TWI550902B - 發光二極體元件 - Google Patents
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- 239000010410 layer Substances 0.000 claims description 106
- 239000004065 semiconductor Substances 0.000 claims description 33
- 229910002601 GaN Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002086 nanomaterial Substances 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Description
本發明係有關於一種發光二極體元件，更特別的是一種將奈米結構層及超晶格結構層設置在以矽基板為主之發光二極體元件。
發光二極體(Light emitting diode,LED)在各種電子產品與工業上的應用日益普及，由於所需之能源成本係遠低於傳統之白熱燈或螢光燈，且單一的發光二極體之尺寸非常的輕巧，乃傳統光源所不及，因此在電子產品體積日益輕薄短小的趨勢之下，發光二極體的需求也與日俱增。
發光二極體是一種可以將電能直接轉換為光能之發光元件，由於不需經由將電能轉換成熱能的熱熾發光過程。因此也稱為冷發光元件。發光二極體除了具有高發光效率之外，也是一種微小之固態光源(solid state illuminator)，可製作成一半導體晶片形式，具有一半導體p-n接面結構。在此p-n接面之兩端施加電壓以通入電流之後，隨即產生電子與電洞往此p-n接面流動，並結合而釋放出光子。
就發光二極體的亮度方面而言，一般認為現階段的發光二極體，其技術上已經具備冷陰極燈管一半左右的效率，甚至其發光效能可以與冷陰極燈管並駕齊驅，發光二極體的光效率主要與兩者有關：一是與半導體晶片本身的發光效率，另一個係將半導體晶片封裝完成之後的光取出率。關於半導體晶片發光效率的主要發展方向為：電致發光材料的研發、以及提高半導體晶片結晶性的研究，以增加半導體晶片內部的量子效率。
根據習知技術之缺點，本發明的主要目的是揭露一種以矽基板為主之發光二極體元件，於發光二極體元件內設置超晶格結構層，由於超晶格結構層的厚度極薄，且根據其材料特性可以降有效釋放應力、降低發光二極體量子下降效應並且可以增加磊晶品質。
本發明的目的在於揭露一種以矽基板為主之發光二極體元件，而於發光二極體元件中之超晶格結構，主要係用於緩衝基板與所成長上去的第一半導體氮化鎵層所產生之應力，藉著調製兩種不同材料厚度，例如氮化鎵鋁/氮化鎵(AlGaN/GaN)，可減少相對應厚度的應力。
本發明另一目的係揭露一種以矽基板為主之發光二極體元件，於發光二極體元件內設置奈米結構層，其可以降低磊晶缺陷、提升磊晶品質、提升內部量子效率(IQE)、提升背向光散射效果，即提升發光層往矽基板方向的光的散射效果以提升其發光二極體的出光效率以及增加外部量子效率(EQE)。
根據以上所述之目的，本發明揭露一種發光二極體元件其包含：矽基板、緩衝層、超晶格結構層(super lattice structure layer)、奈米結構層(nano-structure layer)、第一半導體層、發光層及第二半導體層，其中緩衝層設置在矽基板上、超晶格結構層設置在緩衝層上、奈米結構層設置在超晶格結構層上、第一半導體層設置在奈米結構層上以及發光層設置在第一半導體層及第二半導體層之間，藉由超晶格結構層及奈米結構層可以有效的釋放發光二極體元件之應力以及降低磊晶缺陷，並且可以提高內部量子效率以及外部量子效率。
故而，關於本發明之優點與精神可以藉由以下發明詳述及附圖式解說來得到進一步的瞭解。
1‧‧‧發光二極體元件
10‧‧‧基板
12‧‧‧緩衝層
14‧‧‧超晶格結構層
16‧‧‧奈米結構層
18‧‧‧第一半導體層
20‧‧‧發光層
22‧‧‧第二半導體層
第1圖係根據本發明所揭露之技術，發光二極體元件之截面示意圖。
請參考第1圖。第1圖係為本發明所揭露之發光二極體元件之截面示意圖。在第1圖之發光二極體元件1中，其由下而上包括基板10、緩衝層12、超晶格結構層(super lattice structure layer)14、奈米結構層(nano-structure layer)16、第一半導體層18、發光層20以及第二半導體層22。
於本發明的實施例中，基板10係為矽基板，其取代傳統發光二極體利用藍寶石做為基板10。於本實施例中，使用矽基板的原因在於，係由於其材料便宜，且可往大尺吋晶圓例如12吋(12")製作，且其具有散熱性佳等優點，故本發明亦有利於與其他大尺寸矽基半導體製程設備進行整合等優點。
緩衝層12係設置在矽基板10上，其中緩衝層12係以磊晶成長的方式形成在矽基板10上，且緩衝層12的材料可以是氮化鎵鋁(AlNGa)。接著，超晶格結構層14設置在緩衝層12上，其中超晶格結構層14可以是由多層氮化鎵鋁/氮化鎵(AlGaN/GaN)對(pairs)所組成之結構。於一實施例中，超晶格結構層14可以是單層結構設置於緩衝層12上；而於另一實施例中，超晶格結構層14可以是多層結構設置於緩衝層12上。無論是單層結構或是多層結構之超晶格結構層14其設置在緩衝層12上之厚度薄，其單層厚度(AlGaN or GaN)約為1nm至10nm總厚度約100nm至1000nm，要說明的是其厚度還是要根據其多層結構的超晶格結構層14的形成對數而定，例如超晶格結構，一般係為兩奈米尺度介電材料之堆疊，如氮化鎵鋁/氮化鎵(AlGaN/GaN)厚度有1nm/1nm,2nm/2nm or 2nm/6nm，並沒有固定的形式，一般視成長環境而定，如成長溫度、成長之機台、以及應力控制的需求等等。藉由超晶格結構層14設置於發光二極體元件1，可以有效的釋放應力、降低發光二極體量子下降效應以及增加磊晶品質，因此藉由本發明所揭露具有超晶格結構層14之發光二極體元件1，可以增加發光二極體元件1之發光效率。
接著同樣參考第1圖。奈米結構層16係設置在超晶格結構層14上，其中奈米結構層16之材料為二氧化矽(SiO2)，氮化矽(SiNx)，空氣洞(air voids)或是複合式多層介電質材料，且設置於超晶格結構層14上之厚度
約10nm至2000nm。於本發明的實施例中，其奈米結構層16係可以連續結構或非連續結構設置在超晶格結構層14上，其優點在於可以降低磊晶缺陷、提升內部量子效率(IQE)、散射效果提升以及增加外部量子效率(EQE)。因此，藉由本發明所揭露具有奈米結構層16之發光二極體元件1，可以增加發光二極體元件1之發光效率。
接著，同樣參考第1圖。在本發明所揭露之發光二極體元件1中，其第一半導體層18設置在奈米結構層16上以及發光層20設置在第一半導體層18及第二半導體22之間，其中第一半導體層18係為n-型氮化鎵層(n-type GaN)，而第二半導體層22係為p-型氮化鎵層(p-type GaN)。而發光層20可以是單層量子井(single quantum well)或是多層量子井(multi-quantum well)。於本發明實施例中其第一半導體層18、發光層20以及第二半導體層22係以磊晶成長的方式依序形成在發光二極體元件1上。
根據本發明所揭露之發光二極體元件1，其優點在於使用矽基板其材料便宜，且可以朝大尺寸晶圓，例如12吋或更大尺寸的方向來製作，有利於與其他大尺寸矽基半導體設備進行整合，且其具有良好的散熱性，可以將發光二極體元件1在進行操作時所產生的熱釋放至外界環境中。另外，其可藉由超晶格結構層14主要是緩衝矽基板與在矽基板成長上去的氮化鎵所產生，並藉由調整兩種材料不同的厚度，例如，氮化鎵鋁/氮化鎵(AlGaN/GaN)的厚度，其可以減少其相對應厚度的應力，故可以降低發光二極體量子效率下降效應。另一個優點在於，藉由奈米結構層16可以降低磊晶缺陷以提升磊晶品質，並增加發光層往基板方向的光的散射，即增加背向光散射效率，而提升發光二極體元件1的出光效率，以及其可以藉由提升內部量子效率以及外部量子效率來提升發光二極體元件1的散射效率以提升發光二極體元件1之發光效率。
以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍內。
1‧‧‧發光二極體元件
10‧‧‧基板
12‧‧‧緩衝層
14‧‧‧超晶格結構層
16‧‧‧奈米結構層
18‧‧‧第一半導體層
20‧‧‧發光層
22‧‧‧第二半導體層
Claims (3)
- 一種具有矽基板與超晶格結構層之發光二極體元件，包含：一矽基板；一緩衝層，設置在該矽基板上，其中該緩衝層為氮化鎵鋁(AlGaN)；一超晶格結構層，設置在該緩衝層上，該超晶格結構層為氮化鎵/氮化鎵鋁(GaN/AlGaN)，該超晶格結構之厚度為100奈米(nm)至1000奈米；一奈米結構層，設置在該超晶格結構層上，該奈米結構層係由SiO2、SiC、空氣洞(air voids)以及複合式多層介電質材料群組中所選出，其中該奈米結構層厚度為10奈米至2000奈米；一第一半導體層，設置在該奈米結構層上其中該第一半導體層係為n-型氮化鎵層(n-type GaN)；一發光層，設置在該第一半導體層上，其中該發光層係單層量子井(single quantum well)；以及一第二半導體層，設置在該發光層上，其中該第二半導體層係為p-型氮化鎵層(p-type GaN)。
- 如申請專利範圍第1項所述之發光二極體結構，其中該超晶格結構層係單層結構。
- 如申請專利範圍第1項所述之發光二極體結構，其中該奈米結構層係非連續結構設置在該超晶格結構層上。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103112244A TWI550902B (zh) | 2014-04-02 | 2014-04-02 | 發光二極體元件 |
| CN201410394673.XA CN104979448B (zh) | 2014-04-02 | 2014-08-12 | 发光二极管组件 |
| US14/461,990 US9240518B2 (en) | 2014-04-02 | 2014-08-18 | Light emitting diode device having super lattice structure and a nano-structure layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103112244A TWI550902B (zh) | 2014-04-02 | 2014-04-02 | 發光二極體元件 |
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| Publication Number | Publication Date |
|---|---|
| TW201539780A TW201539780A (zh) | 2015-10-16 |
| TWI550902B true TWI550902B (zh) | 2016-09-21 |
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| US (1) | US9240518B2 (zh) |
| CN (1) | CN104979448B (zh) |
| TW (1) | TWI550902B (zh) |
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| CN111463326B (zh) * | 2020-03-12 | 2023-03-31 | 深圳市汇芯通信技术有限公司 | 半导体器件及其制备方法 |
| CN113571390A (zh) * | 2021-06-23 | 2021-10-29 | 电子科技大学 | 一种具有超晶格纳米线结构的GaN光电阴极 |
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| US20030209705A1 (en) * | 2001-06-15 | 2003-11-13 | Emerson David Todd | Ultraviolet light emitting diode |
| US20110284824A1 (en) * | 2008-11-21 | 2011-11-24 | Agency For Science, Technology And Research | Light emitting diode structure and a method of forming a light emitting diode structure |
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| JP2001177145A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Electronic Engineering Corp | 半導体発光素子およびその製造方法 |
| US6958497B2 (en) * | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
| US7692182B2 (en) * | 2001-05-30 | 2010-04-06 | Cree, Inc. | Group III nitride based quantum well light emitting device structures with an indium containing capping structure |
| JP4913375B2 (ja) * | 2005-08-08 | 2012-04-11 | 昭和電工株式会社 | 半導体素子の製造方法 |
| JP4462249B2 (ja) * | 2005-09-22 | 2010-05-12 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法 |
| GB2485418B (en) * | 2010-11-15 | 2014-10-01 | Dandan Zhu | Semiconductor materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030209705A1 (en) * | 2001-06-15 | 2003-11-13 | Emerson David Todd | Ultraviolet light emitting diode |
| US20110284824A1 (en) * | 2008-11-21 | 2011-11-24 | Agency For Science, Technology And Research | Light emitting diode structure and a method of forming a light emitting diode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104979448B (zh) | 2018-09-07 |
| TW201539780A (zh) | 2015-10-16 |
| US9240518B2 (en) | 2016-01-19 |
| CN104979448A (zh) | 2015-10-14 |
| US20150287879A1 (en) | 2015-10-08 |
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