 2001-05-30 | ||
US10/140,796 US6958497B2 (en) | 2001-05-30 | 2002-05-07 | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US10/140,796 | 2002-05-07 |
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KR1020097022150A Division KR101032847B1 (ko) | 2001-05-30 | 2002-05-23 | 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광 다이오드 구조 |
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KR20100114549A true KR20100114549A (ko) | 2010-10-25 |
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KR1020097022150A KR101032847B1 (ko) | 2001-05-30 | 2002-05-23 | 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광 다이오드 구조 |
KR1020037012710A KR100899133B1 (ko) | 2001-05-30 | 2002-05-23 | 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광다이오드 구조 |
KR1020087026427A KR20080098693A (ko) | 2001-05-30 | 2002-05-23 | 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광 다이오드 구조 |
KR1020107022242A KR101066760B1 (ko) | 2001-05-30 | 2002-05-23 | 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광 다이오드 구조 |
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KR1020037012710A KR100899133B1 (ko) | 2001-05-30 | 2002-05-23 | 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광다이오드 구조 |
KR1020087026427A KR20080098693A (ko) | 2001-05-30 | 2002-05-23 | 양자 우물과 초격자를 가진 ⅲ족 나이트라이드계 발광 다이오드 구조 |
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US (7) | US6958497B2 (ko) |
EP (4) | EP1390990B1 (ko) |
JP (5) | JP2005507155A (ko) |
KR (4) | KR101032847B1 (ko) |
CN (1) | CN100350637C (ko) |
AT (2) | ATE412253T1 (ko) |
AU (1) | AU2002257318A1 (ko) |
CA (1) | CA2441310A1 (ko) |
DE (2) | DE60231877D1 (ko) |
MY (1) | MY137396A (ko) |
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