KR101669476B1 - 논리 회로 및 반도체 장치 - Google Patents

논리 회로 및 반도체 장치 Download PDF

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Publication number
KR101669476B1
KR101669476B1 KR1020167014713A KR20167014713A KR101669476B1 KR 101669476 B1 KR101669476 B1 KR 101669476B1 KR 1020167014713 A KR1020167014713 A KR 1020167014713A KR 20167014713 A KR20167014713 A KR 20167014713A KR 101669476 B1 KR101669476 B1 KR 101669476B1
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South Korea
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layer
oxide semiconductor
insulating layer
transistor
semiconductor layer
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Korean (ko)
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KR20160075783A (ko
Inventor
유타카 시오노이리
히데토모 고바야시
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L27/088—
    • H01L29/7869—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037—Bistable circuits
    • H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Liquid Crystal (AREA)
KR1020167014713A 2009-10-30 2010-10-06 논리 회로 및 반도체 장치 Expired - Fee Related KR101669476B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009250415 2009-10-30
JPJP-P-2009-250415 2009-10-30
PCT/JP2010/067996 WO2011052383A1 (en) 2009-10-30 2010-10-06 Logic circuit and semiconductor device

Related Parent Applications (1)

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KR1020147010389A Division KR101629194B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치

Related Child Applications (1)

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KR1020167028889A Division KR101770981B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치

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KR20160075783A KR20160075783A (ko) 2016-06-29
KR101669476B1 true KR101669476B1 (ko) 2016-10-26

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KR1020167014713A Expired - Fee Related KR101669476B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치
KR1020147010389A Expired - Fee Related KR101629194B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치
KR1020127013415A Active KR101499494B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치
KR1020167028889A Expired - Fee Related KR101770981B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치

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KR1020147010389A Expired - Fee Related KR101629194B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치
KR1020127013415A Active KR101499494B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치
KR1020167028889A Expired - Fee Related KR101770981B1 (ko) 2009-10-30 2010-10-06 논리 회로 및 반도체 장치

Country Status (9)

Country Link
US (3) US8207756B2 (enExample)
EP (1) EP2494692B1 (enExample)
JP (10) JP5352561B2 (enExample)
KR (4) KR101669476B1 (enExample)
CN (2) CN102687400B (enExample)
MY (2) MY163862A (enExample)
SG (1) SG188112A1 (enExample)
TW (2) TWI538401B (enExample)
WO (1) WO2011052383A1 (enExample)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
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